New Renesas USB-C Power Solution with Innovative Three-Level Topology Improves Performance and Reduces <span style='color:red'>System</span> Size
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New Renesas USB-C Power Solution with Innovative Three-Level Topology Improves Performance and Reduces System Size

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RAA489300/RAA489301 high-performance buck controller designed with a three-level buck topology used for battery charging and voltage regulation in USB-C systems such as multiple-port USB-PD chargers, portable power stations, PC docking station, robots, drones, and other applications that need a high efficiency DC/DC controller.　　The three-level buck converter topology enabled by the new IC delivers exceptional efficiency and significantly reduces the required inductance for regulating the output voltage. Its innovative design minimizes power loss and reduces system size, making it ideal for compact, high-performance applications.　　The three-level topology consists of two additional switches and a flying capacitor compared to a conventional two-level buck converter. The flying capacitor reduces voltage stress on the switches, allowing designers to use lower voltage FETs with better figures of merit. The result is reduced conduction and switching losses. This topology also enables the use of a smaller inductor with peak-to-peak ripple of only about 25 percent of that of a two-level converter, enabling reduced inductor core and direct current resistance losses.　　Renesas is a worldwide leader in USB-PD solutions, offering a comprehensive range of products, including turnkey solutions for various applications. Renesas helps customers shorten their time-to-market with an extensive development environment and pre-certified USB-IF reference designs. Renesas USB-PD solutions offer superior quality and safety, along with high efficiency and power density.　　“This three-level buck topology solution is a prime example of Renesas’ worldwide leadership in battery charging,” said Gaurang Shah, Vice President of the Power Division at Renesas. “The innovative technology includes patent-pending breakthroughs that offer our customers clear advantages over competing USB-C power offerings.”　　The 3-Level DC-DC RAA489300/RAA489301 battery charger and voltage regulator offers superior thermal performance, which reduces cooling requirements and results in cost and space savings. This innovative approach addresses the growing demand for compact and efficient power management systems.　　Key Features of the RAA489300/RAA489301 battery charger and voltage regulator　　Wide range of input and output voltages for use in voltage battery packs and with various PD adapters　　Integrated safety features with built-in protection mechanisms against overcharging, overheating, and voltage anomalies　　Scalability for easily adapting to various power levels and application requirements　　Optimized switching architecture divides the voltage across power switches, improving efficiency　　Minimizes power consumption, contributing to greener, more sustainable designs　　Lower thermal stress improves system reliability and extends product lifespan　　Winning Combinations　　Renesas offers the RTK-251-SinkCharger-240W and the 240W Dual-Port Daughter Card Winning Combinations that minimize the effort required for customers to design USB-C battery charging into their products. Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. 　　Device Availability　　The RAA489300/RAA489301 is available today in a 4×4 mm 32-lead TQFN package. Comprehensive design support and tools, including the RTK-251-SinkCharger-240W Kit and the RTKA489300DE0000BU Evaluation Board, are also available.
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Release time：2025-08-20 11:46 reading：798 Continue reading>>
Renesas Introduces 64-bit RZ/G3E MPU for High-Performance HMI <span style='color:red'>System</span>s Requiring AI Acceleration and Edge Computing
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Renesas Introduces 64-bit RZ/G3E MPU for High-Performance HMI Systems Requiring AI Acceleration and Edge Computing

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, announced the launch of its new 64-bit RZ/G3E microprocessor (MPU), a general-purpose device optimized for high-performance Human Machine Interface (HMI) applications. Combining a quad-core Arm® Cortex®-A55 running at up to 1.8GHz with a Neural Processing Unit (NPU), the RZ/G3E brings high-performance edge computing with AI inference for faster, more efficient local processing. With Full HD graphics support and high-speed connectivity, the MPU targets HMI systems for industrial and consumer segments including factory equipment, medical monitors, retail terminals and building automation.　　High-Performance Edge Computing and HMI Capabilities　　At the heart of the RZ/G3E is a quad-core Arm Cortex-A55, a Cortex-M33 core, and the Ethos™-U55 NPU for AI tasks. This architecture efficiently runs AI applications such as image classification, object recognition, voice recognition and anomaly detection while minimizing CPU load. Designed for HMI applications, it delivers smooth Full HD (1920x1080) video at 60fps on two independent displays, with output interfaces including LVDS (dual-link), MIPI-DSI, and parallel RGB. A MIPI-CSI camera interface is also available for video input and sensing applications.　　“The RZ/G3E builds on the proven performance of the RZ/G series with the addition of an NPU to support AI processing,” said Daryl Khoo, Vice President of Embedded Processing at Renesas. “By using the same Ethos-U55 NPU as our recently announced RA8P1 microcontroller, we’re expanding our AI embedded processor portfolio and offering a scalable path forward for AI development. These advancements address the demands of next-generation HMI applications across vision, voice and real-time analytics with powerful AI capabilities.”　　The RZ/G3E is equipped with a range of high-speed communication interfaces essential for edge devices. These include PCI Express 3.0 (2 lanes) for up to 8Gbps, USB 3.2 Gen2 for fast 10Gbps data transfer, and dual-channel Gigabit Ethernet for seamless connectivity with cloud services, storage, and 5G modules.　　Low-Power Standby with Fast Linux Resume　　Starting with the third-generation RZ/G3S, the RZ/G series includes advanced power management features to significantly reduce standby power. The RZ/G3E maintains sub-CPU operation and peripheral functions while achieving low power consumption around 50mW and around 1mW in deep standby mode. It supports DDR self-refresh mode to retain memory data, enabling quick wake-up from deep standby for running Linux applications.　　Comprehensive Linux Software Support　　Renesas continues to offer the Verified Linux Package (VLP) based on the reliable Civil Infrastructure Platform, with over 10 years of maintenance support. For users requiring the latest versions, Renesas provides Linux BSP Plus, including support for the latest LTS Linux kernel and Yocto. Ubuntu by Canonical and Debian open-source OS are also available for server or desktop Linux environments.　　Key Features of RZ/G3E　　CPU: Quad-core Cortex-A55 (up to 1.8GHz), Cortex-M33　　NPU: Ethos-U55 (512 GOPS)　　HMI: Dual Full HD output, MIPI-DSI / Dual-link LVDS / Parallel RGB, 3D graphics, H.264/H.265 codec　　Memory Interface: 32-bit LPDDR4/LPDDR4X with ECC　　Connectivity for 5G Communication: PCIe 3.0 (2 lanes), USB 3.2 Gen2, USB 2.0 x2, Gigabit Ethernet x2, CAN-FD　　Operating Temperature: -40°C to 125°C　　Package Options: 15mm square 529-pin FCBGA, 21mm square 625-pin FCBGA　　Product Longevity: 15-year supply under Product Longevity Program (PLP)　　System-on-Module Solutions from Renesas and Ecosystem Partners　　Renesas has also introduced system-on-module (SoM) solutions featuring the RZ/G3E. A broad range of SoM solutions will be available from Renesas’ ecosystem partners such as a SMARC module from Tria, an OSM (Size-M) from ARIES Embedded, and an OSM (Size-L) from MXT.　　Winning Combinations　　Renesas combined the RZ/G3E with other compatible devices to develop Full HD Dual-Display HMI Platform and Digital Otoscope solutions. These Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly. They can be found at renesas.com/win.　　Availability　　The RZ/G3E is available today, along with the Evaluation Board Kit. The kit includes a SMARC v2.1.1 module board and a carrier board.If you want to buy related products, you can contact AMEYA360's customer service.
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Release time：2025-07-30 15:09 reading：811 Continue reading>>
NOVOSENSE Launches High-Performance 2-Wire Hall Switch MT72xx Series: Compact Design with <span style='color:red'>System</span>-Level Reliability
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NOVOSENSE Launches High-Performance 2-Wire Hall Switch MT72xx Series: Compact Design with System-Level Reliability

　　NOVOSENSE Microelectronics ("NOVOSENSE") has launched the MT72xx series, 2-wire current output Hall switches. The switches feature superior EMC performance, multiple sensing polarity options, and highly integrated design, achieving ASIL-A functional safety certification and full compliance with AEC-Q100 Grade 0 standards. Designed for long-wiring scenarios in vehicle body electronics and domain controller systems, the MT72xx series provides optimized solutions for seatbelt buckle detection, window lift motor control, and other automotive applications.　　Addressing Long Wiring Harness Challenges in Automotive　　With rapid advancement of automotive intelligence and electrification, increasingly complex vehicle body functions and highly integrated domain controllers have significantly extended wiring harnesses between sensors and control units. This introduces critical challenges including elevated signal interference risks, increased costs, and compromised system reliability.　　NOVOSENSE's MT72xx series delivers robust signal integrity while effectively reducing wiring complexity and lowering harness costs. Designed for long-wiring scenarios such as door lock detection, anti-pinch window control, power tailgate position sensing, seat adjustment, and seatbelt buckle detection, these devices provide stable current output with superior anti-interference capabilities, maintaining signal reliability even in extended wiring conditions.　　High Integration & Robustness for Automotive-Grade Standards　　Engineered for harsh automotive environments with strong EMI interference, the MT72xx series integrates a 100nF(only TO92S package)capacitor to enhance EMC/ESD performance, simplify peripheral configuration, and optimize BOM space, enabling flexible system architecture design. Compliant with AEC-Q100 Grade 0, the devices ensure long-term stability under extreme high-temperature conditions.　　Featuring multiple sensing polarity options (unipolar, omnipolar, latch) and adjustable sensitivity thresholds, the MT72xx series offers design flexibility to accommodate diverse magnet solutions and vehicle architectures, streamlining development and debugging processes.　　Comprehensive Resources to Accelerate Time-to-Market　　To expedite customer development, NOVOSENSEN provides dedicated MT72xx demo boards and magnetic simulation services. These resources enable rapid device validation, magnet solution matching, and cost-effective debugging, significantly shortening product deployment cycles.
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Release time：2025-07-14 14:25 reading：730 Continue reading>>
Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging <span style='color:red'>System</span>s
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Renesas Strengthens Power Leadership with New GaN FETs for High-Density Power Conversion in AI Data Centers, Industrial and Charging Systems

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply systems including the new 800V HVDC architecture, E-mobility charging, UPS battery backup devices, battery energy storage and solar inverters. Designed for multi-kilowatt-class applications, these 4th-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, significantly reducing switching power loss while retaining the operating simplicity of silicon FETs. Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design for specific power architectures.　　The new TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS devices leverage the robust SuperGaN® platform, a field-proven depletion mode (d-mode) normally-off architecture pioneered by Transphorm, which was acquired by Renesas in June 2024. Based on low-loss d-mode technology, the devices offer superior efficiency over silicon, silicon carbide (SiC), and other GaN offerings. Moreover, they minimize power loss with lower gate charge, output capacitance, crossover loss, and dynamic resistance impact, with a higher 4V threshold voltage, which is not achievable with today’s enhancement mode (e-mode) GaN devices.　　Built on a die that is 14 percent smaller than the previous Gen IV platform, the new Gen IV Plus products achieve a lower RDS(on) of 30 milliohms (mΩ), reducing on-resistance by 14 percent and delivering a 20 percent improvement in on-resistance output-capacitance-product figure of merit (FOM). The smaller die size reduces system costs and lowers output capacitance, which results in higher efficiency and power density. These advantages make the Gen IV Plus devices ideal for cost-conscious, thermally demanding applications where high performance, efficiency and small footprint are critical. They are fully compatible with existing designs for easy upgrades, while preserving existing engineering investments.　　Available in compact TOLT, TO-247 and TOLL packages, they provide one of the broadest packaging options to accommodate thermal performance and layout optimization for power systems ranging from 1kW to 10kW, and even higher with paralleling. The new surface-mount packages include bottom side (TOLL) and top-side (TOLT) thermal conduction paths for cooler case temperatures, allowing easier device paralleling when higher conduction currents are needed. Further, the commonly used TO-247 package provides customers with higher thermal capability to achieve higher power.　　“The rollout of Gen IV Plus GaN devices marks the first major new product milestone since Renesas’ acquisition of Transphorm last year,” said Primit Parikh, Vice President of the GaN Business Division at Renesas. “Future versions will combine the field-proven SuperGaN technology with our drivers and controllers to deliver complete power solutions. Whether used as standalone FETs or integrated into complete system solution designs with Renesas controllers or drivers, these devices will provide a clear path to designing products with higher power density, reduced footprint and better efficiency at a lower total system cost.”　　Unique d-mode Normally-off Design for Reliability and Easy Integration　　Like previous d-mode GaN products, the new Renesas devices use an integrated low-voltage silicon MOSFET – a unique configuration that achieves seamless normally-off operation while fully capturing the low loss, high efficiency switching benefits of the high- voltage GaN. As they use silicon FETs for the input stage, the SuperGaN FETs are easy to drive with standard off-the-shelf gate drivers rather than specialized drivers that are normally required for e-mode GaN. This compatibility simplifies design and lowers the barrier to GaN adaptation for system developers.　　GaN-based switching devices are quickly growing as key technologies for next-generation power semiconductors, fueled by demand from electric vehicles (EVs), inverters, AI data center servers, renewable energy, and industrial power conversion. Compared to SiC and silicon-based semiconductor switching devices, they provide superior efficiency, higher switching frequency and smaller footprints.　　Renesas is uniquely positioned in the GaN market with its comprehensive solutions, offering both high- and low-power GaN FETs, unlike many providers whose success in the field has been primarily limited to lower power devices. This diverse portfolio enables Renesas to serve a broader range of applications and customer needs. To date, Renesas has shipped over 20 million GaN devices for high- and low-power applications, representing more than 300 billion hours of field usage.
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Release time：2025-07-04 15:04 reading：712 Continue reading>>
Renesas Partners with Indian Government to Drive Innovation Through Startups and Industry-Academia Collaboration, Strengthening India’s Semiconductor Ecosystem
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Renesas Partners with Indian Government to Drive Innovation Through Startups and Industry-Academia Collaboration, Strengthening India’s Semiconductor Ecosystem

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced its partnership with the Ministry of Electronics & Information Technology (MeitY), Government of India, to support local startups and academic institutions in the field of VLSI and embedded semiconductor systems. Renesas also celebrated the expansion of its offices in Bengaluru and Noida to accommodateits growing R&D teams, with the inauguration ceremonies held today. This strategic move underscores Renesas’ commitment to innovation and excellence in India and aims to drive continued growth in the region.　　Renesas and the Centre for Development of Advanced Computing (C-DAC), an autonomous scientific society of MeitY, today signed and exchanged two Memoranda of Understanding (MOUs) under the MeitY Chips to Startup (C2S) programme (Note). These MOUs focus on 1) Supporting local startups by enabling them to drive technological advancement andpromote local manufacturing in alignment with the Make in India initiative; and 2) Enhancing industry-academia collaboration by fostering an innovative, product-focused mindset among students.　　Shri Ashwini Vaishnaw, Minister for Railways, Information & Broadcasting, and Electronics & Information Technology, Government of India; along with Malini Narayanamoorthi, India Country Manager and VP, MID Engineering, Analog & Connectivity Group at Renesas; and Rea Callendar, Head of Platform Adoption and Ecosystem Enablement at Altium, which joined forces with Renesas in August 2024, attended the celebration at the Noida office. Hidetoshi Shibata, CEO of Renesas, also joined virtually, underscoring the global significance of this milestone.　　India is a key market for Renesas, offering significant growth potential and access to a highly skilled talent pool. Renesas is committed to deepening its partnerships with local companies, startups, and universities, with the target to generate over 10 percent of itsglobal revenue from the Indian market by 2030. Recent collaborations include the OSAT factory project with CG Power and Stars Microelectronics in Gujarat and the MOU with IIT Hyderabad. Renesas is also expanding its operations in India, with plans to increase its headcount to 1,000 by the end of 2025. This growth initiative reinforces Renesas' long-term commitment to India and supports its ambition to become an employer of choice in this dynamic and fast-evolving market.　　"The inauguration of our expanded offices marks a significant milestone for Renesas in India. It reflects our unwavering commitment to innovation, excellence, and the nurturing of local talent. By building products in India, for India and the world, we continue to drive growth and deliver meaningful impact across the Indian market,” said Malini Narayanamoorthi, India Country Manager and VP, MID Engineering, Analog & Connectivity Group at Renesas. "We are proud to sign two MOUs under the MeitY C2S programme, focused on advancing research, fostering innovation, and nurturing product-focused engineers. These strategic collaborations align with the Make in India initiative, aiming to strengthen local design and manufacturing capabilities and empower homegrown talent to drive the future of industry."　　MOUs under MeitY C2S programme　　Renesas and C-DAC signed two MOUs to collaborate in the field of VLSI and embedded semiconductor systems, with the aim of supporting local startups and academic institutions to accelerate innovation and foster self-reliance in India’s semiconductor and product ecosystem. The C2S programme encompasses collaboration with over 250 academic institutions and R&D organizations across the country, including IITs, NITs, IIITs, government and private colleges, along with approximately 15 startups, creating a strong ecosystem for indigenous innovation.　　MOU for Startups: Renesas will help strengthen the product engineering capabilities of local startups by providing Renesas development boards and Altium Designer, the leading PCB design software.　　MOU for Academic Institutions: Renesas will support experiential learning by offering development boards, PCB education and training, Altium Designer software, and access to the Altium 365 cloud platform, aiming to empower the next generation of electronics engineers and nurture a community of innovators.　　Opening of new offices in Bengaluru and Noida　　In May, Renesas consolidated and relocated its existing offices in Bengaluru and Noida into new, state-of-the-art office spaces, marking a significant milestone in the company’s growth and expansion in India.　　The new Bengaluru office is Renesas’ largest site in India, encompassing world-class design teams, test labs, and comprehensive facilities to support employees. It brings together approximately 500 team members, including R&D engineers, business teams, and employees from the recently acquired Altium and Part Analytics, creating a unified and collaborative workspace. The facility is designed to leverage India’s rich talent ecosystem to drive the development of innovative products.　　The new Noida office brings the engineering and business teams together to accelerate the delivery of world-class high-performance compute solutions, driving automotive market growth through innovation, collaboration, and consistent execution. This strategic expansion reinforces Renesas’ commitment to investing in top-tier local talent and strengthening its capabilities in R-Car system-on-chip (SoC) solutions. Designed to integrate cutting-edge tools and workflows, the new Noida site will further enhance synergy across the global engineering team and support Renesas’ long-term strategy in this critical domain.　　(Note) Chips to Startup (C2S) programme: An initiative launched by the Indian government in December 2021 to boost semiconductor and display manufacturing in the country. C2S not only aims at developing specialized manpower in VLSI/Embedded System Design domain but also addresses each entity of the electronics value chain via specialized manpower training, creation of reusable IP repository, design of application-oriented Systems/ASICs/FPGAs, and deployment by academia/ R&D organization by way of leveraging the expertise available at Startups/MSMEs. For more details, please visit the C2S programme website.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. Learn more at renesas.com. Follow us on LinkedIn, Facebook, X, YouTube and Instagram　　(Remarks). All names of products or services mentioned in this press release are trademarks or registered trademarks of their respective owners.
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Release time：2025-05-14 14:21 reading：752 Continue reading>>
Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs Integrated into SMA’s Large Scale Solar <span style='color:red'>System</span>
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Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs Integrated into SMA’s Large Scale Solar System

　　SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system technology, adopts Semikron Danfoss’ Module with ROHM’s latest 2kV SiC MOSFETs inside its new large scale solar system “Sunny Central FLEX”, a modular platform designed to streamline and enhance grid connections for large-scale photovoltaic installations, battery storage systems, and emerging technologies.　　“ROHM’s new 2kV class SiC MOSFETs are designed to enable simple and highly efficient converter topologies for 1500V DC-links. It is developed with high reliability targets and cosmic radiation robustness – addressing the stringent conditions and extended converter lifetime requirements of the photovoltaic sector and beyond,” says Wolfram Harnack, President at ROHM Semiconductor GmbH. “The technology of our SiC device structure and integrated on-chip gate resistance eases device paralleling and simplifies high power module designs. The mass production has started,” adds Harnack.　　Semikron Danfoss’ SEMITRANS® 20 has designed for high power applications and fast-switching operations, it represents the next generation of power modules for large converters. SEMITRANS® 20 with ROHM’s 2kV SiC MOSFETs is an integral part of SMA’s Sunny Central FLEX. “Semikron Danfoss and ROHM have collaborated for over a decade, focusing primarily on the implementation of silicon carbide (SiC) in power modules. More recently, we have teamed up to integrate silicon IGBTs as well”, says Peter Sontheimer, Senior Vice President of Semikron Danfoss’ Industry division.　　“The new SEMITRANS® 20 offers simple, efficient solutions for 1500VDC applications. These modules are ideal for solar and energy storage inverters. Upcoming high-power electric truck chargers, as well as wind converters, will also benefit,” adds Sontheimer.　　"The cooperation between SMA, Semikron Danfoss and ROHM is proof of how the seamless integration of innovative technologies creates the conditions for future-oriented energy projects," said Bernd Gessner, Product Manager Power Conversion Systems at SMA. "The demands on these solutions are higher than ever. SMA has decades of expertise and fulfills the highest requirements in terms of performance, reliability, durability and flexibility. The fact that Sunny Central FLEX meets these highest future-proof standards is also the result of the excellent cooperation with our partners who share the same commitment to excellence."　　About SMA Solar Technology AG        As a leading global specialist in photovoltaic and storage system technology, the SMA Group is setting the standards today for the decentralized and renewable energy supply of tomorrow. SMA’s portfolio contains a wide range of efficient PV and battery inverters, holistic system solutions for PV and battery-storage systems of all power classes, intelligent energy management systems and charging solutions for electric vehicles and power-to-gas applications. Digital energy services as well as extensive services round off SMA’s range. SMA inverters installed throughout the world within the last 20 years with a total output of approximately 144 GW help avoid the emission of more than 64 million tons of CO2. SMA’s multi-award-winning technology is protected by more than 1,600 patents and utility models. Since 2008, the Group’s parent company, SMA Solar Technology AG, has been listed on the Prime Standard of the Frankfurt Stock Exchange (S92) and is listed on the SDAX index.　　About Semikron Danfoss        Semikron Danfoss is a global technology leader in power electronics. Our product offerings include semiconductor devices, power modules, stacks and systems. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainably and thus to significantly reduce overall CO2 emissions – facing one of the biggest challenges today. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity and service to deliver best-in-industry performance and for a sustainable future. Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. We employ more than 3,500 people in 28 locations across the world. Our global footprint with production sites in Germany, Brazil, China, France, India, Italy, Slovakia and the United States ensures an unmatched service for our customers and partners. We offer more than 90 years of combined expertise in power module packaging, innovation and customer applications – making us the ultimate partner in power electronics.
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Release time：2025-04-29 10:49 reading：631 Continue reading>>
Renesas Introduces Highly Integrated LCD Video Processor that Enables Next-Generation ASIL B Automotive Display <span style='color:red'>System</span>s
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Renesas Introduces Highly Integrated LCD Video Processor that Enables Next-Generation ASIL B Automotive Display Systems

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RAA278830 Video Diagnostics Bridge IC, a highly integrated dual Low-Voltage Differential Signal (LVDS) LCD video processor. The new IC integrates many of the features necessary to design ISO 26262-compliant ASIL B automotive display systems such as heads-up-displays (HUD), digital instrument clusters, camera monitor systems (CMS), and electronic mirrors.　　As automotive safety systems are increasingly dependent on display systems, it has become more critical that clear, uncorrupted images be presented to the driver. Missing frames, frozen images, and even incorrect warning icons can seriously compromise driver safety. The RAA278830 addresses these concerns with Functional Safety features built into the device specifically to avoid any corruption of images through monitoring of the signal integrity as well as the video content itself. The internal diagnostics and measurement engines can detect frozen video, incorrect colors, broken or corrupt video images, as well as flashing, flickering, and video images that could obstruct the driver’s view of the road (in the case of HUD systems).　　Renesas’ Automotive Video Signal Processing Expertise　　Renesas has a long and successful track record of providing video signal processing solutions for the automotive market. In addition to standard analog video decoders, Renesas offers the award-winning Automotive HD-Link (AHL) family of products that enables high-resolution images to be transported over low-cost cables and connectors. The RAA278830 adds to Renesas’ leading line of integrated LCD controllers that have been implemented worldwide.　　Key Features of the RAA278830　　Dual Open-LDI Input/Output　　ISO 26262 Functional Safety ASIL B rating　　CRCs, parity, BIST, and redundancy safety mechanisms implemented throughout the entire data path　　Video Diagnostic Capabilities　　Input/Output monitoring of video timing, signal integrity, and content　　Flickering, flashing, occlusion, and glare detection　　Spread Spectrum for lower system level EMI profile　　Image enhancement engine for superior image quality　　Dual host interface: I2C & SPI (configurable)　　SPI-Flash based OSD as well as an embedded font based OSD　　SPI boot capability (boot from SPI Flash, no MCU needed)　　Supports multi-bank for fail-safe OTA updates　　Space-efficient 72SCQFN, 10mm x 10mm　　AEC-Q100 Grade 2 qualified　　“Our automotive customers have consistently asked us to add functional safety features to our industry-leading video processing technology,” said Jason Kim, Vice President and General Manager of the Configurable Mixed-Signal Division at Renesas. “The RAA278830 delivers all of the features needed to create safe, easy-to-implement and economical LCD display for all types of passenger vehicles.”
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Release time：2025-04-01 14:36 reading：653 Continue reading>>
ROHM’s New TVS Diodes: Supporting High-Speed CAN FD In-Vehicle Communication <span style='color:red'>System</span>s for Autonomous Driving
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ROHM’s New TVS Diodes: Supporting High-Speed CAN FD In-Vehicle Communication Systems for Autonomous Driving

　　ROHM has developed bidirectional TVS (ESD protection) diodes compatible with CAN FD (CAN with Flexible Data rate) high-speed in-vehicle communication. Such protocols are seeing an increased demand in line with the ongoing advancement in autonomous driving and advanced driver assistance systems (ADAS). CAN FD is a crucial communication technology for safe, real-time data transmission between ECUs (Electronic Control Units) in vehicles. The new products achieve high-quality in-vehicle transmission by protecting electronic devices such as ECUs from surges and electrostatic discharge (ESD) while maintaining signal integrity in high-speed communication systems such as CAN FD.　　The rapid evolution of autonomous driving technology and ADAS is boosting the demand for faster, more reliable automotive communication. Autonomous driving in particular requires quick and accurate processing of vast amounts of data from sensors such as cameras, LiDAR and radar - leading to the adoption of CAN FD that enables faster, higher capacity data transfer compared to traditional CAN used in automotive communication.　　At the same time, to achieve high-speed in-vehicle communication, it is necessary to ensure stable transmission even under harsh environments. This has led to a growing demand for protection components that offer low terminal capacitance along with superior surge current rating and clamping voltage performance. As a result, the market for TVS diodes for automotive communication is expected to continue to grow in the future.　　To meet market needs, ROHM developed the ESDCANxx series that combines low terminal capacitance with excellent surge tolerance. Two package types are available: SOT-23 (2.9mm × 2.4mm) and DFN1010 (1.0mm × 1.0mm), both supporting standoff voltages (VRWM) of 24V and 27V. The SOT-23 package includes four models: 24V ESDCAN24HPY / ESDCAN24HXY and 27V ESDCAN27HPY / ESDCAN27HXY. Similarly, the DFN1010 package is also offered in four models: 24V ESDCAN24YPA / ESDCAN24YXA and 27V ESDCAN27YPA / ESDCAN27YXA, totaling 8 products in the lineup.　　The new products feature an optimized element structure that reduces terminal capacitance to a maximum of 3.5pF, preventing signal degradation during high-speed communication. High surge tolerance is also achieved, significantly improving the protection of electronic devices in automotive environments. For example, the 27V products of the DFN1010 package delivers approx. 3.2 times higher surge current rating and 16% lower clamping voltage compared to standard CAN FD-compatible products. This effectively safeguards expensive surge-sensitive electronic devices such as in-vehicle ECUs, ensuring high reliability even under harsh automotive environments. Going forward, ROHM will continue to develop products that support even faster in-vehicle communication in autonomous driving and communication environments - contributing to realizing a safer, more advanced mobility society.　　Application Examples        • Autonomous driving and Advanced Driver Assistance Systems (ADAS)　　• Automotive electric powertrain systems　　• In-vehicle infotainment systems　　Online Distributor Information        Sales Launch Date: December 2024　　Pricing: $0.9/unit (excluding tax)　　Target Products　　SOT23 Package: ESDCAN24HPY, ESDCAN24HXY, ESDCAN27HPY, ESDCAN27HXY　　DFN1010 Package: ESDCAN24YPA, ESDCAN24YXA, ESDCAN27YPA, ESDCAN27YXA　　Terminology         CAN FD (CAN with Flexible Data Rate)　　An extension of the CAN (Controller Area Network) standard, CAN FD offers faster data transfer speeds compared to conventional CAN, enabling the exchange of large volumes of data. Real-time communication between multiple in-vehicle electronic units (ECUs) is essential in systems like autonomous driving and ADAS.　　TVS Diode (Transient Voltage Suppression Diode)　　A semiconductor device designed to protect circuits from overvoltage, surges, and electrostatic discharge (ESD). TVS diodes absorb sudden voltage and current spikes (surges) to prevent circuit damage and malfunction. In automotive environments, safeguarding against severe electrical fluctuations is crucial.　　Terminal Capacitance　　Unwanted capacitance components that arise in electronic parts. When terminal capacitance is high, signal degradation occurs during high-speed transmission, making it important to reduce terminal capacitance for in-vehicle communication　　Surge Current Rating　　The maximum surge current a TVS diode can withstand. The higher the surge current rating, the stronger the protection against severe electrical fluctuations in automotive environments.　　Clamping Voltage　　The voltage maintained in the circuit when the TVS diode suppresses overvoltage caused by surges or other transient events. A lower clamping voltage provides more effective protection for circuits and devices, increasing the reliability of automotive equipment.
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Release time：2025-03-11 09:29 reading：607 Continue reading>>
ROHM’s New SiC Schottky Barrier Diodes for High Voltage xEV <span style='color:red'>System</span>s: Featuring a Unique Package Design for Improved Insulation Resistance
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ROHM’s New SiC Schottky Barrier Diodes for High Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance

　　ROHM has developed surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing the creepage distance between terminals. The initial lineup includes eight models - SCS2xxxNHR - for automotive applications such as onboard chargers (OBCs), with plans to deploy eight models - SCS2xxxN - for industrial equipment such as FA devices and PV inverters in December 2024.　　The rapidly expanding xEV market is driving the demand for power semiconductors, among them SiC SBDs, that provide low heat generation along with high-speed switching and high-voltage capabilities in applications such as onboard chargers. Additionally, manufacturers increasingly rely on compact surface mount devices (SMDs) compatible with automated assembly equipment to boost manufacturing efficiency. Compact SMDs tend to typically feature smaller creepage distances, fact that makes high-voltage tracking prevention a critical design challenge.　　As leading SiC supplier, ROHM has been working to develop high-performance SiC SBDs that offer breakdown voltages suitable for high-voltage applications with ease of mounting. Adopting an optimized package shape, it achieves a minimum creepage distance of 5.1mm, improving insulation performance when contrasted with standard products.　　The new products utilize an original design that removes the center pin previously located at the bottom of the package, extending the creepage distance to a minimum of 5.1mm, approx. 1.3 times greater than standard products. This minimizes the possibility of tracking (creepage discharge) between terminals, eliminating the need for insulation treatment through resin potting when surface mounting the device on circuit boards in high voltage applications. Additionally, the devices can be mounted on the same land pattern as standard and conventional TO-263 package products, allowing an easy replacement on existing circuit boards.　　Two voltage ratings are offered, 650V and 1200V, supporting 400V systems commonly used in xEVs as well as higher voltage systems expected to gain wider adoption in the future. The automotive-grade SCS2xxxNHR are AEC-Q101 qualified, ensuring they meet the high reliability standards this application sector demands.　　Going forward, ROHM will continue to develop high-voltage SBDs using SiC, contributing to low energy consumption and high efficiency requirements in automotive and industrial equipment by providing optimal power devices that meet market needs.　　Application Examples◇ Automotive applications: Onboard chargers (OBCs), DC-DC converters, etc.　　◇ Industrial Equipment: AC servo motors for industrial robots, PV inverters, power conditioners, uninterruptible power supplies (UPS), and more　　Online Sales InformationAvailability: The SCS2xxxxNHR for automotive applications are available now.　　The SCS2xxxN for industrial equipment are scheduled in December 2024.　　Pricing: $10.50/unit (samples, excluding tax)　　Online Distributors: DigiKey™, Mouser™ and Farnell™　　The products will be offered at other online distributors as they become available.　　EcoSiC™ BrandEcoSiC™ is a brand of devices that leverage silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　TerminologyCreepage Distance　　The shortest distance between two conductive elements (terminals) along the surface of the device package. In semiconductor design, insulation measures with such creepage and clearance distances must be taken to prevent electric shocks, leakage currents, and short-circuits in semiconductor products.　　Tracking (Creepage Discharge)　　A phenomenon where discharge occurs along the surface of the package (insulator) when high voltage is applied to the conductive terminals. This can create an unintended conductive path between patterns, potentially leading to dielectric breakdown of the device. Package miniaturization increases the risk of tracking by reducing creepage distance.　　Resin Potting　　The process of encapsulating the device body and the electrode connections between the device and circuit with resin, such as epoxy, to provide electrical insulation. This provides durability and weather resistance by protecting against water, dust, and other environmental conditions.　　AEC-Q101 Automotive Reliability Standard　　AEC stands for Automotive Electronics Council, a reliability standard for automotive electronic components established by major automotive manufacturers and US electronic component makers. Q101 is a standard that specifically applies to discrete semiconductor products (i.e. transistors, diodes).
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Release time：2024-11-20 14:00 reading：711 Continue reading>>
Nidec’s Motor for Battery-assisted Bicycles is Adopted for Use in Taiyo Yuden’s Regenerative <span style='color:red'>System</span> that Keeps Them Running for 1,000km per Charge
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Nidec’s Motor for Battery-assisted Bicycles is Adopted for Use in Taiyo Yuden’s Regenerative System that Keeps Them Running for 1,000km per Charge

　　Nidec Corporation (TSE: 6594; OTC US: NJDCY) (“Nidec” or the “Company”) today announced that a motor that it developed for regenerative system-based battery-assisted bicycles has been adopted for use in FEREMO™, the regenerative power assistance system*1 that Taiyo Yuden Co., Ltd. (“Taiyo Yuden”) produced keeps a bicycle running for up to 1,000km on a single charge*2　　FEREMO™, the regenerative power-assisted system that Taiyo Yuden developed, uses its power-assisting motor as a generator when the person on a bicycle puts on the brake or has his/her feet off the pedals, to collect and reuse motion energy.　　This feature enables FEREMO™ to enjoy a significantly longer per-charge running distance, or up to 1,000km, than conventional power-assisting systems. In addition, with speed suppressed while the regenerative system is on, one can ride a bicycle safely even on a downhill.　　Nidec’s power-assisted bicycle motor installed in FEREMO™ was designed exclusively for the system. While conventional power-assisting systems merely engage in powered operation (i.e., driving a motor with battery-generated electricity), this new motor operates as a generator when a bicycle decelerates, engaging in regeneration (i.e., rotating a motor with external power to generate electricity). In comparison with the Company’s other existing motors, this latest model boasts 30% more regenerative electric power, which is an industry-leading power generation efficiency, to help FEREMO™ achieve the 1,000km travelling distance. Furthermore, unlike assistance-only motors, load is constantly on the motor, making it more durable, low-noise, and radiation-efficient than conventional models.　　As the world’s leading comprehensive motor manufacturer, Nidec stays committed to developing products with its technologies to make light, thin, short, and small products, as well as productivity enhancement and control technologies; and to proposing, at an overwhelming speed, revolutionary solutions that contribute to the lives of people around the world.　　*1: FEREMO™  are Taiyo Yuden Co., Ltd.’s registered trademark or trademark for use in Japan　　*2. According to Taiyo Yuden’s prototype vehicle measurement patterns (eco mode: 1,000km; middle mode: 200km; and high mode: 100km) based on the Japanese Industrial Standards
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Release time：2024-04-23 11:47 reading：1761 Continue reading>>

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