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GigaDevice Deepens Commitment to Japan, Advancing Local Services and Global Collaboration

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, has officially opened its new office in Minato City, Tokyo. This milestone reflects the company's deepening commitment to the Japanese market and marks a significant step in enhancing local customer support, strengthening regional collaboration, and advancing its global development efforts.　　Japan has long served as a vital pillar of GigaDevice's global strategy. Over the years, the company has expanded its local team, refined operation to meet evolving customer needs, and established a responsive professional service system. This new office will further enhance GigaDevice's technical responsiveness and agility, foster closer collaboration with customers, and help accelerate product validation and commercialization in today's fast-changing market landscape.　　Working closely with customers in Japan, GigaDevice has broadened the adoption of its solutions across key application sectors such as industrial, automotive, consumer electronics, and the Internet of Things. At the same time, the company continues to deepen cooperation with local partners in supply chain integration and ecosystem development, offering a comprehensive portfolio of Flash memory, MCU, sensor, and analog solutions that have earned broad market recognition.　　"Japan has always been a vital component of our global strategy," said Jennifer Zhao, GigaDevice Global Business CEO. "We will continue to leverage our global synergy and strengthen local service capabilities to drive product innovation and industry advancement alongside our customers and partners."　　"We greatly value the trust and long-term partnerships we have built with our customers in Japan," added Sam Li, GigaDevice Japan Regional GM, "In a market that's becoming increasingly complex, our goal is to consistently deliver exceptional service and competitive products that meet diverse business needs and create lasting value."　　As one of GigaDevice's key customers, Nidec Corporation has been working closely with the company. Ryuji Omura, Head of Nidec Semiconductor Solutions Center, commented: "GigaDevice's rapid growth and technological innovation, along with its genuine commitment to customers, have built a solid foundation of trust between our companies and made it one of our most valued supplier partners. We look forward to seeing GigaDevice continue to lead the semiconductor industry and contribute to the advancement of society."　　As a global leading fabless supplier, GigaDevice continues to combine global synergy with localized execution. Following the establishment of its global headquarters in Singapore, the company has strengthened its presence across Asia, Europe, and the Americas, building a responsive, demand-driven sales and service network. Looking ahead, GigaDevice will continue to invest in Japan, refining its product offerings, enhancing its service delivery, and expanding its collaborative mechanisms to drive a smarter, more efficient, and sustainable future together with its customers and partners.

Key word：

GigaDevice

Release time：2025-10-21 16:49 reading：368 Continue reading>>

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TAIYO YUDEN Commercializes 1005M-Size Embeddable Multilayer Ceramic Capacitor with 22-μF Capacitance for AI Servers

　　TAIYO YUDEN CO., LTD. has commercialized and begun mass production of embeddable multilayer ceramic capacitor (MLCC) that achieves a capacitance of 22-μF in a 1005M size (1.0 x 0.5 mm).　　This ceramic capacitor is an MLCC designed for decoupling applications on IC power lines used in AI servers and other types of information devices.　　Components embedded in a board require high precision in terms of flatness of the external electrodes for connection to the circuit. With respect to this requirement, TAIYO YUDEN has commercialized an embeddable MLCC that achieves a 22-μF capacitance in a 1005M size by enhancing external electrode formation technology and other elemental technologies.　　Mass production of the capacitor began at our Tamamura Plant (Sawa District, Gunma Prefecture) in August 2025. Samples are available for 20 yen per unit.　　Technology Background　　AI servers and other types of devices with advanced information processing capabilities are equipped with ICs that consume extremely large amounts of power. For decoupling purposes in such power supply circuits, small, high-capacity MLCCs are required to handle large currents.　　Additionally, to minimize circuit loss and noise, it is important to route the power supply circuit close to the ICs. Traditional power supply circuits are routed around ICs. But, technological developments are progressing, allowing them to be placed closer, such as on the back of the board or directly under the ICs. Thus, embeddable MLCCs need to be equipped with high-precision external electrodes to connect to the lines.　　To satisfy this need, TAIYO YUDEN has improved its external electrode formation technology and commercialized 1005M-size embeddable MLCC with a capacitance of 22 μF.　　TAIYO YUDEN is continuing to develop new MLCCs with higher capacitance and other distinguishing features.　　■ Application　　Decoupling applications on IC power lines used in AI servers and other types of information devices

Key word：

TAIYO

Release time：2025-10-20 16:40 reading：340 Continue reading>>

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ROHM Publishes White Paper on Power Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale AI Infrastructure

　　ROHM has released a new white paper detailing advanced power solutions for AI data centers based on the novel 800 VDC architecture, reinforcing its role as a key semiconductor industry player in driving system innovation.　　As part of the collaboration announced in June 2025, the white paper outlines optimal power strategies that support large-scale 800 VDC power distribution across AI infrastructure.　　The 800 VDC architecture represents a highly efficient, scalable power delivery system poised to transform data center design by enabling gigawatt-scale AI factories. ROHM offers a broad portfolio of power devices, including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), and is among the few companies globally with the technological expertise to develop analog ICs (control and power ICs) capable of maximizing device performance.　　Included in the white paper are ROHM’s comprehensive power solutions spanning a wide range of power devices and analog IC technologies, supported by thermal design simulations, board-level design strategies, and real-world implementation examples.　　[Access the white paper here]　　Key Highlights of the White Paper• Rising Rack Power Consumption: Power demand per rack in AI data centers is rapidly increasing, pushing conventional 48V/12V DC power supply systems to their limits.　　• Shift to 800 VDC: Transitioning to an 800 VDC architecture significantly enhances data center efficiency, power density, and sustainability.　　• Redefined Power Conversion: In the 800 VDC system, AC-DC conversion (PSU), traditionally performed within server racks, is relocated to a dedicated power rack.　　• Essential Role of SiC and GaN: Wide bandgap devices are critical for achieving efficient performance. With AC-DC conversion moved outside the IT rack, higher-density configurations inside the IT rack can better support GPU integration.　　• Optimized Conversion Topologies: Each conversion stage—from AC to 800 VDC in the power rack and from 800 VDC to lower voltages in the IT rack—requires specialized solutions. ROHM’s SiC and GaN devices contribute to higher efficiency and reduced noise while decreasing the size of peripheral components, significantly increasing power density.　　• Breakthrough Device Technologies: ROHM’s EcoSiC™ series offers industry-leading low on-resistance and top-side cooling modules ideal for AI servers, while the EcoGaN™ series combines GaN performance with proprietary analog IC technologies, including Nano Pulse Control™.　This allows for stable gate drive, ultra-fast control, and high-frequency operation–features that have earned strong market recognition.　　The shift to 800 VDC infrastructure is a collective industry effort. ROHM is working closely with NVIDIA, data center operators, and power system designers to deliver essential wide bandgap semiconductor technologies for next-generation AI infrastructure. Through strategic collaborations, including a 2022 partnership with Delta Electronics, ROHM continues to drive innovation in SiC and GaN power devices, enabling powerful, sustainable, and energy-efficient data center solutions.　　ROHM’s EcoSiC™　　EcoSiC™ is ROHM’s brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　・EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.

Key word：

ROHM

Release time：2025-10-15 11:50 reading：494 Continue reading>>

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ROHM and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers

　　ROHM and Infineon Technologies AG have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems, and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both ROHM and Infineon. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.　　"We are excited about working with ROHM to further accelerate the establishment of SiC power devices," said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. "Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization."　　"ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon constitutes a significant step towards the realization of this goal, since it broadens the portfolio of solutions," said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, in charge of Power Devices Business at ROHM. "By working together, we can drive innovation, reduce complexity, and increase customer satisfaction, ultimately shaping the future of the power electronics industry."Dr. Peter Wawer, Division President Green Industrial Power at Infineon (left)and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM　　As part of the agreement, ROHM will adopt Infineon’s innovative top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon's top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.　　At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM's advanced DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247.　　ROHM and Infineon plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This will further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.　　Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using ROHM’s and Infineon’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.　　About ROHM　　ROHM, a leading semiconductor and electronic component manufacturer, was established in 1958. From the automotive and industrial equipment markets to the consumer and communication sectors, ROHM supplies ICs, discretes, and electronic components featuring superior quality and reliability through a global sales and development network. Our strengths in the analog and power markets allow us to propose optimized solutions for entire systems that combine peripheral components (i.e., transistors, diodes, resistors) with the latest SiC power devices as well as drive ICs that maximize their performance.　　Further information is available at https://www.rohm.com　　About Infineon　　Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company has around 58,060 employees worldwide and generated revenue of about €15 billion in the 2024 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).

Key word：

ROHM

Release time：2025-09-29 14:53 reading：495 Continue reading>>

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Renesas Adds Capacitive Touch to Ultra-Low-Power RA0 MCUs

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RA0L1 microcontroller (MCU) Group based on the Arm® Cortex®-M23 processor. The new devices offer extremely low power consumption and the industry’s best solution for quickly and economically implementing capacitive touch in battery-powered and other consumer electronics, appliances, white goods and industrial system controls.　　Renesas introduced the RA0 MCU series in 2024 and it has quickly become very popular with a wide range of customers due to its affordability and low power consumption. With the addition of capacitive touch functionality, RA0L1 devices offer designers the ability to create responsive, attractive, low-power user interfaces at very low cost.　　RA0L1 MCUs deliver industry-leading power consumption of only 2.9mA current in active mode, and 0.92mA in sleep mode. In addition, an integrated High-speed On-Chip Oscillator (HOCO) enables the fastest wake-up time for this class of microcontroller. The fast wake-up enables the RA0L1 MCUs to stay in Software Standby mode more of the time, where power consumption drops to a minuscule 0.25 µA. With this feature, current consumption can be reduced by up to 90 percent compared with other solutions.　　Feature Set Optimized for Low Cost　　The RA0L1 devices have a feature set optimized for cost-sensitive applications. They offer a wide operating voltage range of 1.6V to 5.5V so customers don’t need a level shifter/regulator in 5V systems. The RA0L1 MCUs also integrate multiple communications interfaces, analog functions, safety functions and security functionality to reduce customer BOM cost. A wide range of packaging options is also available, including a tiny 4mm x 4mm 24-pin QFN.　　In addition, the new MCU’s high-precision (±1.0%) HOCO improves baud rate accuracy and enables designers to forego a standalone oscillator. Unlike other HOCOs in the industry, it maintains this precision in environments from -40°C to 125°C. This wide temperature range enables customers to simplify thermal design by avoiding costly and time-consuming “trimming,” even after the reflow process.　　Renesas Capacitive Touch Leadership　　Renesas provides industry-leading capacitive touch technology, ensuring customers can quickly and cost-effectively implement high-quality touch interfaces in a variety of systems. Its self-capacitance method simplifies waterproof design, offering simpler design and reduced complexity compared to mutual capacitance solutions. Renesas’ multi-frequency measurement meets IEC61000 4-3 Level 4 standards, making it ideal for medical applications that demand robust protection from electromagnetic interference. Renesas also offers specialized development resources for capacitive touch, including the QE for Capacitive Touch that streamlines sensitivity adjustments for capacitive touch buttons, speeding up development.　　“The RA0L1 combines the industry-leading power consumption and cost-effectiveness of our RA0 Series MCUs with our unmatched capacitive touch technology and tools,” said Daryl Khoo, Vice President of the Embedded Processing Marketing Division at Renesas. “We look forward to the many innovative touch interface solutions that our customers will create using these devices.”　　Key Features of the RA0L1 Group MCUs　　Core: 32MHz Arm Cortex-M23　　Memory: Up to 64KB integrated Code Flash memory and 16KB SRAM　　Extended Temperature Range: Ta -40°C to 125°C　　Timers: Timer array unit (16b x 8 channels), 32-bit interval timer (8b x 4 channels), RTC　　Communications Peripherals: 3 UARTs, 2 Async UART, 6 Simplified SPIs, 2 I2C, 6 Simplified I2Cs　　Analog Peripherals: 12-bit ADC, temperature sensor, internal reference voltage　　HMI: Capacitive Touch (up to 24 channels), Controlled Current Drive Port (up to 8)　　Safety: SRAM parity check, invalid memory access detection, frequency detection, A/D test, output level detection, CRC calculator, register write protection　　Security: Unique ID, TRNG, Flash access window, Flash read protection　　Packages: 24-, 32- and 48-pin QFNs, 32-, 48-pin LQFP, 20-pin LSSOP　　The new RA0L1 Group MCUs are supported by Renesas’ Flexible Software Package (FSP). The FSP enables faster application development by providing all the infrastructure software needed, including multiple RTOS, BSP, peripheral drivers, middleware, connectivity, networking, and security stacks as well as reference software to build complex AI, motor control and cloud solutions. It allows customers to integrate their own legacy code and choice of RTOS with FSP, thus providing full flexibility in application development. Using the FSP will ease migration to and from other RA family devices.　　Winning Combinations　　Renesas has combined the new RA0L1 Group MCUs with numerous compatible devices from its portfolio to offer a wide array of Winning Combinations, including the Capacitive Touch Remote Controller. Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly.　　Availability　　The RA0L1 Group MCUs are available now, along with the FSP software, the RA0L1 Fast Prototyping Board and the RA0L1 Renesas Solution Starter Kit for Cap Touch. Samples and kits can be ordered either on the Renesas website or through AMEYA360.

Key word：

Renesas

Release time：2025-09-18 16:11 reading：591 Continue reading>>

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Murata Launches Digital Output SMD Pyroelectric Infrared Sensor for Low Power Applications

　　Murata Manufacturing Co., Ltd has launched a digital output SMD pyroelectric infrared sensor, IRS-D200ST00R1, with low power consumption and is already in mass production.　　In recent years, the use of IoT technology in smart homes and smart buildings has increased convenience, safety, and power saving within living spaces and facilities. Because of this, the demand for wireless communication units equipped with human detection functions capable of sensing movement in real time is also increasing to realize more efficient and comfortable environments. One of the key technologies to enable the motion detection function is a pyroelectric infrared sensor. Products which communicate wirelessly require long-term stable operation with reduced battery replacement or charging, thus creating a strong need for pyroelectric infrared sensors that can detect human movement while extending battery life. Additionally, to increase design flexibility inside these products, space-saving measures are essential, driving demand for compact infrared sensors., space-saving measures are essential, driving demand for compact infrared sensors.　　In response, we developed this product using proprietary pyroelectric ceramic technology to achieve low power consumption and a compact size. Even when continuously operating the human detection function, power consumption is kept low, and the sensor includes an interrupt function that activates the microcontroller only when a change is detected, contributing to extended battery life. Furthermore, the compact size enables space-saving, and the adoption of the digital I2C interface simplifies design during development.　　The main features of this product include contributing to overall system power reduction through low power consumption and interrupt functionality, space-saving due to its small and low-profile SMD package, ease of design enabled by built-in amplifier and ADC with digital output (I2C), reduction of false detections and stable operation thanks to high signal-to-noise ratio and EMI noise resistance, Also enabling process cost reduction through reflow compatibility.　　Key specifications are a dual element electrode size of 0.08 × 0.02 inch (2.0 × 0.5 mm), an overall size of 0.24 × 0.24 × 0.10 inch (6.0 × 6.0 × 2.6 mm), typical sensitivity of 19.5 mV, element height of 0.065 inch (1.65 mm), field of view of ±55° horizontal and ±42° vertical, supply voltage from 1.8 to 3.3 V, typical current consumption of 8 µA, and an I2C interface.*

Key word：

Murata

Release time：2025-09-15 14:09 reading：473 Continue reading>>

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Proudly Made in India: Fibocom & Kaynes Technology Join Forces to Drive IoT Innovation, Policy Compliance, and Local Growth

　　Fibocom,a leading global provider of wireless communication modules and AI solutions,today announced a strategic manufacturing partnership with Kaynes Technology, oneof India’s foremost electronics and semiconductor manufacturing pioneers. Thiscollaboration underscores Fibocom’s commitment to India’s national initiatives,including Make in India and Atmanirbhar Bharat,while addressing the growing demand for locally produced IoT components.　　Equipped withhigh-speed SMT lines, automated testing systems, and precision assemblyequipment, the state-of-the-art facility in Karnataka, Hyderabad, and Gujaratstrengthens Fibocom’s integration into India’s dynamic manufacturing ecosystem.This initiative represents more than capacity expansion — it reflects Fibocom’svision to embrace India, grow with India, and empower the world through India.　　Strategic PolicyAlignment and Market Commitment　　Fibocom’sinvestment in local manufacturing is fully aligned with India’s industrial developmentagenda, supporting technological self-reliance, accelerating time-to-market forIndian OEMs, and delivering long-term value to both domestic and globalcustomers.　　Partnering with India’s ManufacturingLeader　　With decades ofexpertise in precision manufacturing, supply chain integration, and world-classquality systems, Kaynes Technology provides the foundation for this strategicpartnership. Together, Fibocom and Kaynes Technology are advancing India as aglobal force for next-generation connectivity solutions.　　“Kaynes Technologyis proud to join forces with Fibocom to deliver critical IoT componentsmanufactured in India,” said Raghu Panicker, CEO, Kaynes Technology.“This collaboration enables local industries to innovate faster, scale smarter,and compete more effectively on the global stage.”　　Trusted & Proudly Made in India　　Fibocom’s locallyproduced modules are designed to global standards while proudly bearing the'Made in India' mark. This not only enhances trust among Indian OEMs andgovernment stakeholders but also reinforces India’s growing reputation as areliable center for IoT innovation and exports.　　“Thispartnership is a statement of intent — Fibocom is here not just to sell, but tobuild, invest, and grow with India,” said Ragin Kallanmar Thodikai, Country SalesManager, India, Fibocom. “We are proud to contribute to afuture where intelligent connectivity is Madein India and trusted worldwide.“

Key word：

FIbocom

Release time：2025-09-02 15:36 reading：628 Continue reading>>

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ROHM at electronica India 2025: Power and Analog Devices Contributing to the Evolution of Industrial and E-Mobility applications

　　From September 17th to 19th, ROHM will exhibit at electronica India 2025, South Asia's leading trade fair for electronic components, systems, applications, and solutions, taking place at the Bangalore International Exhibition Centre (BIEC). At booth H3-E25, ROHM will showcase its latest SiC and GaN technologies, featuring reference designs and evaluation systems that address today’s power and thermal challenges in both industrial equipment and automotive drive systems. Additionally, we will also showcase analog solutions such as power ICs for industrial equipment and automotive LED drivers.　　"electronica India 2025 will be the right place to explore real-world applications powered by ROHM’s advanced power semiconductors. With our local design expertise and close cooperation with key players in the Indian market, we are uniquely positioned to support the country’s shift toward more sustainable and efficient electronics," says Makoto Terada, Managing Director, ROHM Semiconductor India.　　Highlights of ROHM’s presence at electronica India 2025 include:　　For Industrial Applications　　・Locally co-developed reference designs, as part of ROHM’s 'Made in India' initiative, emphasizing faster prototyping and region-specific design optimization, which will be unveiled for the first time.　　・A full lineup of GaN reference designs ranging from 45W to 5.5kW, including compact AC adapters, Totem Pole PFC designs, and server power supplies.　　・ROHM’s 2kV SiC MOSFETs, adopted in SEMITRANS® 20 modules by Semikron Danfoss, powering SMA Solar Technology’s Sunny Central FLEX for utility-scale PV and battery systems.　　* SEMITRANS® is a trademark or registered trademark of Semikron Danfoss Elektronik GmbH　　For Automotive and E-Mobility　　・TRCDRIVE pack™, a molded SiC module designed for the traction inverter of EVs.　　・New 2-in-1, 4-in-1 and 6-in-1 molded SiC modules for compact and cost-optimized drive solutions.　　・TO-247 discrete SiC MOSFETs shown through practical 3-phase inverter boards for affordable traction systems.　　More Information　　For additional highlights of ROHM at electronica India 2025, please visit:　　www.rohm.com/electronica-india　　ROHM’s Power Eco Family: Reliable Solutions Across a Wide range of Applications　　ROHM will also feature its Power Eco Family, a branding concept that unites its key power device lines: Each product line will be represented through live demonstrations, adoption cases, and hands-on evaluation tools available at the booth.

Key word：

ROHM

Release time：2025-09-01 15:11 reading：586 Continue reading>>

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PRI Certification, the #2 Certification Body in China, Launches IATF 16949 Services to Support Growing Automotive Industry

　　PRI Certification Expands by Adding IATF 16949 Certification Services in China and Enhances Position as One of the Top Two Chinese CBs with 18% Market Share　　PRI Certification proudly announces the official launch of IATF 16949 certification services in China. The expansion through PRI China’s Beijing office allows the organization to offer IATF 16949 services directly to the Chinese marketplace. In addition to this stronger presence in China, PRI Certification also holds the #2 market share in the United States. This dual-market leadership underscores PRI’s global credibility and trusted reputation across two of the world’s most significant manufacturing regions.　　This strategic move solidifies PRI Certification’s commitment to delivering high-quality, industry-specific certification solutions throughout Asia. While the Beijing office will serve as the local hub for client engagement and auditing, all technical and certification decisions will continue to be supported through PRI’s team in Warrendale, Pennsylvania, USA—ensuring global consistency, technical rigor, and impartial oversight.　　Over a Decade of Experience in Asia　　PRI Certification has been delivering IATF 16949 certification in Japan for over 10 years, earning a strong reputation for excellence and reliability in the region. Expanding into China is a natural progression that aligns with growing demand in the Asian automotive market.　　Expert Auditors with Deep Automotive Knowledge　　PRI’s auditors bring unmatched technical expertise and practical insight to each audit. This ensures clients receive not just compliance evaluations but also process improvements that contribute to lasting business value.　　Tailored Audits Across 30+ Industries　　PRI Certification has successfully delivered certification services across more than 30 industries worldwide. The organization’s approach to auditing is tailored to the specific needs of the automotive sector, making PRI a trusted partner for companies pursuing or maintaining IATF 16949 Certification.　　Continuing a Legacy of Quality in China　　PRI has been providing certification services in China since 2010, helping organizations achieve international quality benchmarks across a wide range of sectors. The introduction of IATF 16949 services marks a significant milestone, strengthening PRI’s ongoing commitment to the region’s automotive manufacturing excellence.

Key word：

PRI

Release time：2025-08-05 14:46 reading：575 Continue reading>>

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BIWIN Industrial-Grade TDC200 Series Storage Cards: Built for Multi-Channel 4K Surveillance

　　Designed for high-definition, multi-channel video surveillance, the BIWIN Spec TDC200 Series Industrial-Grade SD Cards & microSD Cards come equipped with various self-developed firmware algorithms featuring high-reliable design and multichannel write optimizations to achieve stable write speeds across multiple video channels. And with design upgrades in physical structure and reliability, these cards are able to support operating temperature within -25°C to 85°C, as well as more protective capabilities like water-, dust-, shock-, wear-, X-ray-resistance and anti-magnetism. They are ideal for intensive scenarios such as vehicle surveillance, security systems, industrial inspection, and medical monitoring applications.　　Reliable Multi-Channel 4K Recording，10 Channels of Continuous Recording Without Frame Drops　　The BIWIN TDC200 series SD Card & microSD Card are equipped with smart data flow technologies which help to distinguish video stream data from system data and allocate them into separate storage zones. This optimized data structure through partitioned storage assists to reduce data fragmentation and write amplification caused by garbage collection (GC) during full-drive write scenarios, so as to extend products’ lifespan. Additionally, the built-in intelligent cache management system minimizes wear from high-frequency access, ensuring stability and reliability during high-load, continuous writing scenarios. The cards support 10 channels of 4K high-definition recording equipment with 7×24-hour stable continuous writing, ensuring no frame drops or stuttering in surveillance and high-definition recording scenarios, with no frame skipping or data loss during playback.　　Adaptive Power Saving for Extended Endurance，Ideal for Demanding Industrial Tasks　　Featured with smart low-power management technology, the TDC200 Series SD Card & microSD Card automatically switches to low power mode under standby state, reducing power consumption from milliamps (mA) to microamps (μA)—a drop of up to 85% in sleep mode. With microsecond-level wake-up response, the cards are especially suited for battery-powered or energy-sensitive applications, such as body-worn cameras, portable surveillance units, and inspection devices, significantly extending device uptime in the field.　　Comprehensive Protection from the Inside Out，Engineered for Harsh Industrial Environments　　In automotive and industrial settings, storage devices must withstand shocks, drops, vibrations, and extreme temperatures. The BIWIN TDC200 Series cards feature a reinforced physical design that ensures stable performance in environments ranging from -25℃ to 85℃. They are built to resist impact, vibration, water, dust, X-rays, and magnetic interference that can lead to circuit shorts or signal loss. Tested under rigorous reliability protocols, the TDC200 achieves a Mean Time Between Failures (MTBF) of up to 3 million hours, greatly reducing the risk of downtime and lowering maintenance costs in mission-critical deployments.　　Built with 3D TLC direct write and multiple software optimization technologies, BIWIN TDC200 Series SD Card & micro SD Card include capabilities of VDT (Voltage Detection Technology), S.M.A.R.T. health monitoring, Power Loss Protection, Intelligent Thermal Throttling and advanced ECC algorithms. VDT and S.M.A.R.T. provide predictive failure analysis and real-time health feedback, while intelligent thermal throttling and data retention safeguard data integrity under high-temperature conditions. These features work together to ensure long-term stability and durability even in the most demanding industrial environments.　　Conclusion　　In application scenarios requiring high-volume, multi-channel video recording, the BIWIN TDC200 Series Industrial-Grade SD & microSD Cards deliver exceptional stability and performance. With zero frame loss and uninterrupted data streams, every critical moment is captured in full. Thanks to superior shock and vibration resistance, these cards are the ideal choice for use in dashcams, in-vehicle DVRs, body-worn cameras, panoramic cameras, smart medical devices, industrial tablets, and industrial UAVs where data integrity is paramount.

Key word：

BIWIN

Release time：2025-07-29 15:33 reading：692 Continue reading>>

model	brand	Quote
BD71847AMWV-E2	ROHM Semiconductor
CDZVT2R20B	ROHM Semiconductor
RB751G-40T2R	ROHM Semiconductor
MC33074DR2G	onsemi
TL431ACLPR	Texas Instruments

model	brand	To snap up
BU33JA2MNVX-CTL	ROHM Semiconductor
BP3621	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
ESR03EZPJ151	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
TPS63050YFFR	Texas Instruments

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