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ROHM Group Company SiCrystal and STMicroelectronics Expand <span style='color:red'>Silicon</span> Carbide Wafer Supply Agreement

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ROHM Group Company SiCrystal and STMicroelectronics Expand Silicon Carbide Wafer Supply Agreement

　　Kyoto, Japan and Geneva, Switzerland, April 22, 2024 – ROHM (TSE: 6963) and STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, announced today the expansion of the existing multi-year, long-term 150mm silicon carbide (SiC) substrate wafers supply agreement with SiCrystal, a ROHM group company. The new multi-year agreement governs the supply of larger volumes of SiC substrate wafers manufactured in Nuremberg, Germany, for a minimum expected value of $230 million.　　Geoff West, EVP and Chief Procurement Officer, STMicroelectronics, commented “This expanded agreement with SiCrystal will bring additional volumes of 150mm SiC substrate wafers to support our devices manufacturing capacity ramp-up for automotive and industrial customers worldwide. It helps strengthen our supply chain resilience for future growth, with a balanced mix of in-house and commercial supply across regions”.　　“SiCrystal is a group company of ROHM, a leading company of SiC, and has been manufacturing SiC substrate wafers for many years. We are very pleased to extend this supply agreement with our longstanding customer ST. We will continue to support our partner to expand SiC business by ramping up 150mm SiC substrate wafer quantities continuously and by always providing reliable quality”. said Dr. Robert Eckstein, President and CEO of SiCrystal, a ROHM group company.　　Energy-efficient SiC power semiconductors enable electrification in the automotive and industrial sectors in a more sustainable way. By facilitating more efficient energy generation, distribution and storage, SiC supports the transition to cleaner mobility solutions, lower emissions industrial processes and a greener energy future, as well as more reliable power supplies for resource-intensive infrastructure like data centers dedicated to AI applications.　　About STMicroelectronics　　At ST, we are over 50,000 creators and makers of semiconductor technologies mastering the semiconductor supply chain with state-of-the-art manufacturing facilities. An integrated device manufacturer, we work with more than 200,000 customers and thousands of partners to design and build products, solutions, and ecosystems that address their challenges and opportunities, and the need to support a more sustainable world. Our technologies enable smarter mobility, more efficient power and energy management, and the wide-scale deployment of cloud-connected autonomous things. We are committed to achieving our goal to become carbon neutral on scope 1 and 2 and partially scope 3 by 2027.　　Further information can be found at www.st.com .　　About ROHM　　Founded in 1958, ROHM provides ICs and discrete semiconductor devices characterized by outstanding quality and reliability for a broad range of markets, including automotive, industrial equipment and consumer market via its global development and sales network.　　In the analog power field, ROHM proposes the suitable solution for each application with power devices such as SiC and driver ICs to maximize their performance, and peripheral components such as transistors, diodes, and resistors.　　Further information on ROHM can be found at www.rohm.com .　　About SiCrystal　　SiCrystal, a ROHM group company, is one of the global market leaders for monocrystalline silicon carbide wafers. SiCrystal’s advanced semiconductor substrates provide the basis for the highly efficient use of electrical energy in electric vehicles, fast charging stations, renewable energies and in various fields of industrial applications.　　Further information on SiCrystal can be found at www.sicrystal.de .

Key word：

ROHM

Release time：2024-04-24 11:10 reading：1118 Continue reading>>

Earthquake Temporarily Halts <span style='color:red'>Silicon</span> Wafer, MLCC, and Semiconductor Facilitie sin Japan, Impact Expected to be Controllable, Says TrendForce

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Earthquake Temporarily Halts Silicon Wafer, MLCC, and Semiconductor Facilitie sin Japan, Impact Expected to be Controllable, Says TrendForce

　　TrendForce’s investigation into the impact of the recent strong earthquake in the Noto region of Ishikawa Prefecture, Japan, reveals that several key semiconductor-related facilities are located within the affected area. This includes MLCC manufacturer TAIYO YUDEN, silicon wafer (raw wafer) producers Shin-Etsu and GlobalWafers, and fabs such as Toshiba and TPSCo (a joint venture between Tower and Nuvoton).　　Given the current downturn in the semiconductor industry and the off-peak season, along with existing component inventories and the fact that most factories are located in areas with seismic intensities of level 4 to 5—within the structural tolerance of these plants—preliminary inspections indicate no significant damage to the machinery, suggesting the impact is manageable.　　In terms of silicon wafer production, Shin-Etsu and GlobalWafers' facilities in Niigata are currently shut down for inspection. The crystal growth process in raw wafer manufacturing is particularly sensitive to seismic activity. However, most of Shin-Etsu's crystal growth operations are primarily in the Fukushima area, thus experiencing limited impact from this earthquake. SUMCO reported no effects.　　On the semiconductor front, Toshiba's Kaga facility in the southwestern part of Ishikawa Prefecture is currently undergoing inspections. This site includes a six-inch and an eight-inch factory, along with a twelve-inch facility slated for completion in the 1H24. Additionally, the three TPSCo factories in Uozu, Tonami, and Arai—co-owned by Tower and Nuvoton (formerly Panasonic)—are all undergoing shutdowns for inspections. In contrast, USJC (UMC's acquisition of the Mie Fujitsu plant area in 2019) was not affected.　　MLCC manufacturer TAIYO YUDEN’s new Niigata plant, designed to withstand seismic activity up to level 7, reported no equipment damage. Murata (MLCC fabs only) and TDK’s MLCC plants experienced seismic intensities below level 4 and were not notably affected. However, Murata’s other factories (Non-Production MLCC) in Komatsu, Kanazawa, and Toyoma, which are in the areas with seismic intensity above 5, were closed for the New Year holiday, and staff are currently assessing any damage.

Key word：

earthquake

Release time：2024-01-03 16:49 reading：1668 Continue reading>>

ROHM Develops the First <span style='color:red'>Silicon</span> Capacitor BTD1RVFL Series

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ROHM Develops the First Silicon Capacitor BTD1RVFL Series

　　ROHM has developed new silicon capacitors - the BTD1RVFL series. The devices are increasingly being adopted in smartphones and wearable devices. Silicon semiconductor processing technology cultivated over many years has enabled higher performance in a smaller size.　　Smartphones and other devices with growing functionality require smaller components that support high-density mounting. Silicon capacitors using thin-film semiconductor technology can provide higher capacitance in a thinner form factor than existing multilayer ceramic capacitors (MLCCs). At the same time, stable temperature characteristics, along with excellent reliability, are accelerating their adoption in a variety of applications. In anticipation of the growth of the global market for silicon capacitors to 300 billion yen (about 2 billion US dollars) by 2030 (approximately 1.5 times higher than in 2022), ROHM has developed compact high-performance silicon capacitors by leveraging proprietary semiconductor processes.　　ROHM’s silicon capacitors manufactured using proprietary RASMID™ miniaturization technology allow processing in 1µm increments that eliminates chipping during external formation and improves dimensional tolerances within ±10µm. This small variation in product size enables mounting with a narrower distance between adjacent components. At the same time, the backside electrode used for bonding to the substrate has been expanded to the periphery of the package to improve mounting strength.　　The first series in the lineup, the BTD1RVFL series (BTD1RVFL102 / BTD1RVFL471) consists of the industry’s smallest 01005-size (0.1inch × 0.05inch) / 0402-size (0.4mm × 0.2mm) mass-produced surface mount silicon capacitors. The mounting area is reduced by approximately 55% over general 0201-size (0.2inch × 0.1inch) / 0603-size (0.6mm × 0.3mm) products to just 0.08mm2, contributing to greater application miniaturization. Moreover, a built-in TVS protection element ensures high ESD resistance that minimizes the number of person-hours required for surge countermeasures and other circuit design elements.　　ROHM plans on developing a second series in 2024 featuring superior high-frequency characteristics ideal for high-speed, large-capacity communication equipment. ROHM is also developing products for servers and other industrial equipment to expand applicability further.

Key word：

ROHM

Release time：2023-11-03 16:13 reading：1434 Continue reading>>

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What is a silicon controlled rectifier and its types

　　The advent of electronic devices and power control systems has revolutionized various industries. One crucial component that plays a significant role in these systems is the Silicon Controlled Rectifier.　　Silicon Controlled Rectifiers are vital components in electronic devices and power control systems. It allows current to flow in only one direction while providing control over the power output. It consists of three layers of semiconducting material, forming a P-N-P-N structure. This article will be exploring their types, applications, and working principle. Understanding SCRs is crucial for comprehending their significance in modern technology.　　What is a silicon controlled rectifier and its typesA Silicon Controlled Rectifier is an electronic component based on thyristors (power electronic power devices) and designed to allow current flow in only one direction while controlling the power output.　　It comprises three layers of semiconducting material: two P-type layers sandwiching an N-type layer or vice versa, creating a P-N-P-N structure. SCRs are available in various types, each with unique characteristics and applications.　　Some common types include phase-controlled SCRs, light-activated SCRs (also known as LASCRs), and gate turn-off SCRs (GTOs). Phase-controlled are widely used in power control applications, while LASCRs are primarily used in light-sensitive circuits. GTOs provide additional control features, allowing the device to be turned off by a gate signal. Understanding the different types helps in selecting the appropriate device for specific applications.　　What is the main purpose of SCRThe primary function of a Silicon Controlled Rectifier is to convert alternating current (AC) to direct current (DC), controllable rectification and voltage stabilization, and can be used as a contactless switch in automation equipment, as well as play the role of switching and voltage regulation, that is, it can be used in AC circuits to adjust the output voltage.　　It act as efficient rectifiers by allowing current flow during specific portions of the AC waveform. This controlled rectification process enables the regulation of voltage and current levels in various electronic systems. By controlling the timing and duration of the current flow, SCRs can precisely manage the power output. This makes them crucial components in power control systems, where stable and controlled DC power is required. It find extensive applications in industries such as power electronics, industrial automation, and consumer electronics. They are commonly used in motor drives, heating systems, lighting control, power supplies, and more. The ability is to convert AC to DC with high efficiency and accuracy makes them indispensable in modern technology.　　What are the applications of silicon controlled rectifiersSilicon Controlled Rectifiers have diverse applications across a wide range of industries. Their ability to control power flow and handle high currents makes them invaluable in various electronic systems.　　They are commonly used in power electronics, industrial automation, and consumer electronics. They find extensive applications in motor drives, where they control the speed and torque of electric motors.　　They are also utilized in heating systems, such as electric furnaces and electric water heaters, to precisely regulate temperature. In lighting control, it is employed in dimmers to adjust the brightness of light sources.　　Additionally, it plays a significant role in power supplies, battery chargers, and voltage regulators. With the increasing demand for electric vehicles and renewable energy systems, it is used in electric vehicle charging stations and solar power inverters. The wide-ranging applications showcase their versatility and importance in modern technology-driven industries.　　How does a SCR controller workAn SCR controller operates by controlling the triggering to switch between on and off states. When a control signal exceeds a specific threshold voltage, it triggers the gate of the SCR, allowing current to flow through the device. It remains in the conducting state until the current drops below a specified level or a reverse voltage is applied across it. This working principle enables precise control over the power flow in a circuit. By adjusting the timing and duration of the control signal, it can regulate the amount of power delivered to the load.　　They are widely used in applications that require accurate and efficient power control, such as motor speed control, heating systems, and voltage regulation. The ability is to rapidly switch on and off with high precision makes them indispensable in various electronic systems.

Key word：

silicon

Release time：2023-10-13 10:59 reading：2313 Continue reading>>

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Silicon Photonics Will Become Key to Semiconductor Future Development

　　In recent years, with the rise of AI and 5G technologies leading to increasing computational demands, Silicon Photonics technology has once again become a focal point of discussion in the semiconductor industry.　　AMEYA360 Perspective:　　Rewriting Semiconductor Development Rules with Silicon Photonics　　Since the development of the semiconductor industry, the industry’s trajectory has largely followed the development predicted by Gordon Moore – roughly doubling the number of transistors that can be accommodated on an integrated circuit approximately every two years. However, as chip sizes continue to shrink, chip architecture design is gradually being challenged. Semiconductor manufacturers, including TSMC, Samsung, and Intel, are striving to break through Moore’s Law as their goal. Others have publicly announced their focus on mature processes (the industry divides at 7nm, with 7nm and below considered advanced processes) and optimization of existing technologies.　　However, even as manufacturers push the boundaries of Moore’s Law, leading to increased transistor density per unit area, signal loss issues inevitably arise during signal transmission since chips rely on electricity to transmit signals. Despite the increased transistor count, power consumption problems persist. Silicon Photonics technology, which replaces electrical signals with optical signals for high-speed data transmission, successfully overcomes this challenge, achieving higher bandwidth and faster data processing. With this approach, chips do not need to cram more transistors per unit area or pursue smaller nanometers and nodes. Instead, they can achieve higher integration and performance on existing processes, further advancing technology.　　Optimistic about Silicon Photonics Technology, but Breakthroughs Will Take Time　　Currently, Silicon Photonics technology still faces various challenges, including alignment and coupling, thermal management, modulation and detection, expansion and integration, among others. Significant breakthroughs are unlikely in the short term, and major global manufacturers are still in the early development stages. In Taiwan, recent reports suggest that TSMC is actively venturing into Silicon Photonics technology. While TSMC has not officially confirmed this news, during the Silicon Photonics International Forum, a senior vice president from TSMC clearly stated, “If a good Silicon Photonics integration system can be provided, it can address the key issues of energy efficiency and AI computing power. This could be a Paradigm Shift, and we might be at the beginning of a new era.”　　This suggests that TSMC is optimistic about the development of Silicon Photonics technology. Although Taiwanese companies have not formally announced their entry into the Silicon Photonics field, it is expected that with the explosive growth in demand for data transmission, storage, and computing driven by AI technology, Silicon Photonics will undoubtedly be a critical technology for future semiconductor development.

Key word：

Silicon photonics

Release time：2023-09-18 16:23 reading：2386 Continue reading>>

TSMC Intensifies <span style='color:red'>Silicon</span> Photonics R&D, Rumored Collaboration with Broadcom and NVIDIA

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TSMC Intensifies Silicon Photonics R&D, Rumored Collaboration with Broadcom and NVIDIA

　　According to a report by Economic Daily, AI is driving a massive demand for data transmission, and silicon photonics and Co-Packaged Optics (CPO) have become new focal points in the industry. TSMC is actively entering this field and is rumored to be collaborating with major customers such as Broadcom and NVIDIA to jointly develop these technologies. The earliest large orders are expected to come in the second half of next year.　　TSMC has already assembled a research and development team of over 200 people, aiming to seize the business opportunities in the emerging market of ultra-high-speed computing chips based on silicon photonics, which are expected to arrive gradually starting next year.　　Regarding these rumors, TSMC has stated that they do not comment on customer and product situations. However, TSMC has a high regard for silicon photonics technology. TSMC Vice President Douglas Yu recently stated publicly, “If we can provide a good silicon photonics integration system, it can address two key issues: energy efficiency and AI computing capability. This could be a paradigm shift. We may be at the beginning of a new era.”　　Silicon photonics was a hot topic at the recent SEMICON Taiwan 2023 with major semiconductor giants like TSMC and ASE giving related keynote speeches. This surge in interest is mainly due to the proliferation of AI applications, which have raised questions about how to make data transmission faster and achieve signal latency reduction. The traditional method of using electricity for signal transmission no longer meets the demands, and silicon photonics, which converts electricity into faster optical transmission, has become the highly anticipated next-generation technology to enhance high-volume data transmission speeds in the industry.　　Industry reports suggest that TSMC is currently collaborating with major customers like Broadcom and NVIDIA to develop new products in the field of silicon photonics and Co-Packaged Optics. The manufacturing process technology ranges from 45 nanometers to 7 nanometers, and with mass production slated for 2025. At that time, it is expected to bring new business opportunities to TSMC.　　Industry sources reveal that TSMC has already organized a research and development team of approximately 200 people. In the future, silicon photonics is expected to be incorporated into CPU, GPU, and other computing processes. By changing from electronic transmission lines to faster optical transmission internally, computing capabilities are expected to increase several tens of times compared to existing processors. Currently, this technology is still in the research and academic paper stage, but the industry has high hopes that it will become a new driver of explosive growth for TSMC’s operations in the coming years.

Key word：

TSMC

Release time：2023-09-11 14:52 reading：2407 Continue reading>>

AMEYA360:Ams OSRAM TOPLED® D5140 <span style='color:red'>Silicon</span> PIN Photodiode

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AMEYA360:Ams OSRAM TOPLED® D5140 Silicon PIN Photodiode

　　AMEYA360:Ams OSRAM TOPLED D5140 Broadband Silicon PIN Photodiode (SFH 2202) provides higher sensitivity to visible light in the green wavelength and increased linearity (30x higher) than standard photodiodes on the market. By reducing the effect of interference from ambient light and improving the received optical signal quality, these enhanced features enable smart watches, activity trackers, and other wearables to measure heart rate and blood oxygen saturation (SpO2) more accurately. The SFH 2202 photodiode allows system operation with lower LED light intensity, saving power and extending battery run-time while maintaining highly accurate measurements. The specially designed package with black sidewalls minimizes internal cross-talk, further decreasing errors in optical measurements and increasing the constancy of heart rate measurements.　　FEATURES　　Clear silicone package　　ESD of 2kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)　　Especially suitable for applications from 400nm to 1100nm　　Small outline dimensions　　Suitable for reflow soldering　　Enhanced green sensitivity　　Speed-enhanced PD for 940nm　　APPLICATIONS　　Digital diagnostic devices　　Vital sign monitoring　　SPECIFICATIONS　　16V maximum reverse voltage　　150mW maximum total power dissipation　　830nm typical wavelength of maximum sensitivity　　400nm to 1100nm typical spectral range of sensitivity　　3.2A to 4.1A typical photocurrent range　　8.12mm2 typical radiant sensitive area　　2.85mm x 2.85mm typical active chip area dimensions (LxW)　　60° typical half angle　　Dark current　　0.07nA typical at 5V　　25nA maximum at 10V, 0.1nA typical　　75ns to 250ns typical rise time range　　75ns to 200ns typical fall time range　　1.1V typical forward voltage　　23pF capacitance　　-40°C to +85°C operating temperature range

Key word：

AMEYA360,Ams OSRAM

Release time：2023-04-11 11:30 reading：3224 Continue reading>>

AMEYA360:Onsemi NTH4L028N170M1 <span style='color:red'>Silicon</span> Carbide (SiC) MOSFET

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AMEYA360:Onsemi NTH4L028N170M1 Silicon Carbide (SiC) MOSFET

　　Anson Mae NTH4L028N170M1 Silicon Carbide (SiC) MOSFET optimized for fast switching applications. Anson MOSFET uses planar technology to operate reliably when the grid is at a negative grid voltage drive and turn-off peak. The series provides optimum performance when driven by a 20V grid drive, but can also be used in conjunction with an 18V grid drive.　　At a test condition of 1200V at 40A, the 1700V EliteSiC MOSFET achieves a gate charge (Qg) of 200nC, compared to equivalent competitive devices that are closer to 300nC. A low Qg is critical to achieving high efficiency in fast switching, high-power renewable energy applications.　　The onsemi NTH4L028N170M1 1700V EliteSiC MOSFET is housed in a TO247-4L package with a Kelvin source connection on the fourth pin that improves turn-on power dissipation and gate noise.　　Characteristic　　Typical value RDS(on) = 28mΩ (VGS = 20V)　　Ultra-low grid charge (QG(tot)=200nC)　　High speed switch with low capacitance (Coss=200pF)　　100% avalanche tested　　These devices are lead free and comply with the RoHS directive　　Application　　UPS　　Dc/DC converter　　Boost converter

Key word：

AMEYA360,Onsemi,NTH4L028N170M1

Release time：2023-02-24 10:41 reading：3318 Continue reading>>

Ameya360:Onsemi NVH4L015N065SC1 <span style='color:red'>Silicon</span> Carbide (SiC) MOSFETs

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Ameya360:Onsemi NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs

　　According to Ameya 360：onsemi NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability than Silicon. The onsemi NVH4L015N065SC1 features low ON resistance, and the compact chip size ensures low capacitance and gate charge. System benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.　　FEATURES:　　Qualified for automotive according to AEC?Q101　　650V rated　　Max RDS(on) = 18mΩ at Vgs = 18V, Id = 75A　　High-speed switching and low capacitance　　100% UIL tested　　Devices are RoHS compliant　　APPLICATIONS：　　Automotive DC/DC and PFC　　Automotive traction inverter

Key word：

Ameya360,Onsemi

Release time：2023-01-12 11:18 reading：3077 Continue reading>>

Mayfield Partners with <span style='color:red'>Silicon</span> Catalyst to Fund <span style='color:red'>Silicon</span> Startups

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Mayfield Partners with Silicon Catalyst to Fund Silicon Startups

　　Silicon Catalyst will provide eligible startups with $150 thousand in funding and potential for more.　　If there’s one thing that’s apparent in the tech boom of the last decade, it’s that the focus of many venture capitalists is on software-based and digital-app startups. I may be over generalizing, but many of these investors don’t understand what is commonly now called deep tech, especially since software and digital startups are easier and simpler to understand as they provide an easy route to potential exit, with low cost of entry and business models often relying on going viral and attracting volumes of users on their platforms.　　But silicon startups have bigger barriers to entry in terms of cost, product development, and long customer development cycles. So, anything that gives them support to get to product quicker has to be a bonus. One incubator that has been gradually growing its support for the semiconductor startup ecosystem is Silicon Catalyst. The California-based company offers an ecosystem of in-kind partners that provide startups with access to design tools, silicon devices, and networking, as well as a path to funding, banking, and marketing acumen.　　Silicon Catalyst was established in the Bay Area in California in 2015 by Rick Lazansky, Mike Noonen, Dan Armbrust, and Tarun Verma, and now has chapters in Israel, the U.K., and China. Its focus is exclusively on accelerating semiconductor solutions, built on a comprehensive coalition of in-kind and strategic partners to dramatically reduce the cost and complexity of development. More than 700 startup companies worldwide have engaged with Silicon Catalyst and the accelerator has admitted 88 companies.　　Last week, Silicon Catalyst announced a significant partnership with venture capital firm Mayfield to foster silicon startup innovation. Mayfield will invest capital in and provide mentoring to the majority of seed stage companies admitted to the Silicon Catalyst incubator/accelerator, and evaluate them for follow-on investments.　　In an exclusive interview with EE Times, Silicon Catalyst and Mayfield explained why such a partnership was needed.　　“Since starting Silicon Catalyst, we’ve been able to de-risk the initial growth path for semiconductor startups,” said Silicon Catalyst CEO Pete Rodriguez. “If you’re going to partner with someone, it is important to partner with a tier one investor like Mayfield. This now allows us to be more like a Y Combinator for silicon startups.”　　He added, “Mayfield and Silicon Catalyst share the same goal of driving semiconductor innovation and startup company market success. It is exciting to know that most seed stage companies will be eligible to receive $150 thousand at admission into the Silicon Catalyst program as a result of our alliance with Mayfield. Furthermore, this will allow startups to hit the ground running in conjunction with free shuttle runs, design tools, and IP from our more than 60 in-kind partners, which include TSMC, Synopsys, and Arm.”　　Navin Chaddha, managing partner at Mayfield, said, “We have a strong conviction in the renaissance of silicon, a trend that has accelerated in the wake of the plateauing of Moore’s Law. Hence, we would also like to further startup innovation, and so partnering with Silicon Catalyst enables us to look at multiple emerging opportunities, especially in areas like RISC-V and chiplets, and several others that will form the potential building blocks for next generation technologies and products.”　　Both Chaddha and Rodriguez were conscious of not sending out the wrong message in regard to the RISC-V element of that statement. Chaddha said their approach is completely architecture agnostic, and that Mayfield has backed startups developing both Arm-based products and RISC-V products. Meanwhile, Rodriguez emphasized the importance of Arm in the Silicon Catalyst ecosystem. Mayfield’s investments over the last five years have included Alif Semiconductor, Frore Systems, Fungible, Graphwear, Nuvia (acquired by Qualcomm), Recogni, and a couple of stealth startups.　　Mayfield investments　　Mayfield’s current and milestone semiconductor investments. (Source: Mayfield)　　Alif Semiconductor co-founder and president Reza Kazerounian explained to me in Cambridge, U.K., earlier this year why Arm was important for its growth: he said that Alif was after a large customer base, and that meant they needed a large support ecosystem and toolchain behind their products. Conversely, Chaddha said they also have startups in Mayfield’s portfolio that are using RISC-V and are in the process of making architectural changes.　　Over the years, Mayfield has had a track record of investing in iconic semiconductor companies such as Cypress, Inphi, LAM Research, LSI Logic, MIPS, Qtera, S3, and Sandisk. “The Silicon Catalyst team have been unwavering supporters of entrepreneurs across the semi ecosystem, spanning photonics, IP, MEMS, sensors, materials, and life science innovation teams worldwide,” Chaddha said. “They have their finger on the pulse of the major societal trends and technology inflection points that are powering this [silicon] renaissance. Together, we are excited to watch many industries being revolutionized by the new wave of semiconductor startups. It is an honor to partner with Silicon Catalyst to nurture the wave of entrepreneurs bringing silicon back to Silicon Valley.”　　How the partnership will work　　So, how exactly will the partnership between Silicon Catalyst and Mayfield work? The aim of the partnership is to provide mentorship and investment to companies coming into Silicon Catalyst. The incubator has two primary screening cycles, but will consider companies out of phase. Seed stage companies will be eligible to receive $150 thousand in funding, though it’s important to emphasize that not all the companies receive the funding automatically—they will go through Mayfield’s own criteria for investing, too. Chaddha said the fund amount is flexible, so there is no cap as such. I also asked whether it would be limited to those companies based in Silicon Valley only, and Chaddha said they would look globally.　　Navin Chaddha (left) with Pete Rodriguez (right). (Source: Silicon Catalyst).　　As these incubated companies progress through incubation, they will be eligible to apply to Silicon Catalyst Angels and receive additionally matching investments of up to $250 thousand per company from the new alliance. Finally, startup companies that received these investments and execute on their plans will be at the top of the pipeline for future investments through Mayfield’s regular investment funds.　　Chaddha said the key benefit of the partnership is that it will help silicon startups lower the cost of getting products to market and accelerate the path to design wins. Sean Redmond, managing partner for the U.K. branch of Silicon Catalyst, said, “What we are seeing is that for semiconductor startups, time is not their best friend. Hence, the more you take out the risk the better, and having Mayfield back our startups is a huge benefit.”

Key word：

Silicon

Release time：2022-12-30 16:44 reading：2643 Continue reading>>

model	brand	Quote
CDZVT2R20B	ROHM Semiconductor
RB751G-40T2R	ROHM Semiconductor
TL431ACLPR	Texas Instruments
MC33074DR2G	onsemi
BD71847AMWV-E2	ROHM Semiconductor

model	brand	To snap up
ESR03EZPJ151	ROHM Semiconductor
TPS63050YFFR	Texas Instruments
BP3621	ROHM Semiconductor
BU33JA2MNVX-CTL	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
IPZ40N04S5L4R8ATMA1	Infineon Technologies

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