SK Innovation Announces New Battery Manufacturing Plant in Georgia, United States

Release time：2018-12-05
author：Ameya360
source：CTIMES
reading：2097

SK Innovation announced it will create more than 2,000 jobs and invest $1.67 billion to build a new electric vehicle (EV) battery manufacturing plant in Georgia.

SK Innovation, which is part of SK Group, is making the investment to better compete in the growing global EV battery market. Customers for SK Innovation include Mercedes-Benz and Hyundai-Kia Motors, and this new investment will provide opportunities for SK Innovation to bring its world-class products to additional automakers in the United States.

“We are excited to bolster our presence in the United States by making this investment in Georgia,” said Jun Kim, CEO of SK Innovation. “SK Innovation is a worldwide leader in the energy industry and this latest investment will allow us to work with the growing automotive industry in the Southeastern United States, ensuring future partnerships for years to come.”

The new plant will be located in Jackson County, Georgia. Construction will occur in two phases, beginning in early 2019. The first phase will invest approximately $1 billion and employ more than 1,000 advanced manufacturing employees, making it the largest scale electric vehicle battery plant in the United States. SK Innovation leadership worked closely with federal, state and local officials to finalize the investment.

“SK Group’s investment in the state of Georgia is undeniable proof that President Trump’s economic policies are working for the American economy and American worker,” said U.S. Secretary of Commerce Wilbur Ross.

“I am delighted that a world-class technology company such as SK sees the merits of manufacturing in the United States. As similar companies across the world are discovering, there is no better place to do business than right here in America.”

（"Note: The information presented in this article is gathered from the internet and is provided as a reference for educational purposes. It does not signify the endorsement or standpoint of our website. If you find any content that violates copyright or intellectual property rights, please inform us for prompt removal."）

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SK hynix Reportedly Pulls Forward HBM4E Sample Timeline, Eyeing June–July Shipments to Key Customers
Trade news

SK hynix Reportedly Pulls Forward HBM4E Sample Timeline, Eyeing June–July Shipments to Key Customers

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SK hynix Reportedly to Double DRAM Capacity to 1M Monthly Wafers by 2030, Speeds Yongin Expansion
Trade news

SK hynix Reportedly to Double DRAM Capacity to 1M Monthly Wafers by 2030, Speeds Yongin Expansion

　　TrendForce　　SK hynix is reportedly preparing a major DRAM capacity expansion. According to The Elec, the company has shared plans with key suppliers to nearly double its DRAM wafer production capacity by 2030–2031 from current levels. The plan aligns with comments made by SK Group Chairman Chey Tae-won at Computex 2026, where he said the company would “double overall wafer production capacity within five years at full speed.”　　The report says SK hynix aims to raise monthly DRAM wafer capacity from about 550,000 wafers today to roughly 1 million wafers by 2030. The current figure includes around 200,000 wafers per month from its Wuxi fab in China.　　Much of the expansion will be centered on the Yongin Semiconductor Cluster. According to the report, SK hynix plans to divide its first Yongin fab into six cleanrooms and has moved up the first equipment installation schedule from May 2027 to February 2027. The fab is expected to add 360,000 wafers per month of DRAM capacity by the first half of 2030.　　SK hynix is also expanding its M15X fab in Cheongju. The report says the facility is scheduled to begin operations in the second half of 2026 with an initial capacity of 40,000 wafers per month, rising to about 80,000 wafers per month in 2027.　　Combined with the additional output from Yongin, SK hynix’s total DRAM wafer input capacity could approach 1 million wafers per month between 2030 and 2031, according to the report.　　Notably, all newly added capacity is currently designated for DRAM production, the report notes. For NAND flash, SK hynix is expected to focus on technology upgrades, such as increasing layer counts, rather than significant capacity expansion.　　Equipment Suppliers See Near-Term Gains, but Remain Cautious　　The expansion of the Yongin Semiconductor Cluster is drawing a growing number of semiconductor equipment and materials suppliers. According to iNews24, equipment and materials suppliers continue to move into the Yongin Semiconductor Cluster. South Korean materials, parts, and equipment firms, along with ASML, Lam Research, and Tokyo Electron Korea, have either relocated or are in the process of moving in.　　However, The Elec notes that suppliers remain cautious about execution given the scale and pace of the expansion plan. Supplier sources cited by the report said the increased investment is expected to provide a meaningful near-term boost for equipment and materials vendors, though achieving the full expansion target will ultimately depend on whether market demand remains strong enough to support it.　　Samsung Also Accelerating DRAM Expansion　　As for Samsung, according to Digital Daily, Samsung Electronics is accelerating DRAM capacity expansion at its P4 fab in Pyeongtaek by bringing forward its investment schedule. The report says Samsung’s DRAM investment next year could increase by roughly 10,000 wafers per month above previous estimates. Some industry observers also expect Samsung to begin issuing purchase orders for the P5 line from the second quarter of next year, potentially supporting investment equivalent to 150,000 wafers per month in 2027.
2026-06-08 10:46 reading：517
SK Chair Sees Memory Shortage Through 2030, Eyes Capacity Doubling and Stronger TSMC, Taiwan Ties
Trade news

SK Chair Sees Memory Shortage Through 2030, Eyes Capacity Doubling and Stronger TSMC, Taiwan Ties

　　As next-gen HBM solutions has become a key focus at COMPUTEX amid surging AI demand, SK Group Chairman Chey Tae-won made a brief visit to the SK hynix booth on June 2 and spoke with the media. According to TechNews, Chey expects supply-demand tightness in the memory market to persist through 2030.　　Notably, he also said SK will make full efforts to expand production under tight supply conditions, targeting a doubling of total wafer capacity over the next five years, the report adds.　　Marking his first appearance at COMPUTEX, Chey noted that Taiwan has a highly complete AI supply chain and a strong partner ecosystem. As SK Group continues to expand its AI business, he stressed the need to deepen collaboration with more Taiwanese companies. Beyond TSMC, he said meetings with firms such as Foxconn and Asus are also part of this visit to better understand ongoing cooperation and explore ways to further strengthen partnerships, according to the report.　　SK hynix and TSMC have a long-standing partnership, particularly in logic die integration as custom HBM solutions become an emerging industry trend. As previously reported by The Chosun Daily, SK hynix is expected to adopt a 10nm-class 6th-generation (1c) DRAM process for the core die in its HBM4E, paired with a logic die built on TSMC’s 3nm node. For HBM4 supplied to NVIDIA this year, the company is said to be using a 10nm-class 5th-generation (1b) DRAM core die alongside a logic die based on TSMC’s 12nm process.　　Jensen Huang’s SK hynix Booth Visit Marks Another COMPUTEX Highlight　　It is also wort noting that NVIDIA CEO Jensen Huang also visited the SK hynix booth at COMPUTEX 2026 on June 2, meeting SK Group Chairman Chey Tae-won for the second consecutive day, following a dinner meeting the previous evening. According to Chosun Biz, after his keynote the day before—where he directly identified SK hynix as a supplier of next-generation HBM4—Huang toured the exhibition floor and reviewed the company’s latest memory products.　　During the visit, Huang joined Chey at the SK hynix booth to examine the showcased portfolio, including HBM4E wafers and chipset samples, which entered sampling at the end of last month, the report says. It also marked the first public unveiling of an HBM4E physical mock-up, according to Chosun Biz.
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SK hynix Introduces iHBM Solution, Targets HBM5 Adoption with 30% Thermal Resistance Reduction
Trade news

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　　As thermal management emerges as a key challenge for HBM, SK hynix has unveiled its iHBM solution, which integrates cooling elements (ICEs) directly into the HBM package. The company plans to adopt the technology in next-generation products, including HBM5, according to its press release.　　According to SK hynix, unlike conventional HBM designs that dissipate heat through the core die, iHBM integrates cooling elements (ICEs), made of thermally conductive, electrically non-conductive silicon-based materials, directly into the D2D PHY between HBM and GPUs, where heat is most concentrated. The company said the technology reduces thermal resistance by 30% and improves operating stability.　　As highlighted by SK hynix, the iHBM solution adopts a structural approach to thermal management by creating an additional heat dissipation path within the package. It also leverages the company’s wafer-level packaging (WLP) process and proven MR-MUF technology to enable stable high-volume manufacturing.　　In addition, its compatibility with existing System-in-Package (SiP) architectures allows customers to adopt the thermal solution with minimal design modifications, SK hynix adds.　　In terms of future roadmap, SK hynix plans to incorporate the iHBM solution into next-generation HBM products, including HBM5, with the goal of improving the stability and efficiency of HPC systems and AI data centers.　　Another Key Technology beyond Hybrid Bonding　　Alongside SK hynix’s latest iHBM solution, hybrid bonding is widely seen as a key approach to addressing heat dissipation challenges in 20-stack HBM, which, as previously reported by The Elec, are expected to become increasingly difficult.　　As explained in the report, hybrid bonding differs from conventional thermo-compression (TC) bonding, which connects chips through soldered micro-bumps. Instead, it bonds dielectric materials such as silicon dioxide (SiO₂) and copper through an annealing process at temperatures of roughly 200°C to 400°C.　　By heating and gradually cooling copper sealed within dielectric layers, thermal expansion and vertical pressure enable direct copper-to-copper diffusion bonding without reaching copper’s melting point, the report notes, adding this approach helps reduce thermal damage to semiconductor circuits while delivering improved thermal and electrical performance.
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