<span style='color:red'>Diotec</span> Semiconductor MMFTP3334K P-Channel Enhancement Mode FET
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Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET

　　Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET offers fast switching times, high drain current (4A maximum), and low on-state resistance in a SOT-23 (TO-236) package. The MMFTP3334K FET features a 30V maximum drain-source voltage, 1000mW maximum power dissipation, and 5.9nC typical total gate charge in a -50°C to +150°C junction temperature range. The Diotec Semiconductor MMFTP6312D Dual P-Channel MOSFET is ideal for signal processing, drivers, and logic-level converters.　　FEATURES　　ESD protected gate　　High drain current　　Low on-state resistance　　Fast switching times　　Commercial-grade　　UL 94V-0 case material　　SOT-23 (TO-236) package style　　Moisture Sensitivity Level (MSL) 1　　AEC-Q101 qualified (-AQ only)　　Lead-free, RoHS and REACH compliant　　APPLICATIONS　　Signal processing　　Logic level converters　　Drivers　　SPECIFICATIONS　　30V maximum drain-source voltage　　±20V maximum gate-source voltage　　1000mW maximum power dissipation　　4A maximum drain current　　16A maximum peak drain current　　1?A maximum drain-source leakage current　　10?A maximum gate-source leakage current　　0.8V to 2V gate threshold voltage range　　71mΩ to 136mΩ maximum drain-source on-state resistance range　　280pF typical input capacitance　　55pF typical output capacitance　　40pf typical reverse transfer capacitance　　5.9nC typical total gate charge　　0.8nC typical gate-source charge　　1.2nC typical gate-drain charge　　13ns typical turn-on delay/rise time　　22ns typical turn-off delay/fall time　　1.2V maximum forward voltage　　125K/W typical junction-to-ambient thermal resistance　　-55°C to +150°C junction temperature range
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Release time：2023-02-28 14:42 reading：1721 Continue reading>>

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