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| 产品描述：
TRANS NPN PREBIAS/PNP 0.15W EMT6
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| 标准包装：8000 | ||
| 数据手册： -- |
- 规格参数
- 产品特性
- 技术文档
- 产品评论
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 500mV @ 5mA, 50mA |
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| Resistor - Base (R1) (Ohms) | 2.2k |
| Power - Max | 150mW |
| Resistor - Emitter Base (R2) (Ohms) | 2.2k |
| Current - Collector (Ic) (Max) | 100mA, 150mA |
| Category | Discrete Semiconductor Products |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Mounting Type | Surface Mount |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20mA, 5V / 180 @ 1mA, 6V |
| Categories | Discrete Semiconductor Products -> Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Frequency - Transition | 250MHz, 140MHz |
| Package / Case | SOT-563, SOT-666 |
| Transistor Type | 1 NPN Pre-Biased, 1 PNP |
| Supplier Device Package | EMT6 |
| Part Status | Not For New Designs |
| Manufacturer | Rohm Semiconductor |
| Family | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
| Current - Collector Cutoff (Max) | 500nA |
| Packaging | Tape & Reel (TR) |
| Resistor - Base (R1) | 2.2 kOhms |
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