Renesas Announces Establishment of New Subsidiary and Changes as Specified Subsidiary
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Renesas Announces Establishment of New Subsidiary and Changes as Specified Subsidiary

　　Renesas Electronics Corporation (TSE: 6723, "Renesas"), a premier supplier of advanced semiconductor solutions,  announced the establishment of a new subsidiary (the “New Subsidiary”) in the United States as a holding company for its Software & Digitalization business. The New Subsidiary is expected to be classified as a specified subsidiary of Renesas.　　1. Purpose of Establishing the New Subsidiary　　In January 2024, Renesas established a new organization dedicated to software and digitalization, accelerating efforts in these fields. As part of this initiative, Renesas acquired Altium Limited ("Altium", Note) in August 2024 and is working together with Altium as one team to establish an integrated and open “electronics system design and lifecycle management platform” to make electronics design accessible to a broader market to allow more innovation. In January 2025, Altium’s acquisition of Part Analytics, Inc., a supply chain management company, marked another step toward realizing Renesas’ Digitalization Vision.　　To further strengthen and grow its Software & Digitalization business, Renesas plans to establish a holding company as its wholly owned subsidiary in the first quarter ending March 31,2026, to oversee the management of its subsidiaries related to this business. Following the necessary procedures, Renesas intends to consolidate the shares of its Software & Digitalization-related subsidiaries, including Altium, under the New Subsidiary. The New Subsidiary's net assets are expected to exceed 30 percent of Renesas' total equity, and, as a result, it will be treated as a specified subsidiary of Renesas. By centrally managing its Software & Digitalization-related subsidiaries under the New Subsidiary, Renesas aims to enhance governance and operational efficiency, while building a structure that can flexibly respond to future business development and internal resource allocation.　　2. Overview of the Specified Subsidiary　　3. Future Outlook　　There is no material impact on Renesas' consolidated financial results for the fiscal year ending December 31, 2025. Renesas will make an announcement in a timely manner should any matters requiring disclosure arise in the future.　　(Note) Altium Limited has changed its corporate name to Altium Pty Ltd, effective December 12, 2024.
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Release time：2025-07-28 14:40 reading：243 Continue reading>>
<span style='color:red'>SI</span>MCom：A7663E Achieves Key Global Certifications, Enabling Scalable 4G IoT Deployments
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SIMCom：A7663E Achieves Key Global Certifications, Enabling Scalable 4G IoT Deployments

　　As the global demand for LTE Cat 1 modules continues to rise in industrial IoT, asset tracking, and metering applications, SIMCom (as a global leader in IoT communication and solution)'s A7663E stands out with a balanced mix of performance, integration flexibility, and certification readiness. The module has recently secured a comprehensive set of international certifications, including RoHS, REACH, CE (RED) for the European market, Anatel for Brazil, and Cybersecurity compliance, paving the way for faster IoT deployment in regulated global markets.　　The A7663E is built LGA form factor, offering high integration capability while maintaining reliability. It supports LTE-FDD with downlink speeds up to 10 Mbps and uplink up to 5 Mbps, making it suitable for medium-data-rate IoT scenarios that demand efficient wireless performance and long lifecycle support. The inclusion of integrated multi-constellation GNSS (GPS, GLONASS, BeiDou) further enhances its value for location-based applications like asset tracking, smart mobility, telematics, surveillance devices, industrial routers, and remote diagnostics and so on.　　Additionally, A7663E provides a rich set of interfaces to support diverse product architectures. Its software feature set includes FOTA (Firmware Over-The-Air), SSL encryption, and LBS—ensuring devices stay secure and up-to-date throughout their lifecycle. This greatly reduces time-to-market and engineering cost.　　With global compatibility, the A7663E is an ideal LTE Cat 1 solution for IoT developers aiming to scale deployments across multiple regions with confidence.
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Release time：2025-07-24 10:37 reading：301 Continue reading>>
Commercialized the XRCGB_F_C Series In-vehicle Compact Crystal Unit in 2016 Size
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Commercialized the XRCGB_F_C Series In-vehicle Compact Crystal Unit in 2016 Size

　　Murata Manufacturing Co., Ltd. (hereinafter ‘Murata’) commercialized the ‘XRCGB_F_C’ series compact crystal unit (hereinafter ‘this product’) in 2016 size for in-vehicle infotainment (IVI*1) and other automotive applications. Mass production has already begun.　　*1In-Vehicle Infotainment (IVI): An automotive function that provides information and entertainment to the driver and passengers through an IT device mounted on the automobile.　　Most in-vehicle infotainment systems use 3225 size crystal units. In recent years, the growing demand for enhanced functionality in electronic systems—particularly with the integration of ADAS*2 — has led to an increased reliance on electronic components. This trend necessitates the development of even smaller electronic parts. Simultaneously, communications standards for in-vehicle systems are also advancing, which results in an intense wireless traffic of these individual devices. Under these circumstances, signal transmission timing must be accurately synchronized between in-vehicle device ICs in order to correctly receive electric signals on frequencies defined by different communications standards and avoid inter-IC communication errors. This therefore requires high-precision timing devices that generate stable clock signals.*3　　*2ADAS: Advanced Driver Assistance System.　　*3Clock signals: Signals transmitted at a stable cycle with certain intervals.　　To respond to this need, Murata developed this 2016-size product for in-vehicle applications, achieving both smaller size and higher precision thanks to our original packaging technique and design and process optimization. Compared to the 3225 size, the new product achieves about 60% reduction in implementation space, contributing to downsizing the device itself while offering enhanced functionality. This product also features powerful cracking resistance while soldering and is preferred by many customers for in-vehicle applications.　　We will continue to help bring safety and reliability to customers by expanding the use of highly reliable and high-performance crystal units.　　Product characteristics　　Compact 2016 size　　High precision　　Operating temperature 105°C guaranteed　　High resistance to cracks while soldering　　Highly reliable with a low failure rate (particle-less)　　Stable supply　　Lead-free
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Release time：2025-07-23 13:16 reading：244 Continue reading>>
<span style='color:red'>SI</span>MCom Introduces <span style='color:red'>SI</span>M8668 & <span style='color:red'>SI</span>M8666 for Low-Power AI on the Edge
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SIMCom Introduces SIM8668 & SIM8666 for Low-Power AI on the Edge

　　AI has clearly become a key focusacross industries at MWC Shanghai 2025. While high-level and advanced-levelAI computing modules are alreadyadopted in applications like video conferencing, AR/VR, edge computing, and industrial PDAs, the growing diversity of edge applications has created strong demand for entry-level AI solutions that prioritize low power consumption, cost-efficiency, and fast deployment.　　To address the trends, and following the recent launches of its SIM9850 (high-level AI computing module) and SIM9630L-W (advanced-level AI module), SIMCom — a global leader in IoT communication solutions — has introduced two new entry-level AI computing modules: SIM8668 and SIM8666, designed to bring intelligent capabilities to lightweight, energy-efficient edge devices.　　Powered by the RK3568 and RK3566 platforms, both SIM8668 and SIM8666 deliver 1 TOPS of NPU performance and come equipped with a wide range of interfaces—including LVDS, MIPI-DSI, HDMI 2.0, CSI, USB, PCIe, UART, SPI, I2C, and more. These interfaces allow easy connection to cameras, displays, audio, and sensors, enabling rich data collection and smooth human-machine interaction. The integrated NPU supports INT8/INT16 hybrid operations and is compatible with popular AI frameworks such as TensorFlow, PyTorch, MXNet, and Caffe, offering flexibility for deploying a variety of deep learning models.　　These capabilities make SIM8668 and SIM8666 ideal for edge AI applications like like face recognition, license plate detection, seatbelt monitoring, people counting, helmet detection, e-bike identification, and safety alerts—all while maintaining low power consumption and cost efficiency for smart, connected devices.　　Specifically, the SIM8668 features a 2.0GHz CPU, ARM Mali-G52 GPU, and an 8M ISP with HDR support. It also supports dual independent displays, suitable for advanced multimedia and multitasking needs. The SIM8666, on the other hand, is designed for cost-sensitive AI applications with a 1.8GHz CPU, the same Mali-G52 GPU, and support for single or mirrored dual display output. It also includes a touchscreen interface (I2C TP), offering enhanced flexibility for HMI (Human Machine Interface) scenarios in both consumer and industrial devices.　　With their compact design and built-in connectivity, SIM8668 and SIM8666 help customers accelerate product development and reduce time-to-market.These modules are well suited for a variety of low-power edge AI applications, including home automation, self-service kiosks, digital signage, audio and video streaming devices, dashcams, and HMI systems.　　By launching the SIM8668 and SIM8666 during MWC Shanghai, SIMCom demonstrates its continued commitment to expanding the accessibility of AI—offering practical, scalable solutions to enable smarter edge devices across a wider range of industries.
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Release time：2025-07-21 14:49 reading：363 Continue reading>>
<span style='color:red'>SI</span>MCom Strengthens Japan Market Presence with <span style='color:red'>SI</span>M7672JP Certifications
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SIMCom Strengthens Japan Market Presence with SIM7672JP Certifications

　　SIMCom, a global leader in IoT communication solutions, announces that its SIM7672JP—powered by the Qualcomm® 216 LTE IoT modem—has successfully obtained key certifications for the Japanese market, including JATE, TELEC, and NTT Docomo Technical Approval (TA). Certification with KDDI is currently ongoing.　　These approvals mark a significant step in SIMCom's strategic expansion into Japan, one of the world’s most advanced and regulated IoT markets.　　Designed to meet Japan's stringent regulatory and operator requirements, the SIM7672JP offers reliable and cost-effective LTE Cat.1 bis connectivity tailored for a wide range of IoT applications. It has already been validated by IIJ (Internet Initiative Japan) and is compatible with the NTT Docomo network, ensuring strong local integration.　　With support for Power Saving Mode (PSM), the SIM7672JP enables long-term, low-power deployments—making it an ideal solution for diverse sectors such as automotive and transport (fleet management, UBI, DVR, public safety), energy and industrial (smart grids, industrial equipment, rugged tablets, infrastructure, pipeline monitoring), consumer and enterprise (payment systems, POS, networking, retail, surveillance), and residential and healthcare (home automation, security, wearables, remote medical devices).　　The SIM7672JP is now in mass production and available for Japanese market. With the latest Japanese certifications, SIMCom is well-positioned to deepen its collaboration with local partners and accelerate the deployment of reliable cellular IoT solutions throughout Japan. SIMCom remains committed to empowering the Japanese IoT ecosystem—with certified, future-proof LTE Cat.1 bis modules that deliver connectivity, efficiency, and compliance.
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Release time：2025-07-21 14:44 reading：320 Continue reading>>
Renesas Debuts Best-in-Class MCUs Optimized for Single-Motor Applications Including Power Tools, Home Appliances and More
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Renesas Debuts Best-in-Class MCUs Optimized for Single-Motor Applications Including Power Tools, Home Appliances and More

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions,introduced the RA2T1 microcontroller (MCU) group based on the Arm® Cortex®-M23 processor optimized for motor control systems in July9. RA2T1 devices are specifically designed for single-motor applications such as fans, power tools, vacuum cleaners, refrigerators, printers, hair dryers and many more.　　Feature Set Optimized for Motor Control　　The new RA2T1 devices include a number of features designed to enhance motor control function, specifically in single-motor systems. One of the notable features is a 3-channel S&H function that simultaneously detects the 3-phase current values of Brushless DC (BLDC) motors. This method provides superior control accuracy as opposed to sequential measurement methods. The RA2T1 MCUs also offer complementary Pulse Width Modulation (PWM) function of the timer, which enables automatic insertion of dead time and generation of an asymmetric PWM. This function is optimized for inverter drive, which facilitates control algorithm implementation.　　The RA2T1 devices offer safety features that are critical in motor control applications. They provide a Port Output Enable function and a high-speed comparator that work together to quickly shut off the PWM output when an overcurrent is detected. The shutdown state can be selected according to the inverter specifications.　　Renesas Leadership in Embedded Processing for Motor Control　　Renesas has shipped motor-control specific MCUs for over 20 years. The company ships over 230 million motor control embedded processors per year to thousands of customers worldwide. In addition to multiple RA MCU groups, Renesas offers motor-control specific devices in its 32-bit RX Family, its 16-bit RL78 MCUs and its 64-bit RZ MPUs.　　“Customers have trusted Renesas motor control solutions for many years across thousands of systems,” said Daryl Khoo, Vice President of Embedded Processing Marketing Division at Renesas. “The RA2T1 MCUs enhance our leadership in this area with market-leading technology, low-power operation, and legendary Renesas quality and safety standards for single-motor systems.”　　Key Features of the RA2T1 Group MCUs　　Core: 64 MHz Arm Cortex-M23　　Memory: 64KB Flash, 8KB SRAM, 2KB Data Flash　　Analog Peripherals: 12-bit ADC with 3-channel Sample and Hold, temperature sensor, internal reference voltage, 2-channel high-speed comparators　　System: High-, mid- and low-speed On-chip Oscillators; clock output; power-on reset; voltage detection; data transfer, event link and interrupt controllers; low-power modes　　Safety: PWM forced shutdown, SRAM parity error check, ADC self-diagnosis, clock frequency accuracy measurement, illegal memory access detection　　Operating Temperature Range: Ta = -40°C to 125°C　　Operating Voltage: 1.6V to 5.5V　　Packages: 48LQFP, 32-LQFP, 48-QFN, 32-QFN, 24-QFN (4mm x 4mm)　　The new RA2T1 Group MCUs are supported by Renesas’ Flexible Software Package (FSP). The FSP enables faster application development by providing all the infrastructure software needed, including multiple RTOS, BSP, peripheral drivers, middleware, connectivity, networking, and security stacks as well as reference software to build complex AI, motor control and cloud solutions. It allows customers to integrate their own legacy code and choice of RTOS with FSP, thus providing full flexibility in application development. Using the FSP will ease migration of motor control designs to other RA Series devices.　　Winning Combinations　　Renesas has combined the new RA2T1 Group MCUs with numerous compatible devices from its portfolio to offer a wide array of Winning Combinations, including Portable Power Tools, Smart BLDC Ceiling Fan, Cordless Vacuum Cleaner, Cordless Leaf Blower. Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.　　Availability　　The RA2T1 Group MCUs are available now, along with the FSP software. The new MCUs are supported in Renesas’ Flexible Motor Control development kit that enables easy evaluation of motor control using permanent magnet synchronous motors (brushless DC motors), and the Renesas Motor Workbench development tool. This development kit offers a common design platform with numerous Renesas motor control MCUs from the RA and RX families, enabling migration of IP across numerous devices. Information on all these offerings is available at renesas.com/RA2T1. Samples and kits can be ordered either on the Renesas website or through distributors.　　Renesas MCU Leadership　　A world leader in MCUs, Renesas ships more than 3.5 billion units per year, with approximately 50% of shipments serving the automotive industry, and the remainder supporting industrial and Internet of Things applications as well as data center and communications infrastructure. Renesas has the broadest portfolio of 8-, 16- and 32-bit devices, delivering unmatched quality and efficiency with exceptional performance. As a trusted supplier, Renesas has decades of experience designing smart, secure MCUs, backed by a dual-source production model, the industry’s most advanced MCU process technology and a vast network of more than 250 ecosystem partners. For more information about Renesas MCUs, visit renesas.com/MCUs.
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Release time：2025-07-14 14:38 reading：384 Continue reading>>
NOVOSENSE Launches High-Performance 2-Wire Hall Switch MT72xx Series: Compact Design with System-Level Reliability
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NOVOSENSE Launches High-Performance 2-Wire Hall Switch MT72xx Series: Compact Design with System-Level Reliability

　　NOVOSENSE Microelectronics ("NOVOSENSE") has launched the MT72xx series, 2-wire current output Hall switches. The switches feature superior EMC performance, multiple sensing polarity options, and highly integrated design, achieving ASIL-A functional safety certification and full compliance with AEC-Q100 Grade 0 standards. Designed for long-wiring scenarios in vehicle body electronics and domain controller systems, the MT72xx series provides optimized solutions for seatbelt buckle detection, window lift motor control, and other automotive applications.　　Addressing Long Wiring Harness Challenges in Automotive　　With rapid advancement of automotive intelligence and electrification, increasingly complex vehicle body functions and highly integrated domain controllers have significantly extended wiring harnesses between sensors and control units. This introduces critical challenges including elevated signal interference risks, increased costs, and compromised system reliability.　　NOVOSENSE's MT72xx series delivers robust signal integrity while effectively reducing wiring complexity and lowering harness costs. Designed for long-wiring scenarios such as door lock detection, anti-pinch window control, power tailgate position sensing, seat adjustment, and seatbelt buckle detection, these devices provide stable current output with superior anti-interference capabilities, maintaining signal reliability even in extended wiring conditions.　　High Integration & Robustness for Automotive-Grade Standards　　Engineered for harsh automotive environments with strong EMI interference, the MT72xx series integrates a 100nF(only TO92S package)capacitor to enhance EMC/ESD performance, simplify peripheral configuration, and optimize BOM space, enabling flexible system architecture design. Compliant with AEC-Q100 Grade 0, the devices ensure long-term stability under extreme high-temperature conditions.　　Featuring multiple sensing polarity options (unipolar, omnipolar, latch) and adjustable sensitivity thresholds, the MT72xx series offers design flexibility to accommodate diverse magnet solutions and vehicle architectures, streamlining development and debugging processes.　　Comprehensive Resources to Accelerate Time-to-Market　　To expedite customer development, NOVOSENSEN provides dedicated MT72xx demo boards and magnetic simulation services. These resources enable rapid device validation, magnet solution matching, and cost-effective debugging, significantly shortening product deployment cycles.
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Release time：2025-07-14 14:25 reading：399 Continue reading>>
Murata Begins World’s First Mass Production of 47µF Multilayer Ceramic Capacitor in 0402-inch Size
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Murata Begins World’s First Mass Production of 47µF Multilayer Ceramic Capacitor in 0402-inch Size

　　Murata Manufacturing Co., Ltd. has begun the world’s first mass production of the 0402-inch size (1.0 × 0.5 mm) multilayer ceramic capacitors (MLCC) with a capacitance of 47µF*. The new product line, available in two variants with different temperature characteristics, is designed to advance MLCC miniaturization and enhance customer system performance.　　In recent years, high-performance IT solutions, such as those used in AI servers and data centers, have seen rapid growth. Due to the often high component density demanded by these devices, optimized component placement within limited PCB areas is paramount. As a result, there is increasing demand for capacitors that offer both miniaturization and higher capacitance, along with high reliability under high-temperature conditions caused by heat generated from PCBs and integrated circuits (ICs).　　In response to these requirements, Murata has utilized its proprietary technologies in ceramic dielectric layers and internal electrode miniaturization to facilitate the world’s first mass production of this innovative 47µF product in the compact 0402-inch size. Compared to Murata’s conventional 0603-inch size product with the same capacitance, this new capacitor reduces mounting area by approximately 60%. Additionally, it delivers about 2.1 times the capacitance of Murata’s previous 22µF product in the same 0402-inch size.　　The MLCC is available in two variants – the X5R (EIA) GRM158R60E476ME01 with an operating temperature range of -55 to +85°C, and the X6S (EIA) GRM158C80E476ME01 with an operating temperature range of -55 to +105°C. The ability to operate in environments up to 105°C, makes the X6S variant well-suited for placement near ICs, thereby contributing to improved device performance and integration. Both devices feature a ±20% tolerance and rated voltage of 2.5Vdc.　　Murata is committed to advancing miniaturized capacitors with higher capacitance and improved high-temperature reliability to meet evolving market demands. These innovations not only support the ongoing miniaturization and functional enhancement of electronic devices but also contribute to lower material usage and increased production efficiency per unit, ultimately helping reduce power consumption at Murata’s factories and lessen environmental impact.　　For inquiries regarding this product, please contact us.　　Notes　　*Based on Murata research as of July 9, 2025.
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Release time：2025-07-10 14:13 reading：342 Continue reading>>
ROHM Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed
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ROHM Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed

　　ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance.　　Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is critical. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement.　　The new L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase.　　As of April 2025, ROHM has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.　　The models can be downloaded from the Models & Tools section on individual 4th Generation SiC MOSFET product pages　　Related Information　　• White Papers　　• Design Model Support Page　　• SiC MOSFET Technical Documentation　　Looking ahead, ROHM remains committed to advancing simulation technology to enable the design for higher-performance and more efficient applications, driving continued innovation in power conversion systems.
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Release time：2025-07-10 13:36 reading：327 Continue reading>>
ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications
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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.
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Release time：2025-07-08 17:04 reading：335 Continue reading>>

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