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SanDisk Goes Beyond HBF: Patent Bonds Processor onto NAND Tile, with HBM Stacks on Shared Interposer

　　While SanDisk is speeding up the development of High Bandwidth Flash (HBF), a next-generation architecture that vertically stacks NAND, the company is also advancing additional memory concepts aimed at addressing structural capacity constraints.　　According to a U.S. patent (US 12,430,274 B2) filed and published by SanDisk earlier, the proposed design integrates a multi-core processor directly onto a CBA (CMOS Bonded to Array) memory tile — which itself combines a large NAND flash array with a CMOS logic layer.　　The integrated stack is then mounted on an interposer, with stacks of HBM semiconductor dies affixed around one or more sides of the combined stack, SanDisk notes.　　Rationale Behind the Design　　The design rationale behind SanDisk’s approach, as noted by Wccftech, is partly driven by the inherent limitations of HBM, particularly its relatively constrained capacity, as well as the challenges that HBF has yet to fully address, including latency, power efficiency, and system-level integration complexity.　　To overcome HBM’s capacity ceiling, SanDisk previously introduced its HBF architecture, which adopts a similar concept to HBM by vertically stacking multiple layers of NAND flash and connecting them via through-silicon vias (TSVs) to form a unified memory stack, according to Wccftech.　　While current HBM solutions typically offer 32–64GB per stack, HBF is designed to scale significantly higher, with reported capacity reaching up to 4TB. According to SanDisk, HBF is capable of closely matching HBM’s bandwidth while delivering 8-16x the capacity of HBM at a similar cost.　　However, despite NAND offering higher capacity at a lower cost, Wccftech also points out that it is positioned further from the compute die, resulting in slower data access compared to DRAM-based architectures. In response, SanDisk’s latest patent, as highlighted by the report, proposes a 3D stacking design in which a NAND flash tile, built using a CBA structure, is positioned beneath a compute tile such as an AI accelerator or GPU.　　Under this configuration, HBM DRAM would still be integrated on the same interposer, but would serve a distinct role within the overall memory-compute hierarchy, according to Wccftech. As highlighted by the report, this architecture allows HBM to handle immediate, high-speed memory operations, while the NAND flash layer within the memory tile is used for read/write-intensive workloads and large-scale data storage.

Key word：

SanDisk

Release time：2026-06-23 10:58 reading：129 Continue reading>>

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Apple A22 Pro May Adopt 1.4nm in 2028; TSMC Remains Primary Supplier, Intel Reportedly Considered

　　Apple is expected to use TSMC’s 2nm for its A20 and A20 Pro chips, but industry discussions are already shifting to the A22 Pro and a potential move to 1.4nm. According to Bloomberg, Apple is expected to adopt a 1.4nm process for the A22 Pro, which is slated for high-end iPhone models in 2028. While TSMC is expected to remain Apple’s primary manufacturing partner, the report notes that the company is also evaluating Intel as a potential secondary production source.　　Based on the reported timeline, the A21 Pro is expected to remain on TSMC’s 2nm, potentially transitioning to the enhanced N2P variant, which offers incremental improvements over N2, according to Wccftech.　　Wccftech also notes that costs could rise significantly, with TSMC’s 1.4nm wafers estimated to cost around US$45,000 each. As a result, the report suggests that only the A22 Pro, rather than the standard A22, will be manufactured on the 1.4nm node.　　As noted by MacRumors, current rumors suggest Intel could manufacture lower-end chips for products such as the iPad and Mac. At the same time, Intel CEO Lip-Bu Tan is seeking to revive the company’s foundry business by focusing on leading-edge nodes. According to TechPowerUp, Intel expects its 14A node to enter risk production in 2028, followed by high-volume manufacturing in 2029.　　Beyond the possibility of Apple adopting TSMC’s 1.4nm node for its A22 chips, the company is reportedly preparing three major product launches for late 2027. According to 9to5Mac, citing Bloomberg, these include a 20th-anniversary iPhone featuring a nearly edge-to-edge display and curved glass that wraps around the sides, a second-generation foldable iPhone, and AirPods equipped with built-in cameras.　　TSMC’s A14 Roadmap Takes Shape　　TSMC has been accelerating construction of its 1.4nm fab at the Central Taiwan Science Park. According to Economic Daily News, foundation piling for the first phase has largely been completed, with progress reportedly ahead of schedule. Trial production could begin as early as 3Q27, with mass production targeted for the second half of 2028.　　Compared with N2, A14 is expected to deliver a 10–15% performance improvement at the same power level, or reduce power consumption by 25–30% at the same performance level, while increasing logic density by more than 20%, according to TSMC.

Key word：

Apple

Release time：2026-06-18 10:15 reading：263 Continue reading>>

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SK hynix Reportedly Pulls Forward HBM4E Sample Timeline, Eyeing June–July Shipments to Key Customers

　　Samsung announced the start of HBM4E sampling in late May and later unveiled an HBM5 mock-up for the first time at COMPUTEX 2026. Against this backdrop, rival SK hynix is also stepping up its next-generation HBM push, with South Korean media outlet Newsis reporting that the memory giant has secured positive results in HBM4E development and is nearing sample shipments to key customers.　　Notably, certain analysts cited by the report expect SK hynix to begin HBM4E sample shipments as early as this month, or by July at the latest. The company had previously guided that sampling would start in the second half of the year, suggesting the timeline is now being pulled forward, the report adds.　　As Newsis notes, next-generation HBM is highly customized for customers, and earlier sample shipments enable faster performance validation and optimization—ultimately translating into a strategic edge in securing final mass production orders.　　Beyond sampling timelines, broader supply and pricing dynamics are also shifting, which may give early movers key advantages. According to TrendForce, as the market enters 2Q26, negotiations between buyers and suppliers have shifted toward HBM4 supply agreements for 2027, which is expected to become the market’s mainstream project generation. The shift underscores how both Samsung and SK hynix are accelerating HBM4 and HBM4E development amid tightening market cycles.　　SK hynix HBM4E Specs Under Spotlight　　As highlighted by Newsis, SK hynix’s HBM4E is likely to be used in NVIDIA’s next-generation AI accelerator, Rubin Ultra, set for release next year. In line with this platform upgrade, TrendForce notes that NVIDIA’s Rubin Ultra is expected to further increase HBM capacity per GPU to 384GB.　　Against this backdrop of rising system-level requirements, HBM4E specifications are also being pushed higher across the stack. According to Newsis, SK hynix’s HBM4E core die is expected to adopt a 1c DRAM process node, compared with the 1b node used in HBM4. In addition, The Chosun Daily previously reported that the company is likely to use TSMC’s 3nm process for its HBM4E logic die, aiming to challenge Samsung’s 4nm design.　　On the competitive front, Samsung Electronics completed the world’s first shipment of HBM4E samples in late May, supplying them to NVIDIA, according to Yonhap News.　　Samsung’s HBM4E combines a 1c DRAM core die with a 4nm foundry-based base die, delivering speeds of up to 14Gbps per pin and peaking at 16Gbps, equivalent to a maximum bandwidth of 4TB/s, the report notes.

Key word：

SK hynix

Release time：2026-06-16 10:43 reading：362 Continue reading>>

Trade news

Lenovo Reportedly Set for July Price Hikes Across Product Portfolio as Memory Costs Pressure PC Market

　　With memory prices remaining elevated, consumer electronics could be heading for another round of price increases. Chinese media outlet Lanjinger.com, citing sources familiar with the matter, reports that Lenovo plans to raise prices across its product lineup from July, broadly in line with the previous round of increases, after the 618 shopping festival ends.　　Notably, Lanjinger.com highlights this would not be Lenovo’s first price hike this year, pointing to March when the PC maker issued nationwide price adjustment notices and raised retail prices for some models by over RMB 1,000. The report adds it has already urged distributors to lock in inventory and secure current pricing ahead of the upcoming increase, with a formal notice expected to be issued by the end of June.　　The pricing pressure is spreading across the PC industry. Dell, as highlighted by the report, has already raised prices on certain products as well, with server prices increasing 20%–40%. Prices for desktops, notebooks, and workstations are also expected to see further significant hikes by July, the report suggests.　　A separate report from Sina also suggests the sharp rise in costs has put pressure on the entire PC industry, prompting several major vendors to begin raising prices as early as six months ago. Dell, according to Sina, increased prices across its commercial PC portfolio in late 2025, with hikes ranging from 10% to 30%.　　Memory Price Surge Drives PC Cost Pressure　　Surging memory prices have become a key driver behind rising costs for PC brands. Lanjinger.com, citing TrendForce data, reports that cumulative spot price increases for DRAM and NAND flash have exceeded 300%. By May 2026, the average price of PC-grade DDR4 8Gb memory had climbed to US$20, the highest level since TrendForce began tracking the market, according to the report.　　Against this backdrop, Taipei Times, citing TrendForce’s latest forecast, reports that global notebook shipments are now expected to decline 13% YoY in 2026, as soaring memory prices and tight CPU supply weigh on demand in the second half—marking a sharper downturn than the 9.4% drop projected in January.

Key word：

Lenovo

Release time：2026-06-11 10:33 reading：478 Continue reading>>

Trade news

Samsung, NVIDIA Deepen Ties as Talks Reportedly Expand to HBM5 Next Year and Next-Gen Groq Chips

　　Following Jensen Huang’s high-profile meetings with SK hynix during his South Korea visit, Samsung Electronics Vice Chairman Jun Young-hyun met with the NVIDIA CEO on June 8 to discuss potential cooperation in HBM and foundry services. According to The Chosun Daily, Jun said the discussions focused on collaboration in HBM and foundry. He added that the near-term priority is to ensure stable supplies of HBM4 and SOCAMM this year, while the two companies also discussed longer-term collaboration beginning next year, including HBM4E, foundry services, and HBM5.　　Samsung, NVIDIA Expand Foundry Cooperation　　On the foundry front, Samsung Electronics is in discussions with NVIDIA on next-generation chip production using its advanced process technologies, including the Drive AGX Thor autonomous driving chip and the Groq language processing unit (LPU), according to Seoul Economic Daily.　　Jun said Samsung is manufacturing NVIDIA’s autonomous driving and Groq chips using 4nm and 8nm nodes, according to ZDNet. He added that the partnership also extends to next-generation Groq chips.　　As highlighted by Seoul Economic Daily, Samsung currently manufactures the third-generation Groq LPU (LP30) on its 4nm process. Jun’s remarks suggest the company is also in position to produce the next-generation LP40, despite industry expectations that TSMC could secure the order through its advanced packaging strengths.　　Samsung Details Memory Portfolio for NVIDIA　　On the memory front, Samsung Electronics is supplying HBM4 (6th-generation) memory with data transfer speeds exceeding 11.7 Gbps per pin for NVIDIA’s Vera Rubin platform, according to Yonhap News. The company is also providing LPDDR5X-based SOCAMM2 modules for the Vera CPU, as well as its PCIe Gen6-based PM1763 storage solution.　　Yonhap News adds that Samsung’s HBM4E combines DRAM core dies with a proprietary 4nm foundry base die, enabling operating speeds of 14 Gbps per pin and achieving up to 16 Gbps in testing.　　Meanwhile, Vice Chairman Jeon stopped short of confirming whether Samsung Electronics and NVIDIA would sign a long-term memory supply agreement, saying Samsung would do its utmost as a key partner to support NVIDIA’s success, according to Newspim.　　NVIDIA CEO Jensen Huang also discussed the company’s partnership with Samsung during a Q&A session following the NVIDIA Korea AI Ecosystem Reception. According to Dealsite, Huang said NVIDIA and Samsung have long collaborated in the Application-Specific Integrated Circuit (ASIC) sector and are jointly developing new ASIC products. He added that the two companies also share a long history of cooperation in memory technologies.

Key word：

Samsung

Release time：2026-06-10 10:37 reading：516 Continue reading>>

Trade news

Largan Expands CPO Push, Plans September Fiber Array Pilot Line, Eyes 2027 Revenue Contribution

　　Taiwan’s Largan Precision, a key optical lens supplier in Apple’s supply chain, is expanding into CPO. According to Liberty Times, Chairman Adam Lin said after the company’s shareholders’ meeting today that Largan plans to establish an automated pilot production line for its fiber array (FA) products in September and may invite a potential major customer to visit the facility.　　Lin said the company has developed a proprietary technology that enables conventional V-grooves and optical fibers to be assembled into high-precision FA products. He noted that tolerance stack-up between V-grooves and optical fibers has been a key challenge for the industry, often forcing competitors to rely on the highest-precision V-grooves and optical fibers to achieve the required accuracy. Largan, however, can use less-than-perfect components to produce FA products with precision below 0.3 microns, outperforming the industry’s typical range of 0.5 to 0.8 microns, the report highlights.　　Largan made its first appearance at Computex this year, showcasing CPO-related solutions and expanding into optical components such as FAUs (fiber array units) and MLAs (microlens arrays). The move is widely viewed as an important signal that the company is seeking new high-margin growth drivers beyond its core smartphone lens business, as noted by China Times.　　The company’s investment in fiber arrays aligns with growing demand for CPO technologies. TrendForce forecasts that co-packaged optics (CPOs) will steadily increase their share of optical communication modules in AI data centers, with penetration potentially reaching 35% by 2030.　　Largan Sees Multi-Row FAs as Next Growth Driver　　FAUs (fiber array units) combine FAs with components such as microlens arrays (MLAs) and prism microlens arrays (PMLAs). According to Liberty Times, Lin expects single-row products to remain the industry’s primary source of demand through 2028. Over the next three to four years, however, rising computing requirements are expected to drive a gradual shift toward two-row, four-row, and eventually eight-row configurations, the report notes. Lin said this transition would play to Largan’s strengths, citing the company’s multilayer stacking and high-precision technologies as key differentiators.　　Largan Eyes 2027 FA Revenue as Qualification Process Advances　　Looking ahead, Lin said FA products could begin contributing to revenue in 2027 if Largan successfully completes customer qualification, the Liberty Times report notes. However, because the products have yet to enter mass production, the company is not currently able to estimate yields or gross margins. Meanwhile, preparations for low-volume production are expected to take about six months to one year. Lin said the production line will be highly automated to improve process precision and manufacturing capacity while reducing reliance on labor-intensive production.

Key word：

Largan

Release time：2026-06-10 10:29 reading：502 Continue reading>>

Trade news

Intel Says 18A May Reach Strong Margins by 2027; Notebook Chips on the Node Mark Fastest Ramp in 5 Years

　　Intel is betting heavily on 18A to support the company’s turnaround plan. According to The Register, Chief Financial Officer David Zinsner said that early last year Intel faced the challenge of trying to improve both performance and yield at the same time. The company later shifted its focus to stabilizing performance first, and with that objective largely achieved, it is now concentrating on improving yield month by month.　　Zinsner said Intel’s goal is to achieve yield levels that support strong margins, adding that the company is currently ahead of schedule to reach that target by the end of 2027, as the report highlights. He added that after Lip-Bu Tan joined the company, Intel began sharing more manufacturing data with its vendors. The increased collaboration helped improve yields and made a dramatic difference.　　Looking beyond 18A, Zinsner also expressed confidence in Intel’s 14A. According to the report, he said the company has adopted a more aggressive approach than it did with 18A, adding that yield and performance metrics are currently ahead of where 18A was at the same stage of development.　　Intel 3 and 18A Supply Set to Rise Amid Strong CPU Demand　　In addition to providing an update on Intel’s manufacturing roadmap, Zinsner highlighted growing supply from Intel 3 and 18A, according to Seeking Alpha. As cited by the report, he said Intel expects a meaningful increase in supply from both Intel 3 and 18A over the coming quarters to meet rising demand. He added that 18A-based notebook processors are ramping quickly and represent the company’s fastest-ramping product launch in at least the past five years.　　The company is also seeing rising CPU demand. According to The Register, Zinsner said it remains difficult to predict the full extent of future growth, but he expects the market to be substantial. He said the key challenge at present is supply, adding that Intel sees sufficient demand in the market and should be able to grow data center revenue meaningfully if it executes successfully on planned supply ramps.

Key word：

Intel

Release time：2026-06-05 10:40 reading：477 Continue reading>>

Trade news

NVIDIA Enters PC Market with RTX Spark Featuring MediaTek-Co-Designed N1X CPU on TSMC 3nm

　　As traditional CPU leaders such as Intel push further into the AI accelerator market, NVIDIA is moving in the opposite direction—leveraging its dominance in AI computing to expand into the PC processor arena. At GTC Taipei on June 1, CEO Jensen Huang unveiled the NVIDIA RTX Spark, developed in partnership with Microsoft and powered by the new Arm-based N1X processor co-designed with MediaTek, according to NVIDIA and CNBC.　　According to CNBC, the initial rollout will include more than 30 notebook models and 10 desktop systems. RTX Spark-powered devices from Microsoft, Dell, HP, ASUS, Lenovo, and MSI are expected to debut this fall, marking NVIDIA’s first large-scale push into the Windows PC CPU market.　　CNBC adds that the platform combines NVIDIA’s Blackwell GPU architecture with the N1X CPU and 128GB of unified memory, bringing data center-class AI capabilities to personal computers. Notably, the new PC processor will be manufactured using TSMC’s 3nm process, which is currently produced exclusively in Taiwan, according to CNBC.　　More Spec Details　　Interestingly, as noted by The Verge, the flagship RTX Spark mirrors the DGX Spark almost exactly — 20 CPU cores, 6,144 GPU cores, 128GB of LPDDR5X memory — though NVIDIA plans to release leaner, more affordable variants, with some configurations dropping to just 16GB of RAM.　　Meanwhile, NVIDIA has provided additional details on the platform’s performance. According to The Verge, with up to 128GB of unified memory—on par with AMD’s previous-generation Strix Halo—RTX Spark laptops and desktops are also capable of hosting AI agents with up to 120 billion parameters, a capability Microsoft appears eager to integrate into Windows.　　Powered by RTX Spark, NVIDIA claims the system can render a 90GB 3D scene, edit 12K video, or run graphically intensive titles like Indiana Jones and the Great Circle at a smooth 100fps in 1440p—all within a 14mm-thin laptop operating without being plugged into power, the report adds.　　CNBC, citing an NVIDIA spokesperson, reports that RTX Spark is described as being “roughly equivalent” to the company’s flagship RTX 5070 laptop GPU.　　NVIDIA is certainly not the only player eyeing to expand its CPU footprint. As noted by CNBC, Apple now designs its own Arm-based processors for Mac computers, having rolled out a higher-end MacBook lineup powered by its latest M5 chips in March. In the same month, Arm unveiled its first in-house CPU, with Meta reportedly serving as the launch customer for the Arm AGI CPU, according to TechCrunch.

Key word：

NVIDIA

Release time：2026-06-02 10:29 reading：711 Continue reading>>

Trade news

Nexperia China Says MOSFET, Logic IC Supply Chains Complete as Independent Operations Largely in Place

　　After last year’s control dispute between Wingtech and Nexperia’s Netherlands headquarters sent shockwaves through the industry, Nexperia China now says it has made significant progress in building independent operations. According to EE Times China, Wingtech Chairwoman Ruby Yang announced on May 29 that Nexperia China has largely completed the setup of its independent operating system.　　Yang revealed that Nexperia China’s core management, R&D, and market teams are now fully based in China. The report notes that the company’s capacity and delivery capabilities have steadily recovered, while it continues to build a “China for China, China for Global” full-stack supply chain across wafer manufacturing, packaging and testing, and quality control.　　The announcement comes as Wingtech faces mounting pressure. According to ESM China, the company said on April 29 that its auditor issued a “disclaimer of opinion” on its 2025 financial report, triggering a delisting risk warning under relevant rules.　　Full-Stack Supply Chains Advance Across Key Product Lines　　In terms of product layout, Nexperia China currently covers three core business lines: MOSFETs, logic ICs, and bipolar transistors, including protection devices. Yang said none of the three previously had a fully domestic, full-stack supply chain. However, according to the report, MOSFET and logic IC products have now established such supply chains.　　The bipolar transistor line is being upgraded to a 12-inch platform and is expected to complete its full-stack domestic supply chain within 2026. Bipolar transistors entered small-batch mass production in March 2026, with capacity for protection devices such as ESD (Electrostatic Discharge) and TVS (Transient Voltage Suppressor) products expected to gradually come online in the second half of 2026, the report notes.　　Under the plan, 19 products are expected to be ready for supply by next month, covering more than 80% of demand, the report adds. Despite the severe supply-chain fallout from last year’s Wingtech-Nexperia control dispute, the report indicates that Nexperia China has maintained large-scale delivery capabilities. Since mid-October 2025, it has shipped more than 11 billion chips to over 800 customers.　　Wingtech Seeks Court Action in Nexperia Control Dispute　　Meanwhile, the battle for control of Nexperia has escalated further. According to South China Morning Post, Wingtech said last week that it had filed a lawsuit in a court in China’s southern Guangdong province against Nexperia and three of its executives. The suit demands the restoration of full corporate control and 8 billion yuan, or US$1.18 billion, in compensation.　　As Bloomberg notes, Wingtech asked the court to order the defendants to stop carrying out or supporting the disputed measures, including by withdrawing legal proceedings in the Netherlands and revoking a Dutch ministerial order issued last September under the Goods Availability Act. If the defendants fail to comply, Wingtech would seek the transfer of Nexperia and related subsidiaries to the company free of charge.

Key word：

Nexperia China

Release time：2026-06-02 10:25 reading：623 Continue reading>>

Trade news

Samsung Starts Shipping Industry-First HBM4E Samples 3 Months After HBM4 Ramp; Performance Up 20%+

　　Just months after rolling out HBM4 shipments in early 2026, Samsung has begun providing samples of the industry’s first 12-layer HBM4E to major global partners, according to the company’s latest press release.　　Given that HBM4 shares the same 1c DRAM process and 4nm base die architecture as HBM4E, and is already in mass production, industry observers suggest the newly shipped HBM4E samples are also well positioned to transition into mass production. Samsung adds that it plans to proceed with HBM4E mass production in line with client-specific timelines.　　Meanwhile, Samsung is also expanding mass production and supply of HBM4, which became the world’s first HBM4 to enter mass production and shipment in February. In December last year, Samsung’s HBM4 received top-tier evaluation after demonstrating an industry-leading 11.7Gbps speed in System-in-Package (SiP) testing, the final certification stage, the company adds.　　According to News1, the latest development makes Samsung the first to supply HBM4E. Industry observers cited by the report also noted that starting from HBM4, customer-specific design flexibility and stable large-scale supply capabilities will become even more critical. Against this backdrop, Samsung’s integrated strengths across memory, foundry, and advanced packaging are expected to stand out even more clearly, the report adds.　　HBM4E Upgrade with 20% Performance Boost, 30% Higher Capacity　　In terms of performance, Samsung notes that HBM4E marks a notable upgrade over the previous generation, offering a stable 14Gbps pin speed that can scale up to 16Gbps for more demanding AI workloads. Compared with HBM4, the new memory delivers over 20% higher performance and reaches bandwidth of up to 3.6TB/s per stack, significantly improving compute efficiency for large language models (LLMs) and next-generation AI systems.　　Additionally, Samsung’s 12-layer HBM4E is currently offered in a 48GB capacity, which is more than 30% higher than the previous generation. The company plans to expand the lineup to include 32GB (8-layer) and 64GB (16-layer) variants to better align with diverse customer requirements as well.　　From an efficiency standpoint, Samsung highlights that advanced low-power design techniques and an optimized packaging architecture have improved energy efficiency by 16% while reducing thermal resistance by more than 14% compared with the previous generation.　　HBM4E Progress Among Rivals　　Meanwhile, progress from SK hynix and Micron in HBM4E has come under closer market scrutiny following Samsung’s advances. According to Yonhap News Agency, SK hynix had initially planned to begin HBM4E sample shipments in the second half of this year, but recent reports indicate smoother-than-expected development progress, bringing forward its timeline.　　On the other hand, Micron said its first HBM4E product will follow JEDEC standards, with mass production ramp-up targeted for 2027, according to STOCK Analysis.

Key word：

Samsung

Release time：2026-05-29 10:18 reading：698 Continue reading>>

model	brand	Quote
BD71847AMWV-E2	ROHM Semiconductor
MC33074DR2G	onsemi
CDZVT2R20B	ROHM Semiconductor
TL431ACLPR	Texas Instruments
RB751G-40T2R	ROHM Semiconductor

model	brand	To snap up
BP3621	ROHM Semiconductor
IPZ40N04S5L4R8ATMA1	Infineon Technologies
STM32F429IGT6	STMicroelectronics
ESR03EZPJ151	ROHM Semiconductor
TPS63050YFFR	Texas Instruments
BU33JA2MNVX-CTL	ROHM Semiconductor

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