Samsung’s 2Q Operating Profit Soars 1,810% to Record KRW 89.4T, Reportedly Surpassing NVIDIA and Apple

Release time：2026-07-08
author：AMEYA360
source：TrendForce
reading：152

Samsung’s 2Q Operating Profit Soars 1,810% to Record KRW 89.4T, Reportedly Surpassing NVIDIA and Apple

　　Amid surging DRAM and NAND prices, Samsung’s newly released second-quarter earnings guidance once again exceeded market expectations. According to the the company, cited by Hankyung, preliminary second-quarter operating profit reached KRW 89.4 trillion (US$65.6 billion), up 1,810.3% year over year. According to News 1, this would translate into an operating profit margin of 52.3%.

　　Hankyung notes that the result marks Samsung’s highest quarterly operating profit on record, extending its record-breaking earnings streak to three consecutive quarters. ZDNet further highlights that the figure surpasses the quarterly operating profits of U.S. tech giants NVIDIA and Apple.

　　Samsung’s record-breaking performance marks the highest quarterly operating profit ever reported by a global IT company, according to ZDNet, surpassing NVIDIA’s previous record of US$53.5 billion (approximately KRW 81.9 trillion) posted in the first quarter of fiscal 2027 (ended April 2026).

　　The scale of the earnings surge is further underscored by comparisons with Samsung’s past performance. The company posted operating profit of just KRW 4.7 trillion in the same period last year, while its projected 2Q26 operating profit alone surpassed Samsung’s cumulative operating profit over the entire three-year period from 2023 to 2025, according to Reuters.

　　Meanwhile, the company’s preliminary second-quarter revenue came in at roughly KRW 171 trillion, up 129.3% from a year earlier, Hankyung notes.

　　Memory Prices Fuel Samsung’s Record Quarter

　　The strong results were primarily driven by Samsung’s booming memory semiconductor business within its Device Solutions (DS) division, with industry observers noting that the company has been a major beneficiary of surging memory prices.

　　According to ZDNet, average selling prices (ASPs) reportedly climbed more than 50% quarter over quarter for DRAM and over 60% for NAND. A separate ZDNet report also points out that the momentum is expected to continue, as Samsung Electronics is negotiating aggressively with customers to raise its third-quarter DRAM ASP by as much as 20% from the previous quarter.

　　This strong performance aligns with TrendForce’s latest memory pricing survey, which indicates that the DRAM market will remain extremely tight in the third quarter of 2026, with contract DRAM prices expected to rise another 13–18%.

　　However, Reuters also notes that despite another strong quarter expected from its memory business, losses in Samsung’s foundry and System LSI operations are likely to deepen, as employee bonus expenses continue to be allocated across the broader semiconductor division.


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Samsung Reportedly Seeks Up to 20% 3Q26 DRAM Price Increase; LPDDR Hikes May Exceed 20%
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Samsung Reportedly Seeks Up to 20% 3Q26 DRAM Price Increase; LPDDR Hikes May Exceed 20%

　　Samsung is reportedly pushing for another wave of memory price increase in 3Q26. According to ZDNet, Samsung Electronics is negotiating aggressively with customers to raise its third-quarter DRAM average selling price (ASP) by as much as 20% from the previous quarter. An industry source added that LPDDR, which is facing severe supply bottlenecks across both the server and mobile markets, could also see price hikes exceeding 20%, although it remains unclear whether customers will accept the full increases.　　Samsung’s pricing push comes as the broader DRAM market remains exceptionally tight. According to TrendForce, supply conditions are expected to stay extremely constrained in the third quarter of 2026. However, weaker demand from consumer applications and the impact of a higher comparison base are expected to moderate contract price increases to 13–18% QoQ.　　Notably, the ZDNet report says Samsung’s DRAM ASP has risen faster than SK hynix’s. Industry observers attribute the stronger growth to Samsung’s larger share of commodity DRAM, where prices are more volatile, as well as its more aggressive pricing strategy.　　The report also notes that Samsung’s DRAM ASP increased by more than 90% quarter over quarter in the first quarter, with second-quarter growth estimated at 50% to 60%. The company is now targeting another increase of around 20% in the third quarter. By comparison, SK hynix, whose product mix has a higher proportion of HBM, is expected to see a smaller ASP increase.　　Long-Term Pricing Outlook　　The ZDNet report adds that DRAM prices are expected to remain relatively stable going forward. While the pace of price increases is likely to moderate, a growing share of shipments is being secured under long-term supply agreements (LTAs) with key customers.　　Micron disclosed during its earnings release late last month that it had signed 16 LTAs with customers, the report notes. Such agreements reflect customers’ expectations that memory supply will remain tight over the medium to long term. The expansion of LTAs with price floors, together with HBM price renegotiations, should help prevent a sharp downturn in the DRAM market next year, as ZDNet points out.　　The trend toward LTAs has also extended into the automotive sector. Reuters recently reported that Micron signed a long-term memory supply agreement with General Motors, highlighting how customers are increasingly locking in supply amid continued tight market conditions.
2026-07-06 13:04 reading：195
Samsung Reportedly Restarts 1.4nm Push, Targets 2029 Mass Production to Close Gap with TSMC, Intel
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Samsung Reportedly Restarts 1.4nm Push, Targets 2029 Mass Production to Close Gap with TSMC, Intel

　　As Intel and TSMC both target 1.4nm mass production around 2028-29, Samsung—after reportedly delaying its own roadmap—is now re-entering the race. According to The Bell, the company has resumed efforts to commercialize its 1.4nm (SF1.4) foundry process, with mass production now slated for 2029, placing it slightly behind its leading rivals.　　Samsung is also understood to have recently requested early development of process equipment from domestic and overseas partners. As noted by the report, it has recently shared its 1.4nm process roadmap with major semiconductor equipment makers, including Applied Materials and Lam Research.　　Notably, the report, citing industry sources, points out that Samsung Electronics has already installed ASML’s next-generation High-NA extreme ultraviolet (EUV) lithography equipment at its NRD-K facility. The High-NA EUV tools are understood to be applied to select layers starting from the 1.4nm process, the report explains.　　Why Samsung Delayed 1.4nm Plans　　The Bell adds that the original 2027 target has been pushed back to 2029, as Samsung redirects focus toward strengthening its 2nm (SF2) and derivative SF2P processes, signaling a shift toward yield stabilization and process optimization over aggressive node advancement.　　This strategic pivot is also reflected at the product level. A previous Global Economic News report suggested that Samsung has shifted the manufacturing process for its next-generation flagship smartphone processor, the Exynos 2800, from the originally planned 1.4nm node to an advanced version of its 2nm process.　　A Closer Look at 1.4nm Plans for Intel, TSMC　　Samsung Electronics’ renewed push into its 1.4nm process is drawing attention over whether it can narrow the technology gap with rivals such as TSMC and Intel. According to Economic Daily News, TSMC is targeting 1.4nm pilot production as early as 3Q27, with mass production planned for 2H28.　　However, Tom’s Hardware notes that TSMC is expected to skip ASML’s High-NA EUV tools through 2029, meaning its 1.4nm node would proceed without the advanced system being adopted by Intel and Samsung.　　For Intel, Reuters reports that its 18A-P process has already entered pilot production, with the company reportedly targeting 14A risk production in 2028, followed by high-volume manufacturing in 2029.
2026-07-01 11:39 reading：348
Samsung Unveils UFS 5.0 Storage, Claims Industry’s Fastest with 10.8GB/s Speeds
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Samsung Unveils UFS 5.0 Storage, Claims Industry’s Fastest with 10.8GB/s Speeds

　　While advancing its next-generation HBM development, Samsung is also pushing forward on the NAND front, unveiling what it claims is the industry’s first and fastest Universal Flash Storage (UFS) 5.0 solution. According to Samsung, the device delivers sequential read speeds of up to 10.8 GB/s and write speeds of up to 9.5 GB/s, more than doubling the performance of the previous UFS 4.1 standard.　　Building on this performance leap, Samsung said mass production is scheduled to begin in the fourth quarter of this year, with capacities of up to 1TB. As noted by Chosun Biz, the solution is based on JEDEC’s latest embedded storage standard, UFS 5.0, and is built on the company’s ninth-generation V-NAND technology.　　According to its press release, Samsung’s UFS 5.0 is designed to enable more seamless and efficient AI experiences on next-generation mobile devices, ranging from flagship smartphones to XR headsets and AI wearables. The improved performance is expected to reduce latency and accelerate response times when running large language models (LLMs) in on-device AI applications.　　UFS 5.0 Key Specs in Focus　　Generative AI is rapidly migrating from cloud environments to on-device deployment, driving a sharp increase in the volume of data required for local processing. As a result, storage is shifting from a passive data repository into a core infrastructure layer that directly supports AI computation.　　Against this backdrop, Samsung’s new storage solution delivers sequential read speeds of up to 10.8 GB/s and sequential write speeds of up to 9.5 GB/s, more than doubling the performance of the previous UFS 4.1 standard. On the other hand, the product’s power efficiency, according to the press release, has also been improved by over 40% compared with Samsung’s UFS 4.1 solution, driven by a range of architectural enhancements including clock gating and multi-voltage design technologies.　　The device also features a more compact design. According to Samsung, the UFS 5.0 solution comes in an ultra-compact package measuring just 7.5mm × 13mm × 0.9mm, making it 16.7% smaller than its predecessor. The reduced form factor enhances design flexibility and improves internal space efficiency across a wide range of applications, including smartphones, wearables, and extended reality (XR) devices.
2026-06-25 10:40 reading：387
Samsung, NVIDIA Deepen Ties as Talks Reportedly Expand to HBM5 Next Year and Next-Gen Groq Chips
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Samsung, NVIDIA Deepen Ties as Talks Reportedly Expand to HBM5 Next Year and Next-Gen Groq Chips

　　Following Jensen Huang’s high-profile meetings with SK hynix during his South Korea visit, Samsung Electronics Vice Chairman Jun Young-hyun met with the NVIDIA CEO on June 8 to discuss potential cooperation in HBM and foundry services. According to The Chosun Daily, Jun said the discussions focused on collaboration in HBM and foundry. He added that the near-term priority is to ensure stable supplies of HBM4 and SOCAMM this year, while the two companies also discussed longer-term collaboration beginning next year, including HBM4E, foundry services, and HBM5.　　Samsung, NVIDIA Expand Foundry Cooperation　　On the foundry front, Samsung Electronics is in discussions with NVIDIA on next-generation chip production using its advanced process technologies, including the Drive AGX Thor autonomous driving chip and the Groq language processing unit (LPU), according to Seoul Economic Daily.　　Jun said Samsung is manufacturing NVIDIA’s autonomous driving and Groq chips using 4nm and 8nm nodes, according to ZDNet. He added that the partnership also extends to next-generation Groq chips.　　As highlighted by Seoul Economic Daily, Samsung currently manufactures the third-generation Groq LPU (LP30) on its 4nm process. Jun’s remarks suggest the company is also in position to produce the next-generation LP40, despite industry expectations that TSMC could secure the order through its advanced packaging strengths.　　Samsung Details Memory Portfolio for NVIDIA　　On the memory front, Samsung Electronics is supplying HBM4 (6th-generation) memory with data transfer speeds exceeding 11.7 Gbps per pin for NVIDIA’s Vera Rubin platform, according to Yonhap News. The company is also providing LPDDR5X-based SOCAMM2 modules for the Vera CPU, as well as its PCIe Gen6-based PM1763 storage solution.　　Yonhap News adds that Samsung’s HBM4E combines DRAM core dies with a proprietary 4nm foundry base die, enabling operating speeds of 14 Gbps per pin and achieving up to 16 Gbps in testing.　　Meanwhile, Vice Chairman Jeon stopped short of confirming whether Samsung Electronics and NVIDIA would sign a long-term memory supply agreement, saying Samsung would do its utmost as a key partner to support NVIDIA’s success, according to Newspim.　　NVIDIA CEO Jensen Huang also discussed the company’s partnership with Samsung during a Q&A session following the NVIDIA Korea AI Ecosystem Reception. According to Dealsite, Huang said NVIDIA and Samsung have long collaborated in the Application-Specific Integrated Circuit (ASIC) sector and are jointly developing new ASIC products. He added that the two companies also share a long history of cooperation in memory technologies.
2026-06-10 10:37 reading：651
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