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Apple A22 Pro May Adopt 1.4nm in 2028; TSMC Remains Primary Supplier, Intel Reportedly Considered

　　Apple is expected to use TSMC’s 2nm for its A20 and A20 Pro chips, but industry discussions are already shifting to the A22 Pro and a potential move to 1.4nm. According to Bloomberg, Apple is expected to adopt a 1.4nm process for the A22 Pro, which is slated for high-end iPhone models in 2028. While TSMC is expected to remain Apple’s primary manufacturing partner, the report notes that the company is also evaluating Intel as a potential secondary production source.　　Based on the reported timeline, the A21 Pro is expected to remain on TSMC’s 2nm, potentially transitioning to the enhanced N2P variant, which offers incremental improvements over N2, according to Wccftech.　　Wccftech also notes that costs could rise significantly, with TSMC’s 1.4nm wafers estimated to cost around US$45,000 each. As a result, the report suggests that only the A22 Pro, rather than the standard A22, will be manufactured on the 1.4nm node.　　As noted by MacRumors, current rumors suggest Intel could manufacture lower-end chips for products such as the iPad and Mac. At the same time, Intel CEO Lip-Bu Tan is seeking to revive the company’s foundry business by focusing on leading-edge nodes. According to TechPowerUp, Intel expects its 14A node to enter risk production in 2028, followed by high-volume manufacturing in 2029.　　Beyond the possibility of Apple adopting TSMC’s 1.4nm node for its A22 chips, the company is reportedly preparing three major product launches for late 2027. According to 9to5Mac, citing Bloomberg, these include a 20th-anniversary iPhone featuring a nearly edge-to-edge display and curved glass that wraps around the sides, a second-generation foldable iPhone, and AirPods equipped with built-in cameras.　　TSMC’s A14 Roadmap Takes Shape　　TSMC has been accelerating construction of its 1.4nm fab at the Central Taiwan Science Park. According to Economic Daily News, foundation piling for the first phase has largely been completed, with progress reportedly ahead of schedule. Trial production could begin as early as 3Q27, with mass production targeted for the second half of 2028.　　Compared with N2, A14 is expected to deliver a 10–15% performance improvement at the same power level, or reduce power consumption by 25–30% at the same performance level, while increasing logic density by more than 20%, according to TSMC.

Key word：

Apple

Release time：2026-06-18 10:15 reading：229 Continue reading>>

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SK hynix Reportedly to Double DRAM Capacity to 1M Monthly Wafers by 2030, Speeds Yongin Expansion

　　TrendForce　　SK hynix is reportedly preparing a major DRAM capacity expansion. According to The Elec, the company has shared plans with key suppliers to nearly double its DRAM wafer production capacity by 2030–2031 from current levels. The plan aligns with comments made by SK Group Chairman Chey Tae-won at Computex 2026, where he said the company would “double overall wafer production capacity within five years at full speed.”　　The report says SK hynix aims to raise monthly DRAM wafer capacity from about 550,000 wafers today to roughly 1 million wafers by 2030. The current figure includes around 200,000 wafers per month from its Wuxi fab in China.　　Much of the expansion will be centered on the Yongin Semiconductor Cluster. According to the report, SK hynix plans to divide its first Yongin fab into six cleanrooms and has moved up the first equipment installation schedule from May 2027 to February 2027. The fab is expected to add 360,000 wafers per month of DRAM capacity by the first half of 2030.　　SK hynix is also expanding its M15X fab in Cheongju. The report says the facility is scheduled to begin operations in the second half of 2026 with an initial capacity of 40,000 wafers per month, rising to about 80,000 wafers per month in 2027.　　Combined with the additional output from Yongin, SK hynix’s total DRAM wafer input capacity could approach 1 million wafers per month between 2030 and 2031, according to the report.　　Notably, all newly added capacity is currently designated for DRAM production, the report notes. For NAND flash, SK hynix is expected to focus on technology upgrades, such as increasing layer counts, rather than significant capacity expansion.　　Equipment Suppliers See Near-Term Gains, but Remain Cautious　　The expansion of the Yongin Semiconductor Cluster is drawing a growing number of semiconductor equipment and materials suppliers. According to iNews24, equipment and materials suppliers continue to move into the Yongin Semiconductor Cluster. South Korean materials, parts, and equipment firms, along with ASML, Lam Research, and Tokyo Electron Korea, have either relocated or are in the process of moving in.　　However, The Elec notes that suppliers remain cautious about execution given the scale and pace of the expansion plan. Supplier sources cited by the report said the increased investment is expected to provide a meaningful near-term boost for equipment and materials vendors, though achieving the full expansion target will ultimately depend on whether market demand remains strong enough to support it.　　Samsung Also Accelerating DRAM Expansion　　As for Samsung, according to Digital Daily, Samsung Electronics is accelerating DRAM capacity expansion at its P4 fab in Pyeongtaek by bringing forward its investment schedule. The report says Samsung’s DRAM investment next year could increase by roughly 10,000 wafers per month above previous estimates. Some industry observers also expect Samsung to begin issuing purchase orders for the P5 line from the second quarter of next year, potentially supporting investment equivalent to 150,000 wafers per month in 2027.

Key word：

SK hynix

Release time：2026-06-08 10:46 reading：517 Continue reading>>

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NVIDIA Enters PC Market with RTX Spark Featuring MediaTek-Co-Designed N1X CPU on TSMC 3nm

　　As traditional CPU leaders such as Intel push further into the AI accelerator market, NVIDIA is moving in the opposite direction—leveraging its dominance in AI computing to expand into the PC processor arena. At GTC Taipei on June 1, CEO Jensen Huang unveiled the NVIDIA RTX Spark, developed in partnership with Microsoft and powered by the new Arm-based N1X processor co-designed with MediaTek, according to NVIDIA and CNBC.　　According to CNBC, the initial rollout will include more than 30 notebook models and 10 desktop systems. RTX Spark-powered devices from Microsoft, Dell, HP, ASUS, Lenovo, and MSI are expected to debut this fall, marking NVIDIA’s first large-scale push into the Windows PC CPU market.　　CNBC adds that the platform combines NVIDIA’s Blackwell GPU architecture with the N1X CPU and 128GB of unified memory, bringing data center-class AI capabilities to personal computers. Notably, the new PC processor will be manufactured using TSMC’s 3nm process, which is currently produced exclusively in Taiwan, according to CNBC.　　More Spec Details　　Interestingly, as noted by The Verge, the flagship RTX Spark mirrors the DGX Spark almost exactly — 20 CPU cores, 6,144 GPU cores, 128GB of LPDDR5X memory — though NVIDIA plans to release leaner, more affordable variants, with some configurations dropping to just 16GB of RAM.　　Meanwhile, NVIDIA has provided additional details on the platform’s performance. According to The Verge, with up to 128GB of unified memory—on par with AMD’s previous-generation Strix Halo—RTX Spark laptops and desktops are also capable of hosting AI agents with up to 120 billion parameters, a capability Microsoft appears eager to integrate into Windows.　　Powered by RTX Spark, NVIDIA claims the system can render a 90GB 3D scene, edit 12K video, or run graphically intensive titles like Indiana Jones and the Great Circle at a smooth 100fps in 1440p—all within a 14mm-thin laptop operating without being plugged into power, the report adds.　　CNBC, citing an NVIDIA spokesperson, reports that RTX Spark is described as being “roughly equivalent” to the company’s flagship RTX 5070 laptop GPU.　　NVIDIA is certainly not the only player eyeing to expand its CPU footprint. As noted by CNBC, Apple now designs its own Arm-based processors for Mac computers, having rolled out a higher-end MacBook lineup powered by its latest M5 chips in March. In the same month, Arm unveiled its first in-house CPU, with Meta reportedly serving as the launch customer for the Arm AGI CPU, according to TechCrunch.

Key word：

NVIDIA

Release time：2026-06-02 10:29 reading：700 Continue reading>>

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SK hynix Introduces iHBM Solution, Targets HBM5 Adoption with 30% Thermal Resistance Reduction

　　As thermal management emerges as a key challenge for HBM, SK hynix has unveiled its iHBM solution, which integrates cooling elements (ICEs) directly into the HBM package. The company plans to adopt the technology in next-generation products, including HBM5, according to its press release.　　According to SK hynix, unlike conventional HBM designs that dissipate heat through the core die, iHBM integrates cooling elements (ICEs), made of thermally conductive, electrically non-conductive silicon-based materials, directly into the D2D PHY between HBM and GPUs, where heat is most concentrated. The company said the technology reduces thermal resistance by 30% and improves operating stability.　　As highlighted by SK hynix, the iHBM solution adopts a structural approach to thermal management by creating an additional heat dissipation path within the package. It also leverages the company’s wafer-level packaging (WLP) process and proven MR-MUF technology to enable stable high-volume manufacturing.　　In addition, its compatibility with existing System-in-Package (SiP) architectures allows customers to adopt the thermal solution with minimal design modifications, SK hynix adds.　　In terms of future roadmap, SK hynix plans to incorporate the iHBM solution into next-generation HBM products, including HBM5, with the goal of improving the stability and efficiency of HPC systems and AI data centers.　　Another Key Technology beyond Hybrid Bonding　　Alongside SK hynix’s latest iHBM solution, hybrid bonding is widely seen as a key approach to addressing heat dissipation challenges in 20-stack HBM, which, as previously reported by The Elec, are expected to become increasingly difficult.　　As explained in the report, hybrid bonding differs from conventional thermo-compression (TC) bonding, which connects chips through soldered micro-bumps. Instead, it bonds dielectric materials such as silicon dioxide (SiO₂) and copper through an annealing process at temperatures of roughly 200°C to 400°C.　　By heating and gradually cooling copper sealed within dielectric layers, thermal expansion and vertical pressure enable direct copper-to-copper diffusion bonding without reaching copper’s melting point, the report notes, adding this approach helps reduce thermal damage to semiconductor circuits while delivering improved thermal and electrical performance.

Key word：

SK hynix

Release time：2026-05-27 10:42 reading：623 Continue reading>>

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NVIDIA Reportedly Plans GPU-Direct Storage for Vera Rubin, Raising Expectations for HBF Beyond HBM

　　As AI models continue to scale, HBM may struggle to meet future memory-capacity demands, prompting industry experts to view GPU-driven storage architectures as a potential next frontier. According to The Elec, NVIDIA and Amazon are reportedly advancing storage architectures that allow GPUs to directly control storage devices such as SSDs. NVIDIA is said to plan the introduction of GPU-Initiated Direct Storage Access (GIDS) starting with its Vera Rubin AI platform, a shift that could accelerate the emergence of high-bandwidth flash (HBF), the report notes.　　Citing Song Ki-hwan, a professor in the Department of System Semiconductor Engineering at Yonsei University, the report explains that GIDS goes beyond existing GPU Direct Storage (GDS) architecture. Under GDS, CPUs issue data requests to storage devices before data is transferred to GPUs. GIDS advances this by allowing GPUs to access storage directly, bypassing CPUs and DRAM.　　Both GIDS and GDS aim to overcome data-transfer bottlenecks tied to traditional von Neumann computing architectures. Microsoft and AMD are also said to be exploring similar approaches. The report, citing Song, adds that traditional data-transfer methods are inefficient because CPUs are structurally limited in thread processing, while GPUs can generate tens of thousands of parallel threads. Song also notes that GPU-HBM data transfer already accounts for roughly half of total system power, strengthening the case for HBF architectures that place ultra-fast NAND closer to GPUs to address future AI bottlenecks.　　GIDS Could Accelerate HBF and Expand NAND’s Role in AI Memory　　The emergence of GIDS could allow NAND storage to take on a larger role in AI memory systems while easing pressure on HBM capacity. As the report notes, this shift would require higher-performance NAND flash capable of keeping pace with GPU processing speeds. One proposed approach is high-bandwidth flash (HBF), which stacks NAND flash vertically in a structure similar to HBM and connects it using through-silicon vias (TSVs).　　The report notes that NAND flash offers roughly 30 times higher bit density than DRAM, enabling far greater memory capacity in a similar footprint. According to Song, combining six HBF units with two HBM units could increase GPU memory capacity more than 16 times, from 192GB to 3,120GB, potentially supporting AI models with parameter sizes around 16 times larger than current architectures.　　Still, NAND flash has endurance limits, typically supporting only around 100,000 write-and-erase cycles versus DRAM’s near-unlimited write capability. As a result, HBF is seen as better suited for storing AI model parameters, which remain largely unchanged during inference and function as read-only workloads.　　Meanwhile, memory makers have also been exploring GPU-driven memory architectures. According to an Edaily report last year, sources said Samsung Electronics is actively researching next-generation high-performance Z-NAND. The company is also developing GIDS technology that would allow GPUs to directly access Z-NAND-based storage devices. If implemented, GPUs would be able to access Z-NAND devices without intermediaries, potentially shortening processing times for AI workloads.

Key word：

NVIDIA

Release time：2026-05-20 11:20 reading：1291 Continue reading>>

Trade news

YC Chem Reportedly First to Supply Glass Substrate Photoresists; Customer Eyes Year-End Mass Production

　　South Korea’s YC Chem has reportedly become the first in the industry to supply photoresists for glass substrates. According to The Elec, sources say the company is supplying i-line photoresist, stripper, and developer materials for glass substrates to a customer after receiving a purchase order (PO) following qualification tests.　　As supply of related materials begins to ramp up, commercialization of glass substrates also appears to be drawing closer, the report notes. Current shipments are intended for the customer’s prototype production, with material supply volumes expected to increase gradually as the customer moves toward mass production from the end of this year.　　The company is also seeking additional customers. According to the report, it is currently in discussions with more than three companies regarding the supply of glass substrate materials. With some firms, sample testing is underway for negative photoresists and glass substrate coating materials.　　YC Chem has also supplied prototype coating materials for glass substrates to customers. These materials are intended to minimize cracking and warpage caused by differences in thermal expansion coefficients (CTE) and thermal conductivity between glass and copper. According to the report, the products are currently undergoing qualification testing.　　The report notes that the coating materials are used in embedding-type glass substrates, which integrate circuits and passive components directly within the glass substrate itself.　　Key Requirements for Photoresists in Glass Substrate Manufacturing　　As the report points out, the glass substrate photoresist supplied by YC Chem is based on i-line technology, which uses a 365-nanometer (nm) mercury lamp wavelength in the lithography process. Notably, the report points out that, unlike extreme ultraviolet (EUV) photoresists used in advanced semiconductor manufacturing, glass substrate production places greater emphasis on thicker film thickness and strong etch resistance.　　In particular, the report states that through-glass via (TGV) processes require strong chemical durability and high etch resistance during hole formation and copper plating. As a result, demand is increasing for longer-wavelength lithography materials such as i-line and krypton fluoride (KrF)-based photoresists.　　In South Korea, Samyang NC Chem is also developing photoresist materials for glass substrates. The report adds that the company has supplied samples to more than two customers and is reportedly aiming for mass production next year.　　As major companies accelerate glass substrate development, securing stable material supplies is becoming increasingly important. A January Chosun Biz report said Absolics is diversifying suppliers by adding a domestic partner for glass substrate photoresists, reducing reliance on Japan’s TOK, while also reviewing process dualization for TGV and plating processes through additional collaborators.

Key word：

YC Chem

Release time：2026-05-18 13:05 reading：829 Continue reading>>

Trade news

Visit NOVOSENSE at PCIM Europe 2026！

　　We warmly invite you to visit NOVOSENSE at PCIM Europe 2026. Discover how NOVOSENSE empowers innovation across automotive electronics, renewable energy & power supply, and industrial control with a comprehensive portfolio of isolators, interfaces, drivers, sensors, signal chain, and power management ICs.　　Date: June 9–11, 2026　　Venue: Nuremberg Exhibition Centre, Germany　　Booth: Hall 4A, Booth 119　　✦ What to Expect ✦　　Functional safety ICs for safety-critical automotive systems　　One-stop body control & automotive lighting solutions　　SerDes and ultrasonic radar IC solutions for smarter mobility　　Technical presentations on high-voltage electric mobility and AI data center power systems　　✦ Highlights Preview ✦　　Functional Safety ICs for Safety-Critical Automotive Systems　　Isolated gate driver NSI6911F — certified by TÜV Rheinland to meet ISO 26262 ASIL D requirements, featuring up to 19A peak drive capability, ±150kV/μs CMTI, an integrated 12-bit isolated ADC, and advanced diagnostic functions for high-voltage applications such as traction inverters, OBCs, and DC-DC converters.　　ASIL B ultrasonic radar ASSP NSUC1800 and LED driver NSL21924FS , reflecting NOVOSENSE's expanding functional safety portfolio across sensors, signal chain, power management, and driver ICs.　　One-Stop Automotive Body Control & Lighting Solutions　　For BCM and ZCU applications, NOVOSENSE offers motor driver products for brushed DC motors, stepper motors, BLDC motors, relays, valves, and solenoids, supporting efficient, precise, and safe motor control.　　For automotive lighting, NOVOSENSE will showcase full-scenario LED driver solutions for ambient lighting, reading lights, headlighting, rear lighting, ISD/ISC lighting, grille lighting, and more, helping create safer, smarter, and more distinctive vehicle lighting experiences.　　Enabling Smarter Mobility with SerDes and Ultrasonic Radar IC Solutions　　SerDes chipset — NLS9116 single-channel serializer and NLS9246 four-channel deserializer, designed for cameras, displays, and domain controllers in ADAS and intelligent cockpit systems.　　AK2 ultrasonic radar ASSP — comprising the NSUC1800 sensor-side chip and NSUC1802 host-side interface conversion chip, providing a turnkey solution for applications such as UPA and APA.　　✦ Keynote Speeches ✦　　Join NOVOSENSE experts at PCIM Europe 2026 for in-depth technical presentations on how advanced semiconductor technologies are addressing the evolving demands of high-voltage electric mobility and AI data center power systems.　　E-Mobility & Energy Storage Stage　　Hall 6, Booth 220　　Topic: Evolution and Challenges of Gate Driver Technology for New Generation of xEV Powertrain System　　Time: June 9, 2026 | 15:25–15:45 (GMT+1)　　Speaker: Timmy Wu　　Topic: Enabling EV High-Voltage Safety with Advanced Isolated Sensing　　Time: June 11, 2026 | 12:05–12:25 (GMT+1)　　Speaker: Lillian Liu　　AI & Data Centers Stage　　Hall 5, Booth 320　　Topic: Power Density Scaling in AI Data Centers: From System Constraints to Semiconductor Device Challenges　　Time: June 9, 2026 | 14:35–14:55 (GMT+1)　　Speaker: Wenzhe Xu

Key word：

NOVOSENSE

Release time：2026-05-14 11:40 reading：990 Continue reading>>

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SMIC Founder Says China May Gain Edge in Niche Chips as 80% of Demand Lies Outside Advanced Nodes

　　As China pushes to strengthen its chip industry, Richard Chang, founder of SMIC, China’s largest foundry, suggests that success in semiconductors is not solely about winning the 2nm or 3nm race, with niche markets potentially emerging as a key competitive advantage for China. According to STAR Market Daily, Chang said that niche markets have become a key breakthrough point for China’s semiconductor industry, adding that advancing in specialized market segments could help strengthen the country’s overall chip capabilities.　　SMIC remains limited to the 7nm node due to its reliance on older DUV lithography equipment. However, Richard Chang’s emphasis on niche markets suggests that the company’s mature-node technologies could still find meaningful opportunities across a range of applications, as noted by Wccftech.　　SMIC Founder Highlights Opportunity Beyond Advanced Nodes　　As noted by STAR Market Daily, Richard Chang argued that semiconductor success should not be defined solely by achieving 3nm or 2nm nodes, describing such thinking as a misconception and highlighting niche markets as a key opportunity for China’s chip industry.　　Chang further noted that advanced nodes account for less than 20% of the global semiconductor market by product volume, while more than 80% of demand comes from mature-node and specialty-process segments. According to Chang, many niche markets still dominated by overseas players could represent key breakthrough opportunities for Chinese semiconductor companies.　　The trend may already be emerging across parts of the supply chain. According to TrendForce, with Taiwanese foundries shifting capacity and raising prices, customers in HV processes and CIS applications are increasingly turning to Chinese foundries for more stable pricing and capacity availability. This order migration has been evident since the second half of 2025, driving strong demand for 90 nm-and-above 12-inch wafers among Chinese players.　　Beyond Large Models: Richard Chang Highlights Edge AI Potential　　In addition, Richard Chang argued that edge AI and scenario-driven applications remain underappreciated opportunities within the broader AI landscape. As STAR Market Daily notes, Chang said sectors such as industrial control, automotive electronics, and wearable devices could create strong demand for application-specific semiconductor solutions, offering startups room to pursue differentiated strategies outside direct competition with global AI giants.

Key word：

SMIC

Release time：2026-05-12 10:24 reading：658 Continue reading>>

Trade news

Apple Reportedly Keeps 2nm 5G Modem Orders with TSMC Amid Intel Cooperation Signals

　　While recent market chatter has focused on a potential shift by Apple between longtime foundry partner TSMC and Intel, the Economic Daily News, citing industry sources, reports that the Cupertino-based company remains heavily dependent on the Taiwanese foundry giant, as it plans to place its entire in-house 5G modem orders with TSMC, leveraging its 2nm process technology.　　The report suggests that Apple’s self-developed 5G modem chips are expected to power future iPhone, iPad, and Apple Watch devices, replacing modems from Qualcomm. The volume used across its product lineup is projected to reach hundreds of millions of units, the report adds.　　Notably, Apple’s iPhone 17 lineup is expected to be the last to ship with Qualcomm Incorporated’s 5G modems, as the company moves toward a full transition to its in-house C2 baseband chip across all iPhone 18 models, according to Wccftech.　　The C2 development builds on Apple’s earlier in-house modem effort. Apple’s C1, first introduced in early 2025 with the iPhone 16e, marked its most complex chip system to date, integrating a 4nm baseband modem and a 7nm transceiver, according to earlier reporting from Reuters. The Economic Daily News further reports that Apple Inc.’s in-house C2 5G modem is expected to add full mmWave support—addressing the Sub-6 GHz limitation of its predecessor—while also incorporating satellite connectivity.　　Supply chain sources cited in the Economic Daily News report say TSMC has already secured foundry orders for Apple’s modem chips. Its back-end testing partner is also reportedly preparing for higher demand, with around 600 test systems being procured, as capacity is set to ramp from 2027.　　Apple’s Chip Tug-of-War: TSMC vs Intel　　Though claims of an Apple order shift to Intel remain unconfirmed, and any such move would not signal a departure from TSMC, cooperation between Apple and Intel appears to be warming. According to The Wall Street Journal, the two companies have reportedly reached a preliminary agreement for Intel to manufacture some of the chips powering Apple devices.　　The two sides have been engaged in intensive talks for more than a year, with a formal deal said to have been hammered out in recent months, the report adds.　　In parallel, Commercial Times reported earlier that Apple is evaluating Intel’s 18A-P process for its M-series chips. Looking further ahead, The New 7 reports that the first Intel-manufactured low-end M-series chips could emerge as early as mid-2027 under contract production, likely targeting entry-level Macs or iPads.　　As highlighted by The Wall Street Journal, Apple’s reported outreach to Intel may reflect growing supply chain pressures, as the Cupertino firm—long TSMC’s top customer—faces tightening access to advanced manufacturing capacity amid surging demand from NVIDIA and other AI chip designers.　　Intel previously played a central role in powering Apple’s Mac lineup, before Apple transitioned in 2020 to its own Arm-based custom chips, the report points out.

Key word：

Apple

Release time：2026-05-11 11:12 reading：768 Continue reading>>

Trade news

TSMC Hints at Potential Further U.S. Expansion; Industry Sources Reportedly See Up to US$250B Investment

　　As TSMC continues expanding its U.S. footprint, comments from Cliff Hou, TSMC Senior Vice President and Deputy Co-COO, have caught industry attention. According to Commercial Times, Hou said at the 2026 SelectUSA Investment Summit that the company “is prepared for growth from any new business opportunities,” remarks the market has interpreted as signaling potential further expansion of TSMC’s U.S. investments. TSMC’s total U.S. investment currently stands at US$165 billion.　　Commercial Times notes that supply chain developments show chip equipment suppliers have also begun establishing U.S. subsidiaries to support TSMC. Industry sources added that TSMC’s total U.S. investment could reach as much as US$250 billion, with the company expected to replicate the Hsinchu Science Park cluster model in Phoenix.　　Meanwhile, Economic Daily News reported that TSMC’s first Arizona fab entered mass production in 4Q24, while its second fab has already been completed and is expected to begin 3nm mass production in the second half of 2027. TSMC previously said construction of its third Arizona fab is already underway, while permits are being sought for a fourth fab and its first advanced packaging facility in the state. The report also noted that TSMC has acquired a second large parcel of land near its existing Arizona site to support future expansion plans.　　Although TSMC’s U.S. fabs are more costly, capacity remains in strong demand, with previous reports indicating that customers had already reserved capacity at all four Arizona fabs, as noted by Economic Daily News. Institutional investors said that, for process technologies below 2nm, TSMC’s related capacity ratio between Taiwan and the U.S. is expected to reach roughly 7:3 by 2030.　　TSMC Reshapes Board Amid Global Expansion　　In addition, TSMC has also recently adjusted its board structure. According to Commercial Times, the company plans to revise its corporate charter by increasing the number of board seats from the current seven to ten directors to nine to twelve, with the proposal set to be discussed at the shareholders’ meeting on June 4.　　The move reflects TSMC’s response to the rapidly changing global business environment and is intended to provide greater flexibility in recruiting directors from diverse professional backgrounds, the report said. It also noted that, as TSMC rapidly expands overseas and continues increasing its U.S. investments, the board will need more members with expertise in international supply chains, geopolitics, and U.S. policy.

Key word：

TSMC

Release time：2026-05-07 13:22 reading：640 Continue reading>>

model	brand	Quote
MC33074DR2G	onsemi
BD71847AMWV-E2	ROHM Semiconductor
CDZVT2R20B	ROHM Semiconductor
TL431ACLPR	Texas Instruments
RB751G-40T2R	ROHM Semiconductor

model	brand	To snap up
BP3621	ROHM Semiconductor
TPS63050YFFR	Texas Instruments
ESR03EZPJ151	ROHM Semiconductor
BU33JA2MNVX-CTL	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
IPZ40N04S5L4R8ATMA1	Infineon Technologies

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