GigaDevice Launches GD25NX Series xSPI NOR Flash with Dual-Voltage Design Optimized for high-speed, low-power 1.2 V SoC applications
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GigaDevice Launches GD25NX Series xSPI NOR Flash with Dual-Voltage Design Optimized for high-speed, low-power 1.2 V SoC applications

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today announced the launch of its new generation of high-performance dual-voltage xSPI NOR Flash products – the GD25NX series. Featuring a 1.8 V core and 1.2 V I/O design, the GD25NX series connects directly to 1.2 V system on chips (SoCs) without an external booster circuit, significantly reducing system power consumption and BOM cost.　　Building on the success of the 1.2 V I/O GD25NF and GD25NE series, the new GD25NX further extends GigaDevice's expertise in dual-voltage Flash design. With high-speed data transfer performance and outstanding reliability, the GD25NX series is ideal for demanding applications such as wearables, data centers, edge AI, and automotive electronics that require exceptional stability, responsiveness, and power efficiency.　　The GD25NX xSPI NOR Flash supports an octal SPI interface with a maximum clock frequency of 200 MHz in both single transfer rate (STR) and double transfer rate (DTR) modes, delivering data throughput of up to 400 MB/s. It achieves a typical page program time of 0.12 ms and a sector erase time of 27 ms, offering 30% faster programming speed and 10% shorter erase time compared with conventional 1.8 V octal Flash products.　　To safeguard data reliability, the GD25NX series integrates error correction code (ECC) algorithms and cyclic redundancy check (CRC) verification to enhance data integrity and extend product lifespan. In addition, the series supports a data strobe (DQS) functionality to ensure signal integrity in high-speed system designs, meeting the stringent data transfer stability requirements of SoCs use on data center and automotive applications.　　Built on an innovative 1.2 V I/O architecture, the GD25NX series delivers outstanding performance while maintaining exceptional power efficiency. At a frequency of 200 MHz, the device achieves read currents as low as 16 mA in Octal I/O STR mode and 24 mA in Octal I/O DTR mode. Compared with the conventional 1.8 V Octal I/O SPI NOR Flash devices, the 1.2 V I/O design reduces read power consumption by up to 50%, significantly improving system energy efficiency while sustaining high-speed operation—an ideal choice for power-sensitive applications.　　"The GD25NX series sets a new benchmark for combining low voltage with high performance in SPI NOR Flash," stated by Ruwei Su, GigaDevice Vice President and General Manager of Flash BU. "Its design aligns closely with mainstream SoC requirements for low-voltage interfaces, enabling higher integration and lower BOM costs for customers. Moving forward, GigaDevice will continue to expand its dual-voltage portfolio with broader density and package options to help customers build the next generation of efficient and reliable low-power storage solutions."　　The GD25NX series is available in 64 Mb and 128 Mb densities, meeting diverse storage needs across various applications. These devices are supported on TFBGA24 8×6 mm (5×5 ball array) and WLCSP (4×6 ball array) packages. Samples of the 128 Mb GD25NX128J are now available for customer evaluation, while the 64 Mb GD25NX64J samples are currently being prepared. For detailed technical information or pricing inquiries, please contact your local authorized GigaDevice sales representative.
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Release time：2025-12-15 15:57 reading：254 Continue reading>>
Renesas Releases its First Wi-Fi 6 and Wi-Fi/Bluetooth LE Combo MCUs for IoT and Connected Home Applications
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Renesas Releases its First Wi-Fi 6 and Wi-Fi/Bluetooth LE Combo MCUs for IoT and Connected Home Applications

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RA6W1 dual-band Wi-Fi 6 wireless microcontroller (MCU), along with the RA6W2 MCU that integrates both Wi-Fi 6 and Bluetooth® Low Energy (LE) technologies. These connectivity devices address the growing demand for always-connected, ultra-low-power IoT devices across smart home, industrial, medical and consumer applications. Renesas also launched fully integrated modules that accelerate development with built-in antennas, wireless protocol stacks, and pre-validated RF connectivity.　　Ultra Low Power Operation for Always-Connected IoT　　Today’s IoT devices must stay always connected to improve application usability and response time, while maintaining the lowest possible power consumption to extend battery life or to meet eco-friendly regulations. Renesas’ Wi-Fi 6 MCUs offer features such as Target Wake Time (TWT), which enables extended sleep times without compromising cloud connectivity and power consumption. This is critical for applications such as environmental sensors, smart locks, thermostats, surveillance cameras, and medical monitors, where real-time control, remote diagnostics and over-the-air (OTA) updates are critical.　　Additionally, both MCU Groups are optimized for ultra-low power consumption, consuming as little as 200nA to 4µA in sleep mode and under 50µA in Delivery Traffic Indication Message (DTIM10). With the “sleepy connected” Wi-Fi functionality, these devices stay connected with minimal power draw, meeting the growing requirements of modern energy efficiency standards.　　Scalable RA MCU Architecture with Full Software Support　　Built on the Arm® Cortex®-M33 CPU core running at 160 MHz with 704 KB of SRAM, the MCUs enable engineers to develop cost-effective, standalone IoT applications using integrated communication interfaces and analog peripherals, without the need for an external MCU. Customers also have the option to design with a host MCU that can be selected from Renesas’ broad RA MCU offerings and attach the RA6W1 and RA6W2 as connectivity and networking add-ons. Both RA6W1 and RA6W2 are designed to work with Renesas’ Flexible Software Package (FSP) and e² studio integrated development environment. As the first Wi-Fi MCUs in the RA portfolio, they offer a scalable platform that supports seamless software reuse across the RA family.　　High Performance Dual-Band Wi-Fi 6 with 2.4 and 5 GHz Connectivity　　With support for both 2.4 and 5 GHz bands, both MCUs deliver superior throughput, low latency, and reduced power consumption. The dual-band capability dynamically selects the most suitable band based on real-time conditions, ensuring a stable and high-speed connection even in environments with many connected devices. Advanced features such as Orthogonal Frequency Division Multiple Access (OFDMA) and TWT boost performance and energy efficiency, making these solutions well suited for dense urban environments and battery-powered devices.　　Robust Security and Matter-Certified Interoperability　　The RA6W1 and RA6W2 devices offer advanced built-in security including AES-256 encryption, secure boot, key storage, TRNG, and XiP with on-the-fly decryption to keep data safe from unauthorized access. The RA6W1 is RED certified (Radio Equipment Directive), which makes it easier for developers to future-proof their design. Additionally, the device is Matter ready and certified with Matter 1.4, and is compatible across smart home platforms. Renesas supports both MCUs and modules through the Renesas Product Longevity Program, offering 15-year support for MCUs and 10 years for modules.　　“We’re offering our customers the flexibility to design with a standalone Wi-Fi device, a Wi-Fi/Bluetooth LE combo, or fully integrated modules depending on their needs,” said Chandana Pairla, VP of the Connectivity Solutions Division at Renesas. “These wireless solutions save power, simplify system design and lower BOM cost. With hosted or hostless implementation options, customers can confidently begin their wireless onboarding journey and seamlessly integrate into next-generation connected systems.”　　Two types of modules, Wi-Fi 6 (RRQ61001) and Wi-Fi/Bluetooth LE combo (RRQ61051) simplify design by integrating certified RF components and wireless connectivity stacks that comply with global network standards. Supported RF certification standards include the U.S. (FCC), Canada (IC), Brazil (ANATEL), Europe (CE/RED), UK (UKCA), Japan (Telec), South Korea (KCC), China (SRRC) and Taiwan (NCC). By integrating connectivity at the system level, the modules significantly reduce design effort and accelerate time to market.　　Winning Combinations　　Renesas offers “Advanced Low-Power Wireless HMI for Household Appliances” and “Automatic Pet Door & Tracking System” that combine the new Wi-Fi 6 MCU and Wi-Fi/Bluetooth LE MCU with numerous compatible devices from its portfolio to offer a wide array of Winning Combinations. Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.　　Availability　　The RA6W1 MCU is now available in FCQFN and WLCSP packages, along with the RRQ61001 and RRQ61051 modules. The RA6W2 MCU (BGA package) will be available in Q1/2026. The devices are supported by the FSP, e² studio, evaluation kit and software development kit (SDK) that include flash memory, PCB trace antennas, connectors and embedded power profiler for power consumption analysis. Renesas also offers comprehensive software tools to aid system application development, as well as the Production Line Tool (PLT) for production testing of wireless MCUs.
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Release time：2025-12-12 16:28 reading：279 Continue reading>>
ROHM launches SiC MOSFETs in TOLL package that achieves both miniaturization and high-power capability
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ROHM launches SiC MOSFETs in TOLL package that achieves both miniaturization and high-power capability

　　ROHM has begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these new packages offer approximately 39% improved thermal performance. This enables high-power handling despite their compact size and low profile. It is ideal for industrial equipment such as server power supplies and ESS (Energy Storage Systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design.　　In applications like AI servers and compact PV inverters, the trend toward higher power ratings is occurring simultaneously with the contradictory demand for miniaturization, requiring power MOSFETs to achieve higher power density. Particularly in totem pole PFC circuits for slim power supplies, often called “the pizza box type,” stringent requirements demand thicknesses of 4mm or less for discrete semiconductors.　　ROHM's new product addresses these needs by reducing component footprint by approximately 26% and achieving a low profile of 2.3mm thickness – roughly half that of conventional packaged products. Furthermore, while most standard TOLL package products are limited by a drain-source rated voltage of 650V, ROHM's new products support up to 750V. This allows for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses.　　The lineup consists of six models with on-resistance ranging from 13mΩ to 65mΩ, with mass production started in September 2025 (sample price: $37.0/unit, tax excluded). 　　Product Lineup　　Application Examples　　・Industrial equipment: Power supplies for AI servers and data centers, PV inverters, ESS (energy storage systems)　　・Consumer equipment: General power supplies　　EcoSiC™ Brand　　EcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.• EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　Totem Pole PFC Circuit　　A highly efficient power factor correction circuit configuration that reduces diode losses by using MOSFETs as rectifier elements. The adoption of SiC MOSFETs enables high voltage withstand capability, high efficiency, and high-temperature operation for the power supply.
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Release time：2025-12-04 17:10 reading：341 Continue reading>>
ROHM launches RPR-0730: High-Speed, High-Precision Optical Sensor Featuring VCSEL Technology
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ROHM launches RPR-0730: High-Speed, High-Precision Optical Sensor Featuring VCSEL Technology

　　ROHM has developed the “RPR-0730”, analog compact optical sensor, capable of high-precision detection of fast-moving objects. This sensor can be widely utilized in consumer and industrial equipment applications, including printers and conveyor systems.　　As industrial and office equipment becomes increasingly sophisticated and automated, there is a growing demand for improved sensing technology accuracy. In applications such as label printers, material or product transport systems, and copiers, the need for technology that can identify objects more accurately is essential. Moreover, increased speed driven by productivity improvements makes the introduction of high-speed, high-precision optical sensors crucial.　　The RPR-0730 is a compact reflective optical sensor (photo reflector). It employs an infrared VCSEL, which offers higher directionality than LEDs, enabling detection of finer objects. Furthermore, by using a phototransistor with analog output as the receiver, the sensor achieves a response time of 10µs. This dual combination enables high-speed, accurate identification of fine lines as narrow as 0.1mm - previously difficult to detect with conventional LED light sources. As an addition to the existing digital output sensor “RPR-0720” series, RPR-0730 expands capability to applications requiring faster sensing, such as print detection in copiers, label printers, or rotational detection in motors and gears.　　The package is ultra-compact at 2.0mm × 1.0mm × 0.55mm and employs a visible light filtering resin to suppress interference from ambient light or sunlight. This enables stable detection even in environments with varying light conditions, such as factories or outdoors. The sensor can also be easily integrated into equipment requiring installation in small, confined spaces, like inside conveyors or precision instruments, making it suitable for a wider range of applications.　　Mass production of the new product commenced in October 2025 (sample price: $2.2/unit, tax excluded).　　Going forward, ROHM will continue to leverage its development expertise in light-emitting and light-receiving elements to create sensing products that meet customer needs, contributing to the miniaturization and enhanced convenience of various devices.　　Application Examples　　•Print detection, paper feed/jam detection in label printers, copiers, shredders, etc.　　•Object detection of packages/specimens, workpiece position detection in conveyance systems, automatic inspection equipment, etc.　　•Motor/gear rotational detection in industrial robots, etc.　　Terminology　　Photo reflector　　A type of optical sensor combining an emitting element and a receiving element. It illuminates an object and detects the intensity of the reflected light to measure the presence or distance of an object.　　VCSELL　　Abbreviation for Vertical Cavity Surface Emitting LASER. A type of laser light source, it is a semiconductor laser that can emit light directly from its surface. Compared to LEDs, it offers higher directionality and is suitable for high-precision sensing. Originally adopted for optical communication applications, its use as a light source for proximity sensors and distance sensors has been expanding in recent years.　　Phototransistor　　A transistor-type photoelectric conversion element that converts optical signals into electrical signals. It integrates a photodiode and a transistor, controlling the base current with light to output an amplified collector current.
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Release time：2025-12-04 17:04 reading：312 Continue reading>>
Panasonic Industry Commercializes Conductive Polymer Tantalum Solid Capacitors (POS<span style='color:red'>CA</span>P) with The Industry's Lowest Profile*1 to Support High-Output Power Delivery Required for USB Type-C Connections
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Panasonic Industry Commercializes Conductive Polymer Tantalum Solid Capacitors (POSCAP) with The Industry's Lowest Profile*1 to Support High-Output Power Delivery Required for USB Type-C Connections

　　Panasonic Industry Co., Ltd., a Panasonic Group company, announced  that it will begin commercial production of its two models of Conductive Polymer Tantalum Solid Capacitors (POSCAP), 50TQT33M and 63TQT22M. These capacitors are incorporated into power circuits used for information and communication equipment, including laptops and tablets. They offer an ultra-high withstand voltage and high capacitance in a body with the industry’s lowest profile of 3 mm, supporting high-output power delivery through USB Type-C connectors. Mass production for these models is planned to start in December 2025.　　These capacitors are ideal for voltage stabilization and noise reduction in power supplies compliant with USB Power Delivery (USB-PD)[1] 3.1. While previous USB-C connectors supplied up to 100 W (20 V/5 A), USB-PD 3.1 expands this to 240 W (48 V/5 A). This enables widespread use of USB-C connectors for high-speed data transfer and rapid charging, and is expected to further expand applications to larger equipment requiring high power output, such as displays.　　On the other hand, information and communication equipment such as laptops are increasingly required to be thinner and more compact. Capacitors therefore must combine an ultra-high withstand voltage, high capacitance, and a low profile in order to fit into limited space. Panasonic Industry began mass production of Conductive Polymer Tantalum Solid Capacitors (POSCAP) in 1997 and, as an industry leader, has continuously delivered first-of-their-kind products. Leveraging proprietary powder molding technology and film formation technologies, the company has newly developed two models that achieve both an ultra-high withstand voltage and high capacitance in a package with the industry's lowest profile of 3 mm.　　Through these unique device technologies, Panasonic Industry will continue to contribute to enhancing the functionality of electronic equipment, including laptops, while also reducing the environmental impact through smaller, lighter devices and lower material usage.　　Key features:　　1. Achieves both an ultra-high withstand voltage and high capacitance*2 to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry*1—enabled by proprietary powder molding and film formation technologies　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　*1 As of September 18, 2025, Conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V and capacitance of 22 μF or higher (Panasonic Industry data)　　*2 USB-Power Delivery 3.1 (180 W/240 W output) compliant high-capacitance conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V, and a capacitance of 22 μF or higherDetailed features:　　1. Achieves both an ultra-high withstand voltage and high capacitance to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry—enabled by proprietary powder molding and film formation technologies　　To achieve capacitor performance required for USB-PD 3.1 power supplies in a low-profile body, both high capacitance and a high withstand voltage must be ensured, despite their trade-off relationship. High-capacitance tantalum powder is necessary for electrode materials, but its fine particle size makes molding difficult, creating challenges for stable production. Forming a uniform dielectric film on the surface of the electrodes is important for enhancing the withstand voltage. However, since electrodes made with high-capacitance tantalum powder contain extremely small internal pores, dielectric oxide films tend to develop imperfections.　　Panasonic Industry overcame these challenges by establishing proprietary technology to mold high-capacitance tantalum powder with uniform density, and by optimizing the film deposition process to create flawless dielectric films. This enabled the development of two new models that combine an ultra-high withstand voltage and high capacitance, meeting the USB-C high-output power delivery requirements in a 3 mm low-profile package.Cross-sectional view of POSCAP and enlarged view of the inside of the electrode body　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　Until now, Panasonic Industry’s POSCAP lineup extended only up to 35 V, with no models compatible with USB-PD 3.1, which extends the rated voltage specification to 36 V (180 W) and 48 V (240 W). The two new models, rated at 50 V and 63 V, each achieve a high capacitance of 22 μF or higher in a package with the industry's lowest profile of 3 mm. The full lineup provides flexibility to meet diverse applications and equipment specifications.　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　Compared to the industry standard size*3, the new models reduce volume by 25%, contributing to a lower environmental impact through reduced material usage.　　*3 Comparison with the industry standard size (7.3 mm × 4.3 mm × 4 mm) of conductive polymer tantalum solid capacitors used in USB-PD 3.1 compliant power suppliesApplications:　　Voltage stabilization and noise reduction of USB-PD 3.1-compliant power supplies for laptops, displays, and peripheral equipment　　Arc discharge[2] countermeasures for USB-PD 3.1-compliant connectors　　Specifications:　　Life: 2,000 hours at 105°C; guaranteed operating temperature range: -55°C to 105°C　　Ripple current[3]: 100 kHz, 105°C　　ESR[4]: 100 kHz, 20°C　　*4 Product dimensional tolerance:　　Length (L): ±0.3 mm; Width (W): ±0.2 mm; Height (H): ±0.2 mmTerm descriptions:　　[1] USB-PD　　The power delivery standards established by the standard-setting organization USB Implementers Forum, Inc. (USB-IF). With the launch of USB-PD 3.1 in 2021, USB Type-C cables and connectors can now deliver up to 240 W of power, supporting a wide range of applications—from smartphones and laptops to larger equipment such as monitors.　　[2] Arc discharge　　An electric spark or discharge phenomenon that occurs when a high current flows at low voltage in electrical circuits.　　[3] Ripple current　　When a voltage fluctuation is applied to a capacitor, a corresponding charging or discharging current flows through the capacitor. The current applied to this capacitor is referred to as a ripple current. The higher the ripple current, the higher the allowable current.　　[4] ESR (Equivalent Series Resistance)　　Represents the value of an internal resistance component that can cause heat generation. Capacitors with lower ESR allow higher ripple currents and provide excellent noise absorption.
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Release time：2025-11-06 15:35 reading：570 Continue reading>>
GigaDevice GD32F5xx and GD32G5xx Software Test Libraries (STL) Receive TÜV Rheinland IEC 61508 Functional Safety Certification
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GigaDevice GD32F5xx and GD32G5xx Software Test Libraries (STL) Receive TÜV Rheinland IEC 61508 Functional Safety Certification

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, announced that its GD32F5xx and GD32G5xx Software Test Libraries have received IEC 61508 SC3 (SIL 2/SIL 3) functional safety certification from TÜV Rheinland.　　This milestone expands GigaDevice’s functional safety portfolio, which already includes the GD32H7 and GD32F30x STLs, and now covers a broad range of MCUs with Arm® Cortex®-M7, Cortex®-M4, and Cortex®-M33 cores. Building on this foundation, GigaDevice will continue to deliver high-performance and safety-focused hardware and software solutions for key applications such as industrial control, energy and power, and humanoid robotics.　　With the growing emphasis on safety across industries like industrial automation, functional safety has become a critical consideration in embedded system design. The GD32F5xx and GD32G5xx MCUs, based on the Arm® Cortex®-M33 core, have become key solutions for high-performance applications requiring robust safety measures.　　The GD32F5xx series is optimized for applications in energy and power management, photovoltaic energy storage, and industrial automation, where high precision and reliable control are essential.　　The GD32G5xx series combines excellent processing performance with a wide range of digital and analog interfaces. It is available in compact packages such as 81-pin WLCSP81 (4x4mm), making it ideal for applications in humanoid robotics, digital power systems, charging stations, energy storage inverters, servo motors, and optical communications.　　The GigaDevice STLs monitor GD32F5xx and GD32G5xx MCU modules in real-time to detect hardware faults. If a fault is detected, predefined safety mechanisms will be triggered to ensure the MCU always remains in a safe state, reducing potential risks and enhancing system reliability.　　This certification highlights GigaDevice's deep expertise in functional safety system design and its commitment to meeting the highest international safety standards, reinforcing its position as a trusted provider of secure, high-performance solutions for mission-critical industries.　　About GigaDevice　　GigaDevice Semiconductor Inc. is a global leading fabless supplier. Founded in April 2005, the company has continuously expanded its international footprint and established its global headquarters in Singapore in 2025. Today, GigaDevice operates branch offices across numerous countries and regions, providing localized support at customers' fingertips. Committed to building a complete ecosystem with major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety product certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management.
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Release time：2025-11-04 17:01 reading：653 Continue reading>>
GigaDevice Deepens Commitment to Japan, Advancing Local Services and Global Collaboration
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GigaDevice Deepens Commitment to Japan, Advancing Local Services and Global Collaboration

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, has officially opened its new office in Minato City, Tokyo. This milestone reflects the company's deepening commitment to the Japanese market and marks a significant step in enhancing local customer support, strengthening regional collaboration, and advancing its global development efforts.　　Japan has long served as a vital pillar of GigaDevice's global strategy. Over the years, the company has expanded its local team, refined operation to meet evolving customer needs, and established a responsive professional service system. This new office will further enhance GigaDevice's technical responsiveness and agility, foster closer collaboration with customers, and help accelerate product validation and commercialization in today's fast-changing market landscape.　　Working closely with customers in Japan, GigaDevice has broadened the adoption of its solutions across key application sectors such as industrial, automotive, consumer electronics, and the Internet of Things. At the same time, the company continues to deepen cooperation with local partners in supply chain integration and ecosystem development, offering a comprehensive portfolio of Flash memory, MCU, sensor, and analog solutions that have earned broad market recognition.　　"Japan has always been a vital component of our global strategy," said Jennifer Zhao, GigaDevice Global Business CEO. "We will continue to leverage our global synergy and strengthen local service capabilities to drive product innovation and industry advancement alongside our customers and partners."　　"We greatly value the trust and long-term partnerships we have built with our customers in Japan," added Sam Li, GigaDevice Japan Regional GM, "In a market that's becoming increasingly complex, our goal is to consistently deliver exceptional service and competitive products that meet diverse business needs and create lasting value."　　As one of GigaDevice's key customers, Nidec Corporation has been working closely with the company. Ryuji Omura, Head of Nidec Semiconductor Solutions Center, commented: "GigaDevice's rapid growth and technological innovation, along with its genuine commitment to customers, have built a solid foundation of trust between our companies and made it one of our most valued supplier partners. We look forward to seeing GigaDevice continue to lead the semiconductor industry and contribute to the advancement of society."　　As a global leading fabless supplier, GigaDevice continues to combine global synergy with localized execution. Following the establishment of its global headquarters in Singapore, the company has strengthened its presence across Asia, Europe, and the Americas, building a responsive, demand-driven sales and service network. Looking ahead, GigaDevice will continue to invest in Japan, refining its product offerings, enhancing its service delivery, and expanding its collaborative mechanisms to drive a smarter, more efficient, and sustainable future together with its customers and partners.
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Release time：2025-10-21 16:49 reading：674 Continue reading>>
TAIYO YUDEN Commercializes 1005M-Size Embeddable Multilayer Ceramic Capacitor with 22-μF Capacitance for AI Servers
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TAIYO YUDEN Commercializes 1005M-Size Embeddable Multilayer Ceramic Capacitor with 22-μF Capacitance for AI Servers

　　TAIYO YUDEN CO., LTD. has commercialized and begun mass production of embeddable multilayer ceramic capacitor (MLCC) that achieves a capacitance of 22-μF in a 1005M size (1.0 x 0.5 mm).　　This ceramic capacitor is an MLCC designed for decoupling applications on IC power lines used in AI servers and other types of information devices.　　Components embedded in a board require high precision in terms of flatness of the external electrodes for connection to the circuit. With respect to this requirement, TAIYO YUDEN has commercialized an embeddable MLCC that achieves a 22-μF capacitance in a 1005M size by enhancing external electrode formation technology and other elemental technologies.　　Mass production of the capacitor began at our Tamamura Plant (Sawa District, Gunma Prefecture) in August 2025. Samples are available for 20 yen per unit.　　Technology Background　　AI servers and other types of devices with advanced information processing capabilities are equipped with ICs that consume extremely large amounts of power. For decoupling purposes in such power supply circuits, small, high-capacity MLCCs are required to handle large currents.　　Additionally, to minimize circuit loss and noise, it is important to route the power supply circuit close to the ICs. Traditional power supply circuits are routed around ICs. But, technological developments are progressing, allowing them to be placed closer, such as on the back of the board or directly under the ICs. Thus, embeddable MLCCs need to be equipped with high-precision external electrodes to connect to the lines.　　To satisfy this need, TAIYO YUDEN has improved its external electrode formation technology and commercialized 1005M-size embeddable MLCC with a capacitance of 22 μF.　　TAIYO YUDEN is continuing to develop new MLCCs with higher capacitance and other distinguishing features.　　■ Application　　Decoupling applications on IC power lines used in AI servers and other types of information devices
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Release time：2025-10-20 16:40 reading：472 Continue reading>>
ROHM Publishes White Paper on Power Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale AI Infrastructure
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ROHM Publishes White Paper on Power Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale AI Infrastructure

　　ROHM has released a new white paper detailing advanced power solutions for AI data centers based on the novel 800 VDC architecture, reinforcing its role as a key semiconductor industry player in driving system innovation.　　As part of the collaboration announced in June 2025, the white paper outlines optimal power strategies that support large-scale 800 VDC power distribution across AI infrastructure.　　The 800 VDC architecture represents a highly efficient, scalable power delivery system poised to transform data center design by enabling gigawatt-scale AI factories. ROHM offers a broad portfolio of power devices, including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), and is among the few companies globally with the technological expertise to develop analog ICs (control and power ICs) capable of maximizing device performance.　　Included in the white paper are ROHM’s comprehensive power solutions spanning a wide range of power devices and analog IC technologies, supported by thermal design simulations, board-level design strategies, and real-world implementation examples.　　[Access the white paper here]　　Key Highlights of the White Paper• Rising Rack Power Consumption: Power demand per rack in AI data centers is rapidly increasing, pushing conventional 48V/12V DC power supply systems to their limits.　　• Shift to 800 VDC: Transitioning to an 800 VDC architecture significantly enhances data center efficiency, power density, and sustainability.　　• Redefined Power Conversion: In the 800 VDC system, AC-DC conversion (PSU), traditionally performed within server racks, is relocated to a dedicated power rack.　　• Essential Role of SiC and GaN: Wide bandgap devices are critical for achieving efficient performance. With AC-DC conversion moved outside the IT rack, higher-density configurations inside the IT rack can better support GPU integration.　　• Optimized Conversion Topologies: Each conversion stage—from AC to 800 VDC in the power rack and from 800 VDC to lower voltages in the IT rack—requires specialized solutions. ROHM’s SiC and GaN devices contribute to higher efficiency and reduced noise while decreasing the size of peripheral components, significantly increasing power density.　　• Breakthrough Device Technologies: ROHM’s EcoSiC™ series offers industry-leading low on-resistance and top-side cooling modules ideal for AI servers, while the EcoGaN™ series combines GaN performance with proprietary analog IC technologies, including Nano Pulse Control™.　This allows for stable gate drive, ultra-fast control, and high-frequency operation–features that have earned strong market recognition.　　The shift to 800 VDC infrastructure is a collective industry effort. ROHM is working closely with NVIDIA, data center operators, and power system designers to deliver essential wide bandgap semiconductor technologies for next-generation AI infrastructure. Through strategic collaborations, including a 2022 partnership with Delta Electronics, ROHM continues to drive innovation in SiC and GaN power devices, enabling powerful, sustainable, and energy-efficient data center solutions.　　ROHM’s EcoSiC™　　EcoSiC™ is ROHM’s brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　・EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.
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Release time：2025-10-15 11:50 reading：687 Continue reading>>
ROHM and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers
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ROHM and Infineon collaborate on silicon carbide power electronics packages to enhance flexibility for customers

　　ROHM and Infineon Technologies AG have signed a Memorandum of Understanding to collaborate on packages for silicon carbide (SiC) power semiconductors used in applications such as on-board chargers, photovoltaics, energy storage systems, and AI data centers. Specifically, the partners aim to enable each other as second sources of selected packages for SiC power devices, a move which will increase design and procurement flexibility for their customers. In the future, customers will be able to source devices with compatible housings from both ROHM and Infineon. The collaboration will ensure seamless compatibility and interchangeability to match specific customer needs.　　"We are excited about working with ROHM to further accelerate the establishment of SiC power devices," said Dr. Peter Wawer, Division President Green Industrial Power at Infineon. "Our collaboration will provide customers with a wider range of options and greater flexibility in their design and procurement processes, enabling them to develop more energy-efficient applications that will further drive decarbonization."　　"ROHM is committed to providing customers with the best possible solutions. Our collaboration with Infineon constitutes a significant step towards the realization of this goal, since it broadens the portfolio of solutions," said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, in charge of Power Devices Business at ROHM. "By working together, we can drive innovation, reduce complexity, and increase customer satisfaction, ultimately shaping the future of the power electronics industry."Dr. Peter Wawer, Division President Green Industrial Power at Infineon (left)and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM　　As part of the agreement, ROHM will adopt Infineon’s innovative top-side cooling platform for SiC, including TOLT, D-DPAK, Q-DPAK, Q-DPAK dual, and H-DPAK packages. Infineon's top-side cooling platform offers several benefits, including a standardized height of 2.3 mm for all packages. This facilitates designs and reduces system costs for cooling, while also enabling better board space utilization and up to two times more power density.　　At the same time, Infineon will take on ROHM’s DOT-247 package with SiC half-bridge configuration to develop a compatible package. That will expand Infineon’s recently announced Double TO-247 IGBT portfolio to include SiC half-bridge solutions. ROHM's advanced DOT-247 delivers higher power density and reduces assembly effort compared to standard discrete packages. Featuring a unique structure that integrates two TO-247 packages, it enables to reduce thermal resistance by approximately 15 percent and inductance by 50 percent compared to the TO-247. The advantages bring 2.3 times higher power density than the TO-247.　　ROHM and Infineon plan to expand their collaboration in the future to include other packages with both silicon and wide-bandgap power technologies such as SiC and gallium nitride (GaN). This will further strengthen the relationship between the two companies and provide customers with an even broader range of solutions and sourcing options.　　Semiconductors based on SiC have improved the performance of high-power applications by switching electricity even more efficiently, enabling high reliability and robustness under extreme conditions, while allowing for even smaller designs. Using ROHM’s and Infineon’s SiC products, customers can develop energy-efficient solutions and increase power density for applications such as electric vehicle charging, renewable energy systems and AI data centers.　　About ROHM　　ROHM, a leading semiconductor and electronic component manufacturer, was established in 1958. From the automotive and industrial equipment markets to the consumer and communication sectors, ROHM supplies ICs, discretes, and electronic components featuring superior quality and reliability through a global sales and development network. Our strengths in the analog and power markets allow us to propose optimized solutions for entire systems that combine peripheral components (i.e., transistors, diodes, resistors) with the latest SiC power devices as well as drive ICs that maximize their performance.　　Further information is available at https://www.rohm.com　　About Infineon　　Infineon Technologies AG is a global semiconductor leader in power systems and IoT. Infineon drives decarbonization and digitalization with its products and solutions. The company has around 58,060 employees worldwide and generated revenue of about €15 billion in the 2024 fiscal year (ending 30 September). Infineon is listed on the Frankfurt Stock Exchange (ticker symbol: IFX) and in the USA on the OTCQX International over-the-counter market (ticker symbol: IFNNY).
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Release time：2025-09-29 14:53 reading：624 Continue reading>>

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