Apple Reportedly Eyes Samsung, Intel U.S. Foundry for Core Chips Amid TSMC Constraints, Supply Diversification
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Apple Reportedly Eyes Samsung, Intel U.S. Foundry for Core Chips Amid TSMC Constraints, Supply Diversification

　　Apple is reportedly weighing the possibility of having some of its core device chips manufactured by Samsung and Intel. According to Bloomberg, citing sources, the company has held preliminary discussions on using the two as alternative production partners for its main processors—potentially providing a second sourcing option alongside its longstanding supplier, TSMC.　　Sources say the company has held early-stage discussions with Intel about leveraging its foundry services, while Apple executives have also visited a Samsung facility under construction in Texas that is expected to produce advanced chips.　　That said, the report notes that neither effort has led to any orders so far. Engagements with both suppliers remain at a preliminary stage, as Apple continues to have reservations about adopting non-TSMC manufacturing technologies.　　One of the key drivers behind Apple’s potential shift is supply constraints at TSMC, according to Bloomberg. As the report notes, Apple executives addressed the issue during the company’s quarterly earnings call last week, indicating that limited chip availability for iPhone and Mac devices is currently weighing on growth.　　In early 2026, Tim Cook identified access to advanced-node manufacturing as the main bottleneck for Apple’s iPhone output, according to CNBC. He noted that production is constrained by limited capacity for the company’s A-series and M-series system-on-chip (SoC) chips, which are fabricated on TSMC’s 3nm process.　　In addition, it also aims to maintain at least two suppliers for key components, allowing Apple to strengthen its negotiating leverage on pricing while reducing the risk of supply disruptions, Bloomberg adds.　　Apple’s Reported Supplier Talks May Open Door for Intel Comeback, Samsung Gains　　Apple’s talks with both companies reportedly began before the most recent supply constraints emerged. As Bloomberg notes, collaborating with Intel could offer an added advantage, potentially strengthening Apple’s ties with the Donald Trump administration. As for Samsung, the report indicates that it has already been working on supplying more peripheral components for Apple’s devices, including power management parts.　　In an August 2025 press release, Apple also announced a partnership with Samsung to co-develop a new chip manufacturing technology at Samsung’s Austin fab. Citing industry sources, Business Korea adds that the chip Samsung is expected to produce will likely be used as an image sensor in future iPhones and other Apple products.　　Separately, industry momentum appears to be building around Intel’s foundry push. According to Commercial Times, major tech firms including Google and Apple are weighing a shift to Intel’s foundry. The report adds that Apple’s M-series chips are evaluating Intel’s 18A-P node.　　Apple’s potential shift could provide a boost to both Samsung and Intel. As the report notes, securing external customers for its foundry business is central to Intel’s turnaround strategy under CEO Lip-Bu Tan. Winning Apple as a client would mark a major milestone for Tan and could help draw in additional business. Samsung, meanwhile, would also stand to gain significantly from an endorsement by Apple.
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Release time：2026-05-06 14:44 reading：138 Continue reading>>
NOVOSENSE Launches Next-Generation Isolated CAN Transceiver N<span style='color:red'>SI</span>1150, Supporting ±70V Bus Fault Protection and Higher Data Rates
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NOVOSENSE Launches Next-Generation Isolated CAN Transceiver NSI1150, Supporting ±70V Bus Fault Protection and Higher Data Rates

　　NOVOSENSE today announced the launch of its new industrial-grade isolated CAN transceiver, the NSI1150 series. Built on NOVOSENSE's third-generation isolation technology, the device delivers ±70V bus fault protection and up to ±150kV/μs (typical) common-mode transient immunity (CMTI). Compared to the previous generation (NSI1050), the NSI1150 achieves a comprehensive improvement in reliability and noise immunity. It also integrates NOVOSENSE's proprietary CAN FD transceiver, supporting communication speeds of up to 5 Mbps.　　The NSI1150 is available in multiple package options, including SOW16, SOW8, SOP8, SOWW8, and DUB8, addressing diverse design requirements. It is well suited for high-voltage, high-noise, multi-node applications such as industrial automation and control, energy and power systems, as well as communications and servers.　　Reliability Upgrade for Harsh Environments　　The NSI1150 delivers industry-leading reliability and robustness, featuring a high CMTI of ±150kV/μs (typical) and ±70V bus fault protection, enabling it to effectively handle strong electromagnetic interference and ground potential differences in demanding environments.　　In addition, all pins support ±6kV HBM ESD protection and 10kV surge capability across the isolation barrier, ensuring stable communication even under extreme conditions. The device offers multiple isolation ratings—3 kVRMS, 5 kVRMS, and 7.5 kVRMS—to meet stringent safety requirements across various applications, reinforcing system protection in critical sectors such as industrial automation and energy infrastructure.　　Multiple Package Options for Flexible Design　　The NSI1150 is offered in five mainstream package options—SOW16, SOW8, SOP8, SOWW8, and DUB8—accommodating different space constraints and safety requirements. Among them, the newly introduced SOWW8 wide-body package provides up to 15 mm creepage distance, making it ideal for applications with strict creepage requirements, such as photovoltaic systems, EV charging stations, and industrial power supplies.　　This extended creepage distance simplifies safety certification processes and enables more flexible layout design for high power density systems. The diversified package portfolio further enhances design flexibility and accelerates time-to-market.　　"Isolation+" Portfolio Setting Industry Benchmark　　Leveraging its deep expertise and technological leadership in isolation, NOVOSENSE offers a comprehensive "Isolation+" portfolio, including digital isolators, isolated sensing, isolated interfaces, isolated power, and isolated drivers.　　NOVOSENSE is building a robust safety foundation for high-voltage systems with its full "Isolation+" ecosystem:　　"+" stands for enhanced safety: NOVOSENSE products deliver safety levels exceeding basic isolation standards, and build a more reliable system isolation safety boundary for customers' systems.　　"+" stands for full product ecosystem: With mature capacitive isolation technology IP as the cornerstone, expand into a complete product portfolio to provide one-stop isolation solutions.　　"+" stands for in-depth application empowerment: Meet the emerging needs of scenarios including electric vehicle high-voltage platforms, high-power photovoltaic-storage-charging systems, and high-integration, high-efficiency AI server power supplies, enabling system-level safety, reliability and efficiency.　　With its comprehensive "Isolation+" product strategy—anchored by core technology IP and a full ecosystem—NOVOSENSE continues to set the benchmark in isolation semiconductors, delivering one-stop isolation solutions to customers worldwide.　　Previous:
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Release time：2026-04-24 10:58 reading：309 Continue reading>>
Murata begins mass production of seven automotive MLCCs with world-leading capacitance for their rated voltage and size
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Murata begins mass production of seven automotive MLCCs with world-leading capacitance for their rated voltage and size

　　Murata Manufacturing Co., Ltd has begun mass production of seven AEC-Q200-qualified multilayer ceramic capacitors (MLCCs) that achieve the world’s largest capacitance for a given rated voltage and size*, supporting stable operation of in-vehicle systems and greater design flexibility. Five parts in the GCM series are rated at 2.5-4 Vdc, targeting IC peripheral circuits in advanced driver assistance systems (ADAS) and autonomous driving (AD) applications. The remaining two MLCCs are rated at 25 Vdc for in-vehicle power line applications.　　In recent years, as ADAS and AD technologies advance, the number and performance level of systems installed in vehicles have continued to increase. As a result, demand for higher capacitance low-voltage MLCCs used around ICs has grown to ensure stable operation. In addition, as the number of MLCCs mounted on PCBs increases, space constraints become the critical, limiting factor in design. At the same time, for medium-rated voltage MLCCs used in automotive power lines, there is a rising demand for both miniaturization and higher capacitance to improve power and mounting density. These needs are particularly pronounced in ADAS and AD systems, where IC peripheral circuits and power lines are both subject to significant voltage fluctuations, requiring further increases in capacitance and reductions in component size.　　Leveraging its proprietary ceramic materials along with particle refinement and uniformity technologies, Murata introduces seven automotive MLCCs that achieve the world’s largest capacitance by rated voltage and size.　　For low-rated voltage MLCCs, Murata has expanded its lineup of products with a capacitance of 100 µF or higher, achieving 100 µF in the 1206-inch (3.2 mm × 1.6 mm) size, which was previously available only in the larger 1210-inch (3.2 mm × 2.5 mm) size. This reduces PCB mounting area by approximately 36%. In addition, in the smallest automotive MLCC size of 0201-inch (0.6 mm × 0.3 mm), capacitance has been increased from the typical 1-2.2 µF. For medium-rated voltage MLCCs, Murata has achieved a capacitance of 1 µF in the 0402-inch (1.0 mm × 0.5 mm) size, which was previously realized in the larger 0603-inch (1.6 mm × 0.8 mm), reducing PCB mounting area by approximately 61%.　　By combining this product lineup, Murata addresses a wide range of challenges in the automotive market, including higher capacitance requirements around ICs, severe PCB space constraints, and stabilization of power lines, thereby contributing to stable operation of entire systems and greater design flexibility. Furthermore, reducing the number of MLCCs required enables lower PCB material usage and reduced power consumption during manufacturing, helping to lessen the environmental impact.　　In the low-voltage lineup, the 2.5 Vdc rated GCM035D70E225ME02 is available in the 0201-inch size (0.6 mm × 0.3 mm), and offers a capacitance of 2.2 µF, achieving the world’s largest capacitance for its rated voltage and size class. The 1206-inch size (3.2 mm × 1.6 mm) GCM31CD70E107ME36 is rated at 2.5 Vdc and provides 100 µF, the world’s highest capacitance in its class. The GCM035D70G225MEC2 is rated at 4 Vdc, available in the 0201-inch size (0.6 mm × 0.3 mm), and delivers 2.2 µF, also the world’s highest capacitance for this category. The GCM31CD70G107ME36 is rated at 4 Vdc, available in the 1206-inch size (3.2 mm × 1.6 mm), and offers 100 µF, achieving the world’s highest capacitance for this rated voltage and size. The GCM32ED70G227MEC4 is rated at 4 Vdc, available in the 1210-inch size (3.2 mm × 2.5 mm), and provides 220 µF, the world’s largest capacitance in this class.　　The medium-rated voltage lineup has two part numbers designed for power line applications. The GCM155D71E105KE36 is rated at 25 Vdc, available in the 0402-inch size (1.0 mm × 0.5 mm), and offers 1 µF, achieving the world’s highest capacitance for this rated voltage and size. Also rated at 25 Vdc, the GCM31CC71E226ME36 is available in the 1206-inch size (3.2 mm × 1.6 mm), and provides 22 µF, also the world’s highest capacitance in its class.　　Murata has long focused on the development of automotive MLCCs and has delivered a wide range of products that demonstrate excellent performance across applications from IC peripheral circuits to powertrain and safety systems. Going forward, Murata will continue to contribute to higher performance and increased functionality of cars through ongoing product development that responds to evolving market needs.
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Release time：2026-04-24 10:39 reading：286 Continue reading>>
ROHM Develops 5th Generation SiC MOSFETs with Approx. 30% Lower On-Resistance at High Temperatures
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ROHM Develops 5th Generation SiC MOSFETs with Approx. 30% Lower On-Resistance at High Temperatures

　　ROHM has developed the latest device of its EcoSiC™ series: the 5th Generation SiC MOSFETs optimized for high efficiency power applications. This technology is ideally suitable for automotive electric powertrain systems – such as traction inverters for electric vehicles (xEVs) – as well as power supplies for AI servers and industrial equipment such as data centers.　　In recent years, the rapid proliferation of generative AI and big data processing has accelerated the deployment of high-performance servers in the industrial equipment sector. The resulting surge in power density is placing a greater strain on power infrastructure, raising concerns about localized supply shortages. While smart grids that combine renewable energy sources (i.e., solar power) with existing power supply networks are emerging as a possible solution, minimizing losses during energy conversion and storage remains a key challenge.　　In the automotive sector, next-generation electric vehicles require extended cruising range and faster charging, creating demand for lower-loss inverters and higher performance onboard chargers (OBCs). Against this backdrop, the adoption of SiC devices capable of both low loss and high efficiency is increasing in high-power applications ranging from a few kilowatts to hundreds of kilowatts.　　As the first semiconductor company globally, ROHM was the first in the world to begin mass production of SiC MOSFETs in 2010, contributing to reducing energy losses by implementing SiC devices over a wide range of high-power applications, including offering an early lineup of products compliant with automotive reliability standards such as AEC-Q101. Furthermore, the 4th generation SiC MOSFETs, for which sample provision began in June 2020, have been adopted globally in automotive and industrial applications. They are available across a broad product portfolio, including both discrete devices and modules, supporting the rapid market adoption of SiC technology.　　The newly developed 5th Generation SiC MOSFETs achieve industry-leading low loss, driving the broader adoption of SiC technology. Through structural enhancements and manufacturing process optimization, ON resistance is reduced by approximately 30% during high temperature operation (Tj=175°C) compared to conventional 4th Generation products (under the same breakdown voltage and chip size conditions). This improvement contributes to making units smaller while increasing output power in high temperature applications such as traction inverters for xEVs.　　ROHM began supporting the bare dies business with 5th Generation SiC MOSFETs in 2025 and completed development in March 2026. Furthermore, starting from July 2026, ROHM will provide samples of discrete devices and modules incorporating 5th Generation SiC MOSFETs.　　Going forward, ROHM plans to expand its 5th Generation SiC MOSFET lineup with additional breakdown voltage and package options. ROHM will also continue to enhance its design tools and strengthen application support. By further promoting the implementation of SiC technology – now entering the mainstream phase – ROHM contributes to more efficient power utilization across a wide variety of high-power applications.　　Application ExamplesAutomotive Systems: xEV traction inverters, onboard chargers (OBCs), DC-DC converters, electric compressors　　Industrial Equipment: Power supplies for AI servers and data centers, PV inverters, ESS (Energy Storage Systems), UPS (Uninterruptible Power Supplies), eVTOL, AC servos　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops the core technologies needed to advance SiC devices completely in-house, from wafer fabrication and process development to packaging and quality control. At the same time, we have established a fully integrated production system that spans the entire manufacturing flow, solidifying our position as a leading SiC supplier.
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Release time：2026-04-24 10:34 reading：285 Continue reading>>
BIWIN Mini SSD Wins “Memory of the Year” of 2026 China IC Design Awards
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BIWIN Mini SSD Wins “Memory of the Year” of 2026 China IC Design Awards

　　Recently, the 2026 International IC & Component Exhibition and Conference (shortened as IIC), hosted by Aspencore, successfully concluded in Shanghai. At the concurrent 2026 China IC Design Awards Ceremony, BIWIN Mini SSD was honored with the “Memory of the Year” award. This recognition not only affirms the product’s technological innovation and commercial value, but also highlights BIWIN’s continued leadership and long-term commitment to advancing the memory industry.　　01 Redefining SSD Form Factor and Architecture　　“China IC Design Awards”, as one of the most authoritative and creditable industry awards, acknowledges enterprises and products that stands out in technological innovation, market application, and industry contribution. Among these, “Memory of the Year” Award, as one of the core evaluative unit, cites memory products that features innovative design, scaled production, and technical improvements.　　Rather than merely a physically-miniaturized SSD, BIWIN Mini SSD breaks the traditional trade-off between performance, size, and scalability. Through innovating solutions and advanced packaging, Mini SSD offers a brand-new memory solution combined with compact form factor, strong performance and excellent scalability for AI PC and on-device AI scenarios. It effectively addresses key limitations of existing solutions, such as the oversized form factor of M.2 SSD, performance bottlenecks of MicroSD cards, and limited scalability of UFS/eMMC.　　Ultra-compact, flagship performance　　Delivers up to 2TB capacity, 3700MB/s read, and 3400MB/s write speeds in just 40% the size of an M.2 2230 SSD and about 1g weight.　　Rugged and reliable　　Engineered with IP68-rated dust and water resistance, 3-meter drop protection, and 12,000+ insertion cycles for demanding mobile environments.　　Tool-free expandability　　Features an industry-first standardized slot-based design, enabling seamless TB-level storage upgrades without tools.　　Since its debut, BIWIN Mini SSD has received widespread global recognition, including Best Inventions of 2025 by TIME, CES 2026 TWICE Picks Award, Embedded World Best-in-Show, and MWC 2026 Best-in-Show. It has also been shortlisted for the 2026 Edison Awards, often referred to as the “Oscars of innovation.” This latest recognition further validates Mini SSD’s leadership across both technology innovation and commercial potential.　　02 Accelerating Ecosystem and Standardization　　BIWIN Mini SSD is more than a product—it is the foundation of an open ecosystem. It has already been adopted by leading brands such as One-Netbook, GPD, and Waterworld, enabling commercialization in AI PCs and handheld gaming devices. To accelerate adoption, BIWIN is collaborating with ecosystem leaders including Intel, Longcheer, BYD Electronics and Luxshare Precision.　　Promoting Standardization to Reduce Compatibility Costs　　Establishing IP enterprises, incentive mechanisms and royalty-sharing frameworks to to align ecosystem interests; opening up technical specifications and interface standards to lower integration barriers and reduce industry-wide adaptation costs.　　Accelerating Adoption Across AI Devices　　Focusing on key scenarios such as AI PC, intelligent robots, and gaming consoles, with multiple partners actively working on integration; collaborating with partners to speed up technical validation, introduction and industry-wide application.　　Advancing the Technology Roadmap　　Deploying forward-looking products such as PCIe Gen4 ×4 and Gen5 ×4 solutions to enhance bandwidth performance; advancing R&D on 4TB or larger-capacity products based on 32-die stacking packaging process.　　03 Full-Stack Capabilities Power “Device–Edge–Cloud”　　The success of BIWIN Mini SSD is rooted in BIWIN’s full-stack capabilities based on “Integrated Solutions and Manufacturing” strategy. With continuous investments in R&D to reinforce the innovation foundation, BIWIN has spent RMB 632 million in 2025, representing a 41.34% year-on-year growth. To date, BIWIN has accumulated 521 patents worldwide along with 66 software copyrights.　　Backed by deep expertise across solution development, IC design, and advanced packaging technologies, BIWIN has built a comprehensive portfolio covering edge AI devices, smart terminals, industrial and automotive-grade applications, as well as enterprise storage. This end-to-end capability enables the company to effectively serve customers across the device–edge–cloud spectrum, translating technology into real-world competitiveness.　　In emerging on-device AI, BIWIN’s ePoP solutions combine ultra-thin stacking with power-efficient firmware, supporting leading companies such as Google, Meta, Xiaomi, and Rokid. These solutions are optimized for wearables like smart glasses and smartwatches, where size, latency, and power efficiency are critical. In automotive, BIWIN has been adopted by 20+ OEMs and Tier 1 suppliers, with products already in mass production. In the cloud segment, its enterprise SSDs are shipping at scale to leading OEMs, AI server vendors, and major internet companies.　　The “Memory of the Year” award at the 2026 China IC Design Awards underscores the technical strength and commercial momentum of BIWIN Mini SSD. BIWIN will continue to focus on innovation to meet the growing demands of the AI era and drive long-term growth.
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Release time：2026-04-24 10:27 reading：319 Continue reading>>
Renesas’ Radiation Hardened ICs Take Flight on NASA’s Artemis II Crewed Lunar Mission
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Renesas’ Radiation Hardened ICs Take Flight on NASA’s Artemis II Crewed Lunar Mission

　　TOKYO, Japan ― Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced its radiation‑hardened (rad-hard) ICs are being used in NASA’s Artemis II mission, which successfully launched from the Kennedy Space Center in Florida on April 1. The first crewed mission around the moon in decades, Artemis II represents a major milestone in NASA’s plans to return humans to the moon and establish a long-term presence on the lunar surface.　　Four astronauts are now en route to orbit the moon aboard NASA’s Orion spacecraft as part of NASA’s Artemis II mission, taking humans farther from Earth than they have traveled in over fifty years. During the flight, the crew will test spacecraft systems and crew performance in this deep‑space environment before returning safely home. The mission will validate key spacecraft capabilities and position Orion for future crewed journeys and lunar landings.　　Within the Artemis II core systems, including the Orion capsule and Space Launch System (SLS) rocket, Renesas rad-hard ICs are used across multiple subsystems. These Intersil-branded devices are embedded in the space vehicle’s avionics and safety launch system, helping to regulate and distribute power, maintain signal integrity and support onboard computing. These specialized ICs are built to operate reliably when exposed to the elevated levels of radiation and extreme temperatures that are typical of human space missions.　　“Human space flight missions leave no margin for failure, and we’re proud to be one of the select few semiconductor companies entrusted to provide space-qualified technology for this historic crewed Artemis mission,” said Chris Stephens, Vice President of the HiRel Business Division at Renesas. “Our rad-hard devices help keep spacecraft systems connected, protected and precisely controlled, as crews venture into deep space. We look forward to supporting future landmark missions and ushering in the next era of solar system exploration with our space‑grade semiconductor solutions.”　　The Renesas Intersil brand has a long history in the space industry spanning more than six decades, beginning with the founding of Radiation Inc. in 1950. Since then, virtually every satellite, shuttle launch and deep-space exploration mission has included Intersil-branded products. Renesas leverages this experience to deliver efficient, thermally-optimized and highly-reliable SMD, MIL-STD-883 and MIL-PRF 38535 Class-V/Q Intersil-branded products for the defense, high-reliability (Hi-Rel), and rad-hard space markets. Renesas Intersil-brand rad-hard ICs support subsystems for mission critical applications in data communications transfer, power supplies and power conditioning, general protection circuitry, and telemetry, tracking and control (TT&C).　　For more information on Renesas’ Intersil-brand space and hi-reliability solutions, visit: www.renesas.com/space.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube, and Instagram.　　(Remarks) All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.　　The content in the press release, including, but not limited to, product prices and specifications, is based on the information as of the date indicated on the document, but may be subject to change without prior notice.
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Release time：2026-04-08 17:16 reading：479 Continue reading>>
ROHM has added New Lineup of 17 High-Performance Op Amps Enhancing Design Flexibility
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ROHM has added New Lineup of 17 High-Performance Op Amps Enhancing Design Flexibility

　　ROHM has added the new CMOS Operational Amplifier (op amp) series “TLRx728” and “BD728x” to its lineup. These are suitable for a wide range of applications including automotive, industrial, and consumer systems. A broad lineup also makes product selection easier.　　In recent years, demand for high-accuracy op amps has been rapidly increasing as automotive and industrial systems become more sophisticated, demanding faster speed, better precision, and higher efficiency. In applications requiring amplification of sensor outputs, minimizing signal error and delay is essential. To meet these requirements, a well-balanced set of key characteristics is needed, including Input Offset Voltage, Noise, and Slew Rate.　　These new products are high-performance op amps that offer a low input offset voltage, low noise, and high slew rate. TLRx728 features an input offset voltage of 150 μV (typ.), while the BD728x offers 1.6 mV (typ.). Both series have a noise voltage density of 12 nV/√Hz at 1kHz and a slew rate of 10 V/μs. They are therefore suitable for a wide range of precision applications, including sensor signal processing, current detection circuits, motor driver control, and power supply monitoring systems. Both series are designed to balance versatility and high performance rather than being limited to specific applications.　　Rail-to-Rail input/output capability allows maximum utilization of the power supply voltage range, ensuring a wide dynamic range.　　Furthermore, in addition to 1 channel, 2 channels, and 4 channels configurations, a diverse range of packages is available, enabling optimal product selection based on application and board size.　　The new products are being released simultaneously except for certain part numbers (Sample Price: 1-channel: $2.0, 2-channels: $2.8, 4-channels: $4.0 per unit, excluding tax).　　Application Examples　　Automotive equipment, industrial equipment, and consumer electronics.　　Example use case: Sensor signal processing, current detection circuits, motor driver control, power supply monitoring systems.　　Terminology　　Input Offset Voltage　　The voltage that must be applied between the op amp’s two input terminals to force the output to zero volts.　　Slew Rate　　A performance metric indicating how rapidly an op amp's output voltage can change while operating in linear region.　　Noise Voltage Density　　Also called noise spectral density. This is noise power per square root of bandwidth of 1 Hz. The total noise power within a bandwidth of B Hz is Noise Voltage Density x √B.
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Release time：2026-04-03 10:56 reading：479 Continue reading>>
ROHM has Introduced Reference Designs for Three-Phase Inverters Featuring New SiC Power Modules
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ROHM has Introduced Reference Designs for Three-Phase Inverters Featuring New SiC Power Modules

　　ROHM has released reference designs "REF68005", "REF68006", and "REF68004" for three-phase inverter circuits featuring EcoSiC™ brand SiC molded modules "HSDIP20", "DOT-247", and "TRCDRIVE pack™" on ROHM’s website. Designers can use the data provided in these reference designs to create the drive circuit boards. When combined with ROHM's SiC modules, these designs help reduce the person-hours required for device evaluation.　　In high power conversion circuits, while SiC power devices contribute to higher efficiency and reliability, they can increase the workload associated with peripheral circuit and thermal design. The reference designs released by ROHM support output power levels up to the 300kW class, facilitating the adoption of SiC modules across a wide range of automotive and industrial applications.　　Three types of SiC modules compatible with these reference designs are already available for purchase through online distributors such as DigiKey and Farnell.　　About Reference Designs　　These reference designs are intended for users to utilize the publicly released design data. If you would like to obtain a reference design board or evaluation kit, please contact a sales representative or visit the contact page on ROHM’s website. (Quantities are limited.)　　Regarding Online Sales of SiC ModulesDetails of SiC modules currently available through online distributors can be found below.　　New SiC Molded Modules Now Available for Online Purchase!　　Simulation SupportWe also provide various support resources to facilitate quick evaluation and implementation of our products. ROHM’s comprehensive solutions, including simulation and thermal design support, can provide valuable assistance in component selection.　　Various design data related to the evaluation boards can be downloaded from their respective reference design page, while the product information for SiC modules compatible with the reference designs can be accessed from each product page as well.　　Additionally, the ROHM Solution Simulator, a simulation tool enabling system-level verification from the component selection stage, is available on ROHM’s website.　　HSDIP20: Reference Design / ROHM Solution Simulator / LTspice® Circuit ModelDOT-247: Reference Design / ROHM Solution Simulator / LTspice® Circuit ModelTRCDRIVE pack™: Reference Design　　Other Reference DesignsIn addition to those introduced in this release, we offer numerous reference designs that contribute to reduced design effort for users. More details are available through the link below.　　Reference Design / Application Evaluation Kit　　Related InformationNews Release (HSDIP20)　　ROHM Develops New High Power Density SiC Power ModulesNews Release (DOT-247)　　ROHM Launches 2-in-1 SiC Molded Module “DOT-247”News Release (TRCDRIVE pack™)　　ROHM’s New TRCDRIVE pack™ with 2-in-1 SiC Molded Module: Significantly Reduces the Size of xEV Inverters　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.・TRCDRIVE pack™ and EcoSiC™ are trademarks or registered trademarks of ROHM Co., Ltd.・LTspice® is a registered trademark of Analog Devices, Inc.When using third-party trademarks, please adhere to the usage guidelines specified by the rights holder.
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Release time：2026-03-18 11:35 reading：520 Continue reading>>
BIWIN Built-in BGA SSD Plus Mini SSD Make Robots Smarter, Easier to Use, and Longer-Lasting
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BIWIN Built-in BGA SSD Plus Mini SSD Make Robots Smarter, Easier to Use, and Longer-Lasting

　　With the maturation of on-device AI computing, multimodal perception fusion, and reinforcement learning frameworks, robots are evolving from being merely reactive to becoming truly adaptive, with requirements of accumulating experience to achieve autonomous evolution, far beyond just executing commands.　　AI models are growing larger.What to do when data loading is too slow and affects decision-making?　　Devices are becoming increasingly compact, with every bit of internal space at a premium. How to balance tiny size with high-performance transmission?　　Training data keeps piling up, but memorycapacity isn’t enough and can’t be upgraded?　　Conventional embedded storage solutions (such as UFS, eMMC, M.2 SSD, MicroSD cards) are limited by trade-offs among performance, form factor, and scalability, making them insufficient for the evolving demands of humanoid robotics handling sustained high-load operation, long lifecycle, high system integration, and incremental learning.　　BIWIN BGA SSD, with its superior performance, compact form factor and excellent shock-resistance, has become one of the preferred solutions for robots; Mini SSD, positioned as an expandable storage choice with superb upgradability and flexibility, strikes a perfect balance between high performance and compact package. The combination of the built-in BGA SSD plus expandable Mini SSD constructs a new integrated storage architecture, working as a complete solution to provide stability, expandability, and systemic efficiency for intelligent robots.　　Built-in BGA SSD + External Mini SSD　　Supporting high-frequency data writes for advanced perception and decision-making　　The “brain” of a humanoid robot—the core computing motherboard—is the hardware hub for advanced perception, cognitive reasoning, and autonomous decision-making. Relying on high-performance AI computing chips, it runs multimodal large models and processes massive sensor data in real time to understand environments and plan tasks. This process demands fast and reliable storage for the operating system.　　BIWIN BGA SSD uses a PCIe 4.0 ×4 interface, delivering sequential read speeds up to 7350 MB/s and capacities up to 2TB, enabling “second-level” boot times for the OS and AI models.　　Robots operate under write-intensive workloads that far exceed typical consumer SSD applications. In some high-load systems, daily write volumes can reach 300 GB. Once the initial onboard storage (such as UFS or fixed SSD) becomes saturated, there’s no room left for ongoing data feeding and model iteration.　　Designed for effortless scalability, BIWIN Mini SSD features a SIM-card-style, slot-in design that enables a true “plug-and-play” experience. No disassembly or specialized tools are required to add up to 2 TB of high-speed storage (with higher capacities planned), ensuring long-term data accumulation, incremental learning, and intelligent evolution for robotic systems.　　While achieving extreme miniaturization and large capacity, BIWIN Mini SSD also delivers high-performance transfer rates. Equipped with a PCIe 4.0 ×2 interface, its read/write speeds reach up to 3700 MB/s and 3400 MB/s respectively, and future seamless upgrades to higher-performance versions (such as PCIe 5.0) are supported.　　SIM-card-sized, as light as 1g　　Saving device space and reducing weight　　As humanoid robots move toward practical deployment, lightweight design is not just about “shedding weight”; it’s more about simplifying mechanical structures, lowering manufacturing costs, improving mobility, and expanding application scenarios. As an essential hardware component, the size and weight of memory module directly impact overall device design.　　Both the BIWIN BGA SSD and Mini SSD feature a coin-sized footprint with an ultra-slim thickness of just 1.4 mm. The Mini SSD weighs as little as 1 g and can be directly inserted into a pre-designed socket, significantly reducing constraints on mechanical layout and overall system weight. For humanoid robots that demand high dynamic performance and extended battery life, BIWIN BGA SSD and Mini SSD deliver a “minimal physical presence” while enabling a “lightweight system design”—resulting in more compact architectures and greater motion agility.　　Dual Storage, Reshaping Industry Cooperation　　Safeguarding the Full Lifecycle Storage Needs of Robots　　Mini SSD, defined as an expandable memory solution, goes far beyond its storage function; its design concepts of modularization and standardization bring a brand-new product architecture mindset to intelligent terminal industries such as robots and notebooks.　　Manufacturer Enablement: Simplified Design, Faster Iteration　　BIWIN delivers a Mini SSD + socket solution based on a modular integration approach, enabling device manufacturers to optimize internal system layouts, reduce form-factor constraints, and develop thinner, lighter end products with clear differentiated competitiveness.　　The host-side socket offers strong compatibility across multiple capacity SKUs, requiring minimal hardware changes. This significantly lowers development effort, integration complexity, and overall system cost for device manufacturers.　　User Value: Plug-and-Play, Maximum Flexibility　　Storage expansion or replacement can be completed on-site without tools or specialized expertise. Designed for repeated, reliable insertion and removal, the solution allows end users to easily expand or swap TB-class storage, delivering a flexible and efficient storage experience.　　When paired with BIWIN’s in-house RD510 card reader (USB4.0 Type-C), users gain high-performance, portable storage for mobile productivity, content creation, and other data-intensive scenarios.　　Mini SSD has already entered mass production and is now integrated into multiple intelligent devices, including the OneXPlayer X1 Air, APEX, Super X, and GPD Win 5. It is also officially available for purchase in the consumer market.　　Since its debut, Mini SSD has been validated by several international honors, consisting of “Best Inventions of 2025” from TIME, “Best-in-Show” from Embedded World 2025, and “2026 CES Picks Awards” in the TWICE category. And BIWIN is also recognized as a winner of 2025 “China Chip” Outstanding Supporting Service Enterprise by right of this new innovation.　　Currently, BIWIN is collaborating with multiple SoC platforms and terminal brands to jointly promote Mini SSD interface specifications and ecosystem standards, accelerating its large-scale adoption in cutting-edge fields such as AI terminals and humanoid robots.
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Release time：2026-02-06 17:47 reading：5918 Continue reading>>
ROHM’s New LDO Regulators with 500mA Output Current Achieving Stable Operation Even with Ultra-small Capacitors to Expand Design Flexibility for High-current Applications
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ROHM’s New LDO Regulators with 500mA Output Current Achieving Stable Operation Even with Ultra-small Capacitors to Expand Design Flexibility for High-current Applications

　　ROHM has developed the “BD9xxN5 Series” of LDO regulator ICs with 500mA output current, featuring its proprietary ultra-stable control technology “Nano Cap™”. This series comprises 18 products designed for 12V/24V primary power supply applications used in automotive equipment, industrial equipment, and communication infrastructure.　　In recent years, electronic devices have demanded higher density in smaller form factors at the same time. To meet this demand and achieve space savings and design flexibility, power supply ICs must be capable of stable operation even with small-capacity capacitors. However, achieving such performance with output capacitors of 1µF or less has been technically difficult.　　To address this challenge, ROHM developed the “BD9xxN1 Series” LDO regulator (150mA output current) in 2022, incorporating its proprietary ultra-stable control technology, “Nano Cap™”. This innovation enables stable operation with output capacitors as small as 100nF, earning widespread adoption across numerous applications.　　The newly developed BD9xxN5 Series builds on the success of the BD9xxN1 Series by increasing the output current to 500mA – more than three times higher than before – significantly broadening its suitability for applications requiring higher power. In addition, very low output voltage ripple of approximately 250mV (with load current variation of 1mA to 500mA within 1µs) is achieved with a small output capacitance of just 470nF (typical). Beyond standard small MLCCs (multi-layer ceramic capacitors) in the range of several µF and large-capacity electrolytic capacitors, it also supports ultra-small MLCCs, such as the 0603M size (0.6mm × 0.3mm), with capacities below 1µF – where stability was previously difficult to achieve. This contributes to space saving as well as greater flexibility in component selection.　　Furthermore, high-precision SPICE models, “ROHM Real Model” are provided for accurate simulation and can be downloaded from the ROHM official website.　　SPICE Models: BD900N5xxx-C BD933N5xxxx-C BD950N5xxxx-C　　ROHM will continue to contribute to the high performance, miniaturization, and high reliability of electronic devices by further expanding its Nano Cap™ technology-equipped LDO series.　　Application Examples　　Automotive Equipment　　● Powertrain system power supplies for fuel injection systems (FI) and tire pressure monitoring systems (TPMS)● Body system power supplies for body control modules (BCM)● Infotainment system power supplies for clusters ad head-up displays (HUD), etc.Industrial Equipment　　● Power supplies for controllers like Programmable Logic Controllers (PLC), Remote Terminal Units (RTU), and industrial gateways● High-precision LDOs for analog loads and sensors measuring temperature, pressure, flow rate, etc.● Power supplies for monitoring and control panels in disaster prevention systems, access control systems and building automation.● Standby power supplies for Human-Machine Interfaces (HMI) and panel equipment, etc.Consumer Electronics　　● Power supplies for control boards in refrigerators, dishwashers, air conditioners, etc.● Power supplies for home appliances like thermostats and doorbells● Power supplies for constant power applications in home security and network equipment, etc.　　What is Nano Cap™ Technology?　　Nano Cap™ refers to ultra-stable control technology achieved by combining advanced analog expertise covering circuit design, processes, and layout utilizing ROHM’s vertically integrated production system. Stable control eliminates the problem of unstable operation related to capacitors in analog circuits, contributing to a reduction in design resources for a wide range of applications in automotive, industrial equipment, consumer, and other fields.　　Terminology　　Primary　　In a power supply circuit, the side in charge of 1st stage conversion from a power source such as a battery is called the primary and the side responsible for 2nd stage conversion is referred to as the secondary.　　LDO Regulator (Low Drop Out Regulator / Low Saturation Regulator)　　A type of power supply IC that converts between two different DC voltage levels. Falls under the category of linear regulator (where the input/output voltages operate linearly) characterized by a small input-output voltage difference. Compared to DC-DC converter ICs (switching regulators), LDOs feature a simpler circuit configuration and lower noise.　　ROHM Real Model　　A high-accuracy simulation model that make it possible to also achieve a perfect match between the actual IC and simulation values utilizing ROHM’s proprietary model-based technology.
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Release time：2026-01-27 13:47 reading：607 Continue reading>>

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