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  • ROHM Publishes White Paper on Power Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale AI Infrastructure

ROHM Publishes White Paper on Power Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale AI Infrastructure

Release time：2025-10-15
author：AMEYA360
source：ROHM
reading：484

　　ROHM has released a new white paper detailing advanced power solutions for AI data centers based on the novel 800 VDC architecture, reinforcing its role as a key semiconductor industry player in driving system innovation.

　　As part of the collaboration announced in June 2025, the white paper outlines optimal power strategies that support large-scale 800 VDC power distribution across AI infrastructure.

　　The 800 VDC architecture represents a highly efficient, scalable power delivery system poised to transform data center design by enabling gigawatt-scale AI factories. ROHM offers a broad portfolio of power devices, including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), and is among the few companies globally with the technological expertise to develop analog ICs (control and power ICs) capable of maximizing device performance.

　　Included in the white paper are ROHM’s comprehensive power solutions spanning a wide range of power devices and analog IC technologies, supported by thermal design simulations, board-level design strategies, and real-world implementation examples.

　　[Access the white paper here]

　　Key Highlights of the White Paper• Rising Rack Power Consumption: Power demand per rack in AI data centers is rapidly increasing, pushing conventional 48V/12V DC power supply systems to their limits.

　　• Shift to 800 VDC: Transitioning to an 800 VDC architecture significantly enhances data center efficiency, power density, and sustainability.

　　• Redefined Power Conversion: In the 800 VDC system, AC-DC conversion (PSU), traditionally performed within server racks, is relocated to a dedicated power rack.

　　• Essential Role of SiC and GaN: Wide bandgap devices are critical for achieving efficient performance. With AC-DC conversion moved outside the IT rack, higher-density configurations inside the IT rack can better support GPU integration.

　　• Optimized Conversion Topologies: Each conversion stage—from AC to 800 VDC in the power rack and from 800 VDC to lower voltages in the IT rack—requires specialized solutions. ROHM’s SiC and GaN devices contribute to higher efficiency and reduced noise while decreasing the size of peripheral components, significantly increasing power density.

　　• Breakthrough Device Technologies: ROHM’s EcoSiC™ series offers industry-leading low on-resistance and top-side cooling modules ideal for AI servers, while the EcoGaN™ series combines GaN performance with proprietary analog IC technologies, including Nano Pulse Control™.　This allows for stable gate drive, ultra-fast control, and high-frequency operation–features that have earned strong market recognition.

　　The shift to 800 VDC infrastructure is a collective industry effort. ROHM is working closely with NVIDIA, data center operators, and power system designers to deliver essential wide bandgap semiconductor technologies for next-generation AI infrastructure. Through strategic collaborations, including a 2022 partnership with Delta Electronics, ROHM continues to drive innovation in SiC and GaN power devices, enabling powerful, sustainable, and energy-efficient data center solutions.

　　ROHM’s EcoSiC™

ROHM Publishes White Paper on Power Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale AI Infrastructure

　　EcoSiC™ is ROHM’s brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.

　　・EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.


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ROHM Develops Breakthrough Schottky Barrier Diode Combining Low VF and IR for Advanced Image Sensor Protection
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ROHM Develops Breakthrough Schottky Barrier Diode Combining Low VF and IR for Advanced Image Sensor Protection

　　ROHM has developed an innovative Schottky barrier diode that overcomes the traditional VF / IR trade-off. This way, it delivers high reliability protection for a wide range of high-resolution image sensor applications, including ADAS cameras.　　Modern ADAS cameras and similar systems require higher pixel counts to meet the demand for greater precision. This has created a growing concern – the risk of damage caused by photovoltaic voltage generated under light exposure during power OFF. While low-VF SBDs are effective countermeasures, low IR is also essential during operation to prevent thermal runaway. However, simultaneously achieving both low VF and IR has been a longstanding technical challenge. ROHM has overcome this hurdle by fundamentally redesigning the device structure – successfully developing an SBD that combines low VF with low IR which is ideal for protection applications.　　The RBE01VYM6AFH represents a novel concept: leveraging the low-VF characteristics of rectification SBDs for protection purposes. By adopting a proprietary architecture, ROHM has achieved low IR that is typically difficult to realize with low VF designs. As a result, even under harsh environmental conditions, the device meets market requirements by delivering VF of less than 300mV (at IF=7.5mA even at Ta=-40°C), and an IR of less than 20mA (at VR=3V even at Ta=125°C.) These exceptional characteristics not only prevent circuit damage caused by high photovoltaic voltage generated when powered OFF, but also significantly reduce the risk of thermal runaway and malfunction during operation.　　The diode is housed in a compact flat-lead SOD-323HE package (2.5mm × 1.4mm / 0.098inch × 0.055inch) that offers both space efficiency and excellent mountability. This enables support for space-constrained applications such as automotive cameras, industrial equipment, and security systems. The RBE01VYM6AFH is also AEC-Q101 qualified, ensuring suitability as a protection device for next-generation automotive electronics requiring high reliability and long-term stability.　　Going forward, ROHM will focus on expanding its lineup with even smaller packages to address continuing miniaturization demands.　　Key Specifications　　Application Examples　　Image sensor-equipped sets such as ADAS cameras, smart intercoms, security cameras, and home IoT devices.　　Terminology　　Photovoltaic Voltage　　A term commonly used with optical sensors, referring to the voltage produced when exposed to light. In general, the stronger the light intensity or higher the pixel count the greater voltage generated.
2025-10-27 16:49 reading：315
ROHM has Developed New Smart Switches Optimized for Zonal Controllers
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ROHM has Developed New Smart Switches Optimized for Zonal Controllers

　　ROHM has developed six new high-side Smart Switches (Intelligent Power Devices, short: IPDs) BV1HBxxxEFJ series (BV1HB008EFJ-C, BV1HB012EFJ-C, BV1HB020EFJ-C, BV1HB040EFJ-C, BV1HB090EFJ-C, BV1HB180EFJ-C) with highly accurate current sensing capability and ON resistances from 9 mΩ to 180 mΩ. They are ideal for protecting loads and subsystems from abnormalities such as overcurrent, overvoltage, and overtemperature, ensuring reliable operation and safeguarding sensitive components in automotive lighting, body control such as, door locks and power windows. Extensive diagnostic capabilities, e.g., open load and reverse battery detection, further enhances safety and reliability.　　Vehicle electronic control systems are becoming increasingly sophisticated with the advancement of autonomous driving and electric vehicles (EVs). This evolution has heightened the importance of electronic protection from a functional safety standpoint, driving the shift toward Zonal Controllers architecture that manages vehicle functions in designated zones. As a result, the use of smart switches for electronic load protection and control is rapidly growing.　　Zonal controllers must each manage a large number of loads, but conventional smart switches often lack the drive capability required for high-capacitance loads. ROHM’s new smart switches address this challenge, delivering key performance attributes such as low ON resistance and high inductive energy clamp while significantly improving capacitive load drive capability. By commercializing high-performance smart switches tailored to zonal controllers’ requirements, ROHM is contributing to automotive electrification and the elimination of mechanical fuses.　　The new products feature exceptional high-capacitance load driving capability, maximizing performance at the critical interface between Zonal Controllers and output loads (including various ECUs). Leveraging proprietary cutting-edge process technology makes it possible to achieve both low ON resistance and high inductive energy clamp – two characteristics typically involve a trade-off. The result is a well-balanced integration of three key performance metrics: drive capability, ON resistance, and energy tolerance. This enhances system design safety, efficiency, and reliability. The devices also incorporate a best-in-class* high-precision current sensing function (±5%) that provides effective protection for harnesses connected to output loads. At the same time, the compact, high heat dissipation HTSOP-J8 package ensures excellent design versatility.　　Going forward, ROHM remains committed to improving safety, security, and energy efficiency in the automotive field by continuing to develop high reliability, high performance devices.　　*ROHM study on high-side Smart Switches - September 30th, 2025　　Application Examples　　Body applications, powertrain/inverter systems, other switch-related circuits　　Terminology　　Zonal Controllers　　An emerging design concept in automotive electronic architecture, zonal controllers represent a shift away from the conventional approach of assigning dedicated ECUs for each function, such as lighting, door locks, and power windows. Instead, the vehicle is divided into zones, with a zonal controller manages multiple functions in its zone.　　Intelligent Power Devices (IPD) / Smart Switches　　Smart power switches are semiconductor devices that electronically control the delivery of power by turning it on and off, while also providing integrated protection and diagnostic features such as overcurrent, overvoltage, thermal shutdown, current sensing, and open load detection to enhance system reliability and safety.　　Capacitive Load Driving Capability　　A technical term referring to the ability of an electronic circuit or semiconductor device to operate reliably when driving capacitive loads. It is especially important in circuit configurations involving zone ECUs and their output stages (including individual ECUs) where large electrolytic capacitors are commonly used. If this capability is inefficient, inrush current cannot be adequately suppressed, leading to overheating that can result in malfunctions or reduced operational lifespan.
2025-09-30 16:29 reading：419
ROHM and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers
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ROHM and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers

　　ROHM and Infineon Technologies AG have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems, and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both ROHM and Infineon. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.　　"We are excited about working with ROHM to further accelerate the establishment of SiC power devices," said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. "Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization."　　"ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon constitutes a significant step towards the realization of this goal, since it broadens the portfolio of solutions," said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, in charge of Power Devices Business at ROHM. "By working together, we can drive innovation, reduce complexity, and increase customer satisfaction, ultimately shaping the future of the power electronics industry."Dr. Peter Wawer, Division President Green Industrial Power at Infineon (left)and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM　　As part of the agreement, ROHM will adopt Infineon’s innovative top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon's top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.　　At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM's advanced DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247.　　ROHM and Infineon plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This will further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.　　Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using ROHM’s and Infineon’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.　　About ROHM　　ROHM, a leading semiconductor and electronic component manufacturer, was established in 1958. From the automotive and industrial equipment markets to the consumer and communication sectors, ROHM supplies ICs, discretes, and electronic components featuring superior quality and reliability through a global sales and development network. Our strengths in the analog and power markets allow us to propose optimized solutions for entire systems that combine peripheral components (i.e., transistors, diodes, resistors) with the latest SiC power devices as well as drive ICs that maximize their performance.　　Further information is available at https://www.rohm.com　　About Infineon　　Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company has around 58,060 employees worldwide and generated revenue of about €15 billion in the 2024 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).
2025-09-29 14:53 reading：488
ROHM Launches 2-in-1 SiC Molded Module “DOT-247”
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ROHM Launches 2-in-1 SiC Molded Module “DOT-247”

　　ROHM has developed the "DOT-247," a 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx), ideal for industrial applications such as PV inverters, UPS systems, and semiconductor relays. The module retains the versatility of the widely adopted "TO-247" package while achieving high design flexibility and power density.　　The DOT-247 features a combined structure consisting of two TO-247 packages. This design enables the use of large chips, which were structurally difficult to accommodate in the TO-247 package, and achieves low on-resistance through an unique internal structure. Additionally, through optimized package structure, thermal resistance has been reduced by approximately 15% and inductance by approximately 50% compared to the TO-247. This enables a power density 2.3 times higher than the TO-247 in a half-bridge configuration –achieving the same power conversion circuit in approximately half the volume.　　The new products featuring the DOT-247 package are available in two topologies: half-bridge and common-source. Currently, two-level inverters are the mainstream in PV inverters, but there is growing demand for multi-level circuits such as three-level NPC, three-level T-NPC, and five-level ANPC to meet the need for higher voltages. In the switching sections of these circuits, topologies such as half-bridge and common-source are mixed –making custom products necessary in many cases when using conventional SiC modules.　　To address this challenge, ROHM has developed each of these two topologies—the smallest building blocks of multi-level circuits—into a 2-in-1 module. This enables flexibility to support various configurations such as NPC circuits and DC-DC converters, while significantly reducing the number of components and mounting area, and achieving circuit miniaturization compared to discrete components.　　Evaluation boards will also be made available progressively to facilitate evaluation during application design. For more information, please contact a sales representative or visit the contact page on ROHM’s website.　　Product Lineup　　☆:Under Development　　AEC-Q101 is an automotive electronics reliability standard established by the Automotive Electronics Council (AEC).　　The Q101 standard is specifically focused on discrete semiconductor components.　　Application Examples　　PV inverters, semiconductor relays, UPS (uninterruptible power supply), ePTO, and boost converters for FCVs (fuel cell vehicles).　　AI servers (eFuse), EV charging stations, etc.　　Sales Information　　Pricing: $140/unit (samples, excluding tax)　　Availability: ROHM construct mass production (September 2025)　　Products compliant with the automotive reliability standard AEC-Q101 are scheduled to begin sample shipments in October 2025.　　Comprehensive Support　　ROHM is committed to providing application-level support, including the use of in-house motor testing equipment. A variety of supporting materials are also offered, such as simulations and thermal designs that enable quick evaluation and adoption of DOT-247 products. An evaluation kit for double-pulse testing is already available, allowing immediate testing, while an evaluation kit for 3-phase inverters is currently under preparation, with reference designs scheduled to be released from November 2025.　　• About the DOT-247 design models　　SPICE models: Available on the product web pages for each part number　　LTspice® models: Scheduled to be available for three-level NPC from October 2025 on the web pagesLTspice® is a registered trademark of Analog Devices, Inc.When using third-party trademarks, please adhere to the usage guidelines specified by the rights holder.　　For details, please contact a sales representative or visit the contact page on ROHM’s website.　　EcoSiC™ Brand　　EcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.• EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　Half-bridge/ Common-source　　A basic configuration of a power conversion circuit consisting of two MOSFETs. In a half-bridge configuration, the MOSFETs are connected in series, one above the other, and the output is taken from the connection point. By switching the upper and lower MOSFETs alternately, the output voltage can be switched between positive and negative, making this configuration widely used as the basic structure for high-efficiency power conversion in inverters and motor drive circuits.　　Common Source is a configuration where the source terminals of the two MOSFETs are connected, and the output is taken from each drain. By grouping the source terminals, the gate drive circuit can be simplified, making it suitable for applications such as multilevel inverters.　　Types of NPC-type multi-level circuits　　NPC (Neutral Point Clamped) is a multi-level circuit configuration that divides the output voltage into three levels (+, 0, and -) to reduce voltage stress on the switching devices. The "0V" state is created by the neutral point, which is the contact point located between the positive and negative voltages.　　T-NPC (T-type NPC) replaces the diode used to stabilize the neutral point with switching devices such as MOSFETs, enabling more efficient operation. ANPC (Active NPC) actively controls the potential of the neutral point itself using a switch, achieving smoother output waveforms and high-precision power conversion. T-NPC and ANPC are suitable for applications requiring higher output and efficiency.　　ePTO (electric Power Take-Off)　　A system that uses the power from an electric vehicle's motor or battery to drive external work machinery or equipment (such as hydraulic pumps or compressors). This is an electrified version of the PTO (Power Take-Off) used in conventional engine vehicles, and its adoption is advancing in environmentally friendly commercial vehicles and work vehicles.
2025-09-17 13:11 reading：540
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