英飞凌科技高侧和低侧驱动器设计用于控制MOSFET和IGBT,包括两个非互锁通道。该选择具有650V高、低侧绝缘体上硅 (SOI) 栅极驱动器IC,提供高侧 (2.5A) 和低侧电流 (0.7A) 选项。英飞凌高侧和低侧驱动器具有出色的坚固性和抗噪性,非常适合用于电机驱动器、家用电器、SMPS、电池供电应用和大功率照明。

特性
抗噪性
坚固耐用
应用
电机驱动器
家用电器
SMPS
电池供电应用
大功率照明
Previous:Murata Electronics 村田电子MRUS磁传感器
Online messageinquiry
| model | brand | Quote | 
|---|---|---|
| BD71847AMWV-E2 | ROHM Semiconductor | |
| MC33074DR2G | onsemi | |
| CDZVT2R20B | ROHM Semiconductor | |
| TL431ACLPR | Texas Instruments | |
| RB751G-40T2R | ROHM Semiconductor | 
| model | brand | To snap up | 
|---|---|---|
| ESR03EZPJ151 | ROHM Semiconductor | |
| IPZ40N04S5L4R8ATMA1 | Infineon Technologies | |
| BU33JA2MNVX-CTL | ROHM Semiconductor | |
| BP3621 | ROHM Semiconductor | |
| TPS63050YFFR | Texas Instruments | |
| STM32F429IGT6 | STMicroelectronics | 
Qr code of ameya360 official account
Identify TWO-DIMENSIONAL code, you can pay attention to
                                    
                                Please enter the verification code in the image below: