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<span style='color:red'>SK hynix</span> Reportedly Pulls Forward HBM4E Sample Timeline, Eyeing June–July Shipments to Key Customers

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SK hynix Reportedly Pulls Forward HBM4E Sample Timeline, Eyeing June–July Shipments to Key Customers

　　Samsung announced the start of HBM4E sampling in late May and later unveiled an HBM5 mock-up for the first time at COMPUTEX 2026. Against this backdrop, rival SK hynix is also stepping up its next-generation HBM push, with South Korean media outlet Newsis reporting that the memory giant has secured positive results in HBM4E development and is nearing sample shipments to key customers.　　Notably, certain analysts cited by the report expect SK hynix to begin HBM4E sample shipments as early as this month, or by July at the latest. The company had previously guided that sampling would start in the second half of the year, suggesting the timeline is now being pulled forward, the report adds.　　As Newsis notes, next-generation HBM is highly customized for customers, and earlier sample shipments enable faster performance validation and optimization—ultimately translating into a strategic edge in securing final mass production orders.　　Beyond sampling timelines, broader supply and pricing dynamics are also shifting, which may give early movers key advantages. According to TrendForce, as the market enters 2Q26, negotiations between buyers and suppliers have shifted toward HBM4 supply agreements for 2027, which is expected to become the market’s mainstream project generation. The shift underscores how both Samsung and SK hynix are accelerating HBM4 and HBM4E development amid tightening market cycles.　　SK hynix HBM4E Specs Under Spotlight　　As highlighted by Newsis, SK hynix’s HBM4E is likely to be used in NVIDIA’s next-generation AI accelerator, Rubin Ultra, set for release next year. In line with this platform upgrade, TrendForce notes that NVIDIA’s Rubin Ultra is expected to further increase HBM capacity per GPU to 384GB.　　Against this backdrop of rising system-level requirements, HBM4E specifications are also being pushed higher across the stack. According to Newsis, SK hynix’s HBM4E core die is expected to adopt a 1c DRAM process node, compared with the 1b node used in HBM4. In addition, The Chosun Daily previously reported that the company is likely to use TSMC’s 3nm process for its HBM4E logic die, aiming to challenge Samsung’s 4nm design.　　On the competitive front, Samsung Electronics completed the world’s first shipment of HBM4E samples in late May, supplying them to NVIDIA, according to Yonhap News.　　Samsung’s HBM4E combines a 1c DRAM core die with a 4nm foundry-based base die, delivering speeds of up to 14Gbps per pin and peaking at 16Gbps, equivalent to a maximum bandwidth of 4TB/s, the report notes.

Key word：

SK hynix

Release time：2026-06-16 10:43 reading：307 Continue reading>>

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SK hynix Reportedly to Double DRAM Capacity to 1M Monthly Wafers by 2030, Speeds Yongin Expansion

　　TrendForce　　SK hynix is reportedly preparing a major DRAM capacity expansion. According to The Elec, the company has shared plans with key suppliers to nearly double its DRAM wafer production capacity by 2030–2031 from current levels. The plan aligns with comments made by SK Group Chairman Chey Tae-won at Computex 2026, where he said the company would “double overall wafer production capacity within five years at full speed.”　　The report says SK hynix aims to raise monthly DRAM wafer capacity from about 550,000 wafers today to roughly 1 million wafers by 2030. The current figure includes around 200,000 wafers per month from its Wuxi fab in China.　　Much of the expansion will be centered on the Yongin Semiconductor Cluster. According to the report, SK hynix plans to divide its first Yongin fab into six cleanrooms and has moved up the first equipment installation schedule from May 2027 to February 2027. The fab is expected to add 360,000 wafers per month of DRAM capacity by the first half of 2030.　　SK hynix is also expanding its M15X fab in Cheongju. The report says the facility is scheduled to begin operations in the second half of 2026 with an initial capacity of 40,000 wafers per month, rising to about 80,000 wafers per month in 2027.　　Combined with the additional output from Yongin, SK hynix’s total DRAM wafer input capacity could approach 1 million wafers per month between 2030 and 2031, according to the report.　　Notably, all newly added capacity is currently designated for DRAM production, the report notes. For NAND flash, SK hynix is expected to focus on technology upgrades, such as increasing layer counts, rather than significant capacity expansion.　　Equipment Suppliers See Near-Term Gains, but Remain Cautious　　The expansion of the Yongin Semiconductor Cluster is drawing a growing number of semiconductor equipment and materials suppliers. According to iNews24, equipment and materials suppliers continue to move into the Yongin Semiconductor Cluster. South Korean materials, parts, and equipment firms, along with ASML, Lam Research, and Tokyo Electron Korea, have either relocated or are in the process of moving in.　　However, The Elec notes that suppliers remain cautious about execution given the scale and pace of the expansion plan. Supplier sources cited by the report said the increased investment is expected to provide a meaningful near-term boost for equipment and materials vendors, though achieving the full expansion target will ultimately depend on whether market demand remains strong enough to support it.　　Samsung Also Accelerating DRAM Expansion　　As for Samsung, according to Digital Daily, Samsung Electronics is accelerating DRAM capacity expansion at its P4 fab in Pyeongtaek by bringing forward its investment schedule. The report says Samsung’s DRAM investment next year could increase by roughly 10,000 wafers per month above previous estimates. Some industry observers also expect Samsung to begin issuing purchase orders for the P5 line from the second quarter of next year, potentially supporting investment equivalent to 150,000 wafers per month in 2027.

Key word：

SK hynix

Release time：2026-06-08 10:46 reading：508 Continue reading>>

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SK hynix Introduces iHBM Solution, Targets HBM5 Adoption with 30% Thermal Resistance Reduction

　　As thermal management emerges as a key challenge for HBM, SK hynix has unveiled its iHBM solution, which integrates cooling elements (ICEs) directly into the HBM package. The company plans to adopt the technology in next-generation products, including HBM5, according to its press release.　　According to SK hynix, unlike conventional HBM designs that dissipate heat through the core die, iHBM integrates cooling elements (ICEs), made of thermally conductive, electrically non-conductive silicon-based materials, directly into the D2D PHY between HBM and GPUs, where heat is most concentrated. The company said the technology reduces thermal resistance by 30% and improves operating stability.　　As highlighted by SK hynix, the iHBM solution adopts a structural approach to thermal management by creating an additional heat dissipation path within the package. It also leverages the company’s wafer-level packaging (WLP) process and proven MR-MUF technology to enable stable high-volume manufacturing.　　In addition, its compatibility with existing System-in-Package (SiP) architectures allows customers to adopt the thermal solution with minimal design modifications, SK hynix adds.　　In terms of future roadmap, SK hynix plans to incorporate the iHBM solution into next-generation HBM products, including HBM5, with the goal of improving the stability and efficiency of HPC systems and AI data centers.　　Another Key Technology beyond Hybrid Bonding　　Alongside SK hynix’s latest iHBM solution, hybrid bonding is widely seen as a key approach to addressing heat dissipation challenges in 20-stack HBM, which, as previously reported by The Elec, are expected to become increasingly difficult.　　As explained in the report, hybrid bonding differs from conventional thermo-compression (TC) bonding, which connects chips through soldered micro-bumps. Instead, it bonds dielectric materials such as silicon dioxide (SiO₂) and copper through an annealing process at temperatures of roughly 200°C to 400°C.　　By heating and gradually cooling copper sealed within dielectric layers, thermal expansion and vertical pressure enable direct copper-to-copper diffusion bonding without reaching copper’s melting point, the report notes, adding this approach helps reduce thermal damage to semiconductor circuits while delivering improved thermal and electrical performance.

Key word：

SK hynix

Release time：2026-05-27 10:42 reading：613 Continue reading>>

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SST and SK hynix system ic partner to expand availability of embedded SuperFlash technology

IC designers are increasingly seeking ways to keep production costs down while implementing low power, high endurance embedded flash. Microchip Technology Inc. via its subsidiary Silicon Storage Technology(SST) has announced a strategic partnership with SK hynix system ic to expand the availability of SuperFlash® technology. The partnership will introduce SST’s embedded SuperFlash technology to SK hynix system ic’s 110 nanometer (nm) CMOS platform, providing designers a cost-effective and low-power embedded flash memory solution. SST’s embedded SuperFlash technology offers low power, high reliability, superior data retention and endurance for a range of applications, such as Internet of Things (IoT) devices, smart cards and microcontroller-based applications. The technology’s power efficiency and fast erase time are ideal for low-power applications such as remote IoT edge nodes and contactless payment devices. “The combination of area-efficient, low-power SuperFlash technology and the highly cost-effective 110 nm process node opens up exciting new product opportunities, especially for IoT and microcontroller-based applications,” said Mark Reiten, vice president of SST, a wholly owned subsidiary of Microchip. “This partnership will enable customers who require low power, high endurance embedded flash to keep their production costs down by using the highly optimised 8-inch CMOS platform.”SST’s SuperFlash technology complements SK hynix system ic’s embedded flash memory solutions with low power and high reliability IP. SK hynix system ic is a fully owned subsidiary spun off from SK hynix (000660: Korea SE) in July 2017. It is a pure 200 mm foundry specialised in Display Driver IC (DDI), CMOS Image Sensor (CIS), and Power IC with a process range of 500 nm to 57 nm. “We believe that the adoption of SST’s embedded SuperFlash will enable SK hynix system ic to expand our technology portfolio, and it will help to respond to customer requests for highly reliable and robust embedded non-volatile memory solutions,” said Dr. SB You, marketing vice president of SK hynix system ic. “Moreover, we will provide customers with a cost-effective embedded flash solution to support their competitiveness in the market. As the demand for embedded flash memory solutions increases, there will be many customers coming to us to use our 110nm CMOS technology-based embedded flash memory solution.” The process development commenced earlier this year and is expected to be completed in early 2019. Contact SST for more information on the company’s extensive custom library of off-the-shelf IP blocks optimised for smartcard System-on-Chips (SoCs).

Key word：

SST,SK hynix

Release time：2018-12-17 00:00 reading：4281 Continue reading>>

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Chipmaker SK Hynix posts record second-quarter profit

SeongJoon Cho | Bloomberg | Getty ImagesSouth Korean chipmaker SK Hynix posted record second-quarter operating profit on Thursday, beating market expectations thanks to strong sales of DRAM chips for servers.The world's No. 2 memory chipmaker said operating profit for April-June grew 83 percent to 5.6 trillion won ($5 billion) from 3.1 trillion won a year earlier.That compared with a 5.4 trillion won Thomson Reuters StarMine SmartEstimate from a survey of 21 analysts.Revenue for the period rose 55 percent from a year earlier to a record 10.4 trillion won, the company said.SK Hynix stock rose 1 percent on the result, after sliding more than 7 percent since Monday on analyst forecasts of a slowdown in DRAM sector performance.The results come as an industry-wide shift to new production technology raises market fears of oversupply that could spell the end of a cycle of strong price growth that has underpinned record profits for the past two years.

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SK Hynix

Release time：2018-07-26 00:00 reading：4426 Continue reading>>

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Nvidia's GTX 1180 production should kick off with the new SK Hynix memory deal

Nvidia has signed a big chip deal with SK Hynix, putting the South Korean memory manufacturing giant in line for a large slice of Nvidia’s future financial successes with AI and data centre sales. And potentially with future GTX 1180-shaped graphics cards too.SK Hynix is the world’s second largest memory fab behind Samsung, and number four in the world for semiconductor sales behind TSMC, Intel, and Samsung - who is, again, in the very top spot.The memory manufacturer has already been enjoying a pretty stellar year, with huge worldwide memory demand that has seen system memory prices soar. But since the deal with Nvidia has entered the public domain, SK Hynix’s stocks have gone supersonic.Won’t settle for anything less than 4K? Don’t worry, the best Nvidia graphics cards are only a click away.Stocks are currently valued at 95,300 KRW apiece, toppling the previous high of the year of 90,700 KRW back in March. As a result of the Nvidia deal, this is the highest the semiconductor manufacturer’s stocks have been in 17 years.So what chips are SK Hynix providing Nvidia? From what we know of Nvidia’s next-generation of graphics cards (which is still very little, despite the recent Nvidia GTX 1180 rumours), we can only assume that SK Hynix will be providing GDDR6 for Nvidia’s GTX 1180 and further next-generation graphics cards. SK Hynix confirmed that its speedy GDDR6 memory modules were available for purchase earlier in the year, and this memory standard has been the most likely candidate to power Nvidia’s next gaming cards for some time.Nvidia’s current Volta generation Titan V utilises 12GB of HBM2 memory (which SK Hynix also make and assumedly supply to Nvidia in some capacity), although this on-package memory solution has been largely deemed too expensive and unnecessary for gaming cards - unfortunately, AMD’s RX Vega graphics cards had to find this out first hand.It’s all kicking off for SK Hynix and the company’s financials, and is likely the icing on the cake of what has already been an extremely successful year for the memory fab. Hopefully this newfound memory deal indicates signs of life within the Nvidia supply chain toward large-scale production of new product, and a good omen for gamers patiently waiting it out for new graphics cards from the green team.

Key word：

Nvidia,SK Hynix

Release time：2018-05-24 00:00 reading：4690 Continue reading>>

model	brand	Quote
CDZVT2R20B	ROHM Semiconductor
MC33074DR2G	onsemi
BD71847AMWV-E2	ROHM Semiconductor
RB751G-40T2R	ROHM Semiconductor
TL431ACLPR	Texas Instruments

model	brand	To snap up
IPZ40N04S5L4R8ATMA1	Infineon Technologies
BP3621	ROHM Semiconductor
BU33JA2MNVX-CTL	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
ESR03EZPJ151	ROHM Semiconductor
TPS63050YFFR	Texas Instruments

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