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Fibocom Unveils the First LTE Cat.1 bis Module L610-IN with IRNSS and NAVIC for India

　　Fibocom (Stock code:300638), a global leading provider of AIoT solutions and wireless communication modules, launched the L610-IN, the first LTE Cat.1 bis module that supports dual-mode, dual-frequency positioning technology with IRNSS (Indian Regional Navigation Satellite System) and NAVIC. With its precise positioning capabilities, high compatibility, and adaptability to various IoT scenarios, the L610-IN provides an efficient and cost-effective connectivity solution for the Indian IoT market. It fully complies with the AIS140 standard, empowering intelligent transformation in key sectors such as fleet management and electronic toll collection (eToll).　　The L610-IN integrates innovative IRNSS and NAVIC dual-mode, dual-frequency positioning functionality, significantly enhancing positioning accuracy and stability in India and neighboring regions. It effectively addresses the challenge of insufficient navigation signal coverage in complex environments. The module strictly adheres to the AIS140 regulations in India, ensuring compliance for applications like vehicle tracking and eToll collection, making it the ideal communication solution for smart transportation and logistics industries.　　The L610-IN features a compact LCC+LGA package with dimensions of 31mm x 28mm and is pin-to-pin compatible with Fibocom's LTE Cat.4 modules NL668/L716. This design enables customers to seamlessly transition between communication technologies while minimizing hardware modification costs. Supporting LTE/GSM networks, the module is ideal for mid-to-low-speed applications such as smart payment, shared economy, industrial IoT, asset tracking, and aftermarket automotive solutions. With additional features like VoLTE HD voice, camera support, LCD display, and multiple sensor interfaces (USB/UART/SPI/I2C/SDIO), the L610-IN delivers flexible and secure end-to-end connectivity for industry clients.　　In addition to the L610-IN for the Indian market, Fibocom has also introduced the L610-EU for Europe and the L610-LA for Latin America, covering major global operator frequency bands. These variants cater to seamless positioning and long-distance communication needs, further expanding the boundaries of smart city and intelligent tracking applications.　　The L610-IN is expected to begin CS in Q2 2025. With its high cost-efficiency and localized service capabilities, the module will accelerate the development of India's IoT ecosystem.　　Ragin Kallanmar Thodikai, Country Sales Manager of India at Fibocom, stated:　　"The launch of the L610-IN bridges the gap in the Indian market for high-precision Cat.1 bis modules while simplifying customer upgrades through technology compatibility, accelerating the global deployment of mid-to-low-speed IoT solutions."

Key word：

Fibocom

Release time：2025-07-17 16:25 reading：307 Continue reading>>

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Fibocom Debuts 5G Module FG390 Powered by MediaTek T930 Platform, Accelerating FWA Innovation with the Convergence of 5G-A and AI

　　Fibocom, a global leading provider of wireless communication modules and AI solutions, announces the launch of its 5G module FG390, developed on the advanced MediaTek T930 platform. Designed specifically for mobile broadband (MBB) terminal products focused on 5G Fixed Wireless Access (FWA), the FG390 series seeks to boost FWA industry growth across diverse applications such as CPEs, ODUs, mobile hotspot devices, enterprise gateways, and industrial gateways.　　FG390 is a highly integrated, high-performance 5G module built on MediaTek’s advanced T930 chipset, featuring cutting-edge 4nm process technology. It incorporates the MediaTek M90 5G modem alongside a quad-core ARM Cortex-A55 CPU, delivering robust functionality and full compliance with 3GPP Release 18 standards. Supporting downlink 6-carrier aggregation (6CC CA) and uplink 5-layer 3Tx transmission within the 5G NR Sub-6GHz spectrum, the FG390 achieves peak standalone (SA) downlink speeds of up to 10 Gbps and uplink speeds reaching 2.8 Gbps, providing an outstanding high-speed 5G experience. Furthermore, with 200MHz bandwidth and 8Rx technology, the module significantly enhances spectrum efficiency about 40% at cell edges, greatly extending signal coverage. Paired with a dedicated NPU chip, the FG390 powers AI-enabled gateway devices to offer advanced, intelligent network interaction capabilities.　　Amid the swift convergence of 5G-A and AI technologies, the FG390 series harnesses cutting-edge specifications, innovative features, and a comprehensive suite of peripherals to drive digital transformation and continuous innovation across both residential and enterprise applications. This breakthrough empowers telecom operators and the broader market to enhance investment efficiency and accelerate returns in the communications terminal sector.　　Leveraged by the MediaTek T930 platform, the FG390 seamlessly integrates robust 5G Release 18 protocol capabilities with exceptional cellular performance and AI-driven intelligence, setting a new benchmark for the next generation of mobile broadband terminals. Enhanced by a dedicated NPU for AI acceleration, this module empowers transformative applications across smart offices, smart homes, and smart cities. Fibocom remains dedicated to deepening the collaboration with MediaTek to drive continuous innovation in 5G technologies, products, and ecosystem development.

Key word：

Fibocom

Release time：2025-07-17 16:21 reading：359 Continue reading>>

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Murata Begins World’s First Mass Production of 47µF Multilayer Ceramic Capacitor in 0402-inch Size

　　Murata Manufacturing Co., Ltd. has begun the world’s first mass production of the 0402-inch size (1.0 × 0.5 mm) multilayer ceramic capacitors (MLCC) with a capacitance of 47µF*. The new product line, available in two variants with different temperature characteristics, is designed to advance MLCC miniaturization and enhance customer system performance.　　In recent years, high-performance IT solutions, such as those used in AI servers and data centers, have seen rapid growth. Due to the often high component density demanded by these devices, optimized component placement within limited PCB areas is paramount. As a result, there is increasing demand for capacitors that offer both miniaturization and higher capacitance, along with high reliability under high-temperature conditions caused by heat generated from PCBs and integrated circuits (ICs).　　In response to these requirements, Murata has utilized its proprietary technologies in ceramic dielectric layers and internal electrode miniaturization to facilitate the world’s first mass production of this innovative 47µF product in the compact 0402-inch size. Compared to Murata’s conventional 0603-inch size product with the same capacitance, this new capacitor reduces mounting area by approximately 60%. Additionally, it delivers about 2.1 times the capacitance of Murata’s previous 22µF product in the same 0402-inch size.　　The MLCC is available in two variants – the X5R (EIA) GRM158R60E476ME01 with an operating temperature range of -55 to +85°C, and the X6S (EIA) GRM158C80E476ME01 with an operating temperature range of -55 to +105°C. The ability to operate in environments up to 105°C, makes the X6S variant well-suited for placement near ICs, thereby contributing to improved device performance and integration. Both devices feature a ±20% tolerance and rated voltage of 2.5Vdc.　　Murata is committed to advancing miniaturized capacitors with higher capacitance and improved high-temperature reliability to meet evolving market demands. These innovations not only support the ongoing miniaturization and functional enhancement of electronic devices but also contribute to lower material usage and increased production efficiency per unit, ultimately helping reduce power consumption at Murata’s factories and lessen environmental impact.　　For inquiries regarding this product, please contact us.　　Notes　　*Based on Murata research as of July 9, 2025.

Key word：

Murata

Release time：2025-07-10 14:13 reading：331 Continue reading>>

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ROHM Releases New Level 3 SPICE Models Featuring Enhanced Simulation Speed

　　ROHM has announced the release of new Level 3 (L3) SPICE models that deliver significantly improved convergence and faster simulation performance.　　Since power semiconductor losses greatly impact overall system efficiency, simulation accuracy during the design phase is critical. ROHM’s earlier Level 1 SPICE models for SiC MOSFETs addressed this need by precisely replicating key device characteristics. However, challenges such as simulation convergence issues and prolonged computation times revealed the need for further refinement.　　The new L3 models utilize a simplified approach that maintains both computational stability and accurate switching waveforms while reducing simulation time by approximately 50% compared to the L1 models. This allows for high-accuracy transient analysis of the entire circuits at significantly faster speed, streamlining device evaluation and loss assessment in the application design phase.　　As of April 2025, ROHM has released 37 L3 models for its 4th Generation SiC MOSFETs, available for download directly from the Models & Tools section of each product page. The L1 models will continue to be offered alongside the new versions. A comprehensive white paper is also provided that facilitates model adoption.　　The models can be downloaded from the Models & Tools section on individual 4th Generation SiC MOSFET product pages　　Related Information　　• White Papers　　• Design Model Support Page　　• SiC MOSFET Technical Documentation　　Looking ahead, ROHM remains committed to advancing simulation technology to enable the design for higher-performance and more efficient applications, driving continued innovation in power conversion systems.

Key word：

ROHM

Release time：2025-07-10 13:36 reading：318 Continue reading>>

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ROHM Develops an Ultra-Compact MOSFET Featuring Industry-Leading* Low ON-Resistance Ideal for Fast Charging Applications

　　ROHM has developed a 30V N-channel MOSFET — AW2K21 — in a common-source configuration that achieves an industry-leading ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package.　　With the rise of compact devices featuring large-capacity batteries, such as smartphones, the need for fast charging functionality to shorten charging times continues to grow. These applications require bidirectional protection to prevent reverse current flow to peripheral ICs and other components when not actively supplying or receiving power. What’s more, fast charging involves high current power transfer, leading smartphone manufacturers to demand stringent specifications for MOSFETs, including a maximum current rating of 20A, breakdown voltage between 28V and 30V, and an ON-resistance of 5mΩ or less. However, meeting these requirements with standard solutions typically necessitates the use of two large low ON-resistance MOSFETs, increasing board space along with mounting complexity.　　In response, ROHM developed an ultra-compact low ON-resistance MOSFET optimized for fast high-power charging. The AW2K21 adopts a proprietary structure that enhances cell density while minimizing the ON-resistance per unit chip area. Two MOSFETs are integrated into a single package, allowing a single part to support bidirectional protection applications (commonly required in power supply and charging circuits).　　The proprietary structure also places the drain terminal on the top surface, unlike on the backside in standard vertical trench MOS structures. This enables the use of a WLCSP, which achieves a larger chip-to-package area ratio that further reduces ON-resistance per unit area. As a result, the new product not only minimizes power loss but also supports high current operation, making it ideal for high-power fast charging applications despite its ultra-compact size.　　For example, in power supply and charging circuits for compact devices, standard solutions typically require two 3.3mm × 3.3mm MOSFETs. In contrast, the AW2K21 can achieve the same functionality with a single 2.0mm × 2.0mm unit, reducing the footprint and ON-resistance by approximately 81% and 33%, respectively. Even compared to similarly sized GaN HEMTs, ON-resistance is decreased by up to 50%, contributing to lower power consumption and increased space savings across a variety of applications.　　The AW2K21 is also suitable for use as a unidirectional protection MOSFET in load switch applications, where it maintains the industry’s lowest ON-resistance. At the same time, ROHM is further pushing the limits of miniaturization with the development of an even smaller 1.2mm × 1.2mm model.　　Going forward, ROHM remains dedicated to supporting the miniaturization and energy efficiency of electronic systems through compact, high-performance solutions that contribute to the realization of a sustainable society.　　Key Product Characteristics　　Application Examples　　• Smartphones　　• VR (Virtual Reality) headsets　　• Compact printers　　• Tablets　　　　 • Wearables　　　　　　　　　　 • LCD monitors　　• Laptops　　　　 • Portable gaming consoles　　　 • Drones　　And other applications equipped with fast charging capability.　　Terminology　　MOSFET (Metal Oxide Semiconductor Field Effect Transistor)　　A field-effect transistor (FET) featuring a metal oxide semiconductor structure (the most commonly used type). It consists of three terminals: gate, drain, and source. Applying a voltage to the gate (control terminal) regulates current flow from the drain to the source.　　N-channel MOSFETs turn ON when a positive voltage is applied to the gate relative to the source. A common-source configuration MOSFET integrates two transistor elements that share a single source terminal.　　ON-Resistance　　The resistance between the Drain and Source of a MOSFET when it is in the ON state. A smaller RDS(on) reduces power loss during operation.　　Breakdown Voltage　　The maximum voltage that can be applied between the drain and source terminals of a MOSFET without causing damage. Exceeding this limit results in dielectric breakdown, potentially leading to device failure or malfunction.　　WLCSP (Wafer Level Chip Scale Package)　　An ultra-compact package in which terminals and wiring are formed directly on the wafer before separated into individual chips. Unlike general packages where the chips are cut from the wafer and then molded with resin to form terminals, WLCSP allows the package size to match the chip itself, making it possible to further reduce size.　　GaN HEMT　　GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It offers superior physical properties over conventional silicon, enabling higher frequency operation with faster switching speeds. HEMT stands for High Electron Mobility Transistor.

Key word：

ROHM

Release time：2025-07-08 17:04 reading：324 Continue reading>>

Trade news

TAIYO YUDEN: World's First Multilayer Metal Power Inductor Capable of Withstanding Temperatures up to 165°C

　　TAIYO YUDEN CO., LTD. has commercialized four items, including the multilayer metal power inductor MCOIL™ "LACNF2012KKTR24MAB" (2.0 x 1.25 x 1.0 mm, maximum height value shown), which complies with the "AEC-Q200" reliability qualification test standard for passive automotive components. Through advancements made in our proprietary metal materials and multilayer construction methods, we have achieved an upper operating temperature limit of 165°C for a multilayer metal power inductor, a world’s first *1 .　　These products are used as choke coils in DC-DC converters used in automotive engine ECUs, control systems such as BMS, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.　　By extending the upper operating temperature limit range of our conventional product "LCCNF2012KKTR24MAD" (operating temperature range: -55°C to +150°C) to 165°C, these new products are able to contribute to the miniaturization and performance enhancement of power supply circuits by enabling high-density mounting in high-temperature environments such as in automobiles.　　Mass production of these products began at our subsidiary, WAKAYAMATAIYO YUDEN CO., LTD. (Inami-cho, Hidaka-gun, Wakayama Prefecture, Japan), in April 2024. Samples are available for 50 yen per unit.　　The advancements that we have seen in recent years in electronic controls in production vehicles, as typified by ADAS units, has led to a greater number of power supply circuits on vehicles, which in turn has led to growth in the demand for power inductors that are used in these circuits. Furthermore, performance also continues to improve through functional integration, such as in integrated cockpits that combine instrument clusters and infotainment devices. While the throughput of IC chips continues to grow as these devices become increasingly multifunctional and high-performance, there is also a growing need to make on-board electronic components smaller and thinner in order to arrange devices in highly dense configurations and integrate them into single modules. Components mounted at high densities become more susceptible to the effects of heat, as their reduced volumes makes it more difficult for the heat generated by the components to dissipate. Furthermore, since ECUs are increasingly being installed in engine compartments—a high temperature environment—on-board electronic components must be able to withstand high temperatures.　　To address these challenges, TAIYO YUDEN further improved the reliability of the MCOIL™ LCCN series of multilayer metal power inductors, which had the advantage of being smaller and thinner, and launched the AEC-Q200 certified LACN series which provides an extended operating temperature range of - 55°C to +165°C.　　TAIYO YUDEN focuses on the development of products that meet market needs, and will continue to expand its power inductor product lineup.　　*1 As of May 30, 2024, according to TAIYO YUDEN study.　　■Application　　Choke coils in DC-DC converters used in automotive engine ECUs, control systems such as BMS, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.　　■Characteristics　　*2 The saturation current value (Idc1) is the DC current value having inductance decrease down to 30%. (at 20℃)　　*3 The temperature rise current value(Idc2) is the DC current value having temperature increase up to 40℃. (at 20℃)　　*4 The rated current is the DC current value that satisfies both of current value saturation current value and temperature rise current value.　　* Derating of rated current is necessary depending on the ambient temperature. Please see our website below for detailed specifications

Key word：

TAIYO

Release time：2025-05-30 14:21 reading：341 Continue reading>>

Trade news

TAIYO YUDEN Expands Lineup of Multilayer Metal Power Inductors for Smartphones

　　TAIYO YUDEN CO., LTD. has begun mass production of three products, including the LSCND1412FETR47ME (1.4 x 1.2 x 0.65 mm; maximum height shown), in its MCOIL™ LSCN series of multilayer metal power inductors.　　These power inductors are for use as choke coils in the power circuits of smartphones. Retaining the same form factor as our previous product "LSCND1412FETR47MC" (1.4 x 1.2 x 0.65 mm), the DC superposition allowable current of our new "LSCND1412FETR47ME" has been increased by 20% to 3.6 A (previously 3.0 A), and its DC resistance has been reduced by 10% to 38 mΩ (previously 42 mΩ). These improvements contribute to boosting the performance of power supply circuits in smartphones, which are becoming increasingly sophisticated and multifunctional.　　Mass production of these products commenced at our subsidiary WAKAYAMATAIYO YUDEN CO. LTD. (Inami-cho, Hidaka-gun, Wakayama Prefecture, Japan). Samples are available for 50 yen per unit.　　Technology Background　　Smartphones are becoming increasingly sophisticated, with capabilities such as AI-based image and video editing, as well as voice and text translation. At the same time, there is demand for greater efficiency in order to keep their body small, and achieve long operating times with limited battery capacity. To achieve both high performance and high efficiency, a smartphone’s processor operates at high speeds with low voltage and high current, and employs a multi-core configuration where each core is equipped with its own power supply circuit, allowing it to improve both its processing power and efficiency by switching the cores used depending on load. This trend in power supply circuits has become particularly pronounced in cutting-edge smartphones, which require both high performance and high efficiency, and in recent years has led to an increase in the adoption of small and thin low-inductance power inductors capable of handling large currents.　　To address these needs, at TAIYO YUDEN we have been using metallic magnetic materials with high DC superposition characteristics to optimize the design and other aspects of our MCOIL™ LSCN series multilayer metal power inductors—which have the advantage of allowing them to be made more compact and thinner—commercializing three products, including “LSCND1412FETR47ME,” which deliver 20% greater DC superposition allowable current and 10% smaller DC resistance compared to our previous products.　　In response to market needs, we will continue to expand and improve our product lineup with higher functionality and reliability, as well as smaller and thinner products.　　■ Application　　For use as a choke coil for power circuits in smartphones and other devices.　　■Characteristics　　*1 The saturation current value (Idc1) is the DC current value having inductance decrease down to 30%. (at 20℃)　　*2 The temperature rise current value(Idc2) is the DC current value having temperature increase up to 40℃. (at 20℃)　　*3 The rated current value is following either Idc1(max) or Idc2(max), which is the lower one.　　* “MCOIL” is a registered trademark or a trademark of TAIYO YUDEN CO., LTD. in Japan and other countries.　　* The names of series noted in the text are excerpted from part numbers that indicate the types and characteristics of the products, and therefore are neither product names nor trademarks.

Key word：

TAIYO

Release time：2025-05-30 13:51 reading：396 Continue reading>>

Trade news

EMC components: TDK offers multilayer chip beads with the industry's highest rated current of 8 A for power supply lines

　　TDK Corporation (TSE: 6762) has expanded its MPZ1608-PH series of large-current multilayer chip beads for automotive and commercial power supply lines (1.6 x 0.8 x 0.6 mm – L x W x H). Mass production of the product series began in May 2025.　　These 1608-size chip beads for power supply lines achieve a rated current of 8 A, the industry’s highest value*. Chip beads are used as noise suppression components in power and signal circuits. In a circuit with a current of 8 A or more, usually two or more chip beads must be used in parallel. This has the disadvantage that the current is not evenly distributed between the ferrite beads. TDK’s new product simplifies the circuit structure because fewer components are required compared to conventional methods, and it improves the quality of power circuits.　　The MPZ1608-PH series of products halves the component footprint in comparison with circuits using two conventional 1608-sized chip beads. Moreover, the highly reliable components with a specified operating temperature of up to +125 °C are designed to be used in high-temperature environments like automotive and industrial equipment applications.　　With TDK’s proprietary materials and structural designs adapted to market needs, the company is committed to expanding its lineup of high rated current products in the automotive, industrial equipment, and consumer equipment areas. These chip beads will serve as EMC components contributing to the enhancement of the quality of power circuits.　　Glossary　　EMC: electromagnetic compatibility　　Main applications　　Power circuit for different pieces of equipment: in-vehicle ECUs, power train, vehicle body control, automotive multimedia (telematics), base stations, PCs, servers, set-top box, smart grids, robots, smartphones, tablet devices, etc.　　Main features and benefits　　Compatible with large currents as high as 8 A　　Reduces components and footprint　　Highly reliable; can be used in high-temperature environments like automotive applications　　Key data

Key word：

TDK

Release time：2025-05-16 13:45 reading：375 Continue reading>>

Trade news

Murata Unveils High-Efficiency 1W DC-DC Converter with Reinforced Isolation and Ultra- low Capacitance

　　Murata Manufacturing has launched the NXJ1T series, a high-performance 1W DC-DC converter designed to provide reinforced isolation for communication interfaces and analog front-end (AFE) measurement circuits. With 4.2kVDC isolation (Hi Pot Test) and compliance with UL62368 safety standards, the NXJ1T series delivers exceptional electrical isolation, noise immunity, and thermal reliability for industrial, energy, and medical applications.　　As industries transition to higher voltage systems, particularly in 800V electric vehicles (EV) and supporting chargers, battery energy storage (BESS), and renewable energy infrastructure, the need for robust isolation in communication and sensing systems has become increasingly critical. Furthermore, in medical applications, where low leakage current and safety isolation are essential, reliable power solutions must also meet stringent regulatory requirements like ANSI/AAMI ES60601-1.　　Murata’s NXJ1T series addresses these challenges, offering a compact (10.55mm x 13.70mm x 4.04mm), high-performance DC-DC converter engineered for safety and durability in the most demanding environments. It features an unregulated 1W 5V input to 5V/200mA output design, ideal for embedded systems. Murata's proprietary molding technology provides the NXJ1T series with high ingress protection against dust and particulates in harsh industrial environments and extreme temperatures. During development, the DC-DC converter has successfully undergone 1,000 temperature cycles between -40°C and 125°C, demonstrating its ability to withstand the highest levels of thermal stress.　　Manufactured in the UK, the NXJ1T incorporates Murata’s proprietary block-coil transformer technology, providing high isolation, low leakage current, and exceptional performance. In contrast to many alternative solutions on the market, which utilize wireless power coils that exhibit low coupling factors, high switching frequencies (approximately 10 MHz), and low efficiencies of typically around 40-60%, Murata's block-coil transformer technology facilitates lower switching frequencies (500 kHz–2 MHz) and higher efficiencies of approximately 80%. The result is exceptional common mode transient immunity (CMTI) and significantly lower isolation capacitance, making the NXJ1T series an ideal choice for engineers requiring high-performance power isolation in electrically noisy environments.　　Each device features UL62368 recognition including reinforced insulation to 200Vrms and basic insulation to 250Vrms, providing an added layer of protection in high-voltage environments, while the under-voltage lockout (UVLO) functionality enhances operational stability, preventing erratic behavior under fluctuating power conditions. Furthermore, in medical equipment, where low leakage current is critical for patient-connected applications, the NXJ1T’s ultra-low isolation capacitance helps minimize unwanted leakage, supporting compliance with stringent safety standards like IEC 60601-1 when used within a certified system.　　With a standard industry pin out and compact surface mount device (SMD) package, the NXJ1T provides seamless system integration into applications such as CAN Bus systems in EV chargers, heavy industrial automation systems, and medical instrumentation including X-ray, laser, ultrasound, and surgical instrumentation. In these high-voltage deployments, the DC-DC converters can deliver long-term stability and safety in high-voltage applications.　　“As power system voltages continue to rise across industrial, and medical sectors, engineers require robust isolation solutions that can withstand demanding environments while maintaining efficiency,” said Ann-Marie Bayliss, Product Manager at Murata. She continued, “With its advanced transformer technology, the NXJ1T series delivers class-leading isolation, ultra-low leakage current, and high reliability, helping designers create safer and more efficient systems across a wide range of applications.”

Key word：

Murata

Release time：2025-05-07 14:48 reading：387 Continue reading>>

Trade news

Renesas Debuts New Group in Popular RA0 Series with Best-in-Class Power Consumption and Extended Temperature Range

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced the RA0E2 microcontroller (MCU) Group based on the Arm® Cortex®-M23 processor. The new, cost-competitive devices offer extremely low power consumption, extended temperature range, and a wide variety of peripheral functions and safety features.　　Renesas introduced the RA0 MCU series in 2024 and it has quickly become very popular with a wide range of customers due to its affordability and low power consumption. RA0E1 devices have already been adopted in consumer electronics, appliance and white goods, power tools, industrial monitoring and other applications.　　RA0E2 MCUs are fully compatible with RA0E1 devices, offering pin-expansion while maintaining the same peripherals and ultra-low power. This compatibility lets customers re-use existing software assets. The new devices deliver industry-leading power consumption of only 2.8mA current in active mode, and 0.89 mA in sleep mode. In addition, an integrated High-speed On-Chip Oscillator (HOCO) enables the fastest wake-up time for this class of microcontroller. The fast wake-up enables the RA0 MCUs to stay in Software Standby mode more of the time, where power consumption drops to a minuscule 0.25 µA.　　Renesas’ RA0E1 and RA0E2 ultra-low power MCUs deliver an ideal solution for battery-operated consumer electronics devices, small appliances, industrial system control and building automation application.　　Feature Set Optimized for Low Cost　　The RA0E2 devices have a feature set optimized for cost-sensitive applications. They offer a wide operating voltage range of 1.6V to 5.5V so customers don’t need a level shifter/regulator in 5V systems. The RA0 MCUs also integrate timers, serial communications, analog functions, safety functions and security functionality to reduce customer BOM cost. A wide range of packaging options is also available, including a tiny 5mm x 5mm 32-lead QFN.　　In addition, the new MCU’s high-precision (±1.0%) HOCO improves baud rate accuracy and enables designers to forego a standalone oscillator. Unlike other HOCOs in the industry, it maintains this precision in environments from -40°C to 125°C. This wide temperature range enables customers to avoid costly and time-consuming “trimming,” even after the reflow process.　　“The market reception for our RA0 Series has exceeded even our own high expectations,” said Daryl Khoo, Vice President of the Embedded Processing Marketing Division at Renesas. “The RA0E2 Group MCUs deliver the same ultra-low power and price point that have been so popular with our customers. The addition of extended temperature range and more memory opens up even more applications and use cases. We plan to further expand the RA0 product lineup, delivering optimal solutions for 8-16 bit MCU users transitioning to 32-bit MCUs.”　　Key Features of the RA0E2 Group MCUs　　Core: 32MHz Arm Cortex-M23　　Memory: Up to 128KB integrated Code Flash memory and 16KB SRAM　　Extended Temperature Range: Ta -40°C to 125°C　　Timers: Timer array unit (16b x 8 channels), 32-bit interval timer (8b x 4 channels), RTC　　Communications Peripherals: 3 UARTs, 2 Async UART, 6 Simplified SPIs, 2 I2C, 6 Simplified I2Cs　　Analog Peripherals: 12-bit ADC, temperature sensor, internal reference voltage　　Safety: SRAM parity check, invalid memory access detection, frequency detection, A/D test, output level detection, CRC calculator, register write protection　　Security: Unique ID, TRNG, AES libraries, Flash read protection　　Packages: 32- and 48-lead QFNs, 32-, 48-, and 64-pin LQFP　　The new RA0E2 Group MCUs are supported by Renesas’ Flexible Software Package (FSP). The FSP enables faster application development by providing all the infrastructure software needed, including multiple RTOS, BSP, peripheral drivers, middleware, connectivity, networking, and security stacks as well as reference software to build complex AI, motor control and cloud solutions. It allows customers to integrate their own legacy code and choice of RTOS with FSP, thus providing full flexibility in application development. Using the FSP will ease migration of RA0E1 designs to larger RA0E2 devices if customers wish to do so.　　Availability　　The RA0E2 Group MCUs are available now, along with the FSP software and the RA0E2 Fast Prototyping Board. Samples and kits can be ordered either on the Renesas website or through distributors. More information on the new MCUs is available at renesas.com/RA0E2.　　Renesas MCU Leadership　　The world leader in MCUs, Renesas ships more than 3.5 billion units per year, with approximately 50% of shipments serving the automotive industry, and the remainder supporting industrial and Internet of Things applications as well as data center and communications infrastructure. Renesas has the broadest portfolio of 8-, 16- and 32-bit devices, delivering unmatched quality and efficiency with exceptional performance. As a trusted supplier, Renesas has decades of experience designing smart, secure MCUs, backed by a dual-source production model, the industry’s most advanced MCU process technology and a vast network of more than 250 ecosystem partners. For more information about Renesas MCUs, visit renesas.com/MCUs.

Key word：

Renesas

Release time：2025-04-29 10:54 reading：603 Continue reading>>

model	brand	Quote
MC33074DR2G	onsemi
RB751G-40T2R	ROHM Semiconductor
CDZVT2R20B	ROHM Semiconductor
TL431ACLPR	Texas Instruments
BD71847AMWV-E2	ROHM Semiconductor

model	brand	To snap up
TPS63050YFFR	Texas Instruments
BP3621	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
BU33JA2MNVX-CTL	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
ESR03EZPJ151	ROHM Semiconductor

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