ROHM SiC Power <span style='color:red'>MOS</span>FETs
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ROHM SiC Power MOSFETs

　　SiC Power MOSFETs　　ROHM’s SiC MOSFETs feature low ON resistance and low switching loss　　ROHM’s silicon carbide (SiC) MOSFETs are available in a range of current ratings and packages. They come in a variety of ON resistances and voltage (VDSS) ratings of 650 V, 1,200 V, or 1,700 V. Unlike IGBTs there is no tail current during turn-off resulting in faster operation and reduced switching loss. Also, unlike silicon devices, the ON resistance remains relatively constant even at high temperatures, minimizing conduction losses. Both 2nd generation planar with maximum short-circuit withstand time and 3rd generation trench with reduced input capacitance and lower gate charge models are offered. Bare dies up to 1,700 V are also available.　　FeaturesFast switching with low lossMaximum junction temperature: +175°CPackaged devices rated at 650 V, 1,200 V, or 1,700 VON resistance from 17 mΩ to 1,150 mΩSpice model and thermal model available2nd gen planar technology with longer short-circuit withstand timeNo limitations on the use of the body diode3rd gen trench technology with low input capacitance (CISS) and low gate charge (QG)DC blocking voltage: 650 V, 1,200 V, 1,700 VMinimal switching lossesOperating temperature range: -40°C to +175°C　　ApplicationsInverters for induction heatingMotor drive invertersBidirectional convertersSolar invertersPower conditioners3rd Generation TO-247-4L Package with Kelvin Source Connection（NEW）ImageManufacturerPart NumberDescriptionAvailableQuantityView DetailsSCT3040KRC141200V NCH SIC TRENCH MOSFET IN 430View DetailsSCT3080KRC141200V NCH SIC TRENCH MOSFET IN 430View DetailsSCT3105KRC141200V NCH SIC TRENCH MOSFET IN 430View DetailsSCT3030ARC14650V NCH SIC TRENCH MOSFET IN 4P0View DetailsSCT3060ARC14650V NCH SIC TRENCH MOSFET IN 4P30View DetailsSCT3080ARC14650V NCH SIC TRENCH MOSFET IN 4P0View DetailsSiC Power MOSFETs SingleImageManufacturerPart NumberDescriptionAvailableQuantityView DetailsSCT2080KECUMOSFET N-CH 1200V 40A TO-24720View DetailsSCT2120AFCUMOSFET N-CH 650V 29A TO-220AB10View DetailsSCT2280KECUMOSFET N-CH 1200V 14A TO-24722View DetailsSCT2450KECUMOSFET N-CH 1200V 10A TO-24717View DetailsSCT2H12NZGC11MOSFET N-CH 1700V 3.7A TO-3PFM55View DetailsSiC Power MOSFETs ArraysImageManufacturerPart NumberDescriptionAvailablQuantityView DetailsBSM080D12P2C008MOSFET 2N-CH 1200V 80A MODULE4View DetailsBSM120D12P2C005MOSFET 2N-CH 1200V 120A MODULE8View DetailsBSM300D12P2E001MOSFET 2N-CH 1200V 300A MODULE22View DetailsBSM180D12P2C101MOSFET 2N-CH 1200V 180A MODULE10View Details
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Release time：2019-09-17 00:00 reading：9891 Continue reading>>
New C<span style='color:red'>MOS</span> Op-Amp Delivers Leading-Class* Low Noise
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New CMOS Op-Amp Delivers Leading-Class* Low Noise

　　ROHM authorized online sales platform　　Ameya360 Components Supply Platform：www.ameya360.com　　If interested kindly click here for more details:　　http://www.ameya360.com/product/6873651　　ROHM has recently announced the availability of a CMOS op-amp featuring the lowest noise in the industry optimized for industrial applications requiring high-accuracy sensing, such as accelerometers used in sonar systems, and optical sensors that handle ultra-small signals.　　　　In recent years, in addition to IoT devices, sensors are being adopted in a variety of applications from portables and vehicle systems to industrial equipment, to improve functionality and provide advanced control. Used to detect and convert various environmental and physical changes into signals, sensors demand high accuracy, but at the same time peripheral sensor circuitry is trending towards lower voltages to achieve greater power savings.　　Op-amps are configured at the rear stage to amplify the analog sensor output, but because sensor signals are so weak it is necessary to implement noise countermeasures to ensure high-accuracy transmission. In response, ROHM developed a high noise tolerant op-amp for the automotive market utilizing a vertically integrated production system that leverages original analog design technologies and processes. ROHM has introduced an op-amp that delivers the industry’s best performance against external noise optimized for consumer devices and industrial equipment.　　The LMR1802G-LB, developed utilizing ROHM’s market-leading analog technology covering circuit design, processes, and layout, reduces input equivalent noise voltage density by half (2.9nV/√Hz at 1kHz, 7.8nV/√Hz at 10Hz) compared to conventional products, significantly improving the detection performance of sensor signals. In addition, best-in-class phase margin (68°) and capacitive load tolerance (500pF) provide excellent stability (difficult to oscillate, easy to handle). This enables accurate amplification of voltages in the order of ?V, ensuring support for industrial and consumer applications requiring high-precision sensing.　　　　Key Features　　1．Easy to use despite low noise results in the industry’s best performing CMOS op-amps　　　　This latest product combines ROHM’s superior analog technology covering circuit design (new circuit at the differential input stage), layout (analog design cultivated over many years), and processes (optimized for low noise) to achieve ultra-low-noise. The input equivalent noise voltage density of 2.0nV/√Hz at 1kHz and 7.8nV/√Hz at 10Hz are approximately half that of products on the market, ensuring superior low-noise performance.　　In addition, in the past when pursuing lower noise in op-amps there were problems such as poor phase margin and capacitive load characteristics, as well as oscillation that made circuit design difficult, but introducing a new circuit at the differential input stage allowed ROHM to achieve industry-low noise along with a class-leading phase margin of 68° and capacitive load tolerance of 500pF.　　This doubles the detection capability of sensor signals over conventional solutions, enabling accurate amplification of voltages on the order of ?V, improving performance with sensors that demand higher precision.　　2. Minimizes input offset voltage and input bias current　　　　In terms of op-amp configuration, the output voltage should be 0V when the input is 0V, but an offset voltage is often generated as an error. Also, if the sensor’s output impedance is high the sensor output voltage will be affected if the input bias current of the op-amp is large. Consequently, these two error factors must be made as small as possible to ensure optimal performance.　　The LMR1802G-LB offers an input offset voltage of 450?V and input bias current of only 0.5pA (4x and 2x less than conventional products, respectively), providing high accuracy amplification.　　Pricing:TBD　　Availability: June 2018 (Samples), October 2018 (OEM quantities)　　Application Examples　　Distance measuring equipment utilizing sonar and optical sensors　　Security systems, IR remote controls, night vision, and other sets equipped with IR sensors　　Devices demanding high accuracy operation (i.e. HDD)　　Equipment management systems including flow meters and gas detectors　　Other industrial and consumer sets integrating sensors requiring high accuracy detection　　Specifications　　　　Terminology　　CMOS (Complementary Metal Oxide Semiconductor)Typically features smaller input current vs bipolar types, making it suitable for low-voltage operation.
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Release time：2018-08-18 00:00 reading：16524 Continue reading>>

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