Littelfuse推出高性能超级结X4-Class 200V功率MOSFET

Release time:2024-11-26
author:AMEYA360
source:Littelfuse
reading:793

  提供业界领先的低通态电阻,使电池储能和电源设备应用的电路设计更加简化,性能得到提升。

  Littelfuse隆重宣布推出IXTN400N20X4和IXTN500N20X4超级结X4-Class功率MOSFET。

20241126091548_203.png

  这些新器件在当前200V X4-Class超级结MOSFET的基础上进行扩展,有些具有最低导通电阻。这些MOSFET具有高电流额定值,设计人员能够用来替换多个并联的低额定电流器件,从而简化设计流程,提高应用的可靠性和功率密度。此外,SOT-227B封装的螺钉安装端子可确保安装坚固稳定。

  这些新的200V MOSFET提供最低的导通电阻,增强并补充了现有的Littelfuse X4-Class超级结系列产品组合。与当下最先进的X4-Class MOSFET解决方案相比,这些MOSFET的额定电流最高可提高约2倍,导通电阻值最高可降低约63%。

  新型MOSFET非常适合必须最大限度降低导通损耗的一系列低压功率应用,包括:

  电池储能系统(BESS)

  电池充电器

  电池成型

  DC/电池负载开关,以及

  电源

  “新器件将允许设计人员用一个器件解决方案取代多个并联的低额定电流器件。”Littelfuse全球产品营销工程师Sachin Shridhar Paradkar表示,“这种独特的解决方案简化了栅极驱动器设计,提高了可靠性,改善了功率密度和PCB空间利用率。”

  超级结X4级功率MOSFET具有以下主要性能优势:

  低传导损耗

  最少的并行连接工作量

  驱动器设计简化,驱动器损耗最小

  简化的热设计

  功率密度增加

  为什么对于看重极小导通损耗的应用来说具有低导通电阻的MOSFET是首选?

  对于看重极小导通损耗的应用来说,具有低导通电阻(RDS(on))的MOSFET(金属氧化物半导体场效应晶体管)是理想选择。这类器件能显著降低工作期间的功耗,从而降低传导损耗,提高效率,并减少发热。因此,它们非常适合电源、电机驱动器和电池供电设备等功率敏感型应用,在这些应用中,保持高效率和热管理至关重要。

  性能指标

20241126091604_146.png

  供货情况

  超级结X4-Class功率MOSFET以每管10支的形式供货。可通过Littelfuse全球各地的授权经销商索取样品。

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