如何降低电源的开关损耗？

Release time：2025-05-22
author：AMEYA360
source：网络
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　　开关电源使用过程中有开关损耗，若其开关损耗过大，容易影响整体效率。为了提升电源性能，工程师需要在电源设计合理降低MOSFET和二极管的开关损耗，如何做到？

如何降低电源的开关损耗？

　　01选择低导通电阻RDS(ON)的MOSFET

　　具体选择：优先选用具有低RDS(ON)值的MOSFET，同时考虑芯片尺寸与漏源极击穿电压(VBR(DSS))的平衡，以达到最优的导通损耗。

　　温度管理：保持MOSFET的结温在较低水平，以减少RDS(ON)的温漂影响。

　　栅极电压优化：使用足够大的栅极电压以降低RDS(ON)，但需权衡栅极驱动损耗的增加。

　　02优化MOSFET的开关速度

　　降低米勒电容：选择具有低米勒电容(CRSS或CGD)的MOSFET，以减少开关过程中的充电时间和损耗。

　　开关频率调整：根据MOSFET的电容特性，谨慎选择电路的开关频率，以平衡开关损耗和传导损耗。

　　03选择合适的二极管

　　低VF二极管：对于小尺寸、低额定电压的应用，选择导通压降VF较低的二极管。

　　快恢复二极管：根据需求选择快恢复二极管或超高速快恢复二极管，以降低反向恢复时间和损耗。

　　肖特基二极管应用：在低压低功耗应用中，考虑使用肖特基二极管，其反向恢复时间几乎为零，VF也较低。

　　04采用同步整流技术

　　MOSFET替代二极管：在同步整流架构中，用MOSFET替代二极管，与主MOSFET同步工作，以降低传导损耗。

　　同步整流MOSFET选择：选择具有低RDS(ON)的同步整流MOSFET，并确保其驱动功耗在可接受范围内。


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