Mazda and ROHM Begin Joint Development of Automotive Components Using Next-Generation <span style='color:red'>Semiconductors</span>
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Mazda and ROHM Begin Joint Development of Automotive Components Using Next-Generation Semiconductors

　　Mazda Motor Corporation (hereinafter “Mazda”) and ROHM Co., Ltd. (hereinafter “ROHM”) have commenced joint development of automotive components using gallium nitride (GaN) power semiconductors, which are expected to be the next-generation semiconductors.　　(Left) Ichiro Hirose, Director, Senior Managing Executive Officer and CTO of MAZDA / (Right) Katsumi Azuma, Member of the Board and Senior Managing Executive Officer of ROHM　　Since 2022, Mazda and ROHM have been advancing the joint development of inverters using silicon carbide (SiC) power semiconductors under a collaborative framework for the development and production of electric drive units. Now, they have also embarked on the development of automotive components using GaN power semiconductors, aiming to create innovative automotive components for next-generation electric vehicles.　　GaN is attracting attention as a next-generation material for power semiconductors. Compared to conventional silicon (Si) power semiconductors, GaN can reduce power conversion losses and contribute to the miniaturization of components through high-frequency operation.　　Both companies will collaborate to transform these strengths into a package that considers the entire vehicle, and into solutions that innovate in weight reduction and design. Mazda and ROHM aim to materialize the concept and unveil a demonstration model within FY2025, with practical implementation targeted for FY2027.　　“As the shift towards electrification accelerates in pursuit of carbon neutrality, we are delighted to collaborate with ROHM, which aims to create a sustainable mobility society with its outstanding semiconductor technology and advanced system solution capabilities, in the development and production of automotive components for electric vehicles” said Ichiro Hirose, Director, Senior Managing Executive Officer and CTO of Mazda. “We are excited to work together to create a new value chain that directly connects semiconductor devices and cars. Through collaboration with partners who share our vision, Mazda will continue to deliver products filled with the 'joy of driving' that allows customers to truly enjoy driving, even in electric vehicles.”　　“We are very pleased to collaborate with Mazda, which pursues the 'joy of driving,' in the development of automotive components for electric vehicles” said Katsumi Azuma, Member of the board and Senior Managing Executive Officer of ROHM. “ROHM's EcoGaN™, capable of high-frequency operation, and the control IC that maximizes its performance are key to miniaturization and energy-saving. To implement this in society, collaboration with a wide range of companies is essential, and we have established various partnerships for the development and mass production of GaN. By collaborating with Mazda, which aims to create 'cars that coexist sustainably with the earth and society,' we will understand the requirements for GaN from the perspective of application and final product development, contributing to the spread of GaN power semiconductors and the creation of a sustainable mobility society.”　　EcoGaN™ is a trademark or registered trademark of ROHM Co., Ltd.
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Release time：2025-03-31 15:46 reading：255 Continue reading>>
Murata：What Are the Conditions for Increasing the Efficiency of Power Conversion and Motor Drives and for Expanding the Use of SiC and GaN Power <span style='color:red'>Semiconductors</span>?
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Murata：What Are the Conditions for Increasing the Efficiency of Power Conversion and Motor Drives and for Expanding the Use of SiC and GaN Power Semiconductors?

　　Governments around the world and companies in all industries and businesses are coming together to engage in efforts to achieve carbon neutrality (Fig. 1). Every conceivable multifaceted decarbonization measure is being taken. This includes, for instance, the utilization of renewable energies such as solar power, the electrification of equipment that was previously used by burning fossil fuels, and the reduction in power consumption of existing devices like home appliances, IT equipment, and industrial motors.　　Various countries and regions have introduced carbon pricing mechanisms as systems to shift greenhouse gas emissions from business activities to costs. As a result, in addition to being meaningful as social contribution, carbonization initiatives now have a clear numerical impact on the financial statements that serve as a report card for corporate management.　　Full Model Change in Semiconductor Materials for the First Time in 50 Years　　There has been an increase in activity for decarbonization efforts. Against this background, there is a field in semiconductors where the pace of the movement in technological innovation is rapidly accelerating. This is the power semiconductor field.　　Power semiconductors are semiconductor devices that play the role of managing, controlling, and converting the power necessary to operate electrical and electronic equipment. These devices are built into so-called power electronics circuits. These circuits include power circuits that stably supply drive power to home appliances and IT equipment, power conversion circuits to transmit and distribute power without waste, and circuits that drive motors with high efficiency at a torque and rotational speed that can be controlled freely. These power semiconductors, which are key devices to realize a sustainable society, have now started to undergo a once-in-50-years full model change.　　Power semiconductors have various device structures including MOSFET*1, IGBT*2, and diodes. They are used differently according to the purpose. Nevertheless, although the structure differs, silicon (Si) has consistently been used for more than 50 years as the device material. That is because Si has good electrical characteristics and has the property of being easy to process into various device structures at the same time.　　*1: A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is a type of Field Effect Transistor. It functions as an electrical switch. These transistors consist of three layers: a metal, oxide, and semiconductor. The current is turned on and off by applying a voltage to the electrode called a gate.　　*2: An Insulated Gate Bipolar Transistor (IGBT) is a transistor with a structure that combines a MOSFET and bipolar transistor. It is characterized by combining the high-speed operation of the MOSFET with the high withstand voltage and low resistance of the bipolar transistor.　　However, Si-based power semiconductors are no longer able to clear the high level of technical requirements to further reduce the power consumption of various electrical and electronic equipment. To overcome this situation, progress is underway on the utilization of new materials such as silicon carbide (SiC) and gallium nitride (GaN), which are more suitable than Si as materials for power semiconductors. SiC and GaN have multiple physical properties and characteristics suitable for power semiconductors. These include their dielectric breakdown field strength (affects the withstand voltage), mobility (affects the operating speed), and thermal conductivity (affects reliability). If we can develop a device that brings out those excellent characteristics, we can realize power semiconductors with even higher performance.　　SiC-based MOSFETs and diodes have already been commercialized. They are being used in electric vehicle (EV) motor drive inverters, DC/AC converters in solar power generation power conditioners, and other equipment. GaN-based HEMT*3 have also already been commercialized. They are now being used in AC converters for ultra-small PCs, chargers for smartphones, and other equipment.　　*3: A High Electron Mobility Transistor (HEMT) is a Field Effect Transistor that enables high-speed switching by joining semiconductors with differing properties to induce electrons with high mobility.　　Evolution of Capacitors, Inductors, and Other Equipment Is Essential to Draw out the Potential of SiC and GaN　　It is not possible to draw out the full outstanding potential of power semiconductors made based on new materials simply by replacing the Si-based devices in existing power electronics circuits. This is because the other semiconductor ICs, passive components, and even the control software that comprise power electronics circuits have been developed and selected on the assumption they would be used in Si-based power semiconductors. It is necessary to newly re-develop and re-select these peripheral components as well to effectively utilize new material-based power semiconductors.　　Fig. 2: Example of an AC/DC converter circuit utilizing a GaN-based power semiconductor used in data center servers and other technologies　　For example, numerous GaN HEMTs are being used in AC/DC converter circuits that have adopted GaN HEMTs recently introduced to lower power consumption in the power supplies of data center servers (Fig. 2). It is possible to improve the switching frequency (operating frequency) of power electronics circuits by utilizing the features of GaN HEMTs in that they enable high-speed switching at high voltages. The reactance value of capacitors embedded into circuits and inductors in reactor signal processing circuits can be lower in circuits with a high operating frequency. In general, low reactance components have a small size. Therefore, it is possible to downsize the circuit board and to improve the power density. Similarly, introducing SiC MOSFETs even in inverter circuits which drive EV motors and other components enables the downsizing of peripheral components and also allows the overall inverter circuits to be made smaller and more lightweight.　　On the other hand, a high level of noise may arise from high-voltage and high-speed switching power supplies. There is a possibility that noise may then adversely affect the operation of the peripheral equipment. Power supplies comprising power semiconductors made with SiC and GaN switch at an even higher frequency. Therefore, the risk of noise occurring further increases. Accordingly, stricter noise suppression is required than when using existing power electronics circuits. At that time, there is a need to use noise suppression components designed to be applied to high-voltage, large-current, and high-frequency circuits rather than those for conventional circuits.　　In addition, there is also a need for small transformers that operate at even higher frequencies for transformers that are particularly heavy components even among passive components. Low profile planar transformers and other components have already been developed and launched onto the market under the assumption that they will be used in SiC- and GaN-based power semiconductors.　　Attention Focusing on the Evolution of Peripheral Components in Addition to Power Semiconductors　　Various types of semiconductors, not limited to power semiconductors, have been made based on Si up to now. Therefore, many existing electronic components have been developed under the implicit assumption that they will be used by being combined with Si-based semiconductors. It may become necessary to develop new products to suit the new technical requirements instead of simply searching for even better products among existing components to maximize the effect of introducing power semiconductors made with new materials.　　In general, Si-based power semiconductors tend to operate at lower speeds the greater the voltage and current they can handle (Fig. 3). That is the reason why there are not enough small capacitors and reactors that can handle high voltages and large currents. Moreover, there is a trend to simplify the heat dissipation system and to reduce the size, weight, and cost for SiC-based power semiconductors that can operate stably under high temperatures. In these cases, the passive components also need to have a guaranteed high reliability under a high-temperature environment.　　The introduction of new materials in the power semiconductor field is a major move to update the electrical and electronic ecosystem that has been optimized to Si materials for more than 50 years. Therefore, we also want to pay a great deal of attention to the evolution of peripheral electronic components optimized for new materials.
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Release time：2023-11-22 14:42 reading：1727 Continue reading>>
NXP <span style='color:red'>Semiconductors</span> LPCXpresso55S36 Development Board
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NXP Semiconductors LPCXpresso55S36 Development Board

　　NXP Semiconductors LPCXpresso55S36 Development Board provides a powerful, extendable platform for evaluating the LPC5536 Microcontroller (MCU). This development board features a high-speed USB debug probe based on easy firmware update options. The board is compatible with the Arduino UNO R3 and Mikroe click boards. This LPCXpresso55S36 board is lead-free and RoHS-compliant. The board is used with a wide range of development tools, including NXP MCUXpresso IDE, Keil µVision, and IAR embedded workbench.　　FEATURES　　High-speed USB, MCU-link debug probe with CMSIS-DAP and SEGGER J-Link protocol options　　Hardware support for external debug probe or external debug target　　MikroEletronika click expansion option　　LPCXpresso-V3 expansion connectors, compatible with Arduino UNO R3　　PMod-compatible expansion/host connector　　BLOCK DIAGRAM　　LPCXPRESSO55S36 CONNECTORS, PUSH BUTTONS, AND LEDS
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Release time：2023-09-26 15:10 reading：2836 Continue reading>>
What is the relationship between chips, semiconductors and integrated circuits
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What is the relationship between chips, semiconductors and integrated circuits

　　Chips, semiconductors and integrated circuits are important concepts in the electronics field. As technology continues to develop, their application scope and influence are also expanding. So what is the relationship and difference between chips, semiconductors and integrated circuits? Let us find out together in this article.　　What is a chip?A chip, also known as a microcircuit, microchip, or integrated circuit (IC), refers to a silicon chip containing an integrated circuit. It is very small and is often part of a computer or other electronic equipment.　　Chip is the collective name for semiconductor component products. It is the carrier of integrated circuit (IC) and is divided into wafers. A silicon wafer is a small piece of silicon that contains an integrated circuit that is part of a computer or other electronic device.　　What is semiconductor?Semiconductor refers to a material whose electrical conductivity at room temperature is between that of a conductor and an insulator. Semiconductors are widely used in radios, televisions and temperature measurement. For example, a diode is a device made of semiconductors. A semiconductor is a material whose conductivity can be controlled, ranging from an insulator to a conductor. Whether from the perspective of technology or economic development, the importance of semiconductors is huge.　　The core units of most electronic products, such as computers, smartphones or digital recorders, are closely related to semiconductors. Common semiconductor materials include silicon, germanium, gallium arsenide, etc., and silicon is the most influential one in commercial applications among various semiconductor materials.　　What is an integrated circuit?An integrated circuit is a miniature electronic device or component. Using a certain process, the transistors, resistors, capacitors, inductors and other components and wiring required in a circuit are interconnected, made on a small or several small semiconductor chips or dielectric substrates, and then packaged in a tube shell , becoming a microstructure with required circuit functions; all components in it have structurally formed a whole, making electronic components a big step towards miniaturization, low power consumption, intelligence and high reliability. It is represented by the letters “IC” in circuits.　　The inventors of the integrated circuit are Jack Kilby (integrated circuits based on germanium (Ge)) and Robert Noyce (integrated circuits based on silicon (Si)).　　Most applications in the semiconductor industry today are silicon-based integrated circuits. This is a new type of semiconductor device developed in the late 1950s and 1960s. It is a small piece of silicon that integrates semiconductors, resistors, capacitors and other components required to form a circuit with certain functions and the connecting wires between them through semiconductor manufacturing processes such as oxidation, photolithography, diffusion, epitaxy, and aluminum evaporation. on-chip, and then solder the electronic device packaged in a tube. Its packaging shell comes in various forms such as round shell type, flat type or dual in-line type.　　Integrated circuit technology includes chip manufacturing technology and design technology, which is mainly reflected in processing equipment, processing technology, packaging and testing, mass production and design innovation capabilities.　　What is the relationship between chips, semiconductors and integrated circuits?There is a close relationship between chips, semiconductors and integrated circuits.It can be said that a semiconductor is a material, a chip is a carrier of electronic components manufactured using semiconductors, and an integrated circuit is a technology and product that integrates multiple electronic components onto a chip.　　Chip is the collective name for semiconductor component products. It is the carrier of integrated circuit (IC, integrated circuit) and is divided into wafers.　　Integrated circuits refer to active devices, passive components and their interconnections that make up a circuit and are fabricated on a semiconductor substrate or an insulating substrate to form a structurally closely connected and internally related electronic circuit. It can be divided into three main branches: semiconductor integrated circuits, film integrated circuits, and hybrid integrated circuits.　　Semiconductors are the basic materials needed to make chips and integrated circuits. A chip is a carrier made of semiconductor material on which multiple electronic components are integrated. These components can be transistors, resistors, capacitors, etc. and are used to perform various circuit functions.　　Integrated circuits are technologies and products that integrate multiple electronic components onto a single chip. By integrating these components onto a chip, complex circuit functions can be implemented in a smaller, more efficient space. The invention and development of integrated circuits has greatly improved the performance of electronic devices and played an important role in computers, communications, consumer electronics and other fields.　　Therefore, semiconductors are the basic materials for chips and integrated circuits. Chips are the carrier of integrated circuits, while integrated circuits are technologies and products that integrate multiple electronic components on a chip to achieve various functions. The relationship between them can be understood as a hierarchical relationship from materials to products.　　If you need to purchase chips, please visit AMEYA mall to consult online customer service!
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Release time：2023-09-20 14:09 reading：2531 Continue reading>>
NXP <span style='color:red'>Semiconductors</span> TJA1051 High-Speed CAN Transceivers
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NXP Semiconductors TJA1051 High-Speed CAN Transceivers

　　NXP Semiconductors TJA1051 High-Speed CAN Transceivers offer an interface between a Controller Area Network (CAN) protocol controller and the physical two-wire CAN bus. The TJA1051 is intended for high-speed CAN applications in the automotive industry. The device provides differential transmit and receive capability to (a microcontroller with) a CAN protocol controller.The TJA1051 Transceivers are part of the third generation of high-speed CAN transceivers from NXP Semiconductors, supplying significant improvements over first- and second-generation devices such as the TJA1050. The TJA1051 also provides improved ElectroMagnetic Compatibility (EMC) and ElectroStatic Discharge (ESD) performance with:　　• Ideal passive behavior to the CAN bus when the supply voltage is off　　• TJA1051T/3 and TJA1051TK/3 can be interfaced directly to microcontrollers with supply voltages from 3V to 5V　　The TJA1051 implements the CAN physical layer defined in ISO 11898-2:2016 and SAE J2284-1 to SAE J2284-5. This implementation allows reliable communication in the CAN FD fast phase at data rates up to 5Mbit/s. These features make the TJA1051 an exceptional choice for all types of HS-CAN networks in nodes that do not require a standby mode with wake-up capability through the bus.　　The TJA1051 is a high-speed CAN stand-alone transceiver with Silent mode and available in three versions, determined only by the function of pin 5:　　• The TJA1051T is backward compatible with the TJA1050　　• The TJA1051T/3 and TJA1051TK/3 allow for direct interfacing to microcontrollers with supply voltages down to 3V　　• The TJA1051T/E allows the transceiver to be switched to a very low-current Off modeFEATURES　　General　　ISO 11898-2:2016 and SAE J2284-1 to SAE J2284-5 compliant　　Timing guaranteed for data rates up to 5Mbit/s in the CAN FD fast phase　　Suitable for 12V and 24V systems　　Low ElectroMagnetic Emission (EME) and high Electromagnetic Immunity (EMI)　　VIO input on TJA1051T/3 and TJA1051TK/3 allows for direct interfacing with 3V to 5V microcontrollers (available in SO8 and very small HVSON8 packages, respectively)　　EN input on TJA1051T/E allows the microcontroller to switch the transceiver to a very low-current Off mode　　Available in SO8 package or leadless HVSON8 package (3.0mm x 3.0mm) with improved Automated Optical Inspection (AOI) capability　　Dark green product (halogen-free and Restriction of Hazardous Substances (RoHS) compliant)　　AEC-Q100 qualified　　Low-power management　　Functional behavior predictable under all supply conditions　　Transceiver disengages from the bus when not powered up (zero loads)　　Protection　　High ElectroStatic Discharge (ESD) handling capability on the bus pins　　Bus pins protected against transients in automotive environments　　Transmit Data (TXD) dominant time-out function　　Undervoltage detection on pins VCC and VIO　　Thermally protected　　SPECIFICATIONS　　4.5V to 5.5V supply voltage　　-8kV to +8kV electrostatic discharge voltage　　Supply current　　2.5mA silent mode　　10mA normal mode, bus recessive　　70mA normal mode, bus dominant
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Release time：2023-08-22 13:23 reading：2135 Continue reading>>
Cutting edge transistors for semiconductors of the future
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Cutting edge transistors for semiconductors of the future

　　As traditional transistors reach the threshold of their miniaturization potential, the ability to incorporate multiple functionalities within a limited number of units becomes crucial for facilitating the creation of compact, energy-efficient circuits. This, in turn, paves the way for enhanced memory capabilities and the realization of more potent computing systems.　　Transistors that can change properties are important elements in the development of tomorrow's semiconductors. With standard transistors approaching the limit for how small they can be, having more functions on the same number of units becomes increasingly important in enabling the development of small, energy-efficient circuits for improved memory and more powerful computers. Researchers at Lund University in Sweden have shown how to create new configurable transistors and exert control on a new, more precise level.　　Transistors that can change properties are important elements in the development of tomorrow's semiconductors. With standard transistors approaching the limit for how small they can be, having more functions on the same number of units becomes increasingly important in enabling the development of small, energy-efficient circuits for improved memory and more powerful computers. Researchers at Lund University in Sweden have shown how to create new configurable transistors and exert control on a new, more precise level.　　In view of the constantly increasing need for better, more powerful and efficient circuits, there is a great interest in reconfigurable transistors. The advantage of these is that, in contrast to standard semiconductors, it is possible to change the transistor's properties after they have been manufactured.　　Historically, computers' computational power and efficiency have been improved by scaling down the silicon transistor's size (also known as Moore's Law). But now a stage has been reached where the costs for continuing development along those lines has become much higher, and quantum mechanics problems have arisen that have slowed development.　　Instead, the search is on for new materials, components and circuits. Lund University is among the world leaders in III-V materials, which are an alternative to silicon. These are materials with considerable potential in the development of high-frequency technology (such as parts for future 6G and 7G networks), optical applications and increasingly energy-efficient electronic components.　　Ferroelectric materials are used in order to realize this potential. These are special materials that can change their inner polarization when exposed to an electric field. It can be compared to an ordinary magnet, but instead of a magnetic north and South Pole, electric poles are formed with a positive and a negative charge on each side of the material. By changing the polarization, it is possible to control the transistor. Another advantage is that the material "remembers" its polarization, even if the current is turned off.　　Through a new combination of materials, the researchers have created ferroelectric "grains" that control a tunnel junction—an electrical bridging effect—in the transistor. This is on an extremely small scale—a grain is 10 nanometers in size. By measuring fluctuations in the voltage or current, it has been possible to identify when polarization changes in the individual grains and thus understand how this affects the transistor's behavior.　　- The Future of the Semiconductor Industry　　In addition to the upstream IC design, the midstream foundry, the DRAM industry, and the downstream packaging and testing, photomask, equipment and other industries, semiconductors have a huge group, and the application of semiconductors has also expanded to the electronic information industry, automotive electronics, Aerospace, medical, precision machinery and other industries.　　While the future of the semiconductor industry looks bright, no one knows with certainty where it’s headed. The direction it moves in depends on many factors, which include the following:　　· the experimentation with new semiconductor materials　　· the increase in the price of rare earth metals　　· the accelerated industrial adoption of new technologies in artificial intelligence (AI), the Internet of Things (IoT), and related fields　　These factors and others will inevitably impact sales, create opportunities, and present fresh challenges.　　At our core, we have a passion to create a better world by making electronics more affordable through semiconductors. This passion is alive today as we continue to pioneer advances in integrated circuits. Each generation of innovation builds upon the last to make technology smaller, more efficient, more reliable and more affordable. Contact us today to learn more about the services provided by Ameya360.
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Release time：2023-07-11 11:46 reading：3023 Continue reading>>
NXP <span style='color:red'>Semiconductors</span> PF5030 Fail-Safe System Basis Chip PMICs
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NXP Semiconductors PF5030 Fail-Safe System Basis Chip PMICs

　　NXP Semiconductor PF5030 Fail-Safe System Basis Chip PMICs with multiple switch-mode power supplies (SMPSs) and low-dropout regulators (LDOs) are designed for S32Z2/E2 processors. A maximum input voltage of up to 5.25V makes the PF5030 PMICs ideal for working with NXP front system supply families (FS86, FS6x) or any other front supply in the automotive drive train market.       Built-in One-Time Programmable (OTP) memory stores key start-up configurations that drastically reduce external components typically used to set external regulators' output voltage and sequence. Regulator parameters are adjustable through the I2C after start-up, offering flexibility for different system states.　　FEATURES　　Voltage　　5.25VDC maximum operating voltage　　Supports operating voltage range down to 3.3V　　Low power OFF mode with low sleep current (15?A typical)　　Power supplies　　BUCK1/2 low voltage integrated synchronous buck converter　　Configurable output voltage from 0.7V to 1.5V and current capability up to 3.5ADC　　Capable of multiphase operation up to 7.0ADC　　BUCK3 low voltage integrated synchronous buck converter　　Configurable output voltage from 1.0V to 4.1V and current capability up to 2.5ADC　　LDO1/2 low voltage LDO regulator for MCU I/O and system peripheral　　Configurable output voltage from 1.1V to 4.1V and current capability up to 400mADC　　System support　　1x input pin for power-ON detection, 1.8V, 3.3V, and 5.0V compatible　　Analog multiplexer with full system voltages and temperature monitoring　　Enhanced leader/follower power-up sequencing management through XFAILB pin　　10ms optional RSTB release delay during power-up for certain MCU compliance　　Device control via 32-bit I2C interface with 8-bit CRC　　Compliance　　EMC optimization techniques on switching regulators, including spread spectrum and manual frequency tuning　　EMI robustness supporting various automotive EMI test standards　　IEC 61967-4 conducted emission　　IEC 62132-4 conducted immunity　　Functional safety　　ASIL D capability on safety goal 1 (SG1/CSG_01) on UV/OV for all S32Z2/E2 power rails (0.8V, 1.1V, 1.8V, and 3.3V)　　Configurable ASIL from QM to ASIL D on safety goal 2 (SG2/CSG_02) on MCU monitoring function (watchdog)　　Independent voltage monitoring circuitry　　Up to 6x voltage monitoring inputs with 1.0% target accuracy　　Logical and analog built-in self-test (LBIST/ABIST)　　Safety outputs with latent fault detection mechanism (PGOOD, RSTB, FS0B)　　Configuration and enablement　　40-pin QFN with exposed pad for optimized thermal management　　OTP programming for device customization　　APPLICATIONS　　EV propulsion and power train domain controllers　　Chassis-integrated systems　　S32Z2/E2 companion chips
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Release time：2023-04-26 11:35 reading：1285 Continue reading>>
AMEYA360:NXP <span style='color:red'>Semiconductors</span> PCA9451AHN PMIC
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AMEYA360:NXP Semiconductors PCA9451AHN PMIC

　　NXP Semiconductors PCA9451AHN PMIC is a highly integrated power management solution for reliable and efficient application performance. NXP Semiconductors PCA9451AHN are designed to support i.MX 93x family processors. This single-chip PMIC is versatile enough to cater to 1-cell Li-Ion, Li-polymer battery portable applications, and 5V adapter non-portable applications. The PCA9451AHN is packed with features that make it a top choice for engineers looking to design power-efficient solutions.　　FEATURES　　Six high-efficiency step-down regulators　　One 4A dual-phase buck regulator with DVS feature and remote senseOne 2A buck regulator with DVS feature and remote senseOne 3A buck regulator　　One 2A buck regulator　　One 1.5A buck regulator　　Three linear regulators　　One low IQ 10mA LDO　　One 150mA LDO　　One 200mA LDO　　400mA load switch with a built-in active discharge resistor32.768kHz crystal oscillator driver and buffer outputProduct longevity program　　This product is included in the NXP Product Longevity program, with assured supply for a minimum of 15 years after launch      APPLICATIONS　　Automotive　　Hue bridge　　Smart home　　Audio sound bar　　Energy grid equipment　　Energy meter　　Environmental control　　Home security hub　　Sensor hub　　Smart doorbell　　Smart lock　　Industrial　　EV charging station　　I/O control　　Industrial gateway　　Industrial HMI　　Machine vision and scanning
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Release time：2023-04-19 13:36 reading：2207 Continue reading>>
Ameya360:NXP <span style='color:red'>Semiconductors</span> GoldBox 3 Vehicle Networking Development Platform
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Ameya360:NXP Semiconductors GoldBox 3 Vehicle Networking Development Platform

　　NXP Semiconductors GoldBox 3 Vehicle Networking Development Platform is designed for vehicle Service-Oriented Gateways (SoGs), domain control applications, high-performance processing, and safety and security applications. This development platform offers high-performance computing capacity, real-time network performance, multi-Gigabit packet acceleration, security, and rich input/output (I/O).　　These target the central gateway, domain controller, FOTA, secure key management, smart antenna, and high-performance central compute nodes. The GoldBox 3 vehicle networking development platform supports low-power mode, multiple wake-up sources, and two M.2 modules. Typical applications include Firmware Over-the-Air (FOTA), automotive access points, safety processors, service-oriented gateway, vehicle compute, and zonal gateways.　　FEATURES　　Hardware:　　Supports service-oriented gateway and domain controller applications　　Multiple network interfaces featuring 18 CAN/CAN FD and 12 Ethernet ports　　Supports low-power mode and multiple wake-up sources　　Supports two M.2 modules (M-key slot and E-key slot)　　12V AC-DC adapter power supply　　Interfaces:　　LIN, CAN/CAN FD, 100BASE-T1, 1000BASE-T / 2.5GBASE-T, 100BASE-TX, 1000BASE-T, FlexRay, USB, PCIe, JTAG, UART, AURORA, and M.2 slots　　Safety:　　ISO 26262 support by using safety components and architecture　　KIT CONTENTS　　Rugged enclosure with integrated thermal management　　S32G reference design board 3　　Universal AC adapter　　AC/DC 12V 6.67A power supply　　32GB SD card　　DuPont line　　2x USB A-to-micro B cables (UART0/1)　　CAT6A Ethernet cable　　Ethernet loopback cable　　3x Heatsinks　　FAN solution for S32G　　Screws (M.2 slots)　　1.27mm mini jumpers and cables　　APPLICATIONS　　Automotive access point　　Automotive data logger　　Automotive zone controller　　Domain controllers　　Firmware Over-the-Air (FOTA)　　Gateway　　In-vehicle networks　　Safety processors　　Service-oriented gateway　　Vehicle compute　　Zonal gateways
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Release time：2023-03-24 13:44 reading：1889 Continue reading>>
AMEYA360:NXP <span style='color:red'>Semiconductors</span> S32G3 Vehicle Networking Reference Design
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AMEYA360:NXP Semiconductors S32G3 Vehicle Networking Reference Design

　　NXP Semiconductors S32G3 Vehicle Networking Reference Design is designed for vehicle Service-Oriented Gateways (SoGs), domain control applications, high-performance processing, and safety and security applications. This reference design is based on the octal Arm Cortex-A53 cores and quad, dual-core lockstep Arm Cortex-M7 cores.       The S32G3 vehicle networking reference design offers high-performance, real-time network performance, multi-gigabit packet acceleration and security, and rich input/output (I/O). Typical applications include Firmware Over-the-Air (FOTA), automotive access points, safety processors, service-oriented gateway, vehicle compute, and zonal gateways.　　FEATURES　　Hardware:　　Supports service-oriented gateway and domain controller applications　　Multiple network interfaces, featuring 18 CAN/CAN FD and 12 Ethernet ports　　Supports low-power mode and multiple wake-up sources　　Supports two M.2 modules (M-key slot, E-key slot)　　ISO 26262 support by using safety components and architecture　　12V AC-DC adapter　　Interfaces:　　LIN, CAN/CAN FD, 100BASE-T1, 1000BASE-T / 2.5GBASE-T, 100BASE-TX, 1000BASE-T, FlexRay, USB, PCIe, JTAG, UART, AURORA, and M.2 slots　　KIT CONTENTS　　S32G Reference Design Board 3　　Universal AC adapter　　AC/DC 12V 6.67A power supply　　32GB SD card　　DuPont line　　2x USB A-to-micro B cables (UART0/1)　　CAT6A Ethernet cable　　Ethernet loopback cable　　3x Heatsinks　　FAN solution for S32G　　Screws (M.2 slots)　　1.27mm mini jumpers and cables　　APPLICATIONS　　Automotive access point　　Automotive data logger　　Automotive zone controller　　Domain controllers　　Firmware Over-the-Air (FOTA)　　Gateway　　In-vehicle networks　　Safety processors　　Service-oriented gateway　　Vehicle compute　　Zonal gateways
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Release time：2023-03-24 13:41 reading：2133 Continue reading>>

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