ROHM Launches an Ultra-Compact Wireless <span style='color:red'>Power</span> Chipset for Wearables
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ROHM Launches an Ultra-Compact Wireless Power Chipset for Wearables

　　ROHM has developed a wireless power supply IC chipset consisting of the receiver - ML7670 - and transmitter - ML7671 - compatible with Near Field Communication (NFC) technology for compact wearables such as smart rings and smart bands as well as peripheral devices like smart pens.　　The smart ring market has seen rapid growth in recent years, primarily in healthcare and fitness applications. However, for extremely small ring-shaped devices worn on the finger, wired charging is impractical, while conventional Qi wireless charging standard is difficult to implement due to constraints such as coil size. This has driven increased demand for a proximity-based power transfer method capable of reliably charging ultra-compact devices.　　In response, NFC-based charging, which operates at the high-frequency 13.56MHz band that enables antenna miniaturization, is attracting increased attention, with adoption accelerating in next-generation wearables. Following the successful commercialization of the 1W ML7660/ML7661, ROHM has developed the ML7670/ML7671 chipset optimized for even smaller devices.　　This new chipset builds on the proven receiver - ML7660 - and transmitter - ML7661. The maximum power transfer is specified at 250mW, while peripheral components such as the switching MOSFETs required to supply power to the charging IC are built in. The result is a solution optimized for both mounting area and power transfer efficiency in the power class demanded by compact wearable devices, especially smart rings.　　The ML7670 power receiver IC achieves a maximum power transfer efficiency of 45% in the 250mW low output range – all in an industry-leading form factor of just 2.28 × 2.56 × 0.48mm. A key feature of the new chipset is superior performance that surpasses the efficiency of comparable products in the same class by optimizing elements such as coil matching, rectifier circuitry, and reduced losses in switching devices.　　What's more, all firmware required for wireless power delivery is embedded directly within the IC, eliminating the need for a host MCU. This significantly reduces board space along with development workload in device design.　　Compliance with NFC Forum (WLC 2.0) enables power transfer while maintaining compatibility with existing devices, positioning the chipset as a core element in the expanding NFC wireless power ecosystem.　　The new chipset is already in mass production. Furthermore, it has been adopted in SOXAI RING 2, the latest model launched on December 10th, 2025, by SOXAI, Inc. (“SOXAI” is pronounced “SOK-sai”.), the Japanese developer and distributor of the original sleep monitoring ring SOXAI RING. Evaluation boards and reference designs are also offered to facilitate integration. For more information, please contact a sales representative or submit an inquiry via the contact page on ROHM’s website.　　Going forward, ROHM will continue to promote device development that leverages miniaturization and low-power consumption technologies essential for wearable devices, contributing to improved user convenience and the continued growth of the wearable market.　　Specifications　　Case Study: SOXAI RING 2 Adoption Example SOXAI RING is the only smart ring for sleep management developed in Japan capable of accurately capturing and analyzing sleep data. It incorporates cutting-edge technologies such as an optical vital sensor, temperature sensor, accelerometer, Bluetooth® Low Energy communication, and NFC wireless charging functionality.　　The latest model, SOXAI RING 2, is equipped with Deep Sensing™, a proprietary photoplethysmography (PPG) sensor that significantly improves measurement accuracy, enabling the visualization of physical health changes with far greater depth and precision.　　Bluetooth® is a registered trademark of Bluetooth SIG, Inc. in the US.　　Deep Sensing™ is a trademark or registered trademark of SOXAI, Inc.
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Release time：2026-04-29 10:03 reading：268 Continue reading>>
ROHM has Introduced Reference Designs for Three-Phase Inverters Featuring New SiC <span style='color:red'>Power</span> Modules
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ROHM has Introduced Reference Designs for Three-Phase Inverters Featuring New SiC Power Modules

　　ROHM has released reference designs "REF68005", "REF68006", and "REF68004" for three-phase inverter circuits featuring EcoSiC™ brand SiC molded modules "HSDIP20", "DOT-247", and "TRCDRIVE pack™" on ROHM’s website. Designers can use the data provided in these reference designs to create the drive circuit boards. When combined with ROHM's SiC modules, these designs help reduce the person-hours required for device evaluation.　　In high power conversion circuits, while SiC power devices contribute to higher efficiency and reliability, they can increase the workload associated with peripheral circuit and thermal design. The reference designs released by ROHM support output power levels up to the 300kW class, facilitating the adoption of SiC modules across a wide range of automotive and industrial applications.　　Three types of SiC modules compatible with these reference designs are already available for purchase through online distributors such as DigiKey and Farnell.　　About Reference Designs　　These reference designs are intended for users to utilize the publicly released design data. If you would like to obtain a reference design board or evaluation kit, please contact a sales representative or visit the contact page on ROHM’s website. (Quantities are limited.)　　Regarding Online Sales of SiC ModulesDetails of SiC modules currently available through online distributors can be found below.　　New SiC Molded Modules Now Available for Online Purchase!　　Simulation SupportWe also provide various support resources to facilitate quick evaluation and implementation of our products. ROHM’s comprehensive solutions, including simulation and thermal design support, can provide valuable assistance in component selection.　　Various design data related to the evaluation boards can be downloaded from their respective reference design page, while the product information for SiC modules compatible with the reference designs can be accessed from each product page as well.　　Additionally, the ROHM Solution Simulator, a simulation tool enabling system-level verification from the component selection stage, is available on ROHM’s website.　　HSDIP20: Reference Design / ROHM Solution Simulator / LTspice® Circuit ModelDOT-247: Reference Design / ROHM Solution Simulator / LTspice® Circuit ModelTRCDRIVE pack™: Reference Design　　Other Reference DesignsIn addition to those introduced in this release, we offer numerous reference designs that contribute to reduced design effort for users. More details are available through the link below.　　Reference Design / Application Evaluation Kit　　Related InformationNews Release (HSDIP20)　　ROHM Develops New High Power Density SiC Power ModulesNews Release (DOT-247)　　ROHM Launches 2-in-1 SiC Molded Module “DOT-247”News Release (TRCDRIVE pack™)　　ROHM’s New TRCDRIVE pack™ with 2-in-1 SiC Molded Module: Significantly Reduces the Size of xEV Inverters　　EcoSiC™ BrandEcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.・TRCDRIVE pack™ and EcoSiC™ are trademarks or registered trademarks of ROHM Co., Ltd.・LTspice® is a registered trademark of Analog Devices, Inc.When using third-party trademarks, please adhere to the usage guidelines specified by the rights holder.
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Release time：2026-03-18 11:35 reading：520 Continue reading>>
Industry’s Highest* Rated <span style='color:red'>Power</span>! ROHM Unveils the UCR10C Series of Sintered Metal Shunt Resistors
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Industry’s Highest* Rated Power! ROHM Unveils the UCR10C Series of Sintered Metal Shunt Resistors

　　ROHM has developed the “UCR10C Series”, which has the industry's highest rated power for 2012-size shunt resistors (10 mΩ to 100 mΩ).　　Shunt resistors are required to handle higher power for current sensing in both the automotive and industrial equipment markets. Additionally, specific requirements for high junction reliability in these markets has increased annually.　　ROHM’s new products form a copper-based resistive element on an alumina substrate via sintering. By optimizing the heat dissipation structure, it achieves rated powers of 1.0W and 1.25W-double that of equivalent-sized products including thick film types and metal plate types. This enables the replacement of products with wide terminal types or larger alternatives, facilitating miniaturization and reducing the number of components required.　　Furthermore, the use of a metal resistive element achieves a low TCR (0 to +60 ppm/°C). This minimizes errors due to temperature changes, enabling high-precision current sensing. Moreover, it achieves the same level of durability as the metal plate types in temperature cycle testing (-55°C / +155°C, 1000 cycles). This ensures high bonding reliability even in applications with extreme temperature fluctuations, such as automotive use, enabling stable, long-term operation.　　This series is fully lead-free. No lead materials are present, even in RoHS-exempted areas, thus reducing environmental impact.　　As part of its future expansion plans, ROHM has also commenced development of the 3216-size (2W) sintered metal shunt resistor, the “UCR18C Series”, further enhancing its product line-up that combines high power, high precision and high reliability.　　Application Examples　　Various current detection applications in automotive, industrial equipment, and consumer electronics.　　Terminology　　Thick Film Types　　A chip resistor using a material called metal glaze as the resistive element. In addition to cost advantages, the thick film resistive element provides superior resistance to pulses and surges.　　Metal Plate Types　　A chip resistor using a metal plate as the resistive element. It offers superior thermal dissipation and achieves high precision through low TCR, providing performance advantages.　　Wide Terminal Types　　A structure where the electrodes are positioned along the long side of the chip resistor body. Compared to the common structure with electrodes along the short side, it improves heat dissipation efficiency and enables high-power handling.　　TCR (Temperature Coefficient of Resistance)　　An indicator showing how much a resistor's resistance value changes with temperature. A lower value means less resistance variation due to temperature fluctuations, providing more stable performance.　　The TCR of the UCR10C varies depending on the resistance value. Furthermore, the listed TCR is the guaranteed value for the +25/+155°C range for the 10mΩ product.
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Release time：2026-01-22 11:30 reading：1526 Continue reading>>
TAIYO丨Multilayer Metal <span style='color:red'>Power</span> Inductor Rated at 165°C for Automobiles 1608 Size Added to the Lineup
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TAIYO丨Multilayer Metal Power Inductor Rated at 165°C for Automobiles 1608 Size Added to the Lineup

　　TAIYO YUDEN CO., LTD. has commercialized 14 items, including the multilayer metal power inductor MCOIL™ "LACNF1608KKT1R0MAB" (1.6 x 0.8 x 1.0 mm, maximum height shown), which complies with the "AEC-Q200" certification reliability test standard for passive automotive components.　　The new product is approximately 49% smaller than our previous product, the "LACNF2012KKT1R0MAB" (2.0 x 1.25 x 1.0 mm), and can contribute to the miniaturization and higher performance of power supply circuits installed in automobiles.　　These products are used as choke coils in DC-DC converters used in automotive engine control systems such as ECUs, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters.　　Mass production of this products began at our subsidiary, WAKAYAMA TAIYO YUDEN CO., LTD. (Inami-cho, Hidaka-gun, Wakayama Prefecture), in December 2025. Samples are available for 50 yen per unit.　　Background　　The advancements that we have seen in recent years in electronic controls in production vehicles, as typified by ADAS units, has led to a greater number of power supply circuits on vehicles, which in turn has led to growth in the demand for power inductors that are used in these circuits. Furthermore, performance also continues to improve through functional integration, such as in integrated cockpits that combine instrument clusters and infotainment devices. While the throughput of IC chips continues to grow as these devices become increasingly multifunctional and high-performance, there is also a growing need to make on-board electronic components smaller in order to arrange devices in highly dense configurations and integrate them into single modules. Furthermore, since ECUs are increasingly being installed in engine compartments--a high temperature environment--on-board electronic components must be able to withstand high temperatures.　　In response, TAIYO YUDEN has added a new 1608 size to its MCOIL™ LACN series of multilayer metal power inductors, which boast the advantages of being smaller and thinner, and having an operating temperature range of -55°C to +165°C. Our proprietary metal materials are bonded to each other by an oxide film using heat treatment, ensuring insulation and providing high heat resistance and thermal conductivity. Thanks to these features, the product exhibits stable characteristics, is able to withstand high temperatures, and achieves high reliability, even in devices used in harsh temperature environments such as automotive applications.　　TAIYO YUDEN focuses on the development of products that meet market needs, and will continue to expand its power inductor product lineup.　　■Application　　Choke coils in DC-DC converters used in automotive engine control systems such as ECUs, safety systems such as ABS, body-related systems such as ADAS, and information systems such as instrument clusters　　* Derating of rated current is necessary depending on the ambient temperature.　　Please see our website below for detailed specifications.　　LACN series　　https://ds.yuden.co.jp/TYCOMPAS/ut/specificationSearcher?cid=L&u=M&Seri=LACN_A&SR2=LM%2CMP　　LCCN series　　https://ds.yuden.co.jp/TYCOMPAS/ut/specificationSearcher?SR6-L=AP2&Ind=1000.0%3A1500.0&Current_Srch=%3A1.9&pg=1&pn=L*CNF&cid=L&u=M　　* "MCOIL" is a registered trademark or a trademark of TAIYO YUDEN CO., LTD. in Japan and other countries.　　* The names of series noted in the text are excerpted from part numbers that indicate the types and characteristics of the products, and therefore are neither product names nor trademarks.
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Release time：2026-01-08 15:22 reading：906 Continue reading>>
GigaDevice Launches GD25NX Series xSPI NOR Flash with Dual-Voltage Design Optimized for high-speed, low-power 1.2 V SoC applications
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GigaDevice Launches GD25NX Series xSPI NOR Flash with Dual-Voltage Design Optimized for high-speed, low-power 1.2 V SoC applications

　　GigaDevice, a leading semiconductor company specializing in Flash memory, 32-bit microcontrollers (MCUs), sensors, and analog products, today announced the launch of its new generation of high-performance dual-voltage xSPI NOR Flash products – the GD25NX series. Featuring a 1.8 V core and 1.2 V I/O design, the GD25NX series connects directly to 1.2 V system on chips (SoCs) without an external booster circuit, significantly reducing system power consumption and BOM cost.　　Building on the success of the 1.2 V I/O GD25NF and GD25NE series, the new GD25NX further extends GigaDevice's expertise in dual-voltage Flash design. With high-speed data transfer performance and outstanding reliability, the GD25NX series is ideal for demanding applications such as wearables, data centers, edge AI, and automotive electronics that require exceptional stability, responsiveness, and power efficiency.　　The GD25NX xSPI NOR Flash supports an octal SPI interface with a maximum clock frequency of 200 MHz in both single transfer rate (STR) and double transfer rate (DTR) modes, delivering data throughput of up to 400 MB/s. It achieves a typical page program time of 0.12 ms and a sector erase time of 27 ms, offering 30% faster programming speed and 10% shorter erase time compared with conventional 1.8 V octal Flash products.　　To safeguard data reliability, the GD25NX series integrates error correction code (ECC) algorithms and cyclic redundancy check (CRC) verification to enhance data integrity and extend product lifespan. In addition, the series supports a data strobe (DQS) functionality to ensure signal integrity in high-speed system designs, meeting the stringent data transfer stability requirements of SoCs use on data center and automotive applications.　　Built on an innovative 1.2 V I/O architecture, the GD25NX series delivers outstanding performance while maintaining exceptional power efficiency. At a frequency of 200 MHz, the device achieves read currents as low as 16 mA in Octal I/O STR mode and 24 mA in Octal I/O DTR mode. Compared with the conventional 1.8 V Octal I/O SPI NOR Flash devices, the 1.2 V I/O design reduces read power consumption by up to 50%, significantly improving system energy efficiency while sustaining high-speed operation—an ideal choice for power-sensitive applications.　　"The GD25NX series sets a new benchmark for combining low voltage with high performance in SPI NOR Flash," stated by Ruwei Su, GigaDevice Vice President and General Manager of Flash BU. "Its design aligns closely with mainstream SoC requirements for low-voltage interfaces, enabling higher integration and lower BOM costs for customers. Moving forward, GigaDevice will continue to expand its dual-voltage portfolio with broader density and package options to help customers build the next generation of efficient and reliable low-power storage solutions."　　The GD25NX series is available in 64 Mb and 128 Mb densities, meeting diverse storage needs across various applications. These devices are supported on TFBGA24 8×6 mm (5×5 ball array) and WLCSP (4×6 ball array) packages. Samples of the 128 Mb GD25NX128J are now available for customer evaluation, while the 64 Mb GD25NX64J samples are currently being prepared. For detailed technical information or pricing inquiries, please contact your local authorized GigaDevice sales representative.
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Release time：2025-12-15 15:57 reading：1652 Continue reading>>
ROHM launches SiC MOSFETs in TOLL package that achieves both miniaturization and high-power capability
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ROHM launches SiC MOSFETs in TOLL package that achieves both miniaturization and high-power capability

　　ROHM has begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these new packages offer approximately 39% improved thermal performance. This enables high-power handling despite their compact size and low profile. It is ideal for industrial equipment such as server power supplies and ESS (Energy Storage Systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design.　　In applications like AI servers and compact PV inverters, the trend toward higher power ratings is occurring simultaneously with the contradictory demand for miniaturization, requiring power MOSFETs to achieve higher power density. Particularly in totem pole PFC circuits for slim power supplies, often called “the pizza box type,” stringent requirements demand thicknesses of 4mm or less for discrete semiconductors.　　ROHM's new product addresses these needs by reducing component footprint by approximately 26% and achieving a low profile of 2.3mm thickness – roughly half that of conventional packaged products. Furthermore, while most standard TOLL package products are limited by a drain-source rated voltage of 650V, ROHM's new products support up to 750V. This allows for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses.　　The lineup consists of six models with on-resistance ranging from 13mΩ to 65mΩ, with mass production started in September 2025 (sample price: $37.0/unit, tax excluded). 　　Product Lineup　　Application Examples　　・Industrial equipment: Power supplies for AI servers and data centers, PV inverters, ESS (energy storage systems)　　・Consumer equipment: General power supplies　　EcoSiC™ Brand　　EcoSiC™ is a brand of devices that utilize silicon carbide (SiC), which is attracting attention in the power device field for performance that surpasses silicon (Si). ROHM independently develops technologies essential for the evolution of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.• EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.　　Terminology　　Totem Pole PFC Circuit　　A highly efficient power factor correction circuit configuration that reduces diode losses by using MOSFETs as rectifier elements. The adoption of SiC MOSFETs enables high voltage withstand capability, high efficiency, and high-temperature operation for the power supply.
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Release time：2025-12-04 17:10 reading：1325 Continue reading>>
Panasonic Industry Commercializes Conductive Polymer Tantalum Solid Capacitors (POSCAP) with The Industry's Lowest Profile*1 to Support High-Output <span style='color:red'>Power</span> Delivery Required for USB Type-C Connections
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Panasonic Industry Commercializes Conductive Polymer Tantalum Solid Capacitors (POSCAP) with The Industry's Lowest Profile*1 to Support High-Output Power Delivery Required for USB Type-C Connections

　　Panasonic Industry Co., Ltd., a Panasonic Group company, announced  that it will begin commercial production of its two models of Conductive Polymer Tantalum Solid Capacitors (POSCAP), 50TQT33M and 63TQT22M. These capacitors are incorporated into power circuits used for information and communication equipment, including laptops and tablets. They offer an ultra-high withstand voltage and high capacitance in a body with the industry’s lowest profile of 3 mm, supporting high-output power delivery through USB Type-C connectors. Mass production for these models is planned to start in December 2025.　　These capacitors are ideal for voltage stabilization and noise reduction in power supplies compliant with USB Power Delivery (USB-PD)[1] 3.1. While previous USB-C connectors supplied up to 100 W (20 V/5 A), USB-PD 3.1 expands this to 240 W (48 V/5 A). This enables widespread use of USB-C connectors for high-speed data transfer and rapid charging, and is expected to further expand applications to larger equipment requiring high power output, such as displays.　　On the other hand, information and communication equipment such as laptops are increasingly required to be thinner and more compact. Capacitors therefore must combine an ultra-high withstand voltage, high capacitance, and a low profile in order to fit into limited space. Panasonic Industry began mass production of Conductive Polymer Tantalum Solid Capacitors (POSCAP) in 1997 and, as an industry leader, has continuously delivered first-of-their-kind products. Leveraging proprietary powder molding technology and film formation technologies, the company has newly developed two models that achieve both an ultra-high withstand voltage and high capacitance in a package with the industry's lowest profile of 3 mm.　　Through these unique device technologies, Panasonic Industry will continue to contribute to enhancing the functionality of electronic equipment, including laptops, while also reducing the environmental impact through smaller, lighter devices and lower material usage.　　Key features:　　1. Achieves both an ultra-high withstand voltage and high capacitance*2 to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry*1—enabled by proprietary powder molding and film formation technologies　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　*1 As of September 18, 2025, Conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V and capacitance of 22 μF or higher (Panasonic Industry data)　　*2 USB-Power Delivery 3.1 (180 W/240 W output) compliant high-capacitance conductive polymer tantalum solid capacitors with rated voltages of 50 V and 63 V, and a capacitance of 22 μF or higherDetailed features:　　1. Achieves both an ultra-high withstand voltage and high capacitance to support high-output USB Type-C power delivery, in a 3 mm profile—the lowest in the industry—enabled by proprietary powder molding and film formation technologies　　To achieve capacitor performance required for USB-PD 3.1 power supplies in a low-profile body, both high capacitance and a high withstand voltage must be ensured, despite their trade-off relationship. High-capacitance tantalum powder is necessary for electrode materials, but its fine particle size makes molding difficult, creating challenges for stable production. Forming a uniform dielectric film on the surface of the electrodes is important for enhancing the withstand voltage. However, since electrodes made with high-capacitance tantalum powder contain extremely small internal pores, dielectric oxide films tend to develop imperfections.　　Panasonic Industry overcame these challenges by establishing proprietary technology to mold high-capacitance tantalum powder with uniform density, and by optimizing the film deposition process to create flawless dielectric films. This enabled the development of two new models that combine an ultra-high withstand voltage and high capacitance, meeting the USB-C high-output power delivery requirements in a 3 mm low-profile package.Cross-sectional view of POSCAP and enlarged view of the inside of the electrode body　　2. Lineup of USB-PD 3.1-compliant models rated at 50 V and 63 V　　Until now, Panasonic Industry’s POSCAP lineup extended only up to 35 V, with no models compatible with USB-PD 3.1, which extends the rated voltage specification to 36 V (180 W) and 48 V (240 W). The two new models, rated at 50 V and 63 V, each achieve a high capacitance of 22 μF or higher in a package with the industry's lowest profile of 3 mm. The full lineup provides flexibility to meet diverse applications and equipment specifications.　　3. Contributes to reduced material usage lower environmental impact through low-profile design　　Compared to the industry standard size*3, the new models reduce volume by 25%, contributing to a lower environmental impact through reduced material usage.　　*3 Comparison with the industry standard size (7.3 mm × 4.3 mm × 4 mm) of conductive polymer tantalum solid capacitors used in USB-PD 3.1 compliant power suppliesApplications:　　Voltage stabilization and noise reduction of USB-PD 3.1-compliant power supplies for laptops, displays, and peripheral equipment　　Arc discharge[2] countermeasures for USB-PD 3.1-compliant connectors　　Specifications:　　Life: 2,000 hours at 105°C; guaranteed operating temperature range: -55°C to 105°C　　Ripple current[3]: 100 kHz, 105°C　　ESR[4]: 100 kHz, 20°C　　*4 Product dimensional tolerance:　　Length (L): ±0.3 mm; Width (W): ±0.2 mm; Height (H): ±0.2 mmTerm descriptions:　　[1] USB-PD　　The power delivery standards established by the standard-setting organization USB Implementers Forum, Inc. (USB-IF). With the launch of USB-PD 3.1 in 2021, USB Type-C cables and connectors can now deliver up to 240 W of power, supporting a wide range of applications—from smartphones and laptops to larger equipment such as monitors.　　[2] Arc discharge　　An electric spark or discharge phenomenon that occurs when a high current flows at low voltage in electrical circuits.　　[3] Ripple current　　When a voltage fluctuation is applied to a capacitor, a corresponding charging or discharging current flows through the capacitor. The current applied to this capacitor is referred to as a ripple current. The higher the ripple current, the higher the allowable current.　　[4] ESR (Equivalent Series Resistance)　　Represents the value of an internal resistance component that can cause heat generation. Capacitors with lower ESR allow higher ripple currents and provide excellent noise absorption.
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Release time：2025-11-06 15:35 reading：1339 Continue reading>>
ROHM Publishes White Paper on <span style='color:red'>Power</span> Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale AI Infrastructure
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ROHM Publishes White Paper on Power Solutions for Next-Generation 800 VDC Architecture Aligned with the Industry's 800 VDC Roadmap to Enable Gigawatt-Scale AI Infrastructure

　　ROHM has released a new white paper detailing advanced power solutions for AI data centers based on the novel 800 VDC architecture, reinforcing its role as a key semiconductor industry player in driving system innovation.　　As part of the collaboration announced in June 2025, the white paper outlines optimal power strategies that support large-scale 800 VDC power distribution across AI infrastructure.　　The 800 VDC architecture represents a highly efficient, scalable power delivery system poised to transform data center design by enabling gigawatt-scale AI factories. ROHM offers a broad portfolio of power devices, including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), and is among the few companies globally with the technological expertise to develop analog ICs (control and power ICs) capable of maximizing device performance.　　Included in the white paper are ROHM’s comprehensive power solutions spanning a wide range of power devices and analog IC technologies, supported by thermal design simulations, board-level design strategies, and real-world implementation examples.　　[Access the white paper here]　　Key Highlights of the White Paper• Rising Rack Power Consumption: Power demand per rack in AI data centers is rapidly increasing, pushing conventional 48V/12V DC power supply systems to their limits.　　• Shift to 800 VDC: Transitioning to an 800 VDC architecture significantly enhances data center efficiency, power density, and sustainability.　　• Redefined Power Conversion: In the 800 VDC system, AC-DC conversion (PSU), traditionally performed within server racks, is relocated to a dedicated power rack.　　• Essential Role of SiC and GaN: Wide bandgap devices are critical for achieving efficient performance. With AC-DC conversion moved outside the IT rack, higher-density configurations inside the IT rack can better support GPU integration.　　• Optimized Conversion Topologies: Each conversion stage—from AC to 800 VDC in the power rack and from 800 VDC to lower voltages in the IT rack—requires specialized solutions. ROHM’s SiC and GaN devices contribute to higher efficiency and reduced noise while decreasing the size of peripheral components, significantly increasing power density.　　• Breakthrough Device Technologies: ROHM’s EcoSiC™ series offers industry-leading low on-resistance and top-side cooling modules ideal for AI servers, while the EcoGaN™ series combines GaN performance with proprietary analog IC technologies, including Nano Pulse Control™.　This allows for stable gate drive, ultra-fast control, and high-frequency operation–features that have earned strong market recognition.　　The shift to 800 VDC infrastructure is a collective industry effort. ROHM is working closely with NVIDIA, data center operators, and power system designers to deliver essential wide bandgap semiconductor technologies for next-generation AI infrastructure. Through strategic collaborations, including a 2022 partnership with Delta Electronics, ROHM continues to drive innovation in SiC and GaN power devices, enabling powerful, sustainable, and energy-efficient data center solutions.　　ROHM’s EcoSiC™　　EcoSiC™ is ROHM’s brand of devices that utilize silicon carbide, which is attracting attention in the power device field for performance that surpasses silicon. ROHM independently develops technologies essential for the advancement of SiC, from wafer fabrication and production processes to packaging, and quality control methods. At the same time, we have established an integrated production system throughout the manufacturing process, solidifying our position as a leading SiC supplier.　　・EcoSiC™ is a trademark or registered trademark of ROHM Co., Ltd.
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Release time：2025-10-15 11:50 reading：1112 Continue reading>>
Renesas <span style='color:red'>Power</span>s 800 Volt Direct Current AI Data Center Architecture with Next-Generation <span style='color:red'>Power</span> Semiconductors
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Renesas Powers 800 Volt Direct Current AI Data Center Architecture with Next-Generation Power Semiconductors

　　Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, announced that it is supporting efficient power conversion and distribution for the 800 Volt Direct Current power architecture announced by NVIDIA, helping fuel the next wave of smarter, faster AI infrastructure.　　As GPU-driven AI workloads intensify and data center power consumption scales into multi-hundred megawatt territory, modern data centers must adopt power architectures that are both energy optimized and scalable. Wide bandgap semiconductors such as GaN FET switches are quickly emerging as a key solution thanks to their faster switching, lower energy losses, and superior thermal management. Moreover, GaN power devices will enable the development of 800V direct current buses within racks to significantly reduce distribution losses and the need for large bus bars, while still supporting reuse of 48V components via DC/DC step-down converters.　　Renesas’ GaN based power solutions are especially suited for the task, supporting efficient and dense DC/DC power conversion with operating voltages of 48V to as high as 400V, with the option to stack up to 800V. Based on the LLC Direct Current Transformer (LLC DCX) topology, these converters achieve up to 98 percent efficiency. For the AC/DC front-end, Renesas uses bi-directional GaN switches to simplify rectifier designs and increase power density. Renesas REXFET MOSFETs, drivers and controllers complement the BOM of the new DC/DC converters. 　　“AI is transforming industries at an unprecedented pace, and the power infrastructure must evolve just as quickly to meet the explosive power demands,” said Zaher Baidas, Senior Vice President and General Manager of Power at Renesas. “Renesas is helping power the future of AI with high-density energy solutions built for scale, supported by our full portfolio of GaN FETs, MOSFETs, controllers and drivers. These innovations will deliver performance and efficiency, with the scalability required for future growth.”　　Renesas Power Management Leadership　　A world leader in power management ICs, Renesas ships more than 1.5 billion units per year, with increased shipments serving the computing industry, and the remainder supporting industrial and Internet of Things applications as well as data center and communications infrastructure. Renesas has the broadest portfolio of power management devices, delivering unmatched quality and efficiency with exceptional battery life. As a trusted supplier, Renesas has decades of experience designing power management ICs, backed by a dual-source production model, the industry’s most advanced process technology, and a vast network of more than 250 ecosystem partners.　　About Renesas Electronics Corporation　　Renesas Electronics Corporation (TSE: 6723) empowers a safer, smarter and more sustainable future where technology helps make our lives easier. A leading global provider of microcontrollers, Renesas combines our expertise in embedded processing, analog, power and connectivity to deliver complete semiconductor solutions. These Winning Combinations accelerate time to market for automotive, industrial, infrastructure and IoT applications, enabling billions of connected, intelligent devices that enhance the way people work and live. 
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Release time：2025-10-13 13:29 reading：1528 Continue reading>>
Driving Innovation Together: NOVOSENSE, UAES and Innoscience Join Forces to Reshape <span style='color:red'>Power</span> Electronics for New Energy Vehicles
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Driving Innovation Together: NOVOSENSE, UAES and Innoscience Join Forces to Reshape Power Electronics for New Energy Vehicles

　　September 29, 2025 – NOVOSENSE Microelectronics, United Automotive Electronic Systems (UAES) and Innoscience have signed a strategic cooperation agreement to jointly advance power electronics for new energy vehicles (NEVs). The three parties will collaborate on the development of next-generation intelligent integrated Gallium Nitride (GaN) products. Building on their combined expertise, the new devices will deliver more reliable GaN driving and protection features, enabling higher power density and paving the way for commercial adoption across the automotive industry.Signing Ceremony　　GaN as a Key Driver for NEV Innovation　　With its superior material properties, GaN is emerging as a transformative technology in automotive power electronics. Compared to traditional silicon devices, GaN significantly improves system efficiency and power density, allowing for more compact and lighter designs—addressing the core requirements of vehicle electrification and lightweighting.　　Complementary Strengths, Shared Goals　　Through joint R&D and application validation, NOVOSENSE, UAES and Innoscience aim to tackle critical challenges such as efficiency, reliability and cost. Together, the three parties will deliver solutions that combine high performance with competitive economics. NOVOSENSE brings extensive expertise in high-performance analog and mixed-signal IC design. UAES contributes deep knowledge in system integration and automotive applications. Innoscience adds world-leading competence in GaN device technology. This cross-disciplinary collaboration establishes a platform for innovation across the entire value chain, accelerating GaN adoption in next-generation automotive systems.　　Dr. Xiaolu Guo, Deputy General Manager of UAES, said:“UAES has been at the forefront of automotive electronics for decades, consistently responding to industry needs through innovation. GaN technology is a vital enabler for vehicle electrification. Partnering with NOVOSENSE and Innoscience allows us to integrate capabilities from device to system level, driving GaN industrialization and delivering efficient, reliable and cost-effective solutions for our customers.”　　Mr. Shengyang Wang, Founder, Chairman and CEO of NOVOSENSE, commented:“Upgrading the NEV industry requires deep collaboration across the value chain. By combining UAES’s system integration expertise with Innoscience’s GaN leadership and NOVOSENSE’s IC design capabilities, we are creating a powerful synergy. This strategic partnership sets a benchmark for industry collaboration, ensuring both technological breakthroughs and market value creation.”　　Dr. Jingang Wu, CEO of Innoscience, added:“The potential of GaN in automotive power electronics is only beginning to be realized. True impact will come from aligning device innovation with system requirements. We look forward to working closely with NOVOSENSE and UAES to extend the boundaries of GaN applications in automotive electrification and to translate technological advantages into tangible industry benefits.”　　A Step Forward for the Industry　　This strategic cooperation marks a pivotal milestone for all three companies. NOVOSENSE, a leading Chinese automotive semiconductor supplier with nearly one billion automotive ICs shipped, complements UAES’s strong system know-how and Innoscience’s GaN device leadership. Together, the three parties will strengthen the value chain, overcome application bottlenecks, and accelerate the transition of the NEV industry toward higher efficiency and sustainability.
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Release time：2025-10-09 13:53 reading：1981 Continue reading>>

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