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GigaDevice's GD5F1GM9 Series High-Speed QSPI <span style='color:red'>NAN</span>D Flash Sets New Benchmark with Breakthrough Read Speeds for Accelerated Application Startup

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GigaDevice's GD5F1GM9 Series High-Speed QSPI NAND Flash Sets New Benchmark with Breakthrough Read Speeds for Accelerated Application Startup

　　GigaDevice, a leading semiconductor company specializing in Flash Memory, 32-bit Microcontrollers (MCUs), Sensors, Analog products and solutions, announces the launch of its GD5F1GM9 high-speed QSPI NAND Flash, which features breakthrough read speeds and innovative Bad Block Management (BBM) functionality.　　The GD5F1GM9 series combines the high-speed read performance of NOR Flash with the large capacity and cost-effectiveness of NAND Flash. These innovations address key industry challenges of slow response times and vulnerability to bad block interference associated with traditional SPI NAND Flash. The GD51GM9 launch will open new growth opportunities for SPI NAND Flash, making it the ideal choice for fast-boot applications in sectors such as security, industrial, and IoT.　　The GD5F1GM9 series high-speed QSPI NAND Flash is built on a 24nm process node. The series supports both 3V and 1.8V operating voltages as well as high-speed read modes including Continuous Read, Cache Read, and Auto Load Next Page. Continuous Read and Auto Load Next Page modes are newer read features added on this series, offering users versatile read options to further accelerate code and data fetch. These read modes utilize the new parallel computation approach for its ECC (Error Correction Code) design, replacing the previous serial computation method. This innovation significantly reduces the calculation time for the built-in ECC.　　The 3V version of the series achieves a continuous read rate of up to 83MB/s in Continuous Read mode, operating at a maximum clock frequency of 166MHz. The 1.8V version has a continuous read rate of up to 66MB/s and supports a maximum clock frequency of 133MHz. The results in GD5F1GM9’s read speeds are up to 3 times faster than traditional SPI NAND products at the same frequency. These design advantages improve data access throughput, reduce system boot time, and lower overall system power consumption.　　As bad blocks from the factory are inherent issues in NAND Flash, the GD5F1GM9 incorporates an on-chip Advanced Bad Block Management (BBM) to ensure comprehensive functionality of Continuous Read mode. Continuous Read allows read access of the full memory array with a single Read command in aid of the executed BBM that link bad block addresses to good block addresses. Read access will then automatically skip the bad block due to the established link access to the remap and linked good physical block address.　　From the factory, the GD5F1GM9 series guarantees the first 256 blocks are good blocks. While there will be bad blocks from the factory and possible new bad blocks may arise during usage that needs to be managed, the BBM feature can create a logical block address to the physical block address link, allowing users to swap and replace bad blocks and the associated access will be on a good block once the BBM link is setup.　　The device can support up to 20 Look Up Table BBM Links to further compliment Continuous Read mode functionality. This not only significantly improves resource utilization but also simplifies system design.　　“Currently, the generally slow read speed of SPI NAND Flash has become a major bottleneck in enhancing boot performance of key applications,” said Ruwei Su, GigaDevice vice president and general manager of Flash BU, "The launch of GD5F1GM9 series high-speed QSPI NAND Flash sets a new performance benchmark in the market. This series effectively addresses the read speed limitations of traditional SPI NAND Flash and offers a new solution for bad block management, making it an ideal alternative for NOR Flash users with growing capacity needs. In the future, GigaDevice will continue to refine its underlying technologies to provide customers with more efficient and reliable storage solutions."　　The GD5F1GM9 series offers 1Gb capacity with 3V/1.8V voltage options and supports WSON8 8x6mm, WSON8 6x5mm, and BGA24 (5×5 ball array) 5x5 ball package options. For detailed information and product pricing, please contact your local sales representative.　　About GigaDevice　　GigaDevice Semiconductor Inc. (SSE Stock Code 603986) is a global leading fabless supplier. The company was founded in April 2005 and headquartered in Beijing, China, with branch offices in many countries and regions worldwide, providing local support at customers' fingertips. Committed to building a complete ecosystem with four major product lines – Flash memory, MCU, sensor and analog – as the core driving force, GigaDevice can provide a wide range of solutions and services in the fields of industrial, automotive, computing, consumer electronics, IoT, mobile, networking and communications. GigaDevice has received the ISO26262:2018 automotive functional safety ASIL D certification, IEC 61508 functional safety product certification, as well as ISO9001, ISO14001, ISO45001, and Duns certifications. In a constant quest to expand our technology offering to customers, GigaDevice has also formed strategic alliances with leading foundries, assembly, and test plants to streamline supply chain management. For more details, please visit: www.gigadevice.com　　*GigaDevice and their logos are trademarks, or registered trademarks of GigaDevice Semiconductor Inc. Other names and brands are the property of their respective owners.

Key word：

GigaDevice

Release time：2025-04-23 17:09 reading：225 Continue reading>>

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Nidec Precision Develops TapSense, the World’s Thinnest Linear Resonant Actuator

　　Nidec Precision Corporation (“Nidec Precision” or the “Company”), a member of Nidec Corporation’s group companies, announced today that it has developed TapSense, the world’s thinnest linear resonant actuator*.　　Nidec Precision’s TapSense　　Nidec Precision developed TapSense, the world’s thinnest* 1.4mm-thick linear resonant actuator by utilizing its precision manufacturing technology that the Company has, since its foundation, nurtured in the camera industry – and by designing from scratch a magnetic circuit optimum for a thin actuator. TapSense realizes tablet and notebook PCs and other digital terminals that are thinner than their conventional models.　　With its excellent responsiveness and vibration force, TapSense can reproduce a crisp click feeling, while recreating a variety of tactile feedback, including the feeling of dial control. Additionally, its high responsiveness makes TapSense easier to control than conventional linear resonant actuators.　　The cumulative shipments of the Nidec Group’s vibration motors exceeded 1.5 billion units at the end of March 2024, and these motors produced by Nidec’s technologies which enable light, thin, short, and small form factors with high efficiency and ease of control are highly valued by our customers.　　As a member of the world’s leading comprehensive motor manufacturer, Nidec Precision stays committed to proposing revolutionary solutions that contribute to realizing a comfortable society.　　*Data, from Nidec Precision’s research, as of May 01, 2024

Key word：

Nidec

Release time：2024-05-10 13:11 reading：1249 Continue reading>>

Samsung cuts <span style='color:red'>NAN</span>D flash memory production

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Samsung cuts NAND flash memory production

　　According to semiconductor industry insiders, Samsung Electronics has stepped up NAND flash production cuts and has reduced NAND flash memory production by about 40%. It is expected that the production reduction will reach 50% by the end of 2023.　　According to sources, Samsung has cut NAND flash production by 20% in the first half of 2023. The 50% reduction is expected to last at least one quarter before the end of the year.　　Sources also said that the purpose of Samsung's production reduction is to accelerate the transformation of its process technology to improve its product structure.　　The price of NAND flash memory has risen as Samsung and other manufacturers have drastically cut production or reduced investment. According to the supply chain, Samsung’s 512Gb NAND flash wafer price rose to $1.60 from the previous $1.40. It is expected that the unit price of 512Gb wafers will reach $2 by the end of this year.　　Sources pointed out that as wafer costs increase, the price of flash memory devices such as consumer SSDs and enterprise solutions is rising and is expected to continue to rise before the end of the year.

Key word：

Samsung

Release time：2023-09-14 14:51 reading：3618 Continue reading>>

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AMEYA360:NanoLED Research Exploits Northern Roots

　　NS Nanotech’s recent opening of a research and development center in Montreal represents a homecoming of sorts, as the company’s technology is based on research conducted at McGill University.　　NS Nanotech Canada will take advantage of exclusive licenses to a portfolio of groundbreaking patents owned by McGill as part of its advanced research efforts to support commercialization of next-generation nanoLED technologies for televisions, mobile phones, smartwatches, augmented-reality headsets and other applications, the company said in prepared remarks.　　In an interview with EE Times, NS Nanotech CEO Seth Coe-Sullivan said the R&D center is a critical enablement of the company’s long-term mission to develop the world’s first efficient submicron-scale nanoLEDs.　　NS Nanotech, which is based in Ann Arbor, Michigan, has created samples of submicron-sized LEDs in its laboratory research that are radically smaller than any other LEDs available in the world today—these submicron nanoLEDs are much smaller than a strand of human hair, at less than one micron. By comparison, today’s “miniLEDs” are generally between 100 and 200 microns, while new “microLEDs” are smaller than 100 microns.Coe-Sullivan said McGill is a global center of excellence in nanotechnologies that will help NS Nanotech overcome the cost and performance limitations of 20th century technologies.　　The McGill University campus in Montreal (Source: Neale McDevitt/McGill University)　　“What happens to conventional technology is you make the LED smaller, and the efficiency gets smaller as well,” he said. “That’s where a nanoLED comes in.” By building the LED from the nano up, no efficiency is lost. “The efficiency versus size curve is very favorable.”　　NS Nanotech’s strategy since its founding was to be “capital light,” despite being in the capital-intensive semiconductor industry, Coe-Sullivan said. “Raising a lot of capital is great. You get to buy a lot of shiny new toys.” But as much as engineers love their toys, he added, it’s not desirable from a financial point of view. “It’s a big hole to be digging yourself.”　　By collaborating with universities like McGill and the University of Michigan, NS Nanotech can send its engineers to the necessary equipment, such as a molecular beam epitaxy (MBE) chamber, rather than making huge capital investments, Coe-Sullivan said. “We scoured the world for that.”　　The company was already a licensee of McGill IP and technology, which meant it already had a formal relationship with the university and its technology transfer office.　　Derrick Wong, COO of NS Nanotech, played a key role in the original technology transfer license. It’s fitting that he’s back in the picture at NS Nanotech after retiring from McGill, as he knows many of the people at NS Nanotech. This includes some who are repatriating back to Canada for the R&D center, such as senior research scientist David Laleyan, a McGill graduate who received his Ph.D. from the University of Michigan in 2020.　　David Laleyan, senior scientist at NS Nanotech Canada (left); Derrick Wong, COO of NS Nanotech Canada (center); and McGill University professor Songrui Zhao (right) work with nanoLED fabrication equipment at Professor Zhao’s research laboratory.　　“Although we started this officially in November, people have been working together on this project in various forms for the last nine years,” Wong said in the same interview with EE Times. “McGill University has been very supportive. It still views NS Nanotech as a McGill startup, even though it’s located in Ann Arbor. It’s very much a McGill success story.”　　Also collaborating with NS Nanotech is Songrui Zhao, assistant professor in the Department of Electrical and Computer Engineering at McGill University, whose research is contributing to solving the challenges related to nanoLEDs. Over the past few years, McGill has been working with MBE, which is a material growth technique to grow nanowires for very small-scale LEDs and lasers because nanowires provide better material quality, Zhao said in the same interview with Coe-Sullivan and Wong. “If you are using this molecular beam epitaxy technique to grow nanowires, it’s very, very unique, and there are not many players.”　　Zhao added that a chief benefit of conducting this research in a university environment is that there’s a lot of frank interaction with students to discuss many different ideas. “We are not driven by revenue,” he said. University/industrial partnerships can accelerate the technology development and facilitate international connections. “One team cannot solve all the problems.”　　While McGill can handle MBE, materials and even initial device development, Zhao said testing and scaling up requires more resources beyond the university—be it people or equipment.　　Coe-Sullivan said the immediate goal is to grow the team in Montreal to work with the research equipment available there. “At McGill, we’ve got access to great research tools, but they’re research tools. These are not places where we’re ever going to mass-produce a product or be able to truly scale a technology.”　　He said NS Nanotech is talking to foundries that have the same type of equipment, but at a much larger scale and throughput to be able to bring its product all the way to market through partnerships and contract manufacturing. “We’ve got access to foundries here in North America that can take this all the way to the end market.”　　In late April, NS Nanotech Canada announced it received matching funding support from McGill University’s Office of Innovation & Partnerships to accelerate the commercialization of its nanoLED technologies.

Key word：

LED

Release time：2023-06-09 13:16 reading：1367 Continue reading>>

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Panasonic Wins the Case Brought by Dyson Regarding Nanoe EH-NA0G Hair Dryer

　　Panasonic Corporation (Panasonic) announced today (April 27, 2023) that the Tokyo District Court (“the Court”) has rendered judgement (“the Judgement”) to dismiss all claims by Dyson KK (Dyson) relating to the June 9, 2022 case that Dyson brought against Panasonic regarding Panasonic’s EH-NA0G Hair Dryer (“the Case”).　　Dyson filed the Case, seeking an injunction against advertisement of Panasonic’s nanocare EH-NA0G Hair Dryer. Upon filing, Dyson officially stated that it was confident that hair dryer advertisements related to the effects of nanoe technology on hair were misleading to consumers, and submitted test results supporting this claim as evidence to the court.　　In today’s Judgement, the Court points out that the tests were conducted under inappropriate conditions and the results from them cannot be relied upon, and as such it could not conclude that the data proved Dyson’s claim that Panasonic’s advertisements were misleading to consumers. The Court concluded that Panasonic’s advertisements do not violate the Unfair Competition Prevention Act.　　Panasonic will continue to convey accurate information about the value of our nanocare Hair Dryer series to our customers in compliance with all relevant laws, regulations, and guidelines.

Key word：

Panasonic

Release time：2023-05-10 11:16 reading：3478 Continue reading>>

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AMEYA360:Microchip Technology EV01G21A Curiosity Nano Evaluation Kit

　　Microchip Technology EV01G21A Curiosity Nano Evaluation Kit is a hardware platform to evaluate microcontrollers (MCUs) in the PIC18F Q71 family. This board has the PIC18F56Q71 MCU mounted. Supported by MPLAB? X IDE, the board provides easy access to the features of the PIC18F56Q71 to explore how to integrate the device into a custom design. The Microchip Technology Curiosity Nano series of evaluation boards include an onboard debugger. No external tools are necessary to program and debug the PIC18F56Q71.　　FEATURES　　PIC18F56Q71 microcontroller　　One yellow user LED　　One mechanical user switch　　One 32.768kHz crystal footprint　　Onboard debugger　　Board identification in MPLAB? X IDE　　One green power and status LED　　Programming and debugging　　Virtual serial port (CDC)　　One debug GPIO channel (DGI GPIO)　　USB-powered or externally powered　　Adjustable target voltage　　MIC5353 LDO regulator controlled by the onboard debugger　　1.8-5.1V output voltage (limited by USB input voltage)　　500mA maximum output current (limited by ambient temperature and output voltage)

Key word：

AMEYA360,Microchip

Release time：2023-04-21 14:46 reading：2135 Continue reading>>

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Ameya360:AEM Strengthens Presence in Asia with New Manufacturing Facility in Penang

　　AEM has expanded its presence in Asia by opening a new manufacturing plant in Penang, Malaysia. The facility comprises a 365,000-square-foot area for assembly, quality assurance (QA), a warehouse, an R&D lab, and more, to develop advanced testing and handling equipment.　　This expansion comes on the heels of AEM’s highest recorded nine-month revenue level in history for 9M2022 at S$747 million. The new plant will also allow AEM to tap into the region’s growth opportunities and talents and bring its operations closer to existing and new customers.　　The plant was officiated by the Chief Minister of Penang, Right Honorable Chow Kon Yeow; the Deputy CEO Investment Development of MIDA, Lim Bee Vian; AEM Chief Executive Officer (CEO), Chandran Nair; and AEM’s Non-Executive Chairman, Loke Wai San. Guests included Penang State Exco Trade, Industry & Entrepreneur Development, Yang Berhormat Dato Haji Abdul Halim Bin Haji Hussain; the CEO of InvestPenang, Dato’ Loo Lee Lian; the Special Investment Advisor to the Chief Minister of Penang, Dato’ Seri Lee Kah Choon; the Deputy High Commissioner to Malaysia, Shivakumar Nair; together with other dignitaries. This momentous ceremony also included an exclusive tour of the plant. Almost 400 employees of AEM joined the celebration with the company’s leadership team.　　“AEM’s new manufacturing plant in Penang lends credence to our conduciveness as a global semiconductor hub. With half a century of industrialization in its DNA, Penang has navigated numerous up and down cycles, and has emerged stronger from each. Experiencing an upward trend in its exports, Penang contributed an average 29 percent of Malaysia’s export, and 58 percent of the nation’s trade surplus over the past five years,” said Penang Chief Minister Chow. “In terms of investments, Penang is among the top contributors to the country, garnering RM9.2 billion in approved manufacturing investments from January to September 2022. Particularly, investments from machinery and equipment industry amounted to a total of RM7.3 billion from 2020 to September 2022, represented 57 percent of the country’s total.”　　“Riding on the prolific growth of advanced technologies, I am confident that Penang will be benefitting from the semiconductor industry’s long-term outlook. The state, via InvestPenang, is looking forward to working with AEM in accelerating the region’s vibrant electrical and electronics (E&E) ecosystem development, anchoring our status as the Silicon Valley of the East,” he added.　　“AEM’s footprint in Malaysia will be a strategic advantage to Malaysia’s E&E industry, as the company can offer customized testing solutions for the electronics and semiconductor industries,” said Lim. “I am certain that this project demonstrates not only AEM’s confidence in Malaysia’s long-term investment propositions but also the thriving state of the manufacturing industry and its ecosystem in Malaysia. The project is a parallel testament of the global investors’ confidence in Malaysia as the preferred investment destination and the local companies’ capability and readiness to support high-profile business ventures and activities.”　　“We’re pleased to announce the opening of our new plant in Penang. It allows us to scale up testing and handling capabilities to meet the growing demand for new semiconductor devices. We ensure our customers’ success by continuing to grow our capabilities to deploy quickly at scale. Together with our centre of excellence in Singapore, I believe we will solidify our position as a hub in the region,” said Nair.　　Malaysia is an important market as it is strategically positioned in the heart of Southeast Asia. The E&E industry contributes significantly to Malaysia’s GDP growth, export earnings, investment and employment and plays a vital role in the country’s industrial development. From January to September 2022, Malaysia attracted a total of RM22.6 billion in approved investments for the E&E industry.　　As a hub in the semiconductor global supply chain, Penang accounts for 80 percent of the nation’s contribution to global backend semiconductor output, and over 5 percent of the world’s semiconductor sales over the last few years.

Key word：

AEM

Release time：2023-01-31 11:05 reading：1783 Continue reading>>

Samsung, Micron Battling for <span style='color:red'>NAN</span>D Supremacy

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Samsung, Micron Battling for NAND Supremacy

　　Samsung Electronics and Micron Technology continue to fight for supremacy in the NAND market, with both companies recently announcing higher-density 3D NAND solutions—albeit with different nomenclatures.　　Samsung has opted to focus on 3D NAND bit density with the introduction of its 1-terabit (Tb) triple-level–cell eighth-generation vertical NAND (V-NAND), which the company claims is the industry’s highest bit density. Meanwhile, Micron has opted to present its latest 3D NAND in term of layers, having announced its 232-layer 3D NAND mid-year in 2022.　　Samsung’s eighth-gen V-NAND　　SungHoi Hur, executive vice president of flash product and technology at Samsung, told EE Times during an interview that the company achieved high bit density through a Cell-on-Peri (COP) structure, which the company introduced with its seventh-generation V-NAND.　　With a COP structure, a cell array area is placed above the peripheral. But even with a COP structure, part of the peripheral is placed outside of the cell, Hur said, meaning the cell array must be reduced along with the peripheral area below and next to the cell array to reduce chip size.　　Samsung first introduced its vertically stacked V-NAND flash in 2013. “Since then, we have been developing disruptive technologies to reduce the area and height of cells and have accumulated a great deal of Samsung know-how,” Hur said.　　That know-how includes Samsung’s high-aspect–ratio contact etching technology, which the company uses to reduce the area of the cell array. For the eighth-generation V-NAND, Samsung successfully minimized the area of all three parts from the previous generation to enable even more density, Hur added.　　A specific challenge that Samsung aims to address is avoiding the cell-to-cell interference that normally occurs with scaling down if the mold of the cell unit gets slimmer for scaling. “To counteract that interference, we have identified possible tradeoffs in performance first; then we moved on to solving the fundamental problems,” Hur said.　　He also noted that the purpose of Samsung’s solution was to develop an optimal operation scheme for minimizing interference during writing, applying a new material to the blocking layer in the cell to prevent electrons from bouncing out of the charge trap layer (CTL) due to voltage and improving the structure of the CTL.　　Hur said reaching this milestone means overcoming a variety of hurdles. From a structural perspective, the molds could lean to one side more easily as the total stack height continues to grow. “As the cells become closer and smaller, we have to fight with decreasing cell current as well as interference among cells,” he said. Samsung is working to lower the total stack height by leveraging the support structure used in its seventh-generation V-NAND and the multi-hole technology while also exploring new solutions, including an innovative cell structure using new materials.

Key word：

Samsung

Release time：2023-01-12 10:40 reading：3533 Continue reading>>

<span style='color:red'>NAN</span>D Flash Manufacturers to Cut Capex by 2% YoY in 2019 Due to Worsening Oversupply

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NAND Flash Manufacturers to Cut Capex by 2% YoY in 2019 Due to Worsening Oversupply

Experiencing an oversupply over the entire year of 2018, the global NAND Flash market continues to face excess capacity this year as the demand outlook for notebooks, smartphones, servers and other end products remains weak, reports DRAMeXchange, a division of TrendForce. NAND Flash manufacturers have slowed down the capacity expansion by cutting capex in 2019, aiming to moderate the oversupply by limiting the bit output growth.South Korean manufacturers have taken initiatives to cut their NAND Flash capex due to the worsening oversupply in 2018, says DRAMeXchange. Even though the total capex in the whole NAND Flash industry has been cut by nearly 10%, the oversupply has continued. Looking ahead to 2019, U.S.-based manufacturers would also lower their semiconductor capex, and the total capex in the global NAND Flash industry is expected to be $22 billion, about 2% YoY lower than in 2018.Influenced by the adjustments in capacity expansion, 92/96-layer 3D NAND products would only account for about 32% of the industry’s total output by the end of 2019, while the portion of 64/72-layer products remains over 50%, although the major manufacturers have entered the mass production of 92/96-layer 3D NAND since the fourth quarter of 2018. As the manufacturers slow down capacity expansion and migration to advanced process, the bit output growth of NAND Flash is expected to be around 38% in 2019, significantly lower than over 45% in 2018.As for the capacity adjustments of manufacturers, DRAMeXchange notes that Samsung’s NAND Flash bit output growth is expected to be around 35%, considering the following two factors. First, Samsung would continue to reduce its production capacity for 2D NAND. Second, the operating capacity would also decrease compared with the end of 2018, since the 92-layer process requires more space in the fab. The slowdown in bit output growth would have great impacts on the global NAND Flash production, because Samsung's share in the NAND Flash market is about 30%.SK Hynix and Toshiba/Western Digital also have a chance to see smaller bit output growth. The two companies have respectively new M15 fab and Fab 6, but would also be affected by the production reduction plan or capacity transfer to previous-generation process. Therefore, DRAMeXchange has revised the forecast of their annual bit output growth to less than 50% and 35%, down from previous forecast of 50% and 40%, considering the weak demand outlook.Micron's new fab in Singapore will not officially enter mass production until 2020, so the company’s wafer capacity per month in 2019 will remain flat when compared to 4Q18. Intel plans to reach a full load capacity in its Dalian fab, but does not have other capacity expansion plan. The joint bit output of Micron and Intel would grow by nearly 40% in 2019, noticeably lower than 45% in 2018.In terms of the NAND Flash price trends for 2019, the quotes for various product lines would witness apparently steeper drop than DRAMeXchange’s previous forecasts, indicating the excess inventories faced by manufacturers. DRAMeXchange expects a quarterly decline of 20% in 1Q19, higher than previous forecast of 10%, and a further decline of nearly 15% QoQ in 2Q19. For 2H19, the price decline may be slightly moderated considering the coming of peak season, but prices would continue to fall by around 10% each quarter. It remains to be seen whether manufacturers are able to further limit their bit output growth. In sum, the average NAND Flash price would decrease by nearly a half in 2019, according to the calculation of DRAMeXchange.

Key word：

NAND Flash

Release time：2019-01-11 00:00 reading：1197 Continue reading>>

Contract Prices of <span style='color:red'>NAN</span>D Flash Products to Drop Further in 1H19; Price Decline Would Reach 10% in 1Q19

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Contract Prices of NAND Flash Products to Drop Further in 1H19; Price Decline Would Reach 10% in 1Q19

DRAMeXchange, a division of TrendForce, reports that the bit output from the NAND Flash industry in 2018 turned out to be higher than expected, as suppliers had steady yields of their 64-layer 3D NAND production. NAND Flash demand, however, has remained sluggish due to the looming trade war between China and the U.S., the shortage of Intel CPUs, and the lower-than-expected sales of new iPhone devices, despite the year-end busy season.Looking ahead to the first half of 2019, NAND Flash manufacturers have tried to slow down their production capacity expansion, but the seasonal headwinds and high inventory levels would only intensify oversupply concerns in the market. Contract prices of NAND Flash products in 1Q19 are expected to drop further by around 10%.DRAMeXchange points out that the eMMC/UFS sector has seen a steeper price decline in 4Q18, since Chinese smartphone manufacturers attempt to consume inventories and adjust production plans by the end of the year. The inventory consumptions are expected to continue in 1Q19, so the contract prices of eMMC/UFS products would witness further fall of nearly 10%.As for the trend in the SSD market, DRAMeXchange expects Client SSD contract prices to fall by nearly 10% in 1Q19. The global notebook shipments for 1Q19 are estimated to decrease slightly by over 15% QoQ, the bit demand for SSD will grow more sluggish and prices will grow weaker, despite the increasing SSD adoption rate in the PC market and the memory content upgrades.Enterprise SSD market has become a battleground for all manufacturers as the demand for servers keeps growing, which will make the price competition more intense in 2019. For the first quarter of next year, the Enterprise SSD contract prices would also fall by more than 10% considering the seasonal headwinds.With regard to the demand in channel market, module makers have abundant supply this year, but as the NAND Flash prices continue to fall, module makers need to clear their inventories at the end of each month to cut loss. They even have to sell defective products to keep profitability, which is rather disruptive in the market. While major NAND Flash suppliers make a good profit this year, module makers are struggling with the worsening profitability. Looking ahead, the market situation is highly likely to remain tough for module makers in 1H19.

Key word：

NAND Flash

Release time：2018-12-18 00:00 reading：1231 Continue reading>>

model	brand	Quote
MC33074DR2G	onsemi
RB751G-40T2R	ROHM Semiconductor
CDZVT2R20B	ROHM Semiconductor
BD71847AMWV-E2	ROHM Semiconductor
TL431ACLPR	Texas Instruments

model	brand	To snap up
IPZ40N04S5L4R8ATMA1	Infineon Technologies
BP3621	ROHM Semiconductor
BU33JA2MNVX-CTL	ROHM Semiconductor
ESR03EZPJ151	ROHM Semiconductor
TPS63050YFFR	Texas Instruments
STM32F429IGT6	STMicroelectronics

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