ROHM Develops New High Power Density SiC Power Modules Compact high heat dissipation design sets a new standard for OBCs

Release time:2025-04-24
author:AMEYA360
source:ROHM
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  ROHM has developed the new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters in onboard chargers (OBC) for xEVs (electric vehicles). The lineup includes six models rated at 750V (BSTxxx1P4K01) and seven products rated at 1200V (BSTxxx2P4K01). All basic circuits required for power conversion in various high-power applications are integrated into a compact module package, reducing the design workload for manufacturers and enabling the miniaturization of power conversion circuits in OBCs and other applications.

ROHM Develops New High Power Density SiC Power Modules Compact high heat dissipation design sets a new standard for OBCs

  In recent years, the rapid electrification of cars is driving efforts to achieve a decarbonized society. Electric vehicles are seeing higher battery voltages to extend the cruising range and improve charging speed, creating a demand for higher output from OBCs and DC-DC converters. At the same time, there is an increasing need in the market for greater miniaturization and lighter weight for these applications, requiring technological breakthroughs to improve power density - a key factor - while enhancing heat dissipation characteristics that could otherwise hinder progress. ROHM’s HSDIP20 package addresses these technical challenges that were previously becoming difficult to overcome with discrete configurations, contributing to both higher output and the downsizing of electric powertrains.

ROHM Develops New High Power Density SiC Power Modules Compact high heat dissipation design sets a new standard for OBCs

  The HSDIP20 features an insulating substrate with excellent heat dissipation properties that suppresses the chip temperature rise even during high power operation. When comparing a typical OBC PFC circuit utilizing six discrete SiC MOSFETs with top-side heat dissipation to ROHM’s 6-in-1 module under the same conditions, the HSDIP20 package was verified to be approx. 38°C cooler (at 25W operation). This high heat dissipation performance supports high currents even in a compact package, achieving industry-leading power density more than three times higher than top-side cooled discretes and over 1.4 times that of similar DIP type modules. As a result, in the PFC circuit mentioned above, the HSDIP20 can reduce mounting area by approx. 52% compared to top-side cooled discrete configurations, greatly contributing to the miniaturization of power conversion circuits in applications such as OBCs.

  Going forward, ROHM will continue to advance the development of SiC modules that balance miniaturization with high efficiency while also focusing on the development of automotive SiC IPMs that provide higher reliability in a smaller form factor.

  Product Lineup

ROHM Develops New High Power Density SiC Power Modules Compact high heat dissipation design sets a new standard for OBCs

  *1: Tc=25°C VGS=18V *2: Combines chips with different ON resistances

  *3: Q1, Q4 pins *4: Q2, Q3, Q5, Q6 pins

  Application Examples

  Power conversion circuits like PFC and LLC converters are commonly used in the primary side circuits of industrial equipment, allowing the HSDIP20 to also contribute to the miniaturization of applications in both the industrial and consumer electronics fields.

  ◇ Automotive systems

  Onboard chargers, electric compressors and more.

  ◇ Industrial equipment

  EV charging stations, V2X systems, AC servos, server power supplies, PV inverters, power conditioners, etc.

  Sales Information

  Pricing: $100/unit (samples, excluding tax)

  Availability: OEM quantities (April 2025)

  Supporting Information

  ROHM is committed to providing application-level support, including the use of in-house motor testing equipment. A variety of supporting materials are also offered such as simulations and thermal designs that enable quick evaluation and adoption of HSDIP20 products. Two evaluation kits are available as well, one for double-pulse testing and the other for 3-phase full bridge applications, enabling evaluation under close to actual circuit conditions.

  For more information, please contact AMEYA360 or visit the contact page on ROHM’s website.

ROHM Develops New High Power Density SiC Power Modules Compact high heat dissipation design sets a new standard for OBCs

  EcoSiC™ Brand

  EcoSiC™ is a brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.

ROHM Develops New High Power Density SiC Power Modules Compact high heat dissipation design sets a new standard for OBCs

  ・EcoSIC™ is a trademark or registered trademark of ROHM Co., Ltd.

  Terminology

  Power Factor Correction (PFC)

  A circuit that enhances the power factor by shaping the waveform of input power in the power supply circuit. By using a PFC circuit, the input power is made closer to a sine wave (power factor = 1), improving power conversion efficiency. While PFC circuits typically rely on diode rectification, OBCs often employ active bridge rectification using MOSFETs or bridgeless PFC. This approach is favored because MOSFETs offer lower switching losses, and especially in high power PFCs, using SiC MOSFETs reduces heat generation and power losses.

ROHM Develops New High Power Density SiC Power Modules Compact high heat dissipation design sets a new standard for OBCs

  LLC Converter

  A type of resonant DC-DC converter known for its high efficiency with low noise power conversion. The name LLC comes from its basic configuration, which combines two inductors (L) and a capacitor (C) in the circuit. By forming a resonant circuit, switching losses are significantly reduced, making it ideal for applications requiring high efficiency, such as OBCs, power supplies for industrial equipment, and server power supplies.


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ROHM at PCIM Europe 2025: Powerful Highlights for E-Mobility and Industrial Applications
  From May 6th to 8th ROHM will exhibit at the PCIM Expo & Conference, the leading international event for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, taking place in Nuremberg. On its booth 304 in hall 9, ROHM will showcase reference projects with renowned partners and present the evolution of its package designs and evaluation boards.  "PCIM 2025 in Nuremberg is the meeting place for innovation and progress in power electronics. This is where the brightest minds in the industry come together to shape the future of e-mobility and industrial applications. We will be presenting great customer applications to showcase the possibilities offered by our products in the best possible way. Whether in the PV industry or e-mobility sectors – we are involved and would like to talk to our customers on site about the key projects of the future," says Wolfram Harnack, President at ROHM Semiconductor Europe.  Highlights of ROHM’s presence at PCIM 2025 include:  For automotive applications, ROHM will exhibit an inverter unit utilizing the TRCDRIVE pack™ that consists of a 2-in-1 SiC Molded Module. Valeo and ROHM have been collaborating since 2022, initially focusing on technical exchange to enhance the performance and efficiency of motor inverters, a key component in the propulsion systems of electric vehicles (EVs) and plug-in hybrids (PHEVs).  Power solutions for on-board chargers (OBCs), essential for e-mobility applications, will also be on the booth. ROHM will showcase the new EcoSiC™ molded power modules suitable for OBCs, along with OBC applications adopting ROHM’s power semiconductor devices.  ROHM’s Power Eco Family products: ROHM has grouped the four product lines of power semiconductors under the brand concept “Power Eco Family” and is contributing to the development of a sustainable ecosystem through improved application performance. We will show featured solutions and case studies at the booth.  In this context, one application example is the new GaN Lineup: ROHM’s EcoGaN™ series of 650V GaN HEMTs in the TOLL package has been adopted for AI server power supplies by Murata Power Solutions, a subsidiary of the Murata Manufacturing Group and a leading supplier of electronic components, batteries and power supplies in Japan. Integrating ROHM’s GaN HEMTs, which combine low loss operation with high-speed switching performance, in Murata Power Solutions’ 5.5kW AI server power supply unit achieves greater efficiency and miniaturization.  For more information, please refer to AMEYA360’s related news release.  The details of the Power Eco Family are as follows.  ● EcoSiC™ is a brand of devices leveraging silicon carbide which is attracting attention in the power device field for performance that surpasses silicon.  ● EcoGaN™ comprises compact, energy-efficient devices that utilize the low ON resistance, high-speed switching characteristics of GaN to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.  ● EcoIGBT™ is ROHM’s brand of IGBTs consisting of both devices and modules designed to meet the needs of high-voltage applications in the power device field.  ● EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector.  During the fair, ROHM’s power experts will participate in several panel discussions and conference presentations. Additionally, they will hold poster sessions at the PCIM Europe 2025 conference.  More information regarding ROHM’s key highlights at PCIM 2025 is available here: www.rohm.com/pcim  *EcoSiC™, EcoGaN™, EcoIGBT™, EcoMOS™ and TRCDRIVE pack™ are trademarks or registered trademarks of ROHM Co., Ltd.
2025-04-23 17:01 reading:181
ROHM Develops Class-Leading* Low ON-Resistance, High-Power MOSFETs for High-Performance Enterprise and AI Servers
  ROHM has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise and AI servers.  The advancement of high-level data processing technologies and the acceleration of digital transformation have increased the demand for data center servers. At the same time, the number of servers equipped with advanced computing capabilities for AI processing is on the rise and is expected to continue to grow. These servers operate 24 hours a day, 7 days a week – ensuring continuous operation. As a result, conduction losses caused by the ON-resistance of multiple MOSFETs in the power block have a significant impact on system performance and energy efficiency. This becomes particularly evident in AC-DC conversion circuits, where conduction losses make up a substantial portion of total power loss – driving the need for low ON-resistance MOSFETs.  Additionally, servers equipped with a standard hot-swap function, which allow for the replacement and maintenance of internal boards and storage devices while powered ON, experience a high inrush current during component exchanges. Therefore, to protect server components and MOSFETs from damage, a wide Safe Operating Area (SOA) tolerance is essential.  To address these challenges, ROHM has developed its new DFN5060-8S package that supports the packaging of a larger die compared to conventional designs, resulting in a lineup of power MOSFETs that achieve industry-leading* low ON-resistance along with wide SOA capability. These new products significantly contribute to improving efficiency and enhancing reliability in server power circuits.  The new lineup includes three products. The RS7E200BG (30V) is optimized for both secondary-side AC-DC conversion circuits and hot-swap controller (HSC) circuits in 12V power supplies used in high-performance enterprise servers. The RS7N200BH (80V) and RS7N160BH (80V) are ideal for secondary AC-DC conversion circuits in 48V AI server power supplies.  All three models feature the newly developed DFN5060-8S package (5.0mm × 6.0mm). The package increases the internal die size area by approximately 65% compared to the conventional HSOP8 package (5.0mm × 6.0mm). As a result, the RS7E200BG (30V) and RS7N200BH (80V) achieve ON-resistances of 0.53mΩ and 1.7mΩ (at VGS = 10V), respectively – both of which rank among the best in the industry in the 5.0mm × 6.0mm class, significantly contributing to higher efficiency in server power circuits.  Moreover, ROHM has optimized the internal clip design to enhance heat dissipation, further improving SOA tolerance, which contributes to ensuring application reliability. Notably, the RS7E200BG (30V) achieves an SOA tolerance of over 70A at a pulse width of 1ms and VDS = 12V, which is twice that of the conventional HSOP8 package MOSFETs under the same conditions, ensuring industry-leading SOA performance in a 5.0mm × 6.0mm footprint.  Going forward, ROHM plans to gradually begin mass production of power MOSFETs compatible with hot-swap controller circuits for AI servers in 2025, continuing to expand its lineup that contributes to greater efficiency and reliability across a wide range of applications.  Product Lineup  EcoMOS™ Brand  EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector.  Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.  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N-channel MOSFETs are the mainstream choice, as they become conductive when a positive voltage is applied to the gate relative to the source, offering lower ON-resistance and higher efficiency than P-channel variants. Due to their low loss and high-speed switching capabilities, power MOSFETs are widely used in power circuits, motor drive circuits, and inverters.  Hot-Swap Controller (HSC)  A specialized integrated circuit (IC) that enables hot-swap functionality, allowing components to be inserted or removed while the power supply system remains active. It plays a crucial role in managing inrush current that occurs during component insertion, protecting both the system and connected components from damage.  Inrush Current  A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered ON. Proper control of this current reduces stress on power circuit components, helping to prevent device failure and stabilize the system.
2025-04-10 13:10 reading:253
ROHM and TSMC Launch Strategic Gallium Nitride Technology Collaboration for Automotive Industry
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2025-04-02 15:36 reading:309
Mazda and ROHM Begin Joint Development of Automotive Components Using Next-Generation Semiconductors
  Mazda Motor Corporation (hereinafter “Mazda”) and ROHM Co., Ltd. (hereinafter “ROHM”) have commenced joint development of automotive components using gallium nitride (GaN) power semiconductors, which are expected to be the next-generation semiconductors.  (Left) Ichiro Hirose, Director, Senior Managing Executive Officer and CTO of MAZDA / (Right) Katsumi Azuma, Member of the Board and Senior Managing Executive Officer of ROHM  Since 2022, Mazda and ROHM have been advancing the joint development of inverters using silicon carbide (SiC) power semiconductors under a collaborative framework for the development and production of electric drive units. Now, they have also embarked on the development of automotive components using GaN power semiconductors, aiming to create innovative automotive components for next-generation electric vehicles.  GaN is attracting attention as a next-generation material for power semiconductors. Compared to conventional silicon (Si) power semiconductors, GaN can reduce power conversion losses and contribute to the miniaturization of components through high-frequency operation.  Both companies will collaborate to transform these strengths into a package that considers the entire vehicle, and into solutions that innovate in weight reduction and design. Mazda and ROHM aim to materialize the concept and unveil a demonstration model within FY2025, with practical implementation targeted for FY2027.  “As the shift towards electrification accelerates in pursuit of carbon neutrality, we are delighted to collaborate with ROHM, which aims to create a sustainable mobility society with its outstanding semiconductor technology and advanced system solution capabilities, in the development and production of automotive components for electric vehicles” said Ichiro Hirose, Director, Senior Managing Executive Officer and CTO of Mazda. “We are excited to work together to create a new value chain that directly connects semiconductor devices and cars. Through collaboration with partners who share our vision, Mazda will continue to deliver products filled with the 'joy of driving' that allows customers to truly enjoy driving, even in electric vehicles.”  “We are very pleased to collaborate with Mazda, which pursues the 'joy of driving,' in the development of automotive components for electric vehicles” said Katsumi Azuma, Member of the board and Senior Managing Executive Officer of ROHM. “ROHM's EcoGaN™, capable of high-frequency operation, and the control IC that maximizes its performance are key to miniaturization and energy-saving. To implement this in society, collaboration with a wide range of companies is essential, and we have established various partnerships for the development and mass production of GaN. By collaborating with Mazda, which aims to create 'cars that coexist sustainably with the earth and society,' we will understand the requirements for GaN from the perspective of application and final product development, contributing to the spread of GaN power semiconductors and the creation of a sustainable mobility society.”  EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.
2025-03-31 15:46 reading:251
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