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Renesas Sets New MCU Performance Bar with 1-GHz RA8P1 Devices with AI Acceleration

Unprecedented 7300+ CoreMarks1 with Dual Arm CPU coresTSMC 22ULL Process Delivers High Performance and Low Power ConsumptionEmbedded MRAM with Faster Write Speeds and Higher Endurance and RetentionDedicated Peripherals Optimized for Vision and Voice AI plus Real-Time AnalyticsNew AI Software Framework Eases Development and Enables Easy Migration with MPUsLeading-Edge Security Features Ensure Data Privacy　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, introduced the RA8P1 microcontroller (MCU) Group targeted at Artificial Intelligence (AI) and Machine Learning (ML) applications, as well as real-time analytics. The new MCUs establish a new performance level for MCUs by combining 1GHz Arm® Cortex®-M85 and 250MHz Cortex-M33 CPU cores with the Arm Ethos™-U55 Neural Processing Unit (NPU). This combination delivers the highest CPU performance of over 7300 CoreMarks and AI performance of 256 GOPS at 500 MHz.　　Designed for Edge/Endpoint AI　　The RA8P1 is optimized for edge and endpoint AI applications, using the Ethos-U55 NPU to offload the CPU for compute intensive operations in Convolutional and Recurrent Neural Networks (CNNs and RNNs) to deliver up to 256 MACs per cycle that yield 256 GOPS performance at 500 MHz. The new NPU supports most commonly used networks, including DS-CNN, ResNet, Mobilenet TinyYolo and more. Depending on the neural network used, the Ethos-U55 provides up to 35x more inferences per second than the Cortex-M85 processor on its own.　　Advanced Technology　　The RA8P1 MCUs are manufactured on the 22ULL (22nm ultra-low leakage) process from TSMC, enabling ultra-high performance with very low power consumption. This process also enables the use of embedded Magnetoresistive RAM (MRAM) in the new MCUs. MRAM offers faster write speeds along with higher endurance and retention compared with Flash.　　“There is explosive growth in demand for high-performance edge AIoT applications. We are thrilled to introduce what we believe are the best MCUs to address this trend,” said Daryl Khoo, Vice President of Embedded Processing Marketing Division at Renesas. “The RA8P1 devices showcase our technology and market expertise and highlight the strong partnerships we have built across the industry. Customers are eager to employ these new MCUs in multiple AI applications.”　　“The pace of innovation in the age of AI is faster than ever, and new edge use cases demand ever-improving performance and machine learning on-device,” said Paul Williamson, Senior Vice President and General Manager, IoT Line of Business at Arm. “By building on the advanced AI capabilities of the Arm compute platform, Renesas’ RA8P1 MCUs meet the demands of next generation voice and vision applications, helping to scale intelligent, context-aware AI experiences.”　　“It is gratifying to see Renesas harness the performance and reliability of TSMC 22ULL embedded MRAM technology to deliver outstanding results for its RA8P1 devices,” said Chien-Hsin Lee, Senior Director of Specialty Technology Business Development at TSMC. “As TSMC continues to advance our embedded non-volatile memory (eNVM) technologies, we look forward to strengthening our long-standing collaboration with Renesas to drive innovation in future groundbreaking devices.”　　Robust, Optimized Peripheral Set for AI　　Renesas has integrated dedicated peripherals, ample memory and advanced security to address Voice and Vision AI and Real-time Analytics applications. For vision AI, a 16-bit camera interface (CEU) is included that supports sensors up to 5 megapixels, enabling camera and demanding Vision AI applications. A separate MIPI CSI-2 interface offers a low pin-count interface with two lanes, each up to 720Mbps. In addition, multiple audio interfaces including I2S and PDM support microphone inputs for voice AI applications.　　The RA8P1 offers both on-chip and external memory options for efficient, low latency neural network processing. The MCU includes 2MB SRAM for storing intermediate activations or graphics framebuffers. 1MB of on-chip MRAM is also available for application code and storage of model weights or graphics assets. High-speed external memory interfaces are available for larger models. SIP options with 4 or 8 MB of external flash in a single package are also available for more demanding AI applications.　　New RUHMI Framework　　Along with the RA8P1 MCUs, Renesas has introduced RUHMI (Renesas Unified Heterogenous Model Integration), a comprehensive framework for MCUs and MPUs. RUHMI offers efficient AI deployment of the latest neural network models in a framework agnostic manner. It enables model optimization, quantization, graph compilation and conversion, and generates efficient source code. RUHMI provides native support for machine-learning AI frameworks such as TensorFlow Lite, Pytorch & ONNX. It also provides the necessary tools, APIs, code-generator, and runtime needed to deploy a pre-trained neural network, including ready-to-use application examples and models optimized for RA8P1. RUHMI is integrated with Renesas’s own e2Studio IDE to allow seamless AI development. This integration will facilitate a common development platform for MCUs and MPUs.　　Advanced Security Features　　The RA8P1 MCUs provide leading-edge security for critical applications. The new Renesas Security IP (RSIP-E50D) includes numerous cryptographic accelerators, including CHACHA20, Ed25519, NIST ECC curves up to 521 bits, enhanced RSA up to 4K, SHA2 and SHA3. In concert with Arm TrustZone®, this provides a comprehensive and fully integrated secure element-like functionality. The new MCUs also provides strong hardware Root-of-Trust and Secure Boot with First Stage Bootloader (FSBL) in immutable storage. XSPI interfaces with decryption-on-the-fly (DOTF) allow encrypted code images to be stored in external flash and decrypted on the fly as it is securely transferred to the MCU for execution.　　Ready to Use Solutions　　Renesas provides a wide range of easy-to-use tools and solutions for the RA8P1 MCUs, including the Flexible Software Package (FSP), evaluation kits and development tools. FreeRTOS and Azure RTOS are supported, as is Zephyr. Several Renesas software example projects and application notes are available to enable faster time to market. In addition, numerous partner solutions are available to support development with the RA8P1 MCUs, including a driver monitoring solution from Nota.AI and a traffic/pedestrian monitoring solution from Irida Labs. Other solutions can be found at the Renesas RA Partner Ecosystem Solutions Page.　　Key Features of the RA8P1 MCUs　　Processors: 1GHz Arm Cortex-M85, 500MHz Ethos-U55, 250 MHz Arm Cortex-M33 (Optional)　　Memory: 1MB/512KB On-chip MRAM, 4MB/8MB External Flash SIP Options, 2MB SRAM fully ECC protected, 32KB I/D caches per core　　Graphics Peripherals: Graphics LCD controller supporting resolutions up to WXGA (1280x800), parallel RGB and MIPI-DSI display interfaces, powerful 2D Drawing engine, parallel 16bit CEU and MIPI CSI-2 camera interfaces, 32bit external memory bus (SDRAM and CSC) interface　　Other Peripherals: Gigabit Ethernet and TSN Switch, XSPI (Octal SPI) with XIP and DOTF, SPI, I2C/I3C, SDHI, USBFS/HS, CAN-FD, PDM and SSI audio interfaces, 16bit ADC with S/H circuits, DAC, comparators, temperature sensor, timers　　Security: Advanced RSIP-E50D cryptographic engine, TrustZone, Immutable storage, secure boot, tamper resistance, DPA/SPA attack protection, secure debug, secure factory programming, Device Lifecycle management　　Packages: 224BGA, 289BGA

Key word：

Renesas

Release time：2025-07-04 14:56 reading：392 Continue reading>>

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Fibocom Releases 5G AI Mobile Hotspot Solution, Unlocking Intelligent Future for Mobile Broadband Devices

　　As 5G and AI technologies continue to converge, demand is growing for stable, high-speed, and intelligent mobile networks across various scenarios—from business travel and outdoor operations to global connectivity. Fibocom’s latest 5G AI Mobile Hotspot solution redefines the mobile broadband experience with cutting-edge technology and forward-thinking design.　　Powered by Qualcomm’s advanced 4nm QCM4490 platform, the solution combines smartphone-grade ultra-low power consumption with precision circuit design. This results in a powerful yet energy-efficient platform that balances high performance with cost optimization.　　In terms of connectivity, the solution supports 3GPP Release 16 and NR 2CC 120MHz. It delivers a downlink speed of up to 2.3 Gbps in SA mode and 2.5 Gbps in NSA mode. Customers can flexibly configure the solution with either AX3600-based Wi-Fi 6E or BE5800-based Wi-Fi 7 options. It supports dual-band simultaneous (DBS) modes of 2.4GHz+5GHz or 2.4GHz+6GHz, as well as high-band simultaneous (HBS) mode of 5GHz+6GHz.　　Tailored for Mobile Hotspot applications, the solution runs an optimized Android 13 OS, significantly boosting system performance while reducing power consumption. With USB 3.1 support and a theoretical data transfer rate of up to 5 Gbps, it’s well-suited not only for 5G Mobile Hotspot devices but also for other mobile broadband terminals such as USB dongles.　　Crucially, the solution leverages the QCM4490’s heterogeneous computing architecture, featuring a robust 8-core CPU (2x Cortex-A78 @ 2.4GHz + 6x Cortex-A55 @ 2.0GHz) and integrated Adreno 613 GPU (@ 1010MHz). Compared to GPU-less solutions, this powerful combination enables efficient on-device AI processing, expanding the possibilities for more edge intelligence applications. Internal tests have demonstrated the successful deployment of large-scale open-source AI models such as Qwen-1.8 B-Chat.　　From business office to global travel these mobile broadband applied scenarios, Fibocom’s cost-effective 5G AI Mobile Hotspot solution—with optional Wi-Fi 7 support—paves the way for a new era of AI-enhanced mobile broadband.

Key word：

Fibocom

Release time：2025-06-06 15:38 reading：443 Continue reading>>

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How Will BIWIN BGA SSD Break Through in the Intelligent Upgrade Path of Edge Devices?

　　In the wave of edge intelligence upgrades, as products are continuously evolving toward miniaturization and high integration, the device systems are confronted with dual challenges of physical space compression and surging computing power. Over the past years, BIWIN has invested significant effort in advancing research and development in storage technologies and advanced packaging and testing processes, providing it with competitive advantages in delivering tailored, miniaturized, and highly integrated storage solutions, including a diverse product portfolio, patented proprietary technologies, and a robust manufacturing and supply chain system.　　Notably, the BIWIN-launched EP410 BGA SSD, with its innovative architectural design, exemplifies a breakthrough solution for edge devices upgrades by offering three key capabilities: a compact and lightweight design, outstanding performance, and high reliability. While offering form factors as compact as those of embedded chips to meet the rigorous dimension requirements of portable devices, these SSDs are able to deliver superior performance and flexible capacity options compared to UFS/eMMC standards.　　Ultra-Thin, Compact Design to Maximize System Spatial Efficiency　　The increasing inference frequencies across smartphones and PCs have made the large capacity a fundamental configuration. Meanwhile, in order to deliver optimized user experience and robust operation under complicated environments, the terminal manufacturers are striving to achieve maximized hardware efficiency and capacity utilization within constrained system dimensions.　　Aligned with the trends in product iteration, BGA SSD EP410 is equipped with advanced packaging processes such as 16-layer die stacking and 40μm ultra-thin die, realizing the compact form factor measuring only 16×20×1.4mm—merely 1/14 the volume of conventional M.2 2280 SSDs (80×22×3.5mm). Surprisingly, it’s able to deliver uncompromising capacity up to 2TB, supporting the smooth image recognition and natural language processing in edge devices and free of capacity limitations. The adopted packaging processes not only reduces board footprint, providing more design flexibility for terminal manufacturers, but also enhances electrical performance to accommodate greater data throughput, enabling device manufacturers to develop more streamlined, competitively advantageous products.　　Uncompromised Performance, Establishing a Robust Foundation for Edge Intelligence Inference　　In terms of performance, BIWIN has harnessed its integrated R&D and packaging and testing business model, along with the optimization and tuning of firmware algorithm, to satisfy the critical demands for error correction, data security and integrity in storage products across various application scenarios.　　The BIWIN EP410 BGA SSD is compatible with PCIe 4.0 interface and NVMe protocol, with its sequential read/write speed reaching 7350MB/s and 6600MB/s respectively, far surpassing the theoretical bandwidth capability of UFS 4.0. Incorporated with self-developed flash memory management algorithm and dynamic bandwidth allocation technology, BIWIN BGA SSD has demonstrated excellent bandwidth stability, qualifying for edge intelligence devices’ access to high-speed data and transfers of high-load requirements with low latency, as well as the responsive handling of sophisticated intelligent tasks. From the application perspective, BIWIN BGA SSD has been included in the list of Google approved suppliers; on the compatibility front, it offers a cross-platform advantage, compatible with a variety of mainstream SoC solutions, which simplifies the design and introduction processes for clients.　　Intelligent Thermal Control and Reliability Design, Ensuring the Stable Operation of Critical Applications　　With the characteristics of chip miniaturization and high integration becoming more pronounced, the increases in power consumption and thermal output have presented challenges for devices’ operational stability and lifespan. Considering this, BIWIN EP410 BGA SSD has further strengthened its reliability design, verification, analysis and management processes. In order to ensure efficient heat dissipation, the product is engineered with DRAM-less architecture with intelligent thermal throttling, as well as in-house LDPC, dynamic and static wear leveling, bad block management and multi-environmental adaptability, contributing to significantly improving the data integrity and security, ensuring long-term stable operations and preventing disconnection during critical usage scenarios including gaming, productivity applications, and content creation.　　Having been subjected to BIWIN’s thorough testing procedures, including electrical performance, SI, application, compatibility, and reliability testings, the products have been validated with their MTBF exceeding 1,500,000 hours and operating temperature ranging from 0℃ to 70℃, enabling the flagship intelligent terminals, for example the 2-in-1 laptops, UAVs, automotive IVI, to catch the wave of edge intelligence upgrades.　　Conclusion　　From the successful mass production of its first PCIe BGA SSD in 2018 to the latest generation EP410 BGA SSD featuring the PCIe Gen4 x4 interface, BIWIN’s continuously evolving products demonstrate its deep expertise in miniaturization and high-integration technologies, while also highlighting its visionary foresight in the ecosystem of edge intelligence. As AI and storage technologies progress toward deeper ecological integration, BIWIN will further leverage its early-mover advantages in mobile terminal storage chips and extend this advantage into the edge intelligence era. Whether in hardware design, software optimization, or ecosystem construction, BIWIN remains committed to advancing industry progress and delivering increasingly intelligent, efficient, and reliable storage solutions to users.

Key word：

BIWIN

Release time：2025-03-20 14:01 reading：555 Continue reading>>

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ROHM Offers the Industry’s Smallest* Terahertz Wave Oscillation and Detection Devices

　　ROHM has begun offering samples of the industry’s smallest* terahertz (THz) wave oscillation and detection devices utilizing semiconductor elements known as Resonant Tunneling Diodes (RTDs). Terahertz waves are anticipated to be applied to non-destructive testing, imaging, and sensing in the medical and healthcare sectors, as well as potentially future ultra-fast communication technologies. Providing these devices contributes to the advancement of terahertz wave applications.　　ROHM has developed a 0.5mm × 0.5mm RTD chip for terahertz wave generation and detection, capable of oscillating and detecting terahertz waves at a frequency of 320GHz (typ.) with an output power ranging from 10 to 20µW. ROHM will begin offering samples of this RTD element mounted in a PLCC package (4.0mm × 4.3mm) commonly used for LEDs. With an extremely compact size, typically than one-thousandth that of conventional oscillators, this innovation enables easy development of terahertz wave applications, even in space-constrained environments.　　By positioning the antenna surfaces of the oscillation and detection devices facing each other 10mm apart, a dynamic range of 40dB (typ.) can be achieved. Both oscillator and detector maintain a drive power consumption of 10mW (typ.), while their ability to oscillate and detect terahertz waves at room temperature eliminates the need for cooling equipment required with some conventional methods. These compact, power-saving devices are almost unaffected by the operating environment, enabling use in a wide range of applications.　　ROHM offers samples of terahertz wave oscillation and detection devices at a sample price of $990.0/unit (excluding tax), which is less than one-tenth the price of conventional devices. ROHM also provides evaluation kits that include an evaluation board and other components, allowing users to easily integrate the devices into a research and development environment. For more information, please contact a sales representative or visit the contact page on ROHM’s website. The sale of sample products and evaluation kits requires the prior signing of a non-disclosure agreement (NDA) with ROHM.　　Professor Safumi Suzuki, Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Integrated Research, Institute of Science Tokyo “Terahertz waves are expected to be applied to various fields such as imaging, sensing, and wireless communications due to their excellent characteristics and high degree of safety. However, research and development for commercialization has traditionally required large-scale equipment and substantial costs.　　In this context, the RTD terahertz wave device - developed through years of collaborative research with ROHM - is an ultra-small 4.0mm × 4.3mm device that challenges conventional norms while featuring astonishingly low power consumption and implementation costs. With the launch of device samples, we anticipate that many private companies and research institutions will begin exploring terahertz wave research.　　We hope that the use of terahertz waves in various fields will lead to the creation of new applications with functions that were previously difficult to achieve. Going forward, we will continue to contribute to society through the development of terahertz wave devices in partnership with ROHM.”　　Ken Nakahara, General Manager of Center, ROHM Research & Development Center, ROHM Co., Ltd. “The terahertz (THz) R&D team and I are very excited and proud to have reached the point where we can bring this technology to market. We have dedicated ourselves to THz devices for about 15 years; the journey has not been easy. We gathered the forces of industry, academia, and government along the way, and have successfully established the position that ROHM holds today.　　The team understands that this announcement is just a small step toward the commercialization of THz technology, but at the same time, it is a giant leap for us. We believe that this small beginning will grow big and contribute to the well-being of our society.”　　Background and Development Summary Occupying the frequency region between radio waves and light, terahertz waves exhibit a variety of distinctive characteristics, including excellent permeability similar to radio waves, straight-line propagation akin to laser beams, and unique absorption properties for materials such as polymers. As such, they are expected to be utilized for non-destructive testing, imaging of humans and materials without the use of dangerous radiation, high-speed communication as an alternative to conventional wireless transmission, and high-resolution radar sensing. However, conventional methods often require large equipment sizes and high implementation costs often ranging from tens of thousands to hundreds of thousands of dollars, making it challenging for private companies to actively pursue research or commercialize in the field of practical terahertz applications.　　Since the late 2000s, ROHM has engaged in joint research with numerous universities and research institutes, such as the Institute of Science Tokyo and Osaka University. The key aim: developing terahertz wave oscillation and detection devices using RTD technology. ROHM is also involved in several consortia, including national projects (government R&D initiatives) sponsored by the Ministry of Internal Affairs and Communications (MIC), the National Institute of Information and Communications Technology (NICT), and the Japan Science and Technology Agency (JST), as well as the XG Mobile Promotion Forum and the Terahertz System Application Promotion Council. ROHM will continue to focus on device development while contributing to the early industrialization and social integration of terahertz technology.　　Professor Safumi Suzuki Profile Doctor of Engineering, Professor at the Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Integrated Research, Institute of Science Tokyo. His research targets the development of terahertz wave devices using resonant tunneling diodes (RTDs).　　• Career　　March 2009　: Completed a doctoral program at the Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology　　April 2009　: Assistant Professor, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology　　April 2014　: Associate Professor, Faculty of Engineering, Tokyo Institute of Technology　　August 2024　: Professor, Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Innovative Research, Tokyo Institute of Technology　　October 2024　: Professor, Laboratory for Future Interdisciplinary Research of Science and Technology, Institute of Integrated Research, Institute of Science Tokyo　　Terminology Resonant Tunneling Diode (RTD)　　A terahertz wave light source that uses semiconductor elements to provide advantages such as small size, low power consumption, and the ability to oscillate at room temperature. Following extensive research and development with various universities and research institutions, ROHM has successfully achieved in-house production of RTD devices capable of efficient terahertz wave oscillation and detection.　　PLCC　　Short for Plastic Leaded Chip Carrier, a type of IC package used for semiconductor integrated circuits.　　Conventional THz Generation Methods　　Conventional methods for generating terahertz waves include the ‘frequency multiplication’ method, which converts the frequency of an electrical signal into an integer multiple for output, and the “photomixing” method that produces terahertz waves from the difference frequency created when two laser beams of different wavelengths are mixed in a photomixer. Both approaches necessitate large or medium sized costly equipment to generate terahertz waves.　　Dynamic Range　　A performance metric for analog devices indicating the difference or ratio between the maximum and minimum values of a signal that can be handled. Like for other radio frequency applications, for terahertz waves dynamic range usually expressed in decibels (dB).

Key word：

ROHM

Release time：2025-03-14 09:40 reading：446 Continue reading>>

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Panasonic Industrial Devices HE-A General Power Relays

　　Panasonic Industrial Devices HE-A General Power Relays are high-capacity relays that can achieve 90A maximum switching current (inductive) and 110A carry current. These power relays include an optional normally closed auxiliary contact for contact position monitoring and weld detection. The HE-A power relays also include a mirror contact mechanism with an auxiliary contact compliant with IEC60947-4-1 to allow for weld detection. These power relays feature a 5kA Short Circuit Current Rating (SCCR), 310mW low coil holding power, and a 3.6mm initial minimum contact gap (Form A).The HE-A power relays are available in 12VDC and 24VDC coils, along with an optional 1Form B weld detection contact in compact 33mm x 38mm x 38.8mm size. These power relays are used in Photovoltaic (PV) inverters, solar panels, level 2 EV charging stations, and Electric Vehicle Supply Equipment (EVSE).FEATURES　　Maximum 110A carrying current suitable for high current Applications (low heat generation)　　Normally closed auxiliary contact option for weld detection　　5kA Short Circuit Current Rating (SCCR) for withstanding fault current　　90A maximum switching current (inductive)　　Contact gap (initial):　　Minimum 3.6mm for Form A　　Minimum 0.5mm for Form B (when Form A contact welded)　　1.92W low operating power (310mW holding power)　　1000MΩ minimum insulation resistance (initial)　　Maximum 30ms operate time (at rated coil voltage, at 20°C, without bounce)　　98m/s2 functional shock resistance (half-sine shock pulse: 11ms, detection time: 10µs)　　APPLICATIONS　　Photovoltaic (PV) inverters　　Industrial equipment　　Electric Vehicle Supply Equipment (EVSE)　　Solar panels　　Level 2 EV charging stations　　1 FORM A (1A) MECHANICAL DIAGRAM　　1 FORM A 1 FORM B (1A1B) MECHANICAL DIAGRAM

Key word：

Panasonic

Release time：2024-07-17 11:31 reading：1351 Continue reading>>

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Panasonic Industrial Devices PAN9019/PAN9019A Wi-Fi® Dual Band Wireless Modules

　　Panasonic Industrial Devices PAN9019/PAN9019A Series Wi-Fi® 6 Dual Band 2.4GHz to 5GHz and BLUETOOTH® 5.4® Modules are wireless radio modules with integrated Bluetooth BDR/EDR/Low Energy (LE). These modules are designed for highly integrated and cost-effective applications requiring high data rates and low power consumption. The PAN9019/PAN9019A features integrated power management, a dual-core CPU, 802.11i security standard support, and high-speed data interfaces. The modules provide a combination of Wi-Fi, Bluetooth, and 802.15.4 wireless connectivity, allowing for high throughput applications and enhanced flexibility. Panasonic Industrial Devices PAN9019/PAN9019A Series Wi-Fi 6 Dual Band 2.4GHz to 5GHz and Bluetooth 5.4 Modules are available in an M.2 form factor for use with host processors as an evaluation tool using an M.2 Key E socket.FEATURES　　Dual-band 2.4GHz to 5GHz 802.11a/b/g/n/ac/ax Wi-Fi, Bluetooth, and 802.15.41 combo module　　Supports WPA3 security　　Secured boot and firmware　　802.11e quality of service supported for multimedia application　　IEEE 802.11ax, 1x1 spatial stream with up to 600Mbps data rate　　OFDMA (UL/DL) and MU-MIMO (UL/DL)　　Bluetooth 5.4 (LE and long range)　　WCI-2- and 5-wire PTA coexistence interfaces　　SDIO 3.0, high-speed UART, and SPI2 for host processor connection general interfaces　　OS driver support for RTOS, Linux, and Android　　Available in M.2 form for evaluation with host processor using an M.2 Key E socket　　SPECIFICATIONS　　PAN9019　　NXP IW611 WLAN 2.4GHz and 5GHz, Bluetooth single-chip solution inside　　PAN9019A　　NXP IW612 WLAN 2.4GHz and 5GHz, Bluetooth and 802.15.4 single-chip solution inside　　15.3mm x 12mm x 2.5mm SMT package size　　-98dBm Rx sensitivity at IEEE 802.11b　　IEEE 802.11ax 20MHz, 40MHz, 80MHz channel bandwidth　　1.8V to 3.3V power supply range　　-40°C to +85°C operating temperature range　　BLOCK DIAGRAM　　PRODUCT OVERVIEW

Key word：

Panasonic

Release time：2024-07-15 14:05 reading：1189 Continue reading>>

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EMC Components : Guardians of Electronic Devices

　　Electromagnetic interference (EMI) is a pervasive force in our modern world. It emanates from various sources such as radio waves, power lines, and even the devices we use daily. EMI can disrupt the operation of electronic devices, causing malfunctions, data corruption, or complete failure. This interference not only affects the device itself but can also radiate outward, potentially interfering with other nearby electronic systems.　　Electromagnetic compatibility EMC components are crucial for addressing electromagnetic interference emissions and susceptibility issues. The correct selection and use of these components are prerequisites for electromagnetic compatibility design.　　Therefore, we must have a deep understanding of these components in order to design electronic and electrical products that meet standard requirements and offer the best cost-effectiveness. Each electronic component has its own characteristics, so this article will discuss some common electronic components and circuit design techniques to reduce or suppress electromagnetic compatibility issues.　　There are two basic groups of electronic components: leaded and lead-free components. Leaded components have parasitic effects, especially at high frequencies. The leads form a small inductance, approximately 1nH/mm/lead. The ends of the leads also produce a small capacitance effect, around 4pF. Therefore, the length of the leads should be kept as short as possible. Compared to leaded components, lead-free surface-mount components have smaller parasitic effects. Typical values are: 0.5nH parasitic inductance and around 0.3pF terminal capacitance.　　EMC components are specialized electronic parts designed to mitigate the effects of electromagnetic interference. They act as shields, filters, and absorbers, safeguarding sensitive electronic circuits from unwanted electromagnetic disturbances. These components come in various forms, each serving a unique purpose in the quest for electromagnetic compatibility.　　CapacitorsCapacitors are indispensable elements in EMC design, serving as robust tools for both filtering and bypassing unwanted noise and signals.　　At their core, capacitors store and release electrical energy, but in the realm of EMC, they serve a dual purpose. Firstly, capacitors act as filters, blocking high-frequency noise and interference from entering sensitive circuits. By strategically placing capacitors in signal paths or power lines, designers can effectively attenuate EMI, preserving signal integrity and device performance.　　Secondly, capacitors act as bypass components, providing a low-impedance path for high-frequency noise to dissipate harmlessly to ground. This prevents noise from propagating through the circuit and interfering with critical operations.　　Ferrite Beads and ChokesFerrite beads and chokes are passive components commonly used to suppress high-frequency noise in electronic circuits. By introducing impedance to the flow of high-frequency signals, these components effectively filter out electromagnetic interference. They are often found in power lines, signal cables, and printed circuit boards, where they help maintain signal integrity and prevent interference from disrupting sensitive electronic components.　　EMI FiltersEMI filters are active or passive devices that suppress conducted electromagnetic interference by attenuating noise on power lines and signal cables. These filters typically employ a combination of capacitors, inductors, and resistors to shunt high-frequency noise to ground, ensuring that only clean power reaches the electronic device. EMI filters are crucial in applications where strict electromagnetic compatibility standards must be met, such as medical devices, automotive electronics, and telecommunications equipment.　　InductorsInductors, vital EMC components, establish a connection between magnetic and electric fields, offering sensitivity crucial for addressing electromagnetic interference (EMI). These components, akin to capacitors, tackle various EMC challenges effectively. There are two fundamental types: open-loop and closed-loop, distinguished by their magnetic field paths. Open-loop inductors, with magnetic fields traversing air, can induce radiation and EMI concerns. Axial winding is preferable over rod or coil designs to confine the magnetic field within the core.　　Conversely, closed-loop inductors enclose the magnetic field entirely within a magnetic core, rendering them ideal for circuit design albeit pricier. Ferrite-core inductors are particularly suited for EMC applications due to their capacity to operate at high frequencies, ensuring efficient EMI suppression. In EMC endeavors, ferrite beads and clips emerge as specialized inductor types, catering to unique interference challenges.　　Shielding MaterialsShielding materials, such as conductive foils, tapes, and coatings, create a barrier between sensitive electronic components and external electromagnetic fields. They prevent electromagnetic interference from penetrating or escaping from electronic enclosures, thereby minimizing the risk of interference-induced malfunctions. Shielding materials are widely used in consumer electronics, industrial machinery, and aerospace systems to ensure reliable operation in electromagnetic environments.　　Surge SuppressorsSurge suppressors, also known as transient voltage suppressors (TVS), protect electronic circuits from voltage spikes and transient surges caused by lightning strikes, electrostatic discharge (ESD), or switching events. These components rapidly divert excess energy away from sensitive electronic components, preventing damage and ensuring the longevity of electronic devices. Surge suppressors find applications in power supplies, data communication systems, and automotive electronics, where robust protection against transient events is essential.　　ConclusionThe role of EMC components in ensuring the reliability and performance of electronic devices cannot be understated. From ferrite beads and EMI filters to shielding materials and surge suppressors, these unsung heroes silently guard our electronic world against the invisible forces of electromagnetic interference. As technology marches forward, the importance of EMC components will only continue to grow, shaping the future of electronics in an interconnected world.

Key word：

EMC Components

Release time：2024-06-03 15:43 reading：896 Continue reading>>

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Renesas Launches RZ/G3S 64-bit Microprocessor with Enhanced Peripherals for IoT Edge and Gateway Devices

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced a new 64-bit general-purpose microprocessor (MPU) for IoT edge and gateway devices that consumes significantly less power.　　As the latest addition to Renesas’ RZ/G Series MPU, the RZ/G3S is designed to meet the demanding requirements of modern IoT devices, offering power consumption as low as 10µW (microwatts) in standby mode and fast startup for the Linux operating system. The new MPU comes with a PCI Express interface that enables high-speed connectivity with 5G wireless modules. Additionally, the device boasts enhanced security features such as tamper detection to ensure data security. These features make the device ideal for IoT applications such as home gateways, smart meters, and tracking devices.　　“Renesas’ RZ/G has seen a steady increase in adoption in the global industrial human machine interface market,” said Daryl Khoo, Vice President of Embedded Processing 1st Division at Renesas. “The RZ/G3S represents the next generation products that will extend our reach to the rapidly growing 5G IoT and Gigabit Wi-Fi 7 gateway markets. Renesas has been aggressively expanding our connectivity portfolio in these markets through strategic acquisitions to offer advanced connectivity solutions that are power efficient at the system level and enhance data utilization."　　The RZ/G3S employs an Arm® Cortex®-A55 core as the main CPU with a maximum operating frequency of 1.1 GHz and two Cortex®-M33 cores as sub-CPUs operating at 250 MHz. Users can distribute the MPU’s workloads to sub-CPUs, allowing the device to efficiently handle tasks such as receiving data from sensors, controlling system functions and managing power systems. This reduces the workload on the main CPU, resulting in fewer components, lower costs and a smaller system size.　　Low-power Standby Mode with Fast Linux Startup　　The device’s newly added power management system is designed to reduce power consumption to extremely low levels -- less than 10 µW. The MPU also supports the DDR self-refresh function which allows to retain DRAM data, while also enabling fast Linux startup. The fast startup allows IoT devices, which frequently operate intermittently, to save power and significantly extend the runtime of battery-powered devices. Moreover, the device offers a standby mode that can maintain sub-CPU operation at a power level as low as 40 mW, offering the flexibility to optimize power consumption based on the specific operating requirements of each application.　　5G Connectivity Enabled by PCI Express　　The RZ/G3S is equipped with a wide range of peripheral functions including Gigabit Ethernet, CAN, USB, as well as the PCI Express interface. By connecting with 5G communication modules, the device can achieve high-speed communication at Gigahertz levels.　　High Reliability and Robust Security Functions　　Similar to other RZ/G devices, the RZ/G3S features an ECC (Error Correction Code) function in both internal memory and external DDR interface to maintain data integrity. The Verified Linux Package (VLP) based on the industrial-grade Linux software (Civil Infrastructure Platform™ (CIP) Linux) is available for the RZ/G3S. With VLP, developers receive over 10 years of maintenance support, ensuring long-term protection against security threats. The device also provides tamper detection along with secure boot, secure debug and more. RZ/G series products are already Level 2 PSA Certified from Arm and Renesas has plans to include the RZ/G3S in the future.　　“Our IAR Embedded Workbench for Arm inherently supports both MPUs and MCUs,” said Anders Holmberg, CTO at IAR. “By combining Renesas’ RZ/G3S MPU, which features a highly secure Root of Trust, with extensive security tool solutions from IAR, developers can rapidly develop high-performance, secure IoT devices and bring them to market faster."　　Winning Combinations　　Renesas has combined the new RZ/G3S MPU with optimized power management ICs and clock products to develop the “Single Board Computer Gateway”. The RZ/G3S's rich set of interfaces allows the device to connect with various sensors via USB, CAN, RS485, UART, and I2C. It also offers high performance wireless connectivity options to build a robust network for home automation or IoT applications. Its multicore design allows for real-time processing of data while being power efficient with its advanced sleep mode functions. The Winning Combinations are technically vetted system architectures from mutually compatible devices that work together seamlessly to bring an optimized, low-risk design for faster time to market. Renesas offers more than 400 Winning Combinations with a wide range of products from the Renesas portfolio to enable customers to speed up the design process and bring their products to market more quickly.　　Availability　　The RZ/G3S is available today. For more information on the product

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Renesas

Release time：2024-01-19 11:14 reading：2190 Continue reading>>

Trade news

ROHM’s New Ultra-High-Speed Gate Driver IC: Maximizing the Performance of GaN Devices

　　ROHM has developed a gate driver IC - the BD2311NVX-LB. It is optimized for GaN devices and achieves gate drive speeds on the order of nanoseconds (ns) - ideal for high-speed GaN switching. This was facilitated through a deep understanding of GaN technology and the continuing pursuit of gate driver performance. The result: fast switching with a minimum gate input pulse width of 1.25ns that contributes to smaller, more energy efficient, higher performance applications.　　In recent years, improving power conversion efficiency while reducing the size of power supply units in server systems have become important factors as the number of IoT devices continues to grow. This requires further advancements in the power device sector. At the same time, LiDAR, which is used not only for autonomous driving but also for monitoring industrial equipment and social infrastructure, demands high-speed pulsed laser light to further increase recognition accuracy.　　As these applications require the use of high-speed switching devices, in conjunction with the release of GaN devices, ROHM developed an ultra-high-speed gate driver IC that maximizes GaN performance. Going forward, ROHM continues to release smaller WLCSP products to support greater miniaturization.　　As GaN devices are sensitive towards gate input overvoltage, ROHM has developed a unique method to suppress the gate voltage overshoots and has implemented it into this driver. On top, the optimum GaN device can be selected by adjusting the gate resistance based on application requirements. ROHM also offers a lineup of GaN devices under the EcoGaN™ name - contributing to a sustainable society through power solutions when combined with gate driver ICs that maximize their performance. The gate driver BD2311NVX-LB with the unique gate overvoltage suppression feature - when used with ROHM's EcoGaN™ products - further simplifies the design and enhances application reliability.　　Professor Yue-Ming Hsin, Department of Electrical Engineering, National Central University, (Taiwan)　　“GaN devices are expected to be materials that can demonstrate performance in the high-frequency range more than silicon. In power switching applications such as DC-DC and AC-DC converters, and in LiDAR applications, the performance of GaN devices can contribute to smaller, more energy-efficient, and higher performance applications.　　On the other hand, to demonstrate the performance of GaN devices, gate driver IC that enable high-speed switching while taking into account the low drive voltage of GaN HEMTs are essential. Therefore, we turned our attention to ROHM, which aims to maximize the performance of GaN devices by developing optimized gate drive technology. Professor Yu-Chen Liu (National Taipei University of Technology) and Professor Chin Hsia (Chang Gung University), who are working together on the same project, tested ROHM’s driver IC, the BD2311NVX.　　The results showed that BD2311NVX had shorter rise time and lower ringing at 1MHz switching frequency for DC-DC converter compared to other driver ICs.　　The reduced rise time of this driver IC will help maximize the reduction in switching losses, which is an advantage of GaN. We are also looking forward to ROHM's GaN solutions, which have strengths in analog technologies in power supplies and drivers.”　　LiDAR Application Example　　Product Lineup

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ROHM

Release time：2023-11-09 16:07 reading：1741 Continue reading>>

Trade news

Expanding production capacity for SiC power devices: ROHM completes acquisition of new production site

　　ROHM has completed the acquisition of the assets of Solar Frontier’s former Kunitomi Plant located in Japan, on November 7, 2023, based on its basic agreement signed with Solar Frontier.　　The Plant will be operated by LAPIS Semiconductor, a subsidiary of the ROHM Group, as its Miyazaki Plant No.2. It will become the Group's main production site for SiC power devices and is aiming to start operation during 2024.　　The ROHM Group will continue to strengthen its production capacity in accordance with its Medium-Term Management Plan while keeping abreast of market conditions, and will also thoroughly enhance its BCM system to ensure a stable supply of products to customers.

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ROHM

Release time：2023-11-08 10:59 reading：2198 Continue reading>>

model	brand	Quote
TL431ACLPR	Texas Instruments
RB751G-40T2R	ROHM Semiconductor
BD71847AMWV-E2	ROHM Semiconductor
MC33074DR2G	onsemi
CDZVT2R20B	ROHM Semiconductor

model	brand	To snap up
ESR03EZPJ151	ROHM Semiconductor
STM32F429IGT6	STMicroelectronics
BU33JA2MNVX-CTL	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
TPS63050YFFR	Texas Instruments
BP3621	ROHM Semiconductor

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