ROHM Develops Class-Leading* Low ON-Resistance, High-Power <span style='color:red'>MOS</span>FETs for High-Performance Enterprise and AI Servers
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ROHM Develops Class-Leading* Low ON-Resistance, High-Power MOSFETs for High-Performance Enterprise and AI Servers

　　ROHM has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise and AI servers.　　The advancement of high-level data processing technologies and the acceleration of digital transformation have increased the demand for data center servers. At the same time, the number of servers equipped with advanced computing capabilities for AI processing is on the rise and is expected to continue to grow. These servers operate 24 hours a day, 7 days a week – ensuring continuous operation. As a result, conduction losses caused by the ON-resistance of multiple MOSFETs in the power block have a significant impact on system performance and energy efficiency. This becomes particularly evident in AC-DC conversion circuits, where conduction losses make up a substantial portion of total power loss – driving the need for low ON-resistance MOSFETs.　　Additionally, servers equipped with a standard hot-swap function, which allow for the replacement and maintenance of internal boards and storage devices while powered ON, experience a high inrush current during component exchanges. Therefore, to protect server components and MOSFETs from damage, a wide Safe Operating Area (SOA) tolerance is essential.　　To address these challenges, ROHM has developed its new DFN5060-8S package that supports the packaging of a larger die compared to conventional designs, resulting in a lineup of power MOSFETs that achieve industry-leading* low ON-resistance along with wide SOA capability. These new products significantly contribute to improving efficiency and enhancing reliability in server power circuits.　　The new lineup includes three products. The RS7E200BG (30V) is optimized for both secondary-side AC-DC conversion circuits and hot-swap controller (HSC) circuits in 12V power supplies used in high-performance enterprise servers. The RS7N200BH (80V) and RS7N160BH (80V) are ideal for secondary AC-DC conversion circuits in 48V AI server power supplies.　　All three models feature the newly developed DFN5060-8S package (5.0mm × 6.0mm). The package increases the internal die size area by approximately 65% compared to the conventional HSOP8 package (5.0mm × 6.0mm). As a result, the RS7E200BG (30V) and RS7N200BH (80V) achieve ON-resistances of 0.53mΩ and 1.7mΩ (at VGS = 10V), respectively – both of which rank among the best in the industry in the 5.0mm × 6.0mm class, significantly contributing to higher efficiency in server power circuits.　　Moreover, ROHM has optimized the internal clip design to enhance heat dissipation, further improving SOA tolerance, which contributes to ensuring application reliability. Notably, the RS7E200BG (30V) achieves an SOA tolerance of over 70A at a pulse width of 1ms and VDS = 12V, which is twice that of the conventional HSOP8 package MOSFETs under the same conditions, ensuring industry-leading SOA performance in a 5.0mm × 6.0mm footprint.　　Going forward, ROHM plans to gradually begin mass production of power MOSFETs compatible with hot-swap controller circuits for AI servers in 2025, continuing to expand its lineup that contributes to greater efficiency and reliability across a wide range of applications.　　Product Lineup　　EcoMOS™ Brand　　EcoMOS™ is ROHM's brand of silicon power MOSFETs designed for energy-efficient applications in the power device sector.　　Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.　　EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Application Examples　　・AC-DC conversion and HSC circuits for 12V high-performance enterprise server power supplies　　・AC-DC conversion circuits for 48V AI server power supplies　　・48V industrial equipment power supplies (i.e. fan motors)　　Terminology　　Low ON-Resistance (RDS(on))　　The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) results in lower power loss during operation.　　SOA (Safe Operating Area) Tolerance　　The range of voltage and current within which a device can operate safely without damage. Exceeding this range can lead to thermal runaway or device failure, making SOA tolerance a critical factor, especially in applications prone to inrush current or overcurrent.　　Power MOSFET　　A type of MOSFET used for power conversion and switching applications. N-channel MOSFETs are the mainstream choice, as they become conductive when a positive voltage is applied to the gate relative to the source, offering lower ON-resistance and higher efficiency than P-channel variants. Due to their low loss and high-speed switching capabilities, power MOSFETs are widely used in power circuits, motor drive circuits, and inverters.　　Hot-Swap Controller (HSC)　　A specialized integrated circuit (IC) that enables hot-swap functionality, allowing components to be inserted or removed while the power supply system remains active. It plays a crucial role in managing inrush current that occurs during component insertion, protecting both the system and connected components from damage.　　Inrush Current　　A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered ON. Proper control of this current reduces stress on power circuit components, helping to prevent device failure and stabilize the system.
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Release time：2025-04-10 13:10 reading：254 Continue reading>>
ROHM’s New N-channel <span style='color:red'>MOS</span>FETs Offer High Mounting Reliability in Automotive Applications
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ROHM’s New N-channel MOSFETs Offer High Mounting Reliability in Automotive Applications

　　ROHM has released N-channel MOSFETs - RF9x120BKFRA / RQ3xxx0BxFRA / RD3x0xxBKHRB - featuring low ON-resistance ideal for a variety of automotive applications, including motors for doors and seat positioning, as well as LED headlights. Sales have begun with 10 models across 3 package types, with plans to expand the lineup in the future.　　The automotive sector is seeing a surge in the number of electronic components, driven by the demand for enhanced safety and convenience. At the same time, there is a pressing need for improved power efficiency to optimize fuel and electricity consumption. Especially for MOSFETs essential for switching applications in automotive systems, there is a growing requirement for lower ON resistance to minimize loss and heat generation.　　ROHM, which has been supplying low ON-resistance MOSFETs for consumer and industrial equipment, has now extended this technology to the automotive sector. Adapting cutting-edge medium voltage processes to meet the stringent reliability requirements of automotive products allowed us to develop 10 N-channel MOSFET models characterized by low ON resistance.　　Offered in voltage ratings of 40V, 60V, and 100V, the new products incorporate a split-gate structure to achieve low ON-resistance, contributing to higher efficiency operation in automotive applications. All models are qualified under the AEC-Q101 automotive reliability standard, guaranteeing exceptional high reliability.　　Users can select from among three package types, depending on the application. For space-constrained sets like Advanced Driver Assistance Systems (ADAS), the compact DFN2020Y7LSAA (2.0mm × 2.0mm) and HSMT8AG (3.3mm × 3.3mm) packages are ideal. For automotive power applications, the widely used TO-252 (DPAK) package (6.6mm × 10.0mm) is also available. In addition, ROHM has further enhanced mounting reliability by utilizing wettable flank technology for the DFN2020Y7LSAA package and gull-wing leads for the TO-252 package.　　Going forward, ROHM plans to expand its lineup of medium-voltage N-channel MOSFETs to provide even greater miniaturization and higher efficiency in automotive applications. Mass production of the DFN3333 (3.3mm × 3.3mm) and HPLF5060 (5.0mm × 6.0mm) packages is scheduled for October 2024, followed by 80V products in 2025. P-channel products are also scheduled for future release.　　Application Examples◇ Vehicle motors (e.g., doors, seat positioning, power windows)　　◇ LED headlights　　◇ Car infotainment / displays　　◇ Advanced Driver Assistance Systems (ADAS)　　Internet Sales InformationOnline Distributors: DigiKey, Mouser and Farnell　　Pricing: $3.50/unit (samples, excluding tax)　　Availability: Now (OEM quantities)　　The products will be offered at other online distributors as they become available.　　(Sales Launch Date: June 2024)　　Online Distributors　　TerminologyON resistance (Ron)　　The resistance value between the Drain and Source while the MOSFET is ON. The smaller this value is, the lower the (power) loss during conduction.　　N-channel MOSFET　　A type of MOSFET that conducts when a positive voltage is applied to the Gate relative to the Source. N-channel MOSFETs are more widely adopted in the market today due to their lower ON-resistance (RDS(on)) over P-channel variants, facilitating use in a broad range of circuits.　　Split Gate Structure　　A technology that divides the gate of the MOSFET into multiple parts to efficiently regulate the flow of electrons. This ensures fast, reliable operation.　　Wettable Flank Technology　　A technique for plating the sides of the lead frame on bottom electrode packages to improve mounting reliability.　　Gull Wing Leads　　A terminal structure that spreads outwards from both sides of the package. It achieves excellent heat dissipation along with increased mounting reliability.
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Release time：2024-09-24 10:58 reading：634 Continue reading>>
ROHM's 4th Generation SiC <span style='color:red'>MOS</span>FET Bare Chips Adopted in Three EV Models of ZEEKR from Geely
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ROHM's 4th Generation SiC MOSFET Bare Chips Adopted in Three EV Models of ZEEKR from Geely

　　ROHM has announced the adoption of power modules equipped with 4th generation SiC MOSFET bare chips for the traction inverters in three models of ZEEKR EV brand from Zhejiang Geely Holding Group (Geely), a top 10 global automaker. Since 2023, these power modules have been mass produced and shipped from HAIMOSIC (SHANGHAI) Co., Ltd. - a joint venture between ROHM and Zhenghai Group Co., Ltd. to Viridi E-Mobility Technology (Ningbo) Co., Ltd, a Tier 1 manufacturer under Geely.　　Geely and ROHM have been collaborating since 2018, beginning with technical exchanges, then later forming a strategic partnership focused on SiC power devices in 2021. This led to the integration of ROHM’s SiC MOSFETs into the traction inverters of three models: the ZEEKR X, 009, and 001. In each of these EVs, ROHM’s power solutions centered on SiC MOSFETs play a key role in extending the cruising range and enhancing overall performance.　　ROHM is committed to advancing SiC technology, with plans to launch 5th generation SiC MOSFETs in 2025 while accelerating market introduction of 6th and 7th generation devices. What’s more, by offering SiC in various forms, including bare chips, discrete components, and modules, ROHM is able to promote the widespread adoption of SiC technology, contributing to the creation of a sustainable society.　　ZEEKR Models Equipped with ROHM’s EcoSiC™The ZEEKR X, which features a maximum output exceeding 300kW and cruising range of more than 400km despite being a compact SUV, is attracting attention even outside of China due to its exceptional cost performance. The 009 minivan features an intelligent cockpit and large 140kWh battery, achieving an outstanding maximum cruising range of 822km. And for those looking for superior performance, the flagship model, 001, offers a maximum output of over 400kW from dual motors with a range of over 580km along with a four-wheel independent control system.　　About ZEEKRZEEKR was launched in 2021 as the dedicated EV brand of Geely, a leading Chinese automaker that also owns well-established premium brands such as Volvo Cars and Lotus Cars. The name ZEEKR combines ZE, representing ZERO, the starting point of infinite possibilities, E for innovation in the electric era, and KR, the chemical symbol for krypton, a rare gas that emits light when energized. ZEEKR’s philosophy centers on harmonizing humanity, technology, and nature, aiming to redefine the perception of electric vehicles through innovative designs and technologies. The brand has garnered praise in markets outside of China, including in the US and Europe, for its impressive driving performance and range, with plans to expand sales to Western and Northern Europe.　　Please visit ZEEKR's website for more information: https://zeekrglobal.com/　　Market Background and ROHM’s EcoSiC™In recent years, there has been a push to develop more compact, efficient, lightweight electric systems to expand the adoption of next-generation electric vehicles (xEVs) and achieve environmental goals such as carbon neutrality. For electric vehicles in particular, improving the efficiency of the traction inverter, a key element of the drive system, is crucial for extending the cruising range and reducing the size of the onboard battery, heightening expectations for SiC power devices.　　As the world’s first supplier to begin mass production of SiC MOSFETs in 2010, ROHM continues to lead the industry in SiC device technology development. These devices are now marketed under the EcoSiC™ brand, encompassing a comprehensive lineup that includes bare chips, discrete components, and modules. For more information, please visit the SiC page on ROHM’s website: https://www.rohm.com/products/sic-power-devices 　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.　　Supporting InformationROHM is committed to providing application-level support, including the use of in-house motor testing equipment Additionally, by clicking on the URL below, users can access various supporting contents on ROHM’s website that facilitate the evaluation and introduction of 4th generation SiC MOSFETs, such as SPICE and other design models, simulation circuits for common applications (ROHM Solution Simulator), and evaluation board information.　　https://www.rohm.com/products/sic-power-devices/sic-mosfet#supportInfo
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Release time：2024-09-03 10:42 reading：668 Continue reading>>
BIWIN Wins India's
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BIWIN Wins India's "The Most Extensive Range Memory Solutions Provider" Award

　　June 28th had witnessed the successful hosting of the 16th NCN-ICT India Partner Summit 2024 at New Delhi, India. In the midst of the celebrations, BIWIN was honored with the esteemed “The Most Extensive Range Memory Solutions Provider of 2023 Award”, a reflection of its unwavering dedication to excellence and innovation.　　BIWIN is the Winner of “The Most Extensive Range Memory Solutions Provider of 2023”　　As an annual event that celebrates the achievements and contributions of key players in the ICT industry, the NCN-ICT Summit Awards brought together industry leaders, corporate executives, distributors, and resellers from India and abroad. It serves as a platform for industry professionals to gain insights into the latest innovations, share best practices, and explore new business opportunities.　　Through a combination of online voting and evaluations conducted by a panel of experts and judges, this accolade is a testament to BIWIN’s commitment to delivering a comprehensive range of high-performance memory solutions and pushing forward with innovation and product expansion.　　Recognized as a leader in the storage industry, BIWIN offers a comprehensive range of embedded flash-based storage solutions, including mobile phones, education devices, tablets, gaming machines, smart wearables, UAVs, action cameras, in-vehicle systems, DVR/NVRs, servers, OTT boxes, routers, and more. By providing tailored storage solutions, BIWIN supports innovation and advancement in these diverse technology areas.　　Attending on behalf of BIWIN, Rajesh Khurana, Country Manager for Consumer Business, was honored to participate in the NCN-ICT Summit & Awards Night 2024 and accept the awards. He expressed heartfelt gratitude for the industry recognition and committed to integrating purpose-driven initiatives into BIWIN’s future work. Khurana emphasized that these efforts will not only honor the awards but also elevate BIWIN to new industry heights.　　Rajesh Khurana was also privileged to be part of a renowned panel at the 16th Annual NCN-ICT Partners Summit, which was joined by top industry leaders from Geonix, Savex, Synersoft, Kaspersky and Micron. The discussion focused on the next big thing in ICT technology and examined the need for new business approaches, emerging ICT technologies, and changing business dynamics, as well as their impact on the vendor-partner ecosystem.　　As noted by Rajesh Khurana, industry projections indicate that the memory market is expected to experience continued growth in the coming years, especially with the advancement of AI technologies, big data and Internet of Things which set to drive the demand to new levels. BIWIN will also endeavor to provide improved memory solutions for customers while contributing to the industry’s future development.
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Release time：2024-08-20 13:46 reading：799 Continue reading>>
ROHM Develops the Industry's Smallest* C<span style='color:red'>MOS</span> Op Amp Optimized
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ROHM Develops the Industry's Smallest* CMOS Op Amp Optimized

　　ROHM has developed an ultra-compact 1.8V - 5V, rail-to-rail CMOS operational amplifier (op amp) - the TLR377GYZ. It is optimized for amplifying signals from sensors such as temperature, pressure, flow rate, used in smartphones, small IoT devices, and similar applications.　　The size of smartphones and IoT devices continues to decrease - requiring smaller components. To accurately amplify small signals as needed in high precision sensing, op amps must improve low input offset voltage and noise performance while continuing to shrink the form factor.　　The TLR377GYZ succeeds in balancing miniaturization with high accuracy (which has been difficult to achieve with conventional op amps) by further evolving proprietary circuit design, process, and packaging technologies cultivated over many years.　　Op amps’ input offset voltage and noise generation degrade amplification accuracy and can be suppressed by increasing the size of the built-in transistors - but at the expense of miniaturization. In response, ROHM developed proprietary circuits which achieve a maximum offset voltage as low as 1mV without increasing the size of the transistors. In addition, proprietary process technology greatly reduce flicker noise, while ultra-low noise is achieved with an input equivalent noise voltage density of 12nV/√Hz by optimizing the resistive components at the element level. Furthermore, the new product adopts a WLCSP (Wafer Level Chip Scale Package) with a ball pitch of just 0.3mm utilizing original packaging technology. This reduces size by approximately 69% compared to conventional products and 46% over existing compact products.　　The IC-mounted conversion board that can replace SSOP6 packages is also offered to support replacement considerations and initial evaluation. Both the new product and conversion board are available for purchase through online distributors. In addition, the high accuracy SPICE model - called ROHM Real Model - is available on ROHM’s website for verification simulations.　　Going forward, in addition to greater miniaturization and accuracy, ROHM will continue to improve op amp performance by reducing power consumption further utilizing proprietary ultra-low current consumption technology.　　Key Product FeatureA shut down function required by mobile devices is built in, reducing power consumption during standby mode.　　Application Examples• Smartphones, compact IoT devices equipped with measurement sensor amps, etc.　　High Accuracy Simulation Models: ROHM Real ModelsROHM Real Models are new high accuracy SPICE models that utilizes original model-based technology to faithfully reproduce the electrical and temperature characteristics of the actual IC, resulting in a perfect match between the IC and simulation values. This ensures reliable verification, contributing to more efficient application development - for example by preventing rework after prototyping. ROHM Real Models are now available on ROHM’s website.　　TerminologyInput Offset Voltage　　The error voltage that occurs between the input terminals of an op amp.　　Flicker Noise　　Noise inherent to electronic components such as semiconductors. Power is inversely proportional to frequency, so the lower the frequency the greater the power. Also called 1/f noise or pink noise. Other types of noise include thermal (i.e. Johnson-Nyquist, white) noise.　　Equivalent Input Noise Voltage Density　　The value obtained by short-circuiting the input terminals and referring the noise voltage density appearing at the output to the input terminals, i.e., since amplifiers have gain (amplification factor), dividing the output noise voltage density by the gain allows for a fair evaluation of the amplifier’s intrinsic noise characteristics.　　ROHM Real Model　　A high-accuracy simulation model that succeeds in achieving a perfect match between the actual IC and simulation values utilizing ROHM’s proprietary model-based technology.
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Release time：2024-08-13 14:03 reading：638 Continue reading>>
ROHM’s New SBDs: Achieving Class-Leading* Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench <span style='color:red'>MOS</span> Structure that Significantly Improves VF-IR Trade-Off
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ROHM’s New SBDs: Achieving Class-Leading* Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off

　　ROHM has developed 100V breakdown Schottky barrier diodes (SBDs) that deliver industry-leading reverse recovery time (trr) for power supply and protection circuits in automotive, industrial, and consumer applications.　　Although numerous types of diodes exist, highly efficient SBDs are increasingly being used inside a variety of applications. Particularly SBDs with a trench MOS structure that provide lower VF than planar types enable higher efficiency in rectification applications. One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies - resulting in higher power loss when used for switching.　　In response, ROHM developed a new series utilizing a proprietary trench MOS structure that simultaneously reduces both VF and IR (which are in a trade-off relationship) while also achieving class-leading trr.　　Expanding on the four existing conventional SBD lineups optimized for a variety of requirements, the YQ series is ROHM’s first to adopt a trench MOS structure. The proprietary design achieves class-leading trr of 15ns that reduces trr loss by approx. 37% and overall switching loss by approx. 26% over general trench-type MOS products, contributing to lower application power consumption. The new structure also improves both VF and IR loss compared to conventional planar type SBDs. This results in lower power loss when used in forward bias applications such as rectification, while also providing less risk of thermal runaway which is a major concern with SBDs. As such, they are ideal for sets requiring high-speed switching, such as drive circuits for automotive LED headlamps and DC-DC converters in xEVs that are prone to generate heat.　　Going forward, ROHM will strive to further improve the quality of its semiconductor devices, from low to high voltages, while strengthening its expansive lineup to further reduce power consumption and achieve greater miniaturization.　　SBD Trench MOS StructureThe trench MOS structure is created by forming a trench using polysilicon in the epitaxial wafer layer to mitigate electric field concentration. This reduces the resistance of the epitaxial wafer layer, achieving lower VF when applying voltage in the forward direction. At the same time, during reverse bias the electric field concentration is minimized, significantly decreasing IR. As a result, the YQ series improves VF and IR by approx. 7% and 82%, respectively, compared to conventional products.　　And unlike with typical trench MOS structures where trr is worse than planar types due to larger parasitic capacitance (resistance component in the device), the YQ series achieves an industry-leading trr of 15ns by adopting a unique structural design. This allows switching losses to be reduced by approx. 26%, contributing to lower application power consumption.　　Application Examples• Automotive LED headlamps • xEV DC-DC converters • Power supplies for industrial equipment　　• Lighting　　☆: Under development　　* The TO-277GE package products released and sold by online distributors this time are rated for car infotainment and body systems. For each part number, we are preparing grades that can be installed in powertrains, etc. (using the same part number), with mass production scheduled to start in September 2024. (The packaging symbol after the above part numbers will differ)　　Product Page and Related InformationApplication notes highlighting the advantages of these new products in circuits along with a white paper that showcases the features of each SBD series are available on ROHM's website. An SBD page is also available that allows users to narrow down product options by entering voltage conditions and other parameters, facilitating the selection process during design. Click on the URLs below for more information.　　■ ROHM SBD Product Page　　https://www.rohm.com/products/diodes/schottky-barrier-diodes　　■ Application Notes　　Advantages of YQ Series: Compact and Highly Power Conversion Efficiency Schottky Barrier Diodes for Automotive　https://fscdn.rohm.com/en/products/databook/applinote/discrete/diodes/yq_sbd_automotive_an-e.pdf　　■ White Paper　　ROHM's SBD Lineup Contributes to Greater Miniaturization and Lower Loss in Automotive, Industrial, and Consumer Equipment　　https://fscdn.rohm.com/en/products/databook/white_paper/discrete/diodes/sbd_lineup_wp-e.pdf　　Online Sales Information　　Applicable Part Nos: Refer to the above table.　　Availability: December 2023　　Pricing: $2,5/unit (samples, excluding tax)　　The products will be sold at other online distributors as well.　　Terminologytrr (Reverse Recovery Time)　　The time it takes for the switching diode to switch from the ON state to completely OFF. The lower this value is, the smaller the switching losses.　　Forward Voltage (VF)　　A voltage drop that occurs when electricity flows in the forward direction from + to -. The lower this value is, the higher the efficiency.　　Reverse Current (IR)　　Reverse current generated when reverse voltage is applied. The lower this value is, the smaller the power consumption (reverse power loss).　　Thermal Runaway　　When a diode is conducted in the reverse direction, heat generated within the chip may exceed the heat dissipation of the package, causing IR to increase and eventually lead to destruction, - a phenomenon called thermal runaway. For SBDs with high IR values, thermal runaway is especially likely to occur, so care must be taken when designing circuits.
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Release time：2024-02-20 11:26 reading：1924 Continue reading>>
ROHM’s Compact SOT-223-3 600V <span style='color:red'>MOS</span>FETs Contribute to Smaller, Lower Profile Designs for Lighting Power Supplies, Pumps, and Motors
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ROHM’s Compact SOT-223-3 600V MOSFETs Contribute to Smaller, Lower Profile Designs for Lighting Power Supplies, Pumps, and Motors

　　ROHM has added a lineup of compact 600V Super Junction MOSFETs - the R6004END4 / R6003KND4 / R6006KND4 / R6002JND4 / R6003JND4. These devices are ideal for small lighting power supplies, pumps, and motors.　　In recent years, power supplies for lighting and motors for pumps are required to be smaller as devices become more sophisticated - spurring the demand for compact MOSFETs that are essential for switching operation.　　Generally, however, it has been difficult to reduce the size of Super Junction MOSFETs while maintaining an optimal balance between high breakdown voltage and low ON resistance. In response, after reviewing the shape of the mounted chip, ROHM was able to develop 5 models in the SOT-223-3 package (6.50mm × 7.00mm × 1.66mm) - providing a smaller, lower profile form factor without compromising the performance of conventional products.　　Compared to the conventional TO-252 package (6.60mm × 10.00mm × 2.30mm), ROHM’s new products reduce area and thickness by 31% and 27% - contributing to smaller, lower profile applications. At the same time, the same land pattern (footprint) as the TO-252 package can be used, enabling mounting on existing circuit boards without modification.　　Offering distinctive features, three of the models optimized for compact power supplies. The R6004END4, characterized by low noise, is suitable for applications where noise is a concern, while the R6003KND4 and R6006KND4, capable of high-speed switching, are ideal for sets requiring low loss, high efficiency operation. The R6002JND4 and R6003JND4 utilize proprietary PrestoMOS technology to achieve significantly lower switching losses by speeding up reverse recovery time (trr), making them well-suited for motors-equipped devices.　　Supporting materials such as application notes, technical documents, and SPICE simulation models for each product are available on ROHM’s website free of charge to enable quick market introduction.　　Going forward, ROHM will continue to expand its Super Junction MOSFET lineup in different packages and even lower ON resistances that contribute to solving social issues such as environmental protection by reducing power consumption in variety devices.　　Product Lineup　　For compact power supplies　　Application Examples        • R6004END4 / R6003KND4 / R6006KND4: Lighting, Air conditioners, Refrigerators, etc.　　• R6002JND4 / R6003JND4: Motors for pumps, fans, copiers, etc.　　Online Sales InformationSales Launch Date: December 2023　　Pricing: $3.0/unit (samples, excluding tax)　　Online Distributors: DigiKey, Mouser, and Farnell　　The products will be offered at other online distributors as they become available.　　Online Distributors　　For More Information about ROHM’s Super Junction MOSFETVarious resources are available on ROHM's website, including application notes on the SOT-223-3 package and other documents essential for circuit design.　　https://www.rohm.com/support/super-junction-mosfet　　PrestoMOS“Presto” is an Italian musical term meaning “very fast.”　　PrestoMOS is ROHM’s original power MOSFET that maintains the high withstand voltage and low ON resistance of Super Junction MOSFETs while speeding up the reverse recovery time of the built-in diode. Reducing switching losses makes it ideal for a wider range of applications with inverter circuits, such as air conditioners and refrigerators.　　TerminologySuper Junction MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A type of transistor, MOSFETs can be divided by device structure into DMOSFET (Double-diffused MOSFET), planar, and super junction topologies. Super Junction MOSFETs deliver superior breakdown voltage and output current than both DMOSFETs and planar types, featuring lower loss when handling large power.　　trr (Reverse Recovery Time)　　The time it takes for the built-in diode to switch from the ON state to completely OFF. The lower this value is, the smaller the loss during switching.
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Release time：2024-01-24 13:40 reading：2087 Continue reading>>
ROHM’s New 5-Model Lineup of Low ON Resistance 100V Dual <span style='color:red'>MOS</span>FETs
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ROHM’s New 5-Model Lineup of Low ON Resistance 100V Dual MOSFETs

　　ROHM has developed dual MOSFETs that integrate two 100V chips in a single package - ideal for fan motor drive applied in communication base stations and industrial equipment. New five-models have been added as part of the HP8KEx/HT8KEx (Nch+Nch) and HP8MEx (Nch+Pch) series.　　Recent years have seen a transition to higher voltages from conventional 12V/24V to 48V systems in communication base stations and industrial equipment, - intending to achieve higher efficiency by reducing current values. In these situations, switching MOSFETs are required a withstand voltage of 100V to account for voltage fluctuations, as 48V power supplies are also used in the fan motors for cooling these applications. However, increasing the breakdown voltage raises ON resistance (RDS(on)) (which is in a trade-off relationship), leading to decreased efficiency, making it difficult to achieve both lower RDS(on) and higher breakdown voltage. Moreover, unlike multiple individual drive MOSFETs normally applied in fan motors -　dual MOSFETs that integrate two chips in one package are increasingly being adopted to save space.　　In response, ROHM developed two new series - the HP8KEx/HT8KEx (Nch+Nch) and the HP8MEx (Nch+Pch) - that combine Nch and Pch MOSFET chips using the latest processes. Both series achieve the industry’s lowest RDS(on) by adopting new backside heat dissipation packages with excellent heat dissipation characteristics. As a result, RDS(on) is reduced by up to 56% compared with standard dual MOSFETs (19.6mΩ for the HSOP8 and 57.0mΩ for the HSMT8 Nch+Nch), contributing to significantly lower set power consumption. At the same time, combining two chips in a single package provides greater space savings by reducing area considerably. For example, replacing two single-chip TO-252 MOSFETs with one HSOP8 decreases footprint by 77%.　　Next, ROHM will continue to expand its dual MOSFET lineup to withstand voltages ideal for industrial equipment while also developing low-noise variants. This is expected to contribute to solving social issues such as environmental protection by saving space and reducing power consumption in various applications.　　Application Examples        - Fan motors for communication base stations　　- Fan motors for factory automation, and other industrial equipment　　- Fan motors for data center servers, etc.　　Combination with a pre-driver IC to achieve the optimal motor drive solutionCombining these products with ROHM’s market-proven pre-driver ICs for single-/3-phase brushless motors make it possible to consider even smaller motors featuring lower consumption and quieter drive. By providing total support for peripheral circuit design that marries the dual-MOSFET series with pre-driver ICs, ROHM can offer the best motor drive solutions for customer needs.　　Solution examples with 100V Dual MOSFETs　　- HT8KE5 (Nch+Nch Dual MOSFET) + BM64070MUV (3-Phase Brushless Motor Pre-Driver IC)　　- HT8KE6 (Nch+Nch Dual MOSFET) + BM64300MUV (3-Phase Brushless Motor Pre-Driver IC) and more
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Release time：2023-10-19 16:07 reading：1993 Continue reading>>
ROHM Semiconductor R6049YN N-Channel Power <span style='color:red'>MOS</span>FETs
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ROHM Semiconductor R6049YN N-Channel Power MOSFETs

　　ROHM Semiconductor R6049YN N-Channel Power MOSFETs offer high-speed switching and low-on resistances for switching applications. Operating in a -55°C to +150°C temperature range, these single-channel enhancement mode devices feature a 600V drain-source breakdown voltage, a ±22A or ±49A continuous drain current, and a 65nC total gate charge. The ROHM R6049YN N-Channel Power MOSFETs are available in TO-220AB-3, TO-220FM-3, and TO-247G-3 package options.     FEATURES　　》Low on-resistance　　》Fast switching　　》Drive circuits can be simple　　》Si technology　　》Enhancement channel mode　　》Through-hole mount　　》Halogen-free mold compound　　》Lead-free plating and RoHS-compliant　　SPECIFICATIONS　　》600V drain-source breakdown voltage　　》±22A or ±49A continuous drain current　　》±147A pulsed drain current　　》82mΩ on-drain-source resistance　　》±30V gate-source voltage　　》4V to 6V gate-source threshold voltage range　　》100μA maximum zero gate voltage drain current　　》±100nA maximum gate-source leakage current　　》49A maximum source current　　》1.5V maximum source-drain voltage　　》1.0Ω typical gate resistance　　》6.5μC typical reverse recovery charge　　》34A typical peak reverse recovery current　　》Typical gate charge　　。65nC total　　。21nC source　　。30nC drain　　》7V typical gate plateau voltage　　》90W or 448W power dissipation　　》Typical capacitance　　。2940pF input　　。100pF output　　。Effective output　　.100pF energy related　　.650pF time related　　》Single pulse avalanche　　。2.8A current　　。208mJ energy　　》Typical time　　。38ns turn-on delay　　。33ns rise　　。91ns turn-off delay　　。19ns fall　　。380ns reverse recovery　　》-55°C to +150°C operating temperature range　　》TO-220AB-3, TO-220FM-3, and TO-247G-3 package options　　INNER CIRCUIT
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Release time：2023-09-25 15:58 reading：2079 Continue reading>>
ROHM’s New 600V Super Junction <span style='color:red'>MOS</span>FETs Combine Class-Leading Noise Characteristics with the Industry’s Fastest* Reverse Recovery Time
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ROHM’s New 600V Super Junction MOSFETs Combine Class-Leading Noise Characteristics with the Industry’s Fastest* Reverse Recovery Time

　　ROHM has added three new models, the R60xxRNx series, to its PrestoMOS™ lineup of 600V Super Junction MOSFETs. These devices are optimized for driving small motors in refrigerators, ventilation fans, and other applications where noise suppression is important.　　Greater energy efficiency in equipment is required in recent years in response to the tightening of the global power supply, with motor drives accounting for up to 50% of the world’s total power demand. For this reason, high efficiency MOSFETs are increasingly being used in inverter circuits that convert power to drive motors. At the same time, however, countermeasures against noise generated from MOSFET operation typically involve adding components and/or changing circuit patterns, so there is a need to reduce both man-hours and costs. But reducing power loss and noise are generally in a trade-off relationship, making it difficult to achieve both.　　To meet these needs, in 2012, ROHM began mass production of the PrestoMOS™ lineup of Super Junction MOSFETs featuring the industry's fastest reverse recovery time(trr) characteristics, which has received high marks for achieving lower power consumption. The lineup now includes three new models that provide best-in-class noise characteristics while maintaining the fast trr through an optimized structure.　　The new R60xxRNx series maintains the high-speed trr characteristics of PrestoMOS™ while minimizing noise. An industry-best trr of 40ns is achieved by improving conventional lifetime control technology, reducing switching losses by approx. 30% over general products that translates to lower application power loss. At the same time, the newly developed Super Junction structure reduces noise characteristics (which are inversely related to faster trr) by about 15dB compared to standard products (under ROHM measurement conditions at 40MHz). Delivering industry-leading characteristics reduces the number of man-hours and parts required for noise countermeasures.　　Going forward, ROHM will continue to expand its high voltage MOSFET lineup in different packages and even lower ON resistances that contribute to environmental protection by reducing power consumption in a variety of applications.　　ROHM’s New 600V Super Junction MOSFETs Combine Class-Leading　　Noise Characteristics with the Industry’s Fastest* Reverse Recovery Time　　Contributes to lower power loss along with fewer man-hours and external parts required for noise suppression in devices equipped with small motors*ROHM July 13th, 2023 study　　Product LineupOnline Sales InformationVideoFeatured Products　　July 13th, 2023　　ROHM has added three new models, the R60xxRNx series, to its PrestoMOS™ lineup of 600V Super Junction MOSFETs. These devices are optimized for driving small motors in refrigerators, ventilation fans, and other applications where noise suppression is important.　　Greater energy efficiency in equipment is required in recent years in response to the tightening of the global power supply, with motor drives accounting for up to 50% of the world’s total power demand. For this reason, high efficiency MOSFETs are increasingly being used in inverter circuits that convert power to drive motors. At the same time, however, countermeasures against noise generated from MOSFET operation typically involve adding components and/or changing circuit patterns, so there is a need to reduce both man-hours and costs. But reducing power loss and noise are generally in a trade-off relationship, making it difficult to achieve both.　　To meet these needs, in 2012, ROHM began mass production of the PrestoMOS™ lineup of Super Junction MOSFETs featuring the industry's fastest reverse recovery time(trr) characteristics, which has received high marks for achieving lower power consumption. The lineup now includes three new models that provide best-in-class noise characteristics while maintaining the fast trr through an optimized structure.　　The new R60xxRNx series maintains the high-speed trr characteristics of PrestoMOS™ while minimizing noise. An industry-best trr of 40ns is achieved by improving conventional lifetime control technology, reducing switching losses by approx. 30% over general products that translates to lower application power loss. At the same time, the newly developed Super Junction structure reduces noise characteristics (which are inversely related to faster trr) by about 15dB compared to standard products (under ROHM measurement conditions at 40MHz). Delivering industry-leading characteristics reduces the number of man-hours and parts required for noise countermeasures.　　Going forward, ROHM will continue to expand its high voltage MOSFET lineup in different packages and even lower ON resistances that contribute to environmental protection by reducing power consumption in a variety of applications.　　PrestoMOS™     ‘Presto’ is an Italian musical term meaning ‘very fast’.　　PrestoMOS™ is ROHM’s original power MOSFET that maintains the high withstand voltage and low ON resistance of Super Junction MOSFETs while speeding up the trr of the built-in diode. Reducing switching losses make it ideal for a wider range of applications with inverter circuits, such as air conditioners and refrigerators.　　*PrestoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.　　Application Examples◇ Refrigerators◇ Ventilation fans◇ Fan motorsAlso suitable for a variety of devices equipped with small motors.　　Online Sales InformationSales Launch Date: March 2023　　Online Distributors: DigiKey, Mouser, and Farnell　　Pricing: $3.5/unit (samples, excluding tax)　　Products and evaluation boards will be offered at online distributors as they become available.　　TerminologySuper Junction MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A type of transistor, MOSFETs can be divided by device structure into DMOSFET (Double-diffused MOSFET), planar, and super junction topologies. Super Junction MOSFETs deliver superior breakdown voltage and output current than both DMOSFETs and planar types, while also featuring lower loss when handling large power.　　trr (Reverse Recovery Time)　　The time it takes for the built-in diode to switch from the ON state to completely OFF. The lower this value is, the smaller the loss during switching.　　Lifetime Control　　The time it takes for carriers (holes or electrons) that have moved when voltage is applied to the semiconductor to recombine when the voltage is stopped is called the lifetime, and the technology that makes recombination easier by intentionally creating defects in the semiconductor crystal structure is called lifetime control.
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Release time：2023-09-15 13:48 reading：2147 Continue reading>>

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