ROHM’s New TVS Diodes: Supporting High-Speed <span style='color:red'>CAN</span> FD In-Vehicle Communication Systems for Autonomous Driving
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ROHM’s New TVS Diodes: Supporting High-Speed CAN FD In-Vehicle Communication Systems for Autonomous Driving

　　ROHM has developed bidirectional TVS (ESD protection) diodes compatible with CAN FD (CAN with Flexible Data rate) high-speed in-vehicle communication. Such protocols are seeing an increased demand in line with the ongoing advancement in autonomous driving and advanced driver assistance systems (ADAS). CAN FD is a crucial communication technology for safe, real-time data transmission between ECUs (Electronic Control Units) in vehicles. The new products achieve high-quality in-vehicle transmission by protecting electronic devices such as ECUs from surges and electrostatic discharge (ESD) while maintaining signal integrity in high-speed communication systems such as CAN FD.　　The rapid evolution of autonomous driving technology and ADAS is boosting the demand for faster, more reliable automotive communication. Autonomous driving in particular requires quick and accurate processing of vast amounts of data from sensors such as cameras, LiDAR and radar - leading to the adoption of CAN FD that enables faster, higher capacity data transfer compared to traditional CAN used in automotive communication.　　At the same time, to achieve high-speed in-vehicle communication, it is necessary to ensure stable transmission even under harsh environments. This has led to a growing demand for protection components that offer low terminal capacitance along with superior surge current rating and clamping voltage performance. As a result, the market for TVS diodes for automotive communication is expected to continue to grow in the future.　　To meet market needs, ROHM developed the ESDCANxx series that combines low terminal capacitance with excellent surge tolerance. Two package types are available: SOT-23 (2.9mm × 2.4mm) and DFN1010 (1.0mm × 1.0mm), both supporting standoff voltages (VRWM) of 24V and 27V. The SOT-23 package includes four models: 24V ESDCAN24HPY / ESDCAN24HXY and 27V ESDCAN27HPY / ESDCAN27HXY. Similarly, the DFN1010 package is also offered in four models: 24V ESDCAN24YPA / ESDCAN24YXA and 27V ESDCAN27YPA / ESDCAN27YXA, totaling 8 products in the lineup.　　The new products feature an optimized element structure that reduces terminal capacitance to a maximum of 3.5pF, preventing signal degradation during high-speed communication. High surge tolerance is also achieved, significantly improving the protection of electronic devices in automotive environments. For example, the 27V products of the DFN1010 package delivers approx. 3.2 times higher surge current rating and 16% lower clamping voltage compared to standard CAN FD-compatible products. This effectively safeguards expensive surge-sensitive electronic devices such as in-vehicle ECUs, ensuring high reliability even under harsh automotive environments. Going forward, ROHM will continue to develop products that support even faster in-vehicle communication in autonomous driving and communication environments - contributing to realizing a safer, more advanced mobility society.　　Application Examples        • Autonomous driving and Advanced Driver Assistance Systems (ADAS)　　• Automotive electric powertrain systems　　• In-vehicle infotainment systems　　Online Distributor Information        Sales Launch Date: December 2024　　Pricing: $0.9/unit (excluding tax)　　Target Products　　SOT23 Package: ESDCAN24HPY, ESDCAN24HXY, ESDCAN27HPY, ESDCAN27HXY　　DFN1010 Package: ESDCAN24YPA, ESDCAN24YXA, ESDCAN27YPA, ESDCAN27YXA　　Terminology         CAN FD (CAN with Flexible Data Rate)　　An extension of the CAN (Controller Area Network) standard, CAN FD offers faster data transfer speeds compared to conventional CAN, enabling the exchange of large volumes of data. Real-time communication between multiple in-vehicle electronic units (ECUs) is essential in systems like autonomous driving and ADAS.　　TVS Diode (Transient Voltage Suppression Diode)　　A semiconductor device designed to protect circuits from overvoltage, surges, and electrostatic discharge (ESD). TVS diodes absorb sudden voltage and current spikes (surges) to prevent circuit damage and malfunction. In automotive environments, safeguarding against severe electrical fluctuations is crucial.　　Terminal Capacitance　　Unwanted capacitance components that arise in electronic parts. When terminal capacitance is high, signal degradation occurs during high-speed transmission, making it important to reduce terminal capacitance for in-vehicle communication　　Surge Current Rating　　The maximum surge current a TVS diode can withstand. The higher the surge current rating, the stronger the protection against severe electrical fluctuations in automotive environments.　　Clamping Voltage　　The voltage maintained in the circuit when the TVS diode suppresses overvoltage caused by surges or other transient events. A lower clamping voltage provides more effective protection for circuits and devices, increasing the reliability of automotive equipment.
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Release time：2025-03-11 09:29 reading：312 Continue reading>>
NOVOSENSE's NCA1044-Q1 <span style='color:red'>CAN</span> Transceiver Successfully Passes the IBEE/FTZ-Zwickau EMC Certification
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NOVOSENSE's NCA1044-Q1 CAN Transceiver Successfully Passes the IBEE/FTZ-Zwickau EMC Certification

　　NOVOSENSE announced that its newly launched NCA1044-Q1, an automotive-grade CAN transceiver, had received the EMC certification test reports from IBEE/FTZ-Zwickau, a prestigious European testing organization. NCA1044-Q1 successfully passed all test items. NOVOSENSE now can provide the test report to support automakers in streamlining their system certification process and accelerating their product launches.　　CAN transceivers are commonly used in automotive CAN bus networks typically for critical control and diagnostics functions, such as battery, motor control, electronic control, braking, steering, and airbag systems. These applications are prone to various sources of electromagnetic interference (EMI), including battery, motor and electronic control systems for EVs, engine, frequency converter and wireless communication devices. Such disturbances can adversely affect data transmission, leading to signal errors or system failures, and even compromised system safety.　　In addition, due to the long distance of CAN bus wiring in automotive systems, CAN transceivers can easily radiate noise through the CAN bus acting as an antenna. This can result in radiated emission and conducted emission from modules or the entire system that exceed the requirements for vehicle. Therefore, CAN transceivers that provide good electromagnetic compatibility (EMC) performance are essential for ensuring system reliability.　　Full compliance with IBEE/FTZ-Zwickau certification　　Given the critical role of CAN transceiver's EMC performance in automotive safety, countries or regions have established stringent automotive EMC standards and certification procedures for automakers to follow. For example, both the SAE J2962 standard and the European IBEE/FTZ-Zwickau certification set clear requirements for the EMC performance of automotive electronics.　　The IBEE/FTZ-Zwickau certification is carried out according to the IEC 62228-3 standard. Compared with SAE J2962, IEC 62228-3 excludes the effects of peripheral circuits, focuses more on the EMC property of the CAN transceiver itself, and specifies higher performance level requirements. The IEC 62228-3 standard is also extensively adopted by automakers outside of Europe. The IBEE/FTZ-Zwickau certification includes four tests: Emission RF Disturbances, Immunity RF Disturbances, Immunity Transients, and Immunity ESD. NCA1044-Q1 from NOVOSENSE successfully passed all four tests.　　Industry-leading interference immunity　　NCA1044-Q1 features an ingenious circuit design that addresses the issue of output signal errors caused by abnormal high-voltage interference affecting its output circuit. This enhances its EMC performance, helping customers substantially reduce their EMC design complexity, simplify peripheral components, and lower costs.　　Furthermore, NCA1044-Q1 boasts industry-leading interference immunity. According to IEC 62228-3, when external RF noise at different frequency bands couples to the CAN bus, a higher pass-through power indicates stronger interference immunity. This means a lower risk of errors in the system.　　Even without the use of a common-mode inductor filter on the bus, NCA1044-Q1 from NOVOSENSE can still meet the highest power requirements specified in the standard (as shown in Figure-1 and Table-2). Although this test is typically not required at the application level, NCA1044-Q1 still successfully passed the test. This capability helps users reduce peripheral circuits, lower costs, and enhance system robustness.　　Packages and selection　　NCA1044-Q1 is now in mass production and is available in SOP8 and DFN8 packages. Compliant with the AEC-Q100 Grade 1 requirements, it operates in a wide temperature range from -40°C to 125°C, and provides over-temperature protection. NCA1044-Q1 also supports TXD dominant timeout function and remote wake-up in standby mode. 
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Release time：2024-12-16 17:06 reading：1048 Continue reading>>
ROHM’s New TRCDRIVE pack™ with 2-in-1 SiC Molded Module: Significantly Reduces the Size of xEV Inverters
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ROHM’s New TRCDRIVE pack™ with 2-in-1 SiC Molded Module: Significantly Reduces the Size of xEV Inverters

　　ROHM has developed four models as part of the TRCDRIVE pack™ series with 2-in-1 SiC molded modules (two of 750V-rated: BSTxxxD08P4A1x4, two of 1,200V-rated: BSTxxxD12P4A1x1) optimized for xEV (electric vehicles) traction inverters. TRCDRIVE pack™ supports up to 300kW and features high power density and a unique terminal configuration - help solving the key challenges of traction inverters in terms of miniaturization, higher efficiency, and fewer person-hours.　　As the electrification of cars rapidly advances towards achieving a decarbonized society, the development of electric powertrain systems that are more efficient, compact, and lightweight is currently progressing. However, for SiC power devices that are attracting attention as key components, achieving low loss in a small size has been a difficult challenge. ROHM solves these issues inside powertrains with its TRCDRIVE pack™.　　A trademark brand for ROHM SiC molded type modules developed specifically for traction inverter drive applications, TRCDRIVE pack™ reduces size by utilizing a unique structure that maximizes heat dissipation area. On top, ROHM’s 4th Generation SiC MOSFETs with low ON resistance are built in - resulting in an industry-leading power density 1.5 times higher than that of general SiC molded modules while greatly contributing to the miniaturization of inverters for xEVs.　　The modules are also equipped with control signal terminals using press fit pins enabling easy connection by simply pushing the gate driver board from the top, reducing installation time considerably. In addition, low inductance (5.7nH) is achieved by maximizing the current path and utilizing a two-layer bus-bar structure for the main wiring, contributing to lower losses during switching.　　Despite developing modules, ROHM has established a mass production system similar to discrete products, making it possible to increase production capacity by 30 times compared to conventional SiC case-type modules. To obtain samples, please contact a sales representative or visit the contact page on ROHM’s website.　　Product LineupTRCDRIVE pack™ is scheduled to be launched by March 2025 with a lineup of 12 models in different package sizes (Small / Large) and mounting patterns (TIM: heat dissipation sheet / Ag sinter). In addition, ROHM is developing a 6-in-1 product with built-in heat sink that is expected to facilitate rapid traction inverter design and model rollout tailored to a variety of design specifications.　　☆: Under Development　　AQG 324 is a qualification standard for automotive power modules established by ECPE (European Center for Power Electronics).　　European automakers are required to comply with this standard when considering adoption.　　Application Examples・ Automotive traction inverters　　Sales InformationAvailability: June 2024 (OEM quantities)　　Pricing: $550/unit (samples, excluding tax)　　Comprehensive Support      ROHM is committed to providing application-level support, including the use of in-house motor testing equipment. A variety of supporting materials are also offered, such as simulations and thermal designs that enable quick evaluation and adoption of TRCDRIVE pack™ products. Two evaluation kits are available as well, one for double-pulse testing and the other for 3-phase full bridge applications, enabling evaluation in similar conditions as practical inverter circuits.　　For details, please contact a sales representative or visit the contact page on ROHM’s website.　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　TerminologyTraction Inverter　　Traction motors in electric cars are driven by 3-phase AC power with a phase shift of 120°. Traction inverters convert direct current supplied from the battery into 3-phase alternating current.　　2-in-1　　To convert DC into 3-phase AC, one high-side and one low-side MOSFET are required per phase for switching. A 2-in-1 configuration combines both of these MOSFETs into a single module.
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Release time：2024-06-19 14:57 reading：666 Continue reading>>
NIDEC ASI’S BESS BUSINESS BOOMING, DRIVEN BY S<span style='color:red'>CAN</span>DINAVIA
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NIDEC ASI’S BESS BUSINESS BOOMING, DRIVEN BY SCANDINAVIA

　　Nidec ASI, part of the Motion & Energy Division of the Nidec Group, has just signed an agreement with Neoen, the leading independent producer of renewable energy in France, for the installation of battery energy storage systems (BESS). The first is located in Finland, near the town of Yllikkälä, the second in Sweden, in the region of Västernorrland. The two orders achieve a turnover of approximately EUR 70 million for Nidec ASI. The solutions are designed and assembled in France in Roche-La-Molière, near Saint-Etienne.　　These new infrastructures will enable local electricity grid operators to strengthen their activities in the auxiliary services market and their presence in the wholesale energy markets.　　Northern Europe (and Sweden in particular) is increasingly turning to renewable energies combined with battery storage to more easily integrate these intermittent energies into electricity grids and maintain their realtime stability. Nidec ASI is the market leader in BESS in Scandinavia, with a market share of over 50%. Sweden is the 4th largest market for Nidec ASI, with 7 contracts won in the last 3 years between Neoen, Germany’s Uniper (three sites in operation) and Sweden’s OX2.　　«With these new projects, Nidec ASI confirms its status as a partner of reference in the energy transition, particularly in the key market of Northern Europe» said Franck Girard, Président of Nidec ASI S.A.S, who also mentions « the excellence of Nidec’s teams in France, which contribute to making Nidec one of the world leaders in BESS. In addition, major investments are underway to significantly increase our production capacity and meet growing demand, particularly from export markets».　　The Isbillen Power Reserve (IPR) project in Sweden’s Västernorrland region.　　A turnkey project (engineering, procurement, construction) for Neoen, with a capacity of 93.9 MW / 93.9 MWh, scheduled to be commissioned in the first half of 2025.　　This new project is located close to the Neoen Storen site (52 MW / 52 MWh), which has already been awarded to Nidec ASI and is currently in the start-up phase.　　The Yllikkälä Power Reserve 2 (YPR2) project in Finland　　This is a turnkey project for Neoen Finland, which benefits from a specific design, adapted for a solution with a longer storage life: this lithium-ion battery with an installed capacity of 56.4 MW / 112.9 MWh (two hours) will therefore be the largest in the Nordic countries.　　Nidec will be responsible for the construction of the project and the supply of the battery boxes, cells and inverters. Commissioning is planned for the first half of 2025.　　«Storage plays an essential role in the energy transition, as it allows a higher percentage of renewable energy to be integrated into the electricity mix. We will accelerate the deployment of these large batteries, which will ensure a rapid and ambitious transition» ha concluded Xavier Barbaro, PDG of Neoen.　　Nidec Industrial Solutions (NIS) is the commercial platform, led by Nidec ASI, offering complete, customized electrical systems for energy efficiency in all fields. Its target markets are petrochemical, traditional and renewable energy, steel, marine and industrial automation. The multinational company specializes in heavy-duty applications with electric motors and generators up to 65 MW power (87,000 hp), electronic power converters and inverters, automation and software for industrial processes, and the retrofitting of power plants and hydroelectric generators. In addition, the company has strong know-how in the field of integrated systems for the production and storage of electrical energy (i.e. BESS) from renewable sources and their integration into electricity grids, as well as in the design and implementation of infrastructures for recharging electrical machines. Nidec ASI is also able to offer optimized technologies for motor control and to develop automation solutions for specific applications, customized to the client’s needs.　　Neoen, founded in 2008, is one of the leading independent producers of exclusively renewable energy. Its expertise in solar, wind and storage enables it to play an active part in the energy transition of the countries in which Neoen produces green, local and competitive energy. With a six-fold increase over the last six years, its capacity in operation or under construction now stands at 7.2 GW. Present on 4 continents, Neoen’s main assets include the largest solar farm in France (Cestas, 300 MWp), the largest wind farm in Finland (Mutkalampi, 404 MW), one of the most competitive solar power plants in the world in Mexico (El Llano, 375 MWp), and two of the largest large-scale storage power plants in the world, both based in Australia (Hornsdale Power Reserve, 150 MW / 193.5 MWh and Victorian Big Battery 300 MW / 450 MWh). A fast-growing company, Neoen’s ambition is to reach 10 GW in operation or under construction by the end of 2025. Neoen is listed on Compartment A of Euronext Paris (ISIN code: FR0011675362, mnemonic: NEOEN) and is a member of the SBF 120 and CAC Mid 60 indices.
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Release time：2024-03-12 16:38 reading：1187 Continue reading>>
ROHM’s New SBDs: Achieving Class-Leading* Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off
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ROHM’s New SBDs: Achieving Class-Leading* Reverse Recovery Time with 100V Breakdown Voltage by Adopting a Trench MOS Structure that Significantly Improves VF-IR Trade-Off

　　ROHM has developed 100V breakdown Schottky barrier diodes (SBDs) that deliver industry-leading reverse recovery time (trr) for power supply and protection circuits in automotive, industrial, and consumer applications.　　Although numerous types of diodes exist, highly efficient SBDs are increasingly being used inside a variety of applications. Particularly SBDs with a trench MOS structure that provide lower VF than planar types enable higher efficiency in rectification applications. One drawback of trench MOS structures, however, is that they typically feature worse trr than planar topologies - resulting in higher power loss when used for switching.　　In response, ROHM developed a new series utilizing a proprietary trench MOS structure that simultaneously reduces both VF and IR (which are in a trade-off relationship) while also achieving class-leading trr.　　Expanding on the four existing conventional SBD lineups optimized for a variety of requirements, the YQ series is ROHM’s first to adopt a trench MOS structure. The proprietary design achieves class-leading trr of 15ns that reduces trr loss by approx. 37% and overall switching loss by approx. 26% over general trench-type MOS products, contributing to lower application power consumption. The new structure also improves both VF and IR loss compared to conventional planar type SBDs. This results in lower power loss when used in forward bias applications such as rectification, while also providing less risk of thermal runaway which is a major concern with SBDs. As such, they are ideal for sets requiring high-speed switching, such as drive circuits for automotive LED headlamps and DC-DC converters in xEVs that are prone to generate heat.　　Going forward, ROHM will strive to further improve the quality of its semiconductor devices, from low to high voltages, while strengthening its expansive lineup to further reduce power consumption and achieve greater miniaturization.　　SBD Trench MOS StructureThe trench MOS structure is created by forming a trench using polysilicon in the epitaxial wafer layer to mitigate electric field concentration. This reduces the resistance of the epitaxial wafer layer, achieving lower VF when applying voltage in the forward direction. At the same time, during reverse bias the electric field concentration is minimized, significantly decreasing IR. As a result, the YQ series improves VF and IR by approx. 7% and 82%, respectively, compared to conventional products.　　And unlike with typical trench MOS structures where trr is worse than planar types due to larger parasitic capacitance (resistance component in the device), the YQ series achieves an industry-leading trr of 15ns by adopting a unique structural design. This allows switching losses to be reduced by approx. 26%, contributing to lower application power consumption.　　Application Examples• Automotive LED headlamps • xEV DC-DC converters • Power supplies for industrial equipment　　• Lighting　　☆: Under development　　* The TO-277GE package products released and sold by online distributors this time are rated for car infotainment and body systems. For each part number, we are preparing grades that can be installed in powertrains, etc. (using the same part number), with mass production scheduled to start in September 2024. (The packaging symbol after the above part numbers will differ)　　Product Page and Related InformationApplication notes highlighting the advantages of these new products in circuits along with a white paper that showcases the features of each SBD series are available on ROHM's website. An SBD page is also available that allows users to narrow down product options by entering voltage conditions and other parameters, facilitating the selection process during design. Click on the URLs below for more information.　　■ ROHM SBD Product Page　　https://www.rohm.com/products/diodes/schottky-barrier-diodes　　■ Application Notes　　Advantages of YQ Series: Compact and Highly Power Conversion Efficiency Schottky Barrier Diodes for Automotive　https://fscdn.rohm.com/en/products/databook/applinote/discrete/diodes/yq_sbd_automotive_an-e.pdf　　■ White Paper　　ROHM's SBD Lineup Contributes to Greater Miniaturization and Lower Loss in Automotive, Industrial, and Consumer Equipment　　https://fscdn.rohm.com/en/products/databook/white_paper/discrete/diodes/sbd_lineup_wp-e.pdf　　Online Sales Information　　Applicable Part Nos: Refer to the above table.　　Availability: December 2023　　Pricing: $2,5/unit (samples, excluding tax)　　The products will be sold at other online distributors as well.　　Terminologytrr (Reverse Recovery Time)　　The time it takes for the switching diode to switch from the ON state to completely OFF. The lower this value is, the smaller the switching losses.　　Forward Voltage (VF)　　A voltage drop that occurs when electricity flows in the forward direction from + to -. The lower this value is, the higher the efficiency.　　Reverse Current (IR)　　Reverse current generated when reverse voltage is applied. The lower this value is, the smaller the power consumption (reverse power loss).　　Thermal Runaway　　When a diode is conducted in the reverse direction, heat generated within the chip may exceed the heat dissipation of the package, causing IR to increase and eventually lead to destruction, - a phenomenon called thermal runaway. For SBDs with high IR values, thermal runaway is especially likely to occur, so care must be taken when designing circuits.
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Release time：2024-02-20 11:26 reading：1925 Continue reading>>
Can Smartphone Brands Succeed as They Swarm into In-House Chip Development?
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Can Smartphone Brands Succeed as They Swarm into In-House Chip Development?

　　As the global semiconductor supply chain based on specialization, the design and development of Application Processors (AP) or System on Chip (SoC) for smartphones primarily fall under the responsibility of IC design houses. In the wake of Apple’s notable success in pioneering in-house chips, other smartphone companies are now emulating this trend.　　Developing in-house chips poses a challenge for smartphone brands, involving not only significant initial investments but also the navigation of various modules and architectures on the smartphone’s SoCs, including ISP and Modem. Balancing performance and power consumption optimally in specific application scenarios tests the R&D skills of designers, presenting a particularly challenging task for brands lacking relevant technological expertise. However, fueled by the ambition to “product differentiation” and “have a say in the market,” smartphone brands remain enthusiastic about venturing into in-house chips.　　Smartphone Brands and SoC Dilemma　　In current specialization, smartphone brands typically purchase SoC chips from IC design companies like Qualcomm or MediaTek. While they can fine-tune chip performance to suit the brand’s needs after purchase, the room for modification is quite limited.　　Currently, smartphone product development is reaching maturity, and the market lacks innovation. For consumers, in the intensely competitive landscape, smartphones equipped with similar-level SoCs from Qualcomm may only differ in terms of “pricing” as a determining factor for purchase. If the market shifts into a price competition, it becomes unprofitable for smartphone brands.　　Moreover, without the ability to develop in-house SoC, smartphone brands become dependent on IC design companies. If IC design companies alter their fee structures or take measures such as raising prices or adding licensing fees, brands have little choice but to comply, significantly impacting their profits.　　As the central component of smartphones, if brands can design everything from scratch, it enables them to create product differentiation and gain a competitive edge. Although the initial investment is substantial, in the long run, it allows smartphone brands to have a say in the market.　　Apple’s in-house SoC chip has become a significant standard for other smartphone brands in shaping their strategies. Examining Apple’s development trends, the success of the iPhone is largely attributed to Apple’s creation of powerful and efficient SoC chips.　　Apple’s decision not to rely on IC design companies but to design chips in-house allowed iPhone to surpass other competing smartphone products. The key lies in Apple’s ability to plan for hardware and software from the ground up through its self-designed SoC architecture, achieving a high level of product differentiation. In addition to creating the most suitable SoC for the iPhone, it also solidifies a unique competitive advantage for Apple.　　The Costly Pursuit on SoC　　However, venturing into in-house chips poses formidable challenges for smartphone brands. The primary hurdle lies in the necessity for a substantial financial investment. According to statistics from The New York Times, Apple invested about US$10 billion in developing the A4 chip, while Apple’s revenue at that time was approximately US$65 billion. At that time, the smartphone market was not saturated at that time and was still in the development stage, providing ample room for Apple’s growth.　　Focus on the data, from 2010 to 2011, Apple’s revenue generated from selling iPhones grew from about US$25.2 billion to approximately US$45.9 billion, with a growth rate of about 82%. Apple’s revenue scale surpassed US$100 billion in 2012. With a huge and sufficient revenue scale support and the market still having growth potential, although self-developing chips require a large amount of investment, it is indeed feasible for Apple, whose iPhone business is thriving.　　In the current mature and competitive smartphone market, creating product differentiation is the only way to break through. As most Chinese smartphone brands lack the technology to develop SoC, it becomes trending to adopt new strategy of developing in-house chips. Apart from self-developing SoC, some brands also choose to enter from the “specific function chip” on the smartphone.　　Next Challenges in Plateauing Market　　However, compared to the smartphone market situation when Apple initially turned to in-house SoC, current market has entered a plateau phase from the previous golden growth period. Brands find it difficult to generate sufficient revenue scale to support the high cost of in-house chips in the saturated and competitive market.　　Moreover, with the continuous advancement of semiconductor process technology, the current cost to enter is much higher comparing to the past. Even with funds. Achieving in-house SoC involves a significant technical threshold, and it is challenging to bypass patents, especially when competitors have accumulated decades of experience.　　Therefore, while the strategy of brands choosing to self-develop chips is likely to impact IC design companies like Qualcomm and MediaTek, its effects are expected to be limited. The reason is that for IC design companies like MediaTek and Qualcomm, they already occupy a place in the market with exclusive key technologies and accumulated intellectual property rights (IP), making it challenging for smartphone brands’ in-house chips to completely replace MediaTek and Qualcomm products.
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Release time：2023-11-13 15:51 reading：1716 Continue reading>>
NXP Semiconductors TJA1051 High-Speed <span style='color:red'>CAN</span> Transceivers
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NXP Semiconductors TJA1051 High-Speed CAN Transceivers

　　NXP Semiconductors TJA1051 High-Speed CAN Transceivers offer an interface between a Controller Area Network (CAN) protocol controller and the physical two-wire CAN bus. The TJA1051 is intended for high-speed CAN applications in the automotive industry. The device provides differential transmit and receive capability to (a microcontroller with) a CAN protocol controller.The TJA1051 Transceivers are part of the third generation of high-speed CAN transceivers from NXP Semiconductors, supplying significant improvements over first- and second-generation devices such as the TJA1050. The TJA1051 also provides improved ElectroMagnetic Compatibility (EMC) and ElectroStatic Discharge (ESD) performance with:　　• Ideal passive behavior to the CAN bus when the supply voltage is off　　• TJA1051T/3 and TJA1051TK/3 can be interfaced directly to microcontrollers with supply voltages from 3V to 5V　　The TJA1051 implements the CAN physical layer defined in ISO 11898-2:2016 and SAE J2284-1 to SAE J2284-5. This implementation allows reliable communication in the CAN FD fast phase at data rates up to 5Mbit/s. These features make the TJA1051 an exceptional choice for all types of HS-CAN networks in nodes that do not require a standby mode with wake-up capability through the bus.　　The TJA1051 is a high-speed CAN stand-alone transceiver with Silent mode and available in three versions, determined only by the function of pin 5:　　• The TJA1051T is backward compatible with the TJA1050　　• The TJA1051T/3 and TJA1051TK/3 allow for direct interfacing to microcontrollers with supply voltages down to 3V　　• The TJA1051T/E allows the transceiver to be switched to a very low-current Off modeFEATURES　　General　　ISO 11898-2:2016 and SAE J2284-1 to SAE J2284-5 compliant　　Timing guaranteed for data rates up to 5Mbit/s in the CAN FD fast phase　　Suitable for 12V and 24V systems　　Low ElectroMagnetic Emission (EME) and high Electromagnetic Immunity (EMI)　　VIO input on TJA1051T/3 and TJA1051TK/3 allows for direct interfacing with 3V to 5V microcontrollers (available in SO8 and very small HVSON8 packages, respectively)　　EN input on TJA1051T/E allows the microcontroller to switch the transceiver to a very low-current Off mode　　Available in SO8 package or leadless HVSON8 package (3.0mm x 3.0mm) with improved Automated Optical Inspection (AOI) capability　　Dark green product (halogen-free and Restriction of Hazardous Substances (RoHS) compliant)　　AEC-Q100 qualified　　Low-power management　　Functional behavior predictable under all supply conditions　　Transceiver disengages from the bus when not powered up (zero loads)　　Protection　　High ElectroStatic Discharge (ESD) handling capability on the bus pins　　Bus pins protected against transients in automotive environments　　Transmit Data (TXD) dominant time-out function　　Undervoltage detection on pins VCC and VIO　　Thermally protected　　SPECIFICATIONS　　4.5V to 5.5V supply voltage　　-8kV to +8kV electrostatic discharge voltage　　Supply current　　2.5mA silent mode　　10mA normal mode, bus recessive　　70mA normal mode, bus dominant
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Release time：2023-08-22 13:23 reading：2136 Continue reading>>
How can semiconductor manufacturers reduce their CO2 emissions
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How can semiconductor manufacturers reduce their CO2 emissions

　　Semiconductor manufacturers can’t reduce CO2 emissions and energy consumption without digital technology and an end-to-end strategy　　Semiconductor manufacturers are in a challenging position – they need to fulfill soaring chip demand while at the same time decarburizing their supply chain. The industry already has a giant carbon footprint and as it grows, so does its carbon footprint.　　Semiconductors facilitate the ongoing shift from traditional vehicles to mobility solutions: focussing on connectivity, autonomous driving, electrification and low carbon mobility. Semiconductors help redefine mobility, reduce emissions and help alleviate congestion.　　Emission reduction in vehicles and in transportation systems is made possible by semiconductor-based in-vehicle networks and sensors that increase fuel efficiency by reducing vehicle weight. Battery control and energy management semiconductor solutions extend the distance range of electric and hybrid transport and improve the predictability of that range: increased distance range is key to mass adoption of Electric vehicles.　　Certain companies in the semiconductor industry have focused on sustainability for a significant period of time. ST Microelectronics and Intel have long records of focusing on water conservation and programs to reduce power. However, the Paris Accord and the recent article published in Bloomberg, accusing the semiconductor industry of having a giant carbon footprint, have initiated a new call to arms, or at least a more concerted effort on reducing the semiconductor industries carbon footprint.　　Sustainability can be challenging, and while larger companies can dedicate resources to focusing on sustainability, smaller companies that support the semiconductor industry may not be able to support a dedicated Environmental Social Governance (ESG program). SEMI has picked up the ball over the past year and now is working to provide guidance and eventually standards such that the semiconductor manufacturing community can address sustainability as an industry, instead of company by company.
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Release time：2023-07-17 15:04 reading：3111 Continue reading>>
ZEISS:Industrial 3D Scanning Technology
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ZEISS:Industrial 3D Scanning Technology

　　The ATOS series of industrial non-contact 3D scanners using structured blue light deliver precise scans with detailed resolution at high speed.  ATOS was developed with advanced hardware and intelligent software for repeatable and precise measurements.　　ATOS sensors are designed as flexible 3D scanners for complex measuring and inspection tasks in different industries.　　GOM ScanCobot is an easy-to-use entry-level solution for automated 3D metrology, giving the metrologist more time for data evaluation and problem analysis.　　ATOS Q　　Compact top performer for complex inspections　　The lightweight and flexible 3D scanner ATOS Q is optimal for small to medium-sized parts. The system combines high-tech electronics and optics with robust design and a powerful software, enabling high-precision measuring results.
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Release time：2023-04-14 11:31 reading：2027 Continue reading>>
STMicroelectronics 32-Channel Ultrasound Transmitter Suited to Handheld Scanners
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STMicroelectronics 32-Channel Ultrasound Transmitter Suited to Handheld Scanners

　　STMicroelectronics has expanded its family of advanced ultrasound transmitters by adding a 32-channel variant with high output current for portable applications. The new transmitter, STHVUP32, provides ±800mA aimed at portable systems that demand extra drive capability for a coaxial cable-mounted probe.　　Joining the portfolio alongside the 64-channel STHVUP64, the new 32-channel version contains similar features to increase performance and integration in next-generation affordable, high-performing scanners for medical and industrial applications. These include innovations to maximize image quality, built-in digital beam steering, a space-saving driver architecture, and low power consumption.　　The STHVUP32 has 5-level output capability, in addition to the common 3-level output, which enhances flexibility to optimize the picture quality. Its high output current allows driving the scanner’s piezoelectric transducer at high speed to enable multiple imaging modes. It also helps achieve minimum pulse duration of 5ns for superior image detail. The transmitter supports continuous-wave (CW) and pulsed-wave (PW) operating modes to allow various types of analysis including cavities and liquid flow.　　The digital beam steering enhances directional control by permitting greater precision than conventional analog steering using delay circuits. By integrating the beam-steering logic, the transmitter can be used without a companion chip such as an FPGA. This saves PCB space and routing complexity, as well as bypassing FPGA-design challenges.　　Also new, the transmitter has a self-biased driver architecture that saves connecting decoupling capacitors to the transmitter’s power-supply pins. This helps ensure a smaller circuit footprint, as well as lowering the bill of materials (BOM). In addition, the STHVUP32 is housed in a smaller package than comparable alternative ICs thereby helping designers create next-generation products in even smaller form factors.　　While having extremely low power consumption, which is key for battery-operated systems, the STHVUP32 is richly featured for a superior user experience. There is on-chip memory for storing transmission patterns, and synchronization is possible using a clock signal up to 200MHz to enhance image quality by minimizing jitter. The IC also provides a communication port that supports multiple CMOS signaling standards.　　Built-in protection includes noise blocking, thermal protection, under-voltage protection, and recirculating current protection. There is also a diagnostic register that allows directly reading the causes of interrupts to ease debugging in the event of a malfunction.　　The STHVUP32 is built using ST’s proven BCD8s-SOI technology that supports analog (bipolar), digital (CMOS), and power (DMOS) circuits on the same die. It’s in production now, in a 11.5mm x 10.5mm x 1.35mm 168-ball FC-BGA168 package.
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Release time：2023-02-22 15:47 reading：2884 Continue reading>>

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