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Driving Innovation Together: NOVOSENSE, UAES and Innoscience Join Forces to Re<span style='color:red'>shape</span> Power Electronics for New Energy Vehicles

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Driving Innovation Together: NOVOSENSE, UAES and Innoscience Join Forces to Reshape Power Electronics for New Energy Vehicles

　　September 29, 2025 – NOVOSENSE Microelectronics, United Automotive Electronic Systems (UAES) and Innoscience have signed a strategic cooperation agreement to jointly advance power electronics for new energy vehicles (NEVs). The three parties will collaborate on the development of next-generation intelligent integrated Gallium Nitride (GaN) products. Building on their combined expertise, the new devices will deliver more reliable GaN driving and protection features, enabling higher power density and paving the way for commercial adoption across the automotive industry.Signing Ceremony　　GaN as a Key Driver for NEV Innovation　　With its superior material properties, GaN is emerging as a transformative technology in automotive power electronics. Compared to traditional silicon devices, GaN significantly improves system efficiency and power density, allowing for more compact and lighter designs—addressing the core requirements of vehicle electrification and lightweighting.　　Complementary Strengths, Shared Goals　　Through joint R&D and application validation, NOVOSENSE, UAES and Innoscience aim to tackle critical challenges such as efficiency, reliability and cost. Together, the three parties will deliver solutions that combine high performance with competitive economics. NOVOSENSE brings extensive expertise in high-performance analog and mixed-signal IC design. UAES contributes deep knowledge in system integration and automotive applications. Innoscience adds world-leading competence in GaN device technology. This cross-disciplinary collaboration establishes a platform for innovation across the entire value chain, accelerating GaN adoption in next-generation automotive systems.　　Dr. Xiaolu Guo, Deputy General Manager of UAES, said:“UAES has been at the forefront of automotive electronics for decades, consistently responding to industry needs through innovation. GaN technology is a vital enabler for vehicle electrification. Partnering with NOVOSENSE and Innoscience allows us to integrate capabilities from device to system level, driving GaN industrialization and delivering efficient, reliable and cost-effective solutions for our customers.”　　Mr. Shengyang Wang, Founder, Chairman and CEO of NOVOSENSE, commented:“Upgrading the NEV industry requires deep collaboration across the value chain. By combining UAES’s system integration expertise with Innoscience’s GaN leadership and NOVOSENSE’s IC design capabilities, we are creating a powerful synergy. This strategic partnership sets a benchmark for industry collaboration, ensuring both technological breakthroughs and market value creation.”　　Dr. Jingang Wu, CEO of Innoscience, added:“The potential of GaN in automotive power electronics is only beginning to be realized. True impact will come from aligning device innovation with system requirements. We look forward to working closely with NOVOSENSE and UAES to extend the boundaries of GaN applications in automotive electrification and to translate technological advantages into tangible industry benefits.”　　A Step Forward for the Industry　　This strategic cooperation marks a pivotal milestone for all three companies. NOVOSENSE, a leading Chinese automotive semiconductor supplier with nearly one billion automotive ICs shipped, complements UAES’s strong system know-how and Innoscience’s GaN device leadership. Together, the three parties will strengthen the value chain, overcome application bottlenecks, and accelerate the transition of the NEV industry toward higher efficiency and sustainability.

Key word：

NOVOSENSE

Release time：2025-10-09 13:53 reading：447 Continue reading>>

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Fibocom Builds AI-specialized 'π' Shape Strategy upon 5G, AI, IoT to Empower Industry Transformation

　　The wave of intelligence is revolutionizing industries globally, with 5G, AI, and IoT playing key roles in this trend. During Computex 2024, Fibocom CEO - Tiger Ying shared his insights during the tradeshow.　　Fibocom, as China's first stock-listed wireless communication modules and solutions provider (stock code: 300638), has continuously employed innovative thinking and strategic market positioning in recent years. CEO Tiger Ying pointed out that, regardless of the technological or application aspects, in facing the transformative effects brought by these three major technologies, the company is well-prepared and ready to assist clients in seizing vast smart business opportunities.　　Remain Industry-Focused and is Confident to Accelerate 5G Deployment　　In the realm of 5G, this communication standard garnered significant market attention upon its release. The industry believes that 5G'sfeatures such as high speed, low latency, and large-scale connectivity not only enhance user experiences in the consumer sector but also serve as a crucial driver for deepening communication technology applications across industries.　　While the development of 5G has not been as fast as initially expected, communication giant Ericsson predicted in its 2023 report that the golden crossover period between 4G and 5G would be delayed until 2028.However, Tiger Ying pointed out that from the perspective of technical standards' development speed, this delay is still within a normal cycle.　　He mentioned that 5G's current development is focused on Enhanced Mobile Broadband (eMBB), Massive Machine Type Communications (mMTC), and Ultra-Reliable Low Latency Communications (URLLC). However, large-scale commercialization has not been achieved. This trend also highlights the versatility of 5G IoT architecture and applications.　　With the acceleration of 5G Advanced, it will truly replace4G as the mainstream technology for IoT applications and successfully drive market development within five years.　　Fibocom has responded to the trend of 5G development by formulating product strategies and solutions, actively expanding into different market sectors. Tiger Ying stated that the company's primary task is to promote the large-scale commercialization process of eMBB.　　They have already launched a diverse range of product portfolios. This includes the RedCap module, closely following the development of 5G technology and fully advancing the implementation of commercial plans.　　In terms of application areas, Fibocom is focused on industrial intelligence and smart cities, primarily because these two major application scenarios have diverse demands for 5G technology. For instance, in machine vision, which integrates edge computing with 5G's high bandwidth and low latency capabilities, it has been widely used in industrial quality inspection, promoting the development of industrial automation and intelligence.　　In response, Fibocom provides a complete product portfolio, such as the 5G smart module SC171 with computing power up to 12TOPS, to meet specific demands in application scenarios. In addition, endpoint devices with AI capabilities will also become a driving force in accelerating industrial intelligence processes.　　Fibocom has invested significant research and development resources in these products, aiming to integrate 5G and on-device AI technologies, thus strengthening the company's core competitiveness in industrial intelligence and smart city domains.　　Strengthening Edge AI Performance to Optimize Overall Cost-effectiveness　　AI has become a recent global industrial focus, and Fibocom's AI strategy centers on edge computing and the AI endpoint device solutions mentioned above. Since AI computing power can significantly increase the cost of endpoint devices, leading to reluctance from enterprises with implementation needs, cost control is crucial.　　Tiger Ying pointed out that the solution to this problem varies depending on the AI architecture. Devices using an offline AI architecture require precise control of edge computing power to balance cost and effectiveness, while devices using an online AI architecture require strong communication capabilities to avoid affecting user experience due to communication delays.　　Tiger Ying further stated that Fibocom has integrated the above two solutions into one through long-term research and development. The company has invested in smart module development, leveraging the computational efficiency and heterogeneous algorithm capabilities of modules to assist clients in rapidly deploying AI-capable terminal devices and optimizing costs.　　Its product portfolio includes 5G data modems, SoC 5G solutions based on Linux, and Android, and built-in AI computing capabilities. He mentioned that while AI may slightly increase device costs, its excellent performance leads to overall cost optimization considering macroscopic aspects such as user experience and value creation.　　He also mentioned that Fibocom has constructed heterogeneous computing on the network, enabling the scheduling of CPU, GPU, NPU, and DSP processor performance as needed. In addition, Fibocom has developed its toolchain and integrated it with heterogeneous algorithms, RTK, high-precision positioning, and other functions into firmware.　　Its products based on Linux, Android, and Windows architectures can meet the needs of different industry customers. Looking ahead, Fibocom will focus on areas such as robotic lawnmowers, low-speed autonomous vehicles, PCs, and robotic development platforms, providing deeper vertical domain solutions.　　Enhancing π-shaped Capabilities to Meet Three Major IoT Demands　　Regarding IoT, Tiger Ying pointed out that although the IoT architecture and concept have been around for over a decade and have become increasingly widespread in recent years, practical constraints mean that adoption varies across industries. To accelerate IoT adoption, several key factors are necessary.　　First is the ability to apply AI capability to IoT devices, as AI significantly impacts data collection costs and processing quality. IoT leveraging AI will be more readily accepted by enterprises, thus speeding up adoption in specific fields.　　Second is security design, which has become a major focus in IoT in recent years. Only IoT architectures that can ensure data integrity and privacy protection will be able to deploy in vertical markets.　　Lastly, communication technology is crucial. Advanced technologies like 5G-Advanced (5.5G) and Non-terrestrial Networks (NTN) ensure that communication coverage is no longer a weak point, broadening the scope of IoT applications.　　Fibocom has introduced corresponding products to address AI, data privacy, and satellite communications needs. In terms of AI, the company's 5G smart module SC171 and SC151 series are suitable for various 5G smart terminal devices.　　For security, blockchain technology was deployed on 4G networks and commercialized. On the satellite communications front, Fibocom released NTN-supported communication modules in 2023.　　Moving forward, the company plans to integrate these technologies and products, working with ecosystem partners to focus on specific vertical solutions, providing customers with high-quality and high-performance IoT solutions.　　Fibocom consistently prioritizes intelligence in product innovation. Tiger Ying stated that this will continue to be the foundation for future development, with a market-driven approach to introducing cross-domain AI solutions.　　He emphasized that while the market previously demanded "T-shaped" capabilities combining vertical telecommunication expertise to serve the horizontal industries, the AI era requires an additional vertical capability—AI specialization. Through "π-shaped" capabilities, which integrate horizontal and dual vertical expertise, Fibocom aims to create high-performance IoT architectures tailored to customers' needs.　　The company is progressively enhancing these "π-shaped" capabilities. It will continue to collaborate with ecosystem partners, integrating 5G, AI, and IoT technologies to help clients seize smart business opportunities.

Key word：

Fibocom

Release time：2024-06-06 11:47 reading：1337 Continue reading>>

High lifecycles for batteries with doughnut-<span style='color:red'>shape</span>d lithium sulphide

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High lifecycles for batteries with doughnut-shaped lithium sulphide

A “high performing”, doughnut-shaped active material structure inside a lithium-sulphur battery has been developed by the Korea Advanced Institute of Science and Technology (KAIST).This lithium-sulphur (Li-S) battery has a higher energy density and lower production cost than a lithium-ion battery (LIB), according to KAIST. Therefore, it can be used in electric vehicles (EVs) that need a longer battery life.Unfortunately, Li-S batteries are still incapable of providing a longer lifecycle due to the poor reversibility of the lithium metal cathode. To combat this problem, the researchers used lithium sulphide (Li₂S) cathodes and combined them with graphite anodes to enhance energy density and lifecycles for the batteries.Li₂S is expensive and as such there has not been an electrode architecture and electrolyte design that enables a longer lifecycle between the graphite anodes and lithium sulphide cathodes – until now.The team produced its Li₂S cathode active material from low-cost Li₂S developed from raw materials. They have also developed a Li₂S ion battery with a graphite anode and Li₂S cathode using a high concentration salt electrolyte.The team say they achieved 30% higher energy density than that of conventional LIBs and secured a lifecycle of more than 600 cycles.

Key word：

New material

Release time：2018-09-20 00:00 reading：1365 Continue reading>>

GlobalFoundries re<span style='color:red'>shape</span>s technology portfolio

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GlobalFoundries reshapes technology portfolio

GLOBALFOUNDRIES today announced an important step in its transformation, continuing the trajectory launched with the appointment of Tom Caulfield as CEO earlier this year. In line with the strategic direction Caulfield has articulated, GF is reshaping its technology portfolio to intensify its focus on delivering truly differentiated offerings for clients in high-growth markets.GF is realigning its leading-edge FinFET roadmap to serve the next wave of clients that will adopt the technology in the coming years. The company will shift development resources to make its 14/12nm FinFET platform more relevant to these clients, delivering a range of innovative IP and features including RF, embedded memory, low power and more. To support this transition, GF is putting its 7nm FinFET program on hold indefinitely and restructuring its research and development teams to support its enhanced portfolio initiatives. This will require a workforce reduction, however a significant number of top technologists will be redeployed on 14/12nm FinFET derivatives and other differentiated offerings.“Demand for semiconductors has never been higher, and clients are asking us to play an ever-increasing role in enabling tomorrow’s technology innovations,” Caulfield said. “The vast majority of today’s fabless customers are looking to get more value out of each technology generation to leverage the substantial investments required to design into each technology node. Essentially, these nodes are transitioning to design platforms serving multiple waves of applications, giving each node greater longevity. This industry dynamic has resulted in fewer fabless clients designing into the outer limits of Moore’s Law. We are shifting our resources and focus by doubling down on our investments in differentiated technologies across our entire portfolio that are most relevant to our clients in growing market segments.”In addition, to better leverage GF’s strong heritage and significant investments in ASIC design and IP, the company is establishing its ASIC business as a wholly-owned subsidiary, independent from the foundry business. A relevant ASIC business requires continued access to leading-edge technology. This independent ASIC entity will provide clients with access to alternative foundry options at 7nm and beyond, while allowing the ASIC business to engage with a broader set of clients, especially the growing number of systems companies that need ASIC capabilities and more manufacturing scale than GF can provide alone.GF is intensifying investment in areas where it has clear differentiation and adds true value for clients, with an emphasis on delivering feature-rich offerings across its portfolio. This includes continued focus on its FDXTM platform, leading RF offerings (including RF SOI and high-performance SiGe), analog/mixed signal, and other technologies designed for a growing number of applications that require low power, real-time connectivity, and on-board intelligence. GF is uniquely positioned to serve this burgeoning market for “connected intelligence,” with strong demand in new areas such as autonomous driving, IoT and the global transition to 5G.“Lifting the burden of investing at the leading edge will allow GF to make more targeted investments in technologies that really matter to the majority of chip designers in fast-growing markets such as RF, IoT, 5G, industrial and automotive,” said Samuel Wang, research vice president at Gartner. “While the leading edge gets most of the headlines, fewer customers can afford the transition to 7nm and finer geometries. 14nm and above technologies will continue to be the important demand driver for the foundry business for many years to come. There is significant room for innovation on these nodes to fuel the next wave of technology.”

Key word：

GlobalFoundries

Release time：2018-08-29 00:00 reading：1610 Continue reading>>

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Berkeley Builds Shape-shifting Molecular Memory

　　As CMOS approaches the atomic scale, a molecular-sized shape-changing memory technology is being perfected that reversibly changes the crystalline-lattice structure of molybdenum ditelluride. The approach, which requires only a few atoms to store ones and zeroes as shapes, could enable solid-state memories that store mechanical qualities and match the scale of future atomic-level processors, according to professor Xiang Zhangat the University of California, Berkeley, where he is director of materials science at Lawrence Berkeley National Laboratory.　　The technology uses electron injection — not to encode the memory as charge, spin, or any ephemeral quantity, but rather to change the crystalline lattice structure of MoTe2 in a reversible process. Rearranging the atomic structure via electrical stimulation changes the material’s properties, thus allowing ones and zeroes to be formed and sensed using far less energy than is required for shifting chemical properties or for thermally induced transitions, as in phase-change memories, according to Zhang.　　The key to the process is the use of a transition-metal dichalcogenide (TMD) — in this case, MoTe2 — whose atomically thin monolayer films allow its internal lattice structure to be altered with electronic pulses that shift the structure between two stable states. In the example MoTe2 film used by Zhang and his co-researchers at UC-Berkeley and Berkeley National Lab, the two stable lattice structures are the symmetric 2H arrangement and its slanted counterpart, 1T.　　The Berkeley researchers are experimenting with various TMDs as target materials for their electron-injection method of shape-changing crystalline lattice structures, but MoTe2 is favored because it has both electronic and photonic properties that can be changed. Their goal is to create a library of “designer films” that can be used in both computer and optical applications, including solar panels.　　The electronic and optical properties that can be electronically changed in the 2-D, monolayer TMD films include electrical resistance, spin transport, and the phase-related shape \changes used in the Berkeley approach.　　The researchers’ proof of concept used “electrostatic doping,” with electrons, instead of atoms, serving as the dopant, according to Zhang. After coating the MoTe2 monolayer with an ionic liquid, they used the injected-electron dopant to change the crystalline lattice’s shape, reportedly without creating defects in the material. The resultant 1T structure is slanted and metallic, allowing it to be easily differentiated from the semi-metallic 2H atomic lattice arrangement. Removing the dopant electrons by applying a lower voltage reinstates the original, 2H structure.　　The U.S. Department of Energy funded the project. The DoE’s Office of Basic Energy Sciences performed the transport studies, and its Light-Material Interactions in Energy Conversion Frontier Research Center performed the optical measurements. The DOE Energy Frontier Research Centers and the National Science Foundation (NSF) supported the project through device design and fabrication. China’s Tsinghua University provided reference materials. Researchers at Stanford University also contributed, with funding from the Army Research Office, the Office of Naval Research, NSF, and a Stanford Graduate Fellowship.

Key word：

Berkeley,Molecular Memory

Release time：2017-12-27 00:00 reading：1533 Continue reading>>

Perovskites change <span style='color:red'>shape</span> when exposed to light

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Perovskites change shape when exposed to light

　　Perovskite crystals can change shape in response to light according to researchers at King Abdullah University of Science and Technology.They believe the crystals could form the heart of novel light-activated devices.　　Photostriction is the property of certain materials to undergo a change in internal strain,and therefore shape,with exposure to light.Organic photostrictive materials are said to offer the greatest shape change in response to light–a parameter known as the photostrictive coefficient–but their response is slow and unstable under ambient conditions.　　While searching for photostriction in new materials,the researchers found that the perovskite called MAPbBr3 revealed strong and robust photostriction behaviour.　　To extensively test the material’s photostriction capabilities,the team developed a new method using Raman spectroscopy,which probes the molecular vibrations within the structure.When bathed in light,photostriction alters the internal strain in the material,which then shifts the internal pattern of vibrations.By measuring the shift in the Raman signal when the material was placed under mechanical pressure,the team could calibrate the technique and use it to quantify the effect of photostriction.　　“We demonstrated that in situ Raman spectroscopy with confocal microscopy is a powerful characterisation tool for measuring intrinsic photoinduced lattice deformation,”says electrical engineer Tzu-Chiao Wei.　　According to the researchers,the perovskite material possesses a significant photostriction coefficient of 1.25%.The spontaneous generation of positive and negative charges when the perovskite is bathed in light polarises the material,which induces a movement in the ions in the material.　　“We could use this material to fabricate next-generation optoelectronic devices,including wireless remote switchable devices and other light-controlled applications,”Wei concludes.

Key word：

Perovskites,shape,light

Release time：2017-08-31 00:00 reading：1305 Continue reading>>

model	brand	Quote
TL431ACLPR	Texas Instruments
BD71847AMWV-E2	ROHM Semiconductor
CDZVT2R20B	ROHM Semiconductor
RB751G-40T2R	ROHM Semiconductor
MC33074DR2G	onsemi

model	brand	To snap up
TPS63050YFFR	Texas Instruments
ESR03EZPJ151	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
STM32F429IGT6	STMicroelectronics
BU33JA2MNVX-CTL	ROHM Semiconductor
BP3621	ROHM Semiconductor

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